专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100096367A1 APPARATUS FOR GENERATING REMOTE PLASMA 有权
标题翻译：用于产生远程等离子体的装置
公开(公告)号：US20100096367A1
公开(公告)日：2010-04-22
申请号：US12547163
申请日：2009-08-25
申请人： Hyeong-Tag JEON , Sang-Hyun Woo , Hyung-Chul Kim , Chin-Wook Chung
发明人： Hyeong-Tag JEON , Sang-Hyun Woo , Hyung-Chul Kim , Chin-Wook Chung
IPC分类号： H05H1/34
CPC分类号： H01J37/32532 , H01J37/32082 , H01J37/32357
摘要： Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.
摘要翻译：提供一种用于产生远程等离子体的装置，其可以通过防止偏置电极处的电弧来提高薄膜质量。该装置包括安装在室的上部内的射频（RF）电极，与RF电极分开设置的偏置电极，并且包括多个通过等离子体通过的通孔，其中偏置功率被提供给偏置电极，形成在RF电极和偏置电极之间的等离子体产生单元，其中等离子体气体被供应到等离子体产生单元，以及接地电极，安装在偏置电极之下并与偏置电极隔开，并且包括对应于等离子体的等离子体通孔偏置电极的通孔，其中周期性地具有第一电压电平的第二电压电平的脉冲DC偏压施加到偏置电极。

2. 发明授权

US08207470B2 Apparatus for generating remote plasma 有权
标题翻译：用于产生远程等离子体的装置
公开(公告)号：US08207470B2
公开(公告)日：2012-06-26
申请号：US12547163
申请日：2009-08-25
申请人： Hyeong-Tag Jeon , Sang-Hyun Woo , Hyung-Chul Kim , Chin-Wook Chung
发明人： Hyeong-Tag Jeon , Sang-Hyun Woo , Hyung-Chul Kim , Chin-Wook Chung
IPC分类号： B23K10/00
CPC分类号： H01J37/32532 , H01J37/32082 , H01J37/32357
摘要： Provided is an apparatus for generating remote plasma, which can improve thin-film quality by preventing an arc at a bias electrode. The apparatus includes a radio frequency (RF) electrode installed inside an upper portion of a chamber, a bias electrode installed apart from the RF electrode, and including a plurality of through holes through which plasma passes, wherein a bias power is supplied to the bias electrode, a plasma generating unit formed between the RF electrode and the bias electrode, wherein a plasma gas is supplied to the plasma generating unit, and a ground electrode installed under and spaced apart from the bias electrode, and including plasma through holes corresponding to the through holes of the bias electrode, wherein a pulsed DC bias of a second voltage level, which has a first voltage level periodically, is applied to the bias electrode.
摘要翻译：提供一种用于产生远程等离子体的装置，其可以通过防止偏置电极处的电弧来提高薄膜质量。该装置包括安装在室的上部内的射频（RF）电极，与RF电极分开安装的偏置电极，并且包括多个通过等离子体通过的通孔，其中偏置功率被提供给偏置电极，形成在RF电极和偏置电极之间的等离子体产生单元，其中等离子体气体被供应到等离子体产生单元，以及接地电极，安装在偏置电极之下并与偏置电极隔开，并且包括对应于等离子体的等离子体通孔偏置电极的通孔，其中周期性地具有第一电压电平的第二电压电平的脉冲DC偏压施加到偏置电极。

3. 发明申请

US20090017619A1 METHOD FOR MANUFACTURING METAL SILICIDE LAYER IN A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：在半导体器件中制造金属硅化物层的方法
公开(公告)号：US20090017619A1
公开(公告)日：2009-01-15
申请号：US12169790
申请日：2008-07-09
申请人： Young Jin LEE , Baek Mann KIM , Soo Hyun KIM , Dong Ha JUNG , Jeong Tae KIM , Hyeong Tag JEON , Keun Woo LEE , Keun Jun KIM , Tae Yong PARK
发明人： Young Jin LEE , Baek Mann KIM , Soo Hyun KIM , Dong Ha JUNG , Jeong Tae KIM , Hyeong Tag JEON , Keun Woo LEE , Keun Jun KIM , Tae Yong PARK
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/28556 , H01L21/76843 , H01L21/76855
摘要： A metal suicide layer is fabricated in a semiconductor device. A first metal layer is deposited on a silicon substrate formed with an S interlayer dielectric having a contact hole through PVD. A second metal layer is deposited on the first metal layer through any one of CVD and ALD. Annealing is performed on the silicon substrate which is formed with the first and second metal layers to form the metal silicide. The portions of the second metal layer and the first metal layer which have not reacted during annealing are removed.
摘要翻译：在半导体器件中制造金属硅化物层。第一金属层沉积在由具有通过PVD的接触孔的S层间电介质形成的硅衬底上。通过CVD和ALD中的任一种将第二金属层沉积在第一金属层上。在由第一和第二金属层形成的硅衬底上进行退火以形成金属硅化物。去除在退火过程中没有反应的第二金属层和第一金属层的部分。

