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1. 发明授权

US07084477B2 Semiconductor device and manufacturing method of the same 失效
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US07084477B2
公开(公告)日：2006-08-01
申请号：US10600771
申请日：2003-06-23
申请人： Norio Ishitsuka , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Masahito Takahashi , Norio Suzuki , Shuji Ikeda , Hideki Tanaka , Hiroyuki Mima
发明人： Norio Ishitsuka , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Masahito Takahashi , Norio Suzuki , Shuji Ikeda , Hideki Tanaka , Hiroyuki Mima
IPC分类号： H01L29/00
CPC分类号： H01L27/11526 , H01L21/28123 , H01L21/76224 , H01L21/823481 , H01L27/105 , H01L27/11546
摘要： To suppress defects occurred in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.
摘要翻译：为了抑制在半导体衬底中发生的缺陷，半导体器件通过具有：半导体衬底; 具有形成在所述半导体衬底中的沟槽的元件隔离区域和嵌入所述沟槽中的嵌入绝缘膜; 形成在元件隔离区域附近形成的有源区，其中形成栅极绝缘膜并在栅极绝缘膜上形成栅电极; 以及形成为使得栅电极的至少一部分位于元件隔离区域上的区域，以及在栅电极为第一元件隔离区域的嵌入绝缘膜的上侧的第一边缘表面定位在位于绝缘膜的第二边缘表面上方的第二元件隔离区域中，栅极电极膜未被定位。

2. 发明授权

US06692847B2 Magneto resistive sensor 失效
标题翻译：磁阻传感器
公开(公告)号：US06692847B2
公开(公告)日：2004-02-17
申请号：US10020946
申请日：2001-12-19
申请人： Fumio Shirasaki , Hiroyuki Mima , Hitoshi Harata , Hiromitsu Itabashi
发明人： Fumio Shirasaki , Hiroyuki Mima , Hitoshi Harata , Hiromitsu Itabashi
IPC分类号： B32B1900
CPC分类号： B82Y25/00 , G01R33/093 , H01F10/324 , Y10T428/1129
摘要： A magneto resistive sensor having a GMR magnetic laminated film is disclosed. The GMR magnetic laminated film comprises a plurality of magnetic thin layers having a NiCoFeB composition alternately laminated with a nonmagnetic thin layer, such as copper layer. Since the magnetic thin layer contains B in its composition, the GMR magnetic laminated film can stand in magneto resistance ratio (&Dgr;R/R %) under a high temperature of up to 250 degrees centigrade. By the reason, electric wiring can be connected by a lead-free solder to assemble a magnetic resistive sensor for a magnetic rotary encoder. The thermal resistance variation and the magneto resistance ratio are further improved when a NiFeCr underlayer is used under the GMR magnetic laminated film.
摘要翻译：公开了一种具有GMR磁性层压膜的磁阻传感器。 GMR磁性层叠膜包括多个具有交替层叠有诸如铜层的非磁性薄层的NiCoFeB组成的磁性薄层。由于磁性薄层在其组成中含有B，因此在高达250摄氏度的高温下，GMR磁性层叠膜可以承受磁阻比（DeltaR / R％）。因此，可以通过无铅焊料连接电线，以组装用于磁性旋转编码器的磁阻传感器。当在GMR磁性层叠膜下使用NiFeCr底层时，热阻变化和磁阻比进一步提高。

3. 发明授权

US06538847B2 Magnetic head having separated upper magnetic cores for avoiding magnetic saturation and manufacturing method of same 有权
标题翻译：具有分离的上磁心以避免磁饱和的磁头及其制造方法
公开(公告)号：US06538847B2
公开(公告)日：2003-03-25
申请号：US09764351
申请日：2001-01-19
申请人： Satoshi Meguro , Shigeo Fujii , Hiroyuki Mima , Toshihiro Ifuka
发明人： Satoshi Meguro , Shigeo Fujii , Hiroyuki Mima , Toshihiro Ifuka
IPC分类号： G11B5147
CPC分类号： B82Y10/00 , G11B5/3116 , G11B5/312 , G11B5/313 , G11B5/3163 , G11B5/3967
摘要： An inductive magnetic head used for high-density recording having such a construction that prevents magnetic leakage near a magnetic pole at the tip of the magnetic core and reduces magnetic resistance or reluctance at an upper magnetic core front portion is disclosed. An upper magnetic core facing a lower magnetic core with a non-magnetic gap layer interposed therebetween comprises an upper magnetic core front portion near a magnetic pole, and an upper magnetic core rear portion at the rear portion. The front portion has a parallel portion having a width almost equal to the track width extending from the magnetic pole toward the rear end of the front portion, and a sector at the rear of an apex. The front portion has a non-magnetic gap with the lower magnetic core at an area between the magnetic pole and the apex, and the gap between the front portion and the lower magnetic core is wider than the magnetic gap at the rear of the apex. The tip portion of the upper magnetic core rear portion is overlapped and connected to the upper magnetic core front portion on the medium-facing surface side of the apex, extending therefrom to the upper part of a coil and a coil insulating layer.
摘要翻译：公开了一种用于高密度记录的感应磁头，其具有防止在磁芯顶端附近的磁极附近的磁泄漏并降低上磁芯前部的磁阻或磁阻的结构。面对具有介于其间的非磁隙层的下磁芯的上磁芯包括在磁极附近的上磁芯前部和在后部的上磁芯后部。前部具有平行部分，该平行部分的宽度几乎等于从磁极向前部的后端延伸的轨道宽度，以及在顶点后部的扇形部分。前部在磁极和顶点之间的区域处具有与下磁芯的非磁性间隙，并且前部和下磁芯之间的间隙比顶点后部的磁隙宽。上部磁芯后部的前端部与顶点的面向中间的表面侧的上部磁芯前部重叠并连接，从而向上延伸到线圈的上部和线圈绝缘层。

