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    • 1. 发明授权
    • Method of measuring thickness of thin film using microwave
    • 使用微波测量薄膜厚度的方法
    • US07535236B2
    • 2009-05-19
    • US11994247
    • 2006-09-28
    • Sang Young LeeJae Hun LeeHyun Kyung HanSang Geun LeeByung Woo Park
    • Sang Young LeeJae Hun LeeHyun Kyung HanSang Geun LeeByung Woo Park
    • G01R27/04G01R27/32
    • G01B15/025
    • The present invention relates to a thickness measurement method for thin films using microwaves. In the method, the Q-factors of a dielectric resonator are measured. The effective surface resistance (RSeff) of a superconductor or a conductor film and the loss tangent of a dielectric are determined using the Q-factor. The penetration depth λ for the superconductor film is measured using a dielectric resonator with a small gap between the superconductor film at the top of the resonator and the rest. The intrinsic surface resistance of superconductor films for calibration is determined using the measured RSeff and λ while the intrinsic surface resistance of a conductor film for calibration is determined using the measured RSeff and the nature of the intrinsic surface resistance being equal to the intrinsic surface reactance. The thickness of a superconductor or a conductor film is measured using a relation between the RSeff and the calibrated intrinsic surface resistance for superconductor films or conductor films.
    • 本发明涉及使用微波的薄膜的厚度测量方法。 在该方法中,测量介质谐振器的Q因子。 使用Q因子确定超导体或导体膜的有效表面电阻(RSeff)和电介质的损耗角正切。 超导薄膜的穿透深度λ是使用在谐振器顶部的超导薄膜与其余部分之间具有小间隙的介质谐振器来测量的。 使用测量的RSeff和λ测定用于校准的超导体膜的固有表面电阻,而使用所测量的RSeff和本征表面电阻的性质等于固有表面电抗确定用于校准的导体膜的固有表面电阻。 使用超导体膜或导体膜的RSeff与校正的固有表面电阻之间的关系来测量超导体或导体膜的厚度。
    • 2. 发明申请
    • Method of Measuring Thickness of Thin Film Using Microwave
    • 使用微波测量薄膜厚度的方法
    • US20080205595A1
    • 2008-08-28
    • US11994247
    • 2006-09-28
    • Sang Young LeeJae Hun LeeHyun Kyung HanSang Geun LeeByung Woo Park
    • Sang Young LeeJae Hun LeeHyun Kyung HanSang Geun LeeByung Woo Park
    • G01B15/02
    • G01B15/025
    • The present invention relates to a thickness measurement method for thin films using microwaves. In the method, the Q-factors of a dielectric resonator are measured. The effective surface resistance (RSeff) of a superconductor or a conductor film and the loss tangent of a dielectric are determined using the Q-factor. The penetration depth λ for the superconductor film is measured using a dielectric resonator with a small gap between the superconductor film at the top of the resonator and the rest. The intrinsic surface resistance of superconductor films for calibration is determined using the measured RSeff and λ while the intrinsic surface resistance of a conductor film for calibration is determined using the measured RSeff and the nature of the intrinsic surface resistance being equal to the intrinsic surface reactance. The thickness of a superconductor or a conductor film is measured using a relation between the RSeff and the calibrated intrinsic surface resistance for superconductor films or conductor films.
    • 本发明涉及使用微波的薄膜的厚度测量方法。 在该方法中,测量介质谐振器的Q因子。 使用Q因子确定超导体或导体膜的有效表面电阻(R sub S eff)和电介质的损耗角正切。 超导薄膜的穿透深度λ是使用在谐振器顶部的超导薄膜与其余部分之间具有小间隙的介质谐振器来测量的。 用于校准的超导体膜的固有表面电阻是使用测量的R S S O SUP和λ确定的,而用于校准的导体膜的固有表面电阻是使用测量的R 本征表面电阻的性质等于固有表面电抗。 使用超导体膜或导体膜的校准固有表面电阻之间的关系来测量超导体或导体膜的厚度。