4. 发明申请

US20090011150A1 Remote Plasma Atomic Layer Deposition Apparatus and Method Using Dc Bias 审中-公开
标题翻译：远程等离子体原子层沉积设备和使用Dc偏压的方法
公开(公告)号：US20090011150A1
公开(公告)日：2009-01-08
申请号：US11658961
申请日：2004-08-04
申请人： Hyeong-Tag Jeon , Un-Jung Kim , Ju-Youn Kim , Jin-Woo Kim
发明人： Hyeong-Tag Jeon , Un-Jung Kim , Ju-Youn Kim , Jin-Woo Kim
IPC分类号： B01J19/08 , C23C16/54
CPC分类号： C23C16/45542 , C23C16/452 , C23C16/45525 , C23C16/45544 , C23C16/45565 , C23C16/45574 , C30B25/105 , H01J37/32082 , H01J37/32357 , H01J37/3244 , H05H3/02
摘要： A conventional plasma applied ALD apparatus has a problem in that physical shock is directly imposed on a substrate and a thin film thereby damaging the thin film. Further, many reports have said that since an apparatus for controlling plasma energy is not arranged well, the thin film is not formed uniformly due to plasma nonuniformity. Therefore, there is provided a remote plasma atomic layer deposition apparatus using a DC bias comprising: a reaction chamber having an inner space; a substrate supporting body on which a substrate on which a thin film is to be formed is loaded arranged at one side of the inner space of the reaction chamber; a remote plasma generating unit arranged outside of the reaction chamber to supply a remote plasma into the inner space of the reaction chamber; a DC bias unit controlling energy of the remote plasma; and a source gas supply unit supplying a source gas for forming the thin film into the reaction chamber.
摘要翻译：常规的等离子体涂覆的ALD装置具有直接施加在基板和薄膜上的物理冲击从而损坏薄膜的问题。此外，许多报道说，由于用于控制等离子体能量的装置不能很好地布置，所以由于等离子体不均匀性而不能均匀地形成薄膜。因此，提供了使用DC偏压的远程等离子体原子层沉积装置，包括：具有内部空间的反应室; 在反应室的内部空间的一侧设置有基板支撑体，在基板支撑体上形成有要形成薄膜的基板，远程等离子体生成单元，其布置在反应室的外部，以将远程等离子体供应到反应室的内部空间中; DC偏压单元，控制远程等离子体的能量; 以及源气体供给单元，其将用于将薄膜形成的源气体供给到反应室中。

5. 发明授权

US07420217B2 Thin film LED 有权
标题翻译：薄膜LED
公开(公告)号：US07420217B2
公开(公告)日：2008-09-02
申请号：US10795287
申请日：2004-03-09
申请人： Hyeong Tag Jeon
发明人： Hyeong Tag Jeon
IPC分类号： H01L29/20 , H01J1/62
CPC分类号： H01L33/508 , H01L33/44 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/4918 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a tinted thin film layer over the LED chip that changes the color of the emitted light. For example, a blue-light emitting LED chip can be used to produce white light. The tinted thin film layer beneficially consists of ZnSe, CeO2, Al2O3, or Y2O3:Ce that is deposited using a chemical vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), atomic layer chemical vapor deposition (ALD), plasma enhanced MOCVD, plasma enhanced ALD, and/or photo enhanced CVD. Suitable CVD precursors include Alkoxide, β-dikeonate, Metalloscene, Alkys, DMZn, DEZe, H2Se, DMSe, TbuSe, and DESe.
摘要翻译：由发射第一波长的光的LED芯片组成的发光LED器件以及改变发光的颜色的LED芯片上的有色薄膜层。例如，可以使用蓝色发光LED芯片来产生白光。着色的薄膜层有利地由ZnSe，CeO 2，Al 2 O 3 O 3或Y 2 O 2组成例如金属有机化学气相沉积（MOCVD），原子层化学气相沉积（ALD），等离子体增强MOCVD，等离子体增强型ALD和/ 或光增强CVD。合适的CVD前体包括烷氧化物，β-二酮酸盐，金属荧光体，Alkys，DMZn，DEZe，H 2 Se，DMSe，TbuSe和DES。

