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1. 发明授权

US08357593B2 Methods of removing water from semiconductor substrates and methods of depositing atomic layers using the same 有权
标题翻译：从半导体衬底去除水的方法和使用其沉积原子层的方法
公开(公告)号：US08357593B2
公开(公告)日：2013-01-22
申请号：US12688044
申请日：2010-01-15
申请人： Ki-chul Kim , Youn-soo Kim , Ki-vin Im , Cha-young Yoo , Jong-cheol Lee , Ki-yeon Park , Hoon-sang Choi , Se-hoon Oh
发明人： Ki-chul Kim , Youn-soo Kim , Ki-vin Im , Cha-young Yoo , Jong-cheol Lee , Ki-yeon Park , Hoon-sang Choi , Se-hoon Oh
IPC分类号： H01L21/322
CPC分类号： H01L21/314 , H01L21/02041 , H01L21/67034
摘要： Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.
摘要翻译：提供了除去吸附或结合到半导体衬底的表面的水的方法，以及使用本文所述除去水的方法沉积原子层的方法。除去水的方法包括向半导体衬底的表面施加化学溶剂，并从半导体衬底的表面除去化学溶剂。

2. 发明授权

US08339765B2 Capacitor 有权
标题翻译：电容器
公开(公告)号：US08339765B2
公开(公告)日：2012-12-25
申请号：US12628598
申请日：2009-12-01
申请人： Hoon-Sang Choi , Ki-Vin Im , Se-Hoon Oh , Sang-Yeol Kang , Cha-Young Yoo
发明人： Hoon-Sang Choi , Ki-Vin Im , Se-Hoon Oh , Sang-Yeol Kang , Cha-Young Yoo
IPC分类号： H01G4/30
CPC分类号： H01G4/33 , H01G4/01 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer.
摘要翻译：电容器包括基板，多个第一存储电极，多个第二存储电极，第一支撑层图案，电介质层和平板电极。在基板上形成多个接触焊盘。第一存储电极沿着与第一方向平行的线分别布置并且电连接到接触垫。第二存储电极分别堆叠在第一存储电极上。第一支撑层图案在与相邻的第二存储电极之间的第一方向平行的方向上延伸，并与相邻的第二存储电极接触以支撑第二存储电极。介电层形成在第一和第二存储电极上。在电介质层上形成平板电极。

3. 发明申请

US20100255651A1 SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD 有权
标题翻译：包含多层电介质膜的半导体器件及相关方法
公开(公告)号：US20100255651A1
公开(公告)日：2010-10-07
申请号：US12635013
申请日：2009-12-10
申请人： Sang-yeol KANG , Jong-cheol LEE , Ki-vin LIM , Hoon-sang CHOI , Eun-ae CHUNG
发明人： Sang-yeol KANG , Jong-cheol LEE , Ki-vin LIM , Hoon-sang CHOI , Eun-ae CHUNG
IPC分类号： H01L21/02 , H01L21/31
CPC分类号： H01L28/40 , H01L27/10852
摘要： A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
摘要翻译：公开了一种包括多层介质膜的半导体器件和用于制造半导体器件的方法。所述多层电介质膜包括具有四方晶系结构的一型电介质膜，其中，所述一型电介质膜包含第一物质。所述多层绝缘膜还包括也具有四方晶系结构的二型电介质膜，其中所述二型电介质膜包括与所述第一物质不同的第二物质，并且所述二型电介质膜的介电常数大于介电常数介电常数为1。

4. 发明申请

US20100190320A1 METHODS OF REMOVING WATER FROM SEMICONDUCTOR SUBSTRATES AND METHODS OF DEPOSITING ATOMIC LAYERS USING THE SAME 有权
标题翻译：从半导体基板去除水的方法及使用其沉积原子层的方法
公开(公告)号：US20100190320A1
公开(公告)日：2010-07-29
申请号：US12688044
申请日：2010-01-15
申请人： Ki-chul Kim , Youn-soo Kim , Ki-vin Im , Cha-young Yoo , Jong-cheol Lee , Ki-yeon Park , Hoon-sang Choi , Se-hoon Oh
发明人： Ki-chul Kim , Youn-soo Kim , Ki-vin Im , Cha-young Yoo , Jong-cheol Lee , Ki-yeon Park , Hoon-sang Choi , Se-hoon Oh
IPC分类号： H01L21/30 , B08B3/00
CPC分类号： H01L21/314 , H01L21/02041 , H01L21/67034
摘要： Provided are methods of removing water adsorbed or bonded to a surface of a semiconductor substrate, and methods of depositing an atomic layer using the method of removing water described herein. The method of removing water includes applying a chemical solvent to the surface of a semiconductor substrate, and removing the chemical solvent from the surface of the semiconductor substrate.
摘要翻译：提供了除去吸附或结合到半导体衬底的表面的水的方法，以及使用本文所述除去水的方法沉积原子层的方法。除去水的方法包括向半导体衬底的表面施加化学溶剂，并从半导体衬底的表面除去化学溶剂。

