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1. 发明申请

US20120152896A1 HIGH DENSITY PLASMA ETCHBACK PROCESS FOR ADVANCED METALLIZATION APPLICATIONS 有权
标题翻译：用于高级金属化应用的高密度等离子体蚀刻过程
公开(公告)号：US20120152896A1
公开(公告)日：2012-06-21
申请号：US12974630
申请日：2010-12-21
申请人： Chunming Zhou , Liqi Wu , Karthik Colinjivadi , Emery Kuo , Huatan Qiu , KieJin Park
发明人： Chunming Zhou , Liqi Wu , Karthik Colinjivadi , Emery Kuo , Huatan Qiu , KieJin Park
IPC分类号： C23F1/04 , C23F1/08 , C23F1/00
CPC分类号： C23C14/35 , C23C14/345 , C23C14/5826 , C23C14/5873 , H01J37/3402 , H01J37/3452 , H01J37/3458 , H01L21/2855 , H01L21/32136 , H01L21/76843 , H01L21/76873
摘要： A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.
摘要翻译：物理气相沉积（PVD）系统和方法包括包括靶的腔室和支撑衬底的基座。目标偏置装置在蚀刻基板期间向目标提供DC电力。直流功率大于或等于8 kW。包括电磁线圈和/或永磁体的磁场产生装置在蚀刻基板期间在PVD系统的腔室中产生磁场。射频（RF）偏置装置在蚀刻基板期间向基座提供RF偏压。 RF偏压在预定频率下小于或等于120V。目标中产生的磁场在目标内部至少为100高斯。

2. 发明授权

US08110068B2 Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes 有权
标题翻译：气体流量分配容器，等离子体发生器系统和用于执行等离子体剥离工艺的方法
公开(公告)号：US08110068B2
公开(公告)日：2012-02-07
申请号：US12052401
申请日：2008-03-20
申请人： Huatan Qiu , Woody Chung , Anirban Guha , David Cheung
发明人： Huatan Qiu , Woody Chung , Anirban Guha , David Cheung
IPC分类号： H01L21/3065 , C23C16/00 , C23C16/455
CPC分类号： H01J37/3244 , C23C16/45519 , H01J37/32449 , H01L21/31138
摘要： Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.
摘要翻译：提供了用于等离子体剥离的系统，系统组件和方法。在一个实施例中，气流分配容座可以具有圆形部分，该圆形部分包括限定接收腔的内表面，形成封闭端的外表面和外表面上的中心点，其具有延伸穿过其中的纵向轴线并且通过接收腔。第一和第二开口环提供与等离子体室的流动连通。所述第二开口环设置在所述第一环和所述中心点之间，并且所述第二开口环的每个开口在所述内表面和所述外表面之间以相对于所述纵向轴线的第二角度延伸，所述纵向轴线小于所述第一角度并具有直径基本上与相邻开口的直径相同，并且小于第一开口环的开口的直径。

3. 发明申请

US20140127912A1 PLASMA PROCESS ETCH-TO-DEPOSITION RATIO MODULATION VIA GROUND SURFACE DESIGN 审中-公开
标题翻译：等离子体处理通过地面设计进行蚀刻沉积比例调整
公开(公告)号：US20140127912A1
公开(公告)日：2014-05-08
申请号：US13672552
申请日：2012-11-08
申请人： Liqi Wu , Ishtak Karim , Huatan Qiu
发明人： Liqi Wu , Ishtak Karim , Huatan Qiu
IPC分类号： H01L21/02
CPC分类号： H01J37/32697 , C23C14/18 , C23C14/35 , H01J37/32623 , H01J37/32651 , H01L21/2855 , H01L21/76877
摘要： Plasma deposition in which properties of a discharge plasma are controlled by modifying the grounding path of the plasma is potentially applicable in any plasma deposition environment, but finds particular use in ionized physical vapor deposition (iPVD) gapfill applications. Plasma flux ion energy and E/D ratio can be controlled by modifying the grounding path (grounding surface's location, shape and/or area). Control of plasma properties in this way can reduce or eliminate reliance on conventional costly and complicated RF systems for plasma control. For a high density plasma source, the ionization fraction and ion energy can be high enough that self-sputtering may occur even without any RF bias. And unlike RF induced sputtering, self-sputtering has narrow ion energy distribution, which provides better process controllability and larger process window for integration.
摘要翻译：通过改变等离子体的接地路径来控制放电等离子体的性质的等离子体沉积可能适用于任何等离子体沉积环境，但是在电离物理气相沉积（iPVD）间隙填充应用中具有特别的用途。可以通过修改接地路径（接地面的位置，形状和/或面积）来控制等离子体通量离子能量和E / D比。以这种方式控制等离子体特性可以减少或消除对常规昂贵且复杂的射频系统对等离子体控制的依赖。对于高密度等离子体源，电离分数和离子能量可以足够高，即使没有任何RF偏压也可能发生自溅射。与RF感应溅射不同，自溅射具有较窄的离子能量分布，为整合提供更好的工艺可控性和更大的工艺窗口。