6. 发明授权

US07414271B2 Thin film led 有权
标题翻译：薄膜led
公开(公告)号：US07414271B2
公开(公告)日：2008-08-19
申请号：US11544645
申请日：2006-10-10
申请人： Hyeong Tag Jeon
发明人： Hyeong Tag Jeon
IPC分类号： H01L29/20 , H01J1/62 , H01J63/04
CPC分类号： H01L33/508 , H01L33/44 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/4918 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A method of fabricating a light emitting diode (LED) includes providing an LED chip that emits light having a first wavelength where the LED chip includes a first electrical contact and a second electrical contact. The method further includes forming a tinted thin film layer over the LED chip where the tinted thin film layer interacts with the first wavelength light to produce a light having a second wavelength.
摘要翻译：一种制造发光二极管（LED）的方法包括提供发射具有第一波长的光的LED芯片，其中LED芯片包括第一电触点和第二电触头。该方法还包括在LED芯片上形成有色薄膜层，其中有色薄膜层与第一波长光相互作用以产生具有第二波长的光。

7. 发明申请

US20070193515A1 Apparatus for generating remote plasma 审中-公开
标题翻译：用于产生远程等离子体的装置
公开(公告)号：US20070193515A1
公开(公告)日：2007-08-23
申请号：US11703621
申请日：2007-02-07
申请人： Hyeong-Tag Jeon , In-Hoe Kim , Seok-Hoon Kim , Chin-Wook Chung , Sahng-Kyoo Lee
发明人： Hyeong-Tag Jeon , In-Hoe Kim , Seok-Hoon Kim , Chin-Wook Chung , Sahng-Kyoo Lee
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H05H1/46 , H01J37/3211 , H01J37/32357 , H01J37/3244
摘要： Provided is an apparatus for generating remote plasma. The apparatus includes an RF antenna disposed in regard to a chamber, a plasma generating unit formed in an uppermost portion of the chamber, wherein a plurality of plasma generation gas introduction pipes are communicated with the plasma generating unit, a first shower head disposed below the plasma generating unit, and having a plurality of first plasma guide holes, a second shower head disposed below the first shower head, and having a plurality of source/purge gas guide holes and a plurality of second plasma guide holes directly connected to the respective first plasma guide holes, and a source/purge gas introduction unit disposed between the first and second shower heads, wherein a plurality of source/purge gas introduction pipes are uniformly communicated with the source/purge gas introduction unit.
摘要翻译：提供了一种用于产生远程等离子体的装置。该装置包括：关于腔室设置的RF天线，形成在腔室的最上部的等离子体产生单元，其中多个等离子体产生气体导入管与等离子体产生单元连通;第一淋浴喷头，等离子体发生单元，并具有多个第一等离子体引导孔，设置在第一喷淋头下方的第二喷淋头，并且具有多个源/吹扫气体引导孔和多个第二等离子体引导孔，其直接连接到相应的第一等离子体引导孔等离子体引导孔和设置在第一和第二喷淋头之间的源/净化气体引入单元，其中多个源/净化气体引入管与源/净化气体导入单元均匀地连通。

8. 发明授权

US06744196B1 Thin film LED 有权
标题翻译：薄膜LED
公开(公告)号：US06744196B1
公开(公告)日：2004-06-01
申请号：US10316004
申请日：2002-12-11
申请人： Hyeong Tag Jeon
发明人： Hyeong Tag Jeon
IPC分类号： H01J162
CPC分类号： H01L33/508 , H01L33/44 , H01L33/507 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2224/49107 , H01L2224/4918 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Light emitting LEDs devices comprised of LED chips that emit light at a first wavelength, and a tinted thin film layer over the LED chip that changes the color of the emitted light. For example, a blue-light emitting LED chip can be used to produce white light. The tinted thin film layer beneficially consists of ZnSe, CeO2, Al2O3, or Y2O3:Ce that is deposited using a chemical vapor deposition process, such as metal organic chemical vapor deposition (MOCVD), atomic layer chemical vapor deposition (ALD), plasma enhanced MOCVD, plasma enhanced ALD, and/or photo enhanced CVD. Suitable CVD precursors include Alkoxide, &bgr;-dikeonate, Metalloscene, Alkys, DMZn, DEZe, H2Se, DMSe, TbuSe, and DESe.
摘要翻译：由发射第一波长的光的LED芯片组成的发光LED器件以及改变发光的颜色的LED芯片上的有色薄膜层。例如，可以使用蓝色发光LED芯片来产生白光。有色薄膜层有利地由使用化学气相沉积工艺（如金属有机化学气相沉积（MOCVD）），原子层化学气相沉积（ALD），等离子体增强等离子体沉积的ZnSe，CeO2，Al2O3或Y2O3：Ce沉积 MOCVD，等离子体增强ALD和/或光增强CVD。合适的CVD前体包括烷氧化物，β-二酮酸盐，金属荧光体，Alkys，DMZn，DEZe，H2Se，DMSe，TbuSe和DES。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式