5. 发明申请

US20090014777A1 Flash Memory Devices and Methods of Manufacturing the Same 审中-公开
标题翻译：闪存设备及其制造方法
公开(公告)号：US20090014777A1
公开(公告)日：2009-01-15
申请号：US12143951
申请日：2008-06-23
申请人： Chun-Hyung Chung , Seung-Hwan Lee , Bong-Jin Kuh , Sun-Jung Kim , Hoon-Sang Choi , Sang-Wook Lim , Young-Sun Kim
发明人： Chun-Hyung Chung , Seung-Hwan Lee , Bong-Jin Kuh , Sun-Jung Kim , Hoon-Sang Choi , Sang-Wook Lim , Young-Sun Kim
IPC分类号： H01L29/00 , H01L21/3205
CPC分类号： H01L29/792 , H01L27/11521 , H01L29/40114 , H01L29/40117 , H01L29/513
摘要： Provided are flash memory devices. Embodiments of such devices may include a tunnel insulator formed on a substrate, a charge-storage layer formed on the tunnel insulator, a lower buffer layer formed on the charge-storage layer, a blocking layer formed on the lower buffer layer, and a first gate electrode formed on the blocking layer. Such devices may include second gate electrode formed on the first gate electrode, such that the lower buffer layer includes a silicon-free insulator, the blocking layer includes oxides or ternary lanthanum compounds, andthe oxides or ternary lanthanum compounds include lanthanide elements.
摘要翻译：提供的是闪存设备。这样的装置的实施例可以包括形成在基板上的隧道绝缘体，形成在隧道绝缘体上的电荷存储层，形成在电荷存储层上的下缓冲层，形成在下缓冲层上的阻挡层，以及第一栅电极形成在阻挡层上。这样的器件可以包括形成在第一栅电极上的第二栅电极，使得下缓冲层包括无硅绝缘体，阻挡层包括氧化物或三元镧化合物，氧化物或三元镧化合物包括镧系元素。

6. 发明申请

US20080203529A1 SEMICONDUCTOR DEVICE COMPRISING MULTILAYER DIELECTRIC FILM AND RELATED METHOD 审中-公开
标题翻译：包含多层电介质膜的半导体器件及相关方法
公开(公告)号：US20080203529A1
公开(公告)日：2008-08-28
申请号：US12034868
申请日：2008-02-21
申请人： Sang-yeol Kang , Jong-cheol Lee , Ki-vin Lim , Hoon-sang Choi , Eun-ae Chung
发明人： Sang-yeol Kang , Jong-cheol Lee , Ki-vin Lim , Hoon-sang Choi , Eun-ae Chung
IPC分类号： H01L29/92 , H01L21/02
CPC分类号： H01L28/40 , H01L27/10852
摘要： A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.
摘要翻译：公开了一种包括多层介质膜的半导体器件和用于制造半导体器件的方法。所述多层电介质膜包括具有四方晶系结构的一型电介质膜，其中，所述一型电介质膜包含第一物质。所述多层绝缘膜还包括也具有四方晶系结构的二型电介质膜，其中所述二型电介质膜包括与所述第一物质不同的第二物质，并且所述二型电介质膜的介电常数大于介电常数介电常数为1。

7. 发明申请

US20080122044A1 METHOD MANUFACTURING CAPACITOR DIELECTRIC 失效
标题翻译：方法制造电容器电介质
公开(公告)号：US20080122044A1
公开(公告)日：2008-05-29
申请号：US11865869
申请日：2007-10-02
申请人： Sang-yeol KANG , Jong-cheol LEE , Ki-vin IM , Jae-hyun YEO , Hoon-sang CHOI , Eun-ae CHUNG
发明人： Sang-yeol KANG , Jong-cheol LEE , Ki-vin IM , Jae-hyun YEO , Hoon-sang CHOI , Eun-ae CHUNG
IPC分类号： H01L21/441 , H01L23/58
CPC分类号： H01L21/31641 , C23C16/405 , C23C16/45525 , C23C16/56 , H01L21/02178 , H01L21/02186 , H01L21/02189 , H01L21/022 , H01L21/0228 , H01L21/0234 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L28/40
摘要： A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.
摘要翻译：公开了一种在适用于半导体器件的电容器中形成电介质层的方法。该方法包括形成第一ZrO 2层，在第一ZrO 2层上使用等离子体处理形成界面层，并形成第二ZrO 2层， SUB>层。