4. 发明申请

US20120070589A1 CREATION OF MAGNETIC FIELD (VECTOR POTENTIAL) WELL FOR IMPROVED PLASMA DEPOSITION AND RESPUTTERING UNIFORMITY 审中-公开
标题翻译：用于改进等离子体沉积和调整均匀性的磁场（矢量电位）井的创建
公开(公告)号：US20120070589A1
公开(公告)日：2012-03-22
申请号：US13224077
申请日：2011-09-01
申请人： Liqi Wu , Ishtak Karim , Huatan Qiu , Kie-Jin Park , Chunming Zhou , Karthik Colinjivadi
发明人： Liqi Wu , Ishtak Karim , Huatan Qiu , Kie-Jin Park , Chunming Zhou , Karthik Colinjivadi
IPC分类号： C23C14/14 , C23C14/48
CPC分类号： C23C14/351 , C23C14/0641 , C23C14/3407 , H01J37/3402 , H01J37/345 , H01J37/3458
摘要： A physical vapor deposition (PVD) system includes a chamber and a target arranged in a target region of the chamber. A pedestal has a surface for supporting a substrate and is arranged in a substrate region of the chamber. A transfer region is located between the target region and the substrate region. N coaxial coils are arranged in a first plane parallel to the surface of the pedestal and below the pedestal. M coaxial coils are arranged adjacent to the pedestal. N currents flow in a first direction in the N coaxial coils, respectively, and M currents flow in a second direction in the M coaxial coils that is opposite to the first direction, respectively.
摘要翻译：物理气相沉积（PVD）系统包括设置在室的目标区域中的室和靶。基座具有用于支撑基板的表面，并且布置在室的基板区域中。传输区域位于目标区域和衬底区域之间。 N个同轴线圈布置在平行于基座的表面并在基座下方的第一平面中。 M个同轴线圈被布置成与基座相邻。 N个电流分别在N个同轴线圈中沿第一方向流动，并且M个电流分别在与第一方向相反的M个同轴线圈中沿第二方向流动。

5. 发明授权

US09209000B2 Gas flow distribution receptacles, plasma generator systems, and methods for performing plasma stripping processes 有权
标题翻译：气体流量分配容器，等离子体发生器系统和用于执行等离子体剥离工艺的方法
公开(公告)号：US09209000B2
公开(公告)日：2015-12-08
申请号：US13342757
申请日：2012-01-03
申请人： Huatan Qiu , Woody Chung , Anirban Guha , David Cheung
发明人： Huatan Qiu , Woody Chung , Anirban Guha , David Cheung
IPC分类号： H01J37/32 , C23C16/455 , H01L21/311
CPC分类号： H01J37/3244 , C23C16/45519 , H01J37/32449 , H01L21/31138
摘要： Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.
摘要翻译：提供了用于等离子体剥离的系统，系统组件和方法。在一个实施例中，气流分配容座可以具有圆形部分，该圆形部分包括限定接收腔的内表面，形成封闭端的外表面和外表面上的中心点，其具有延伸穿过其中的纵向轴线并且通过接收腔。第一和第二开口环提供与等离子体室的流动连通。所述第二开口环设置在所述第一环和所述中心点之间，并且所述第二开口环的每个开口在所述内表面和所述外表面之间以相对于所述纵向轴线的第二角度延伸，所述纵向轴线小于所述第一角度并具有直径基本上与相邻开口的直径相同，并且小于第一开口环的开口的直径。