4. 发明申请

US20060214254A1 Semiconductor device and manufacturing method of the same 审中-公开
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US20060214254A1
公开(公告)日：2006-09-28
申请号：US11443226
申请日：2006-05-31
申请人： Norio Ishitsuka , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Masahito Takahashi , Norio Suzuki , Shuji Ikeda , Hideki Tanaka , Hiroyuki Mima
发明人： Norio Ishitsuka , Tomio Iwasaki , Hiroyuki Ohta , Hideo Miura , Masahito Takahashi , Norio Suzuki , Shuji Ikeda , Hideki Tanaka , Hiroyuki Mima
IPC分类号： H01L29/00
CPC分类号： H01L27/11526 , H01L21/28123 , H01L21/76224 , H01L21/823481 , H01L27/105 , H01L27/11546
摘要： To suppress occurrence of defects in a semiconductor substrate, a semiconductor device is constituted by having: the semiconductor substrate; an element isolating region having a trench formed in the semiconductor substrate and an embedding insulating film which is embedded into the trench; an active region formed adjacent to the element isolating region, in which a gate insulating film is formed and a gate electrode is formed on the gate insulating film; and a region formed in such a manner that at least a portion of the gate electrode is positioned on the element isolating region, and a first edge surface of an upper side of the embedding insulating film in a first element isolating region where the gate electrode is positioned is located above a second edge surface of the embedding insulating film in a second element isolating region where the gate electrode film is not positioned.
摘要翻译：为了抑制半导体衬底中的缺陷的发生，半导体器件通过具有：半导体衬底; 具有形成在所述半导体衬底中的沟槽的元件隔离区域和嵌入所述沟槽中的嵌入绝缘膜; 形成在元件隔离区域附近形成的有源区，其中形成栅极绝缘膜并在栅极绝缘膜上形成栅电极; 以及形成为使得栅电极的至少一部分位于元件隔离区域上的区域，以及在栅电极为第一元件隔离区域的嵌入绝缘膜的上侧的第一边缘表面定位在位于绝缘膜的第二边缘表面上方的第二元件隔离区域中，栅极电极膜未被定位。

5. 发明授权

US06556007B1 Bearing sensor having magneto resistive elements 有权
标题翻译：轴承传感器具有磁阻元件
公开(公告)号：US06556007B1
公开(公告)日：2003-04-29
申请号：US10057979
申请日：2002-01-29
申请人： Yasunori Abe , Osamu Shimoe , Yukimasa Shonowaki , Hiromitsu Itabashi , Hiroyuki Mima , Hitoshi Harata
发明人： Yasunori Abe , Osamu Shimoe , Yukimasa Shonowaki , Hiromitsu Itabashi , Hiroyuki Mima , Hitoshi Harata
IPC分类号： G01R3302
CPC分类号： G01R33/09 , G01R33/0206
摘要： To provide a bearing sensor having a thin plane coil for applying a biasing magnetic field and at least one magneto resistive element pair (a first magneto resistive thin plate and a second magneto resistive thin plate) crossing opposed conductor sides of the coil. The plane coil has at least one pair of opposed conductor sides (a first side and a second side). The first magneto resistive thin plate and the first side cross one another at an angle more than 30 degrees and less than 90 degrees. The second magneto resistive thin plate and the second side cross one another at an angle more than 30 degrees and less than 90 degrees. While biasing magnetic fields in opposite directions are applied to the magneto resistive thin plates, respectively, intermediate potentials of the magneto resistive element pair are measured to determine bearings based on the difference between the intermediate potentials.
摘要翻译：提供具有用于施加偏置磁场的薄平面线圈和与线圈的相对的导体侧相交的至少一个磁阻元件对（第一磁阻薄膜和第二磁阻薄膜）的轴承传感器。平面线圈具有至少一对相对的导体侧（第一侧和第二侧）。第一磁阻薄板和第一面以大于30度且小于90度的角度交叉。第二磁阻薄板和第二侧以大于30度且小于90度的角度交叉。虽然分别将相反方向的磁场施加到磁电阻薄板，但是测量磁阻元件对的中间电位以根据中间电位之间的差来确定轴承。

6. 发明授权

US3609141A Magnesium slat of 5-methyl-3-(2,6-dichlorophenyl)-4-isoxazolyl-penicillin 失效
标题翻译： 5-甲基-3-（2,6-二氯苯基）-4-异恶唑烷酮的镁片
公开(公告)号：US3609141A
公开(公告)日：1971-09-28
申请号：US3609141D
申请日：1969-02-17
申请人： HIROSHI FUJISAWA , KEIICHI SUGIMOTO , KATSUO AOKI , TAI MATSUZAWA , SEIZO KAWAZIRI , HIROYUKI MIMA , NOBUYUKI KITAMORI , MINAMIKOSHIEN NISHINMIGA
发明人： FUJISAWA HIROSHI , SUGIMOTO KEIICHI , AOKI KATSUO , MATSUZAWA TAI , KAWAZIRI SEIZO , MIMA HIROYUKI , KITAMORI NOBUYUKI , NISHINMIGA MINAMIKOSHIEN
IPC分类号： A61K31/43 , C07D499/00 , C07D499/16 , C07D499/76 , C07D99/16
CPC分类号： C07D499/00 , A61K31/43
摘要： Magnesium salt of 5-methyl-3-(2,6-dichlorophenyl)-4-isoxazolylpenicillin demonstrates antimicrobial activity.

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