8. 发明授权

US07939872B2 Multi-dielectric films for semiconductor devices and methods of fabricating multi-dielectric films 有权
标题翻译：用于半导体器件的多电介质膜和制造多介电膜的方法
公开(公告)号：US07939872B2
公开(公告)日：2011-05-10
申请号：US12079757
申请日：2008-03-28
申请人： Jong-Cheol Lee , Sang-Yeol Kang , Ki-Vin Lim , Hoon-Sang Choi , Eun-Ae Chung
发明人： Jong-Cheol Lee , Sang-Yeol Kang , Ki-Vin Lim , Hoon-Sang Choi , Eun-Ae Chung
IPC分类号： H01L29/51
CPC分类号： H01L21/022 , H01L21/02178 , H01L21/02192 , H01L21/02194 , H01L21/31641 , H01L21/31645 , H01L27/10852 , H01L28/56 , H01L29/511
摘要： A multi-dielectric film including at least one first dielectric film that is a composite film made of zirconium-hafnium-oxide and at least one second dielectric film that is a metal oxide film made of amorphous metal oxide. Adjacent ones of the dielectric films are made of different materials.
摘要翻译：一种多介电膜，其包括至少一个作为由锆 - 铪氧化物构成的复合膜的第一电介质膜和至少一个作为由非晶态金属氧化物构成的金属氧化物膜的第二电介质膜。相邻的电介质膜由不同的材料制成。

9. 发明授权

US07759718B2 Method manufacturing capacitor dielectric 失效
标题翻译：方法制造电容器电介质
公开(公告)号：US07759718B2
公开(公告)日：2010-07-20
申请号：US11865869
申请日：2007-10-02
申请人： Sang-yeol Kang , Jong-cheol Lee , Ki-vin Im , Jae-hyun Yeo , Hoon-sang Choi , Eun-ae Chung
发明人： Sang-yeol Kang , Jong-cheol Lee , Ki-vin Im , Jae-hyun Yeo , Hoon-sang Choi , Eun-ae Chung
IPC分类号： H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L21/31641 , C23C16/405 , C23C16/45525 , C23C16/56 , H01L21/02178 , H01L21/02186 , H01L21/02189 , H01L21/022 , H01L21/0228 , H01L21/0234 , H01L21/3141 , H01L21/31604 , H01L21/31616 , H01L28/40
摘要： A method of forming a dielectric layer in a capacitor adapted for use in a semiconductor device is disclosed. The method includes forming a first ZrO2 layer, forming an interfacial layer using a plasma treatment on the first ZrO2 layer, and forming a second ZrO2 layer on the interfacial layer.
摘要翻译：公开了一种在适用于半导体器件的电容器中形成电介质层的方法。该方法包括形成第一ZrO 2层，在第一ZrO 2层上使用等离子体处理形成界面层，以及在界面层上形成第二ZrO 2层。

10. 发明申请

US20100134950A1 CAPACITOR 有权
标题翻译：电容器
公开(公告)号：US20100134950A1
公开(公告)日：2010-06-03
申请号：US12628598
申请日：2009-12-01
申请人： Hoon-Sang Choi , Ki-Vin Im , Se-Hoon Oh , Sang-Yeol Kang , Cha-Young Yoo
发明人： Hoon-Sang Choi , Ki-Vin Im , Se-Hoon Oh , Sang-Yeol Kang , Cha-Young Yoo
IPC分类号： H01G4/30 , H01L29/92
CPC分类号： H01G4/33 , H01G4/01 , H01L27/10817 , H01L27/10852 , H01L28/91
摘要： A capacitor includes a substrate, a plurality of first storage electrodes, a plurality of second storage electrodes, a first supporting layer pattern, a dielectric layer and a plate electrode. A plurality of contact pads is formed I the substrate. The first storage electrodes are arranged along lines parallel with a first direction and electrically connected to the contact pads, respectively. The second storage electrodes are respectively stacked on the first storage electrodes. The first supporting layer pattern extends in a direction parallel with the first direction between adjacent second storage electrodes and makes contact with the adjacent second storage electrodes to support the second storage electrodes. The dielectric layer is formed on the first and second storage electrodes. The plate electrode is formed on the dielectric layer.
摘要翻译：电容器包括基板，多个第一存储电极，多个第二存储电极，第一支撑层图案，电介质层和平板电极。在基板上形成多个接触焊盘。第一存储电极沿着与第一方向平行的线分别布置并且电连接到接触垫。第二存储电极分别堆叠在第一存储电极上。第一支撑层图案在与相邻的第二存储电极之间的第一方向平行的方向上延伸，并与相邻的第二存储电极接触以支撑第二存储电极。介电层形成在第一和第二存储电极上。在电介质层上形成平板电极。

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