6. 发明申请

US20090236313A1 GAS FLOW DISTRIBUTION RECEPTACLES, PLASMA GENERATOR SYSTEMS, AND METHODS FOR PERFORMING PLASMA STRIPPING PROCESSES 有权
标题翻译：气体流量分配装置，等离子体发生器系统和执行等离子体剥离方法的方法
公开(公告)号：US20090236313A1
公开(公告)日：2009-09-24
申请号：US12052401
申请日：2008-03-20
申请人： Huatan QIU , Woody CHUNG , Anirban GUHA , David CHEUNG
发明人： Huatan QIU , Woody CHUNG , Anirban GUHA , David CHEUNG
IPC分类号： H01L21/306 , C23F1/02
CPC分类号： H01J37/3244 , C23C16/45519 , H01J37/32449 , H01L21/31138
摘要： Systems, system components, and methods for plasma stripping are provided. In an embodiment, a gas flow distribution receptacle may have a rounded section that includes an inner surface defining a reception cavity, an outer surface forming an enclosed end, and a centerpoint on the outer surface having a longitudinal axis extending therethrough and through the reception cavity. First and second rings of openings provide flow communication with the plasma chamber. The second ring of openings are disposed between the first ring and the centerpoint, and each opening of the second ring of openings extends between the inner and outer surfaces at a second angle relative to the longitudinal axis that is less than the first angle and has a diameter that is substantially identical to a diameter of an adjacent opening and smaller than the diameters of an opening of the first ring of openings.
摘要翻译：提供了用于等离子体剥离的系统，系统组件和方法。在一个实施例中，气流分配容座可以具有圆形部分，该圆形部分包括限定接收腔的内表面，形成封闭端的外表面和外表面上的中心点，其具有延伸穿过其中的纵向轴线并且通过接收腔。第一和第二开口环提供与等离子体室的流动连通。所述第二开口环设置在所述第一环和所述中心点之间，并且所述第二开口环的每个开口在所述内表面和所述外表面之间以相对于所述纵向轴线的第二角度延伸，所述纵向轴线小于所述第一角度并具有直径基本上与相邻开口的直径相同，并且小于第一开口环的开口的直径。

7. 发明授权

US08273259B1 Ashing method 有权
标题翻译：灰化方法
公开(公告)号：US08273259B1
公开(公告)日：2012-09-25
申请号：US12321227
申请日：2009-01-17
申请人： Huatan Qiu , David Wingto Cheung
发明人： Huatan Qiu , David Wingto Cheung
IPC分类号： G01L21/30
CPC分类号： H01L21/31138
摘要： Ashing of organic material is conducted initially at a low temperature and then at a high temperature. A low flow rate of ashing gas maximizes ashing rate at the low temperature, and a high flow rate of ashing gas maximizes ashing rate at a high temperature. Preferably, a crossover temperature of a particular organic material in a given ashing system is determined, the crossover temperature characterized in that below the crossover temperature, a decrease in ashing gas flow rate results in an increase of ashing rate, and above the crossover temperature, an increase in ashing gas flow rate results in an increase of ashing rate.
摘要翻译：有机材料的灰化最初在低温下然后在高温下进行。灰化气体的低流量使得低温下的灰化速度最大化，灰化气体的高流量使高温下的灰化速度最大化。优选地，确定给定灰化系统中特定有机材料的交叉温度，所述交叉温度的特征在于低于交叉温度，灰化气体流速的降低导致灰化速率的增加，并且高于交叉温度，灰化气体流量的增加导致灰化率的增加。

8. 发明申请

US20090250334A1 PLASMA GENERATOR SYSTEMS AND METHODS OF FORMING PLASMA 有权
标题翻译：等离子体发生器系统和形成等离子体的方法
公开(公告)号：US20090250334A1
公开(公告)日：2009-10-08
申请号：US12062052
申请日：2008-04-03
申请人： Huatan Qiu , David Cheung , Prashanth Kothnur
发明人： Huatan Qiu , David Cheung , Prashanth Kothnur
IPC分类号： H01L21/306 , C23C16/452 , H05H1/46
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32119 , H01J37/32174 , H01J37/3244
摘要： Systems and methods of forming plasma are provided. In an embodiment, a plasma generator system is provided including a container, a single coil disposed around the container, the single coil being a single member and having a first end, a second end, a first winding, and a second winding, wherein the first winding extends from the first end, and the second winding is integrally formed as part of the first winding and extends to the second end, an energy source electrically coupled directly to the first end of the single member, and a capacitor electrically coupled directly to the second end of the single member.
摘要翻译：提供了形成等离子体的系统和方法。在一个实施例中，提供了一种等离子体发生器系统，其包括容器，围绕容器设置的单个线圈，该单个线圈是单个构件并且具有第一端，第二端，第一绕组和第二绕组，其中，第一绕组从第一端延伸，并且第二绕组一体地形成为第一绕组的一部分并且延伸到第二端，直接电耦合到单个构件的第一端的能量源，以及直接耦合到单一成员的第二端。

9. 发明授权

US07528386B2 Submicron particle removal 有权
标题翻译：亚微米颗粒去除
公开(公告)号：US07528386B2
公开(公告)日：2009-05-05
申请号：US11293903
申请日：2005-12-05
申请人： David N. Ruzic , Brian E. Jurczyk , Darren Alman , Martin J. Neumann , Huatan Qiu
发明人： David N. Ruzic , Brian E. Jurczyk , Darren Alman , Martin J. Neumann , Huatan Qiu
IPC分类号： G21G5/00
CPC分类号： H01L21/67069 , B08B6/00 , B08B7/00 , B82Y10/00 , B82Y40/00 , C11D11/0047 , G03F1/82 , G03F7/0002 , G03F7/70925 , H01J2237/022 , H01L21/02046
摘要： A system for non-contact cleaning of particulate contamination of surfaces includes one or more sources that create a charge imbalance between a surface and particles that contaminate the surface, and a power supply that creates a pulsed electrical bias on the surface. This imbalance produces an electrostatic force that propels the particles off the surface. The cleaning process can be associated, for example, with microelectronic lithography and manufacturing.
摘要翻译：用于非接触清洁表面颗粒污染的系统包括在表面和污染表面的颗粒之间产生电荷不平衡的一个或多个源，以及在表面上产生脉冲电偏压的电源。这种不平衡产生了将颗粒推离表面的静电力。清洁过程可以例如与微电子光刻和制造相关联。

10. 发明申请

US20060237667A1 Submicron particle removal 有权
公开(公告)号：US20060237667A1
公开(公告)日：2006-10-26
申请号：US11293903
申请日：2005-12-05
申请人： David Ruzic , Brian Jurczyk , Darren Alman , Martin Neumann , Huatan Qiu
发明人： David Ruzic , Brian Jurczyk , Darren Alman , Martin Neumann , Huatan Qiu
IPC分类号： G21G5/00 , A61N5/00
CPC分类号： H01L21/67069 , B08B6/00 , B08B7/00 , B82Y10/00 , B82Y40/00 , C11D11/0047 , G03F1/82 , G03F7/0002 , G03F7/70925 , H01J2237/022 , H01L21/02046
摘要： A system for non-contact cleaning of particulate contamination of surfaces includes one or more sources that create a charge imbalance between a surface and particles that contaminate the surface, and a power supply that creates a pulsed electrical bias on the surface. This imbalance produces an electrostatic force that propels the particles off the surface. The cleaning process can be associated, for example, with microelectronic lithography and manufacturing.

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