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1. 发明授权

US07164932B1 Millimeter band signal transmitting/receiving system having function of transmitting/receiving millimeter band signal and house provided with the same 有权
标题翻译：具有发送/接收毫米波段信号功能的毫米波段信号发射/接收系统及其提供的房屋
公开(公告)号：US07164932B1
公开(公告)日：2007-01-16
申请号：US09400974
申请日：1999-09-22
申请人： Hiroya Sato , Eiji Suematsu , Yoshihisa Amano , Tamotsu Aoki , Yoshinori Seki
发明人： Hiroya Sato , Eiji Suematsu , Yoshihisa Amano , Tamotsu Aoki , Yoshinori Seki
IPC分类号： H04M1/00
CPC分类号： H01Q25/00
摘要： A millimeter band transmitter transmits one or more indirect path signal waves from the main lobe of a transmit antenna, and a direct path signal wave is transmitted in a side lobe of the transmit antenna. A receiver simultaneously receives each of the indirect and direct path signal waves if the receive antenna is unobstructed. If the direct line of sight path between the transmitter and receiver is blocked, the receiver only receives one or more of the indirect path signal waves.
摘要翻译：毫米波段发射机从发射天线的主瓣发送一个或多个间接路径信号波，并且直接路径信号波在发射天线的旁瓣中传输。如果接收天线不受阻碍，则接收机同时接收每个间接和直接路径信号波。如果发射机和接收机之间的直接视线路径被阻挡，接收机只接收一个或多个间接路径信号波。

2. 发明授权

US5719415A Hetero-junction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US5719415A
公开(公告)日：1998-02-17
申请号：US615430
申请日：1996-03-14
申请人： Motoji Yagura , John Kevin Twynam , Hiroya Sato , Toshiaki Kinosada , Koken Yoshikawa
发明人： Motoji Yagura , John Kevin Twynam , Hiroya Sato , Toshiaki Kinosada , Koken Yoshikawa
IPC分类号： H01L29/73 , H01L21/331 , H01L29/423 , H01L29/45 , H01L29/737 , H01L31/0328
CPC分类号： H01L29/7371 , H01L29/42304 , H01L29/452
摘要： A hetero-junction bipolar transistor includes: a substrate; a first conductive type collector layer disposed on the substrate; a second conductive type base layer having an external base region; and a first conductive type emitter layer having a bandgap larger than the bandgap of the base layer disposed in this order, wherein the emitter layer includes a first emitter layer, an etching stop layer, and a second emitter layer disposed in this order starting from the substrate side; a base electrode is formed on the etching stop layer or the first emitter layer disposed on the external base region; a region of the first emitter layer on the base layer has a thickness such that the region is substantially depleted at all voltages applied when the transistor is normally operated; the second emitter layer has an electron affinity equal to or smaller than an electron affinity of the first emitter layer; and the etching stop layer has an electron affinity larger than the electron affinity of the first emitter layer, and has a thickness of approximately 3 nm.
摘要翻译：异质结双极晶体管包括：基板; 设置在所述基板上的第一导电型集电极层; 具有外部基极区域的第二导电型基极层; 以及第一导电型发射极层，其具有比该基底层的带隙大的带隙，其顺次设置，其中，发射极层包括第一发射极层，蚀刻停止层和从该基板侧; 在蚀刻停止层或设置在外部基极区上的第一发射极层上形成基极; 基极层上的第一发射极层的区域具有使得当晶体管正常工作时所施加的所有电压的区域基本上被耗尽的厚度; 第二发射极层的电子亲和力等于或小于第一发射极层的电子亲和力; 并且蚀刻停止层的电子亲和力大于第一发射极层的电子亲和力，并且具有约3nm的厚度。

3. 发明授权

US5373185A Multilayer vertical transistor having an overlay electrode connected to the top layer of the transistor and to the transistor substrate 失效
标题翻译：多层垂直晶体管具有连接到晶体管的顶层和晶体管衬底的覆盖电极
公开(公告)号：US5373185A
公开(公告)日：1994-12-13
申请号：US121500
申请日：1993-09-16
申请人： Hiroya Sato
发明人： Hiroya Sato
IPC分类号： H01L29/205 , H01L21/331 , H01L27/06 , H01L27/082 , H01L29/73 , H01L29/737 , H01L29/70 , H01L29/52 , H01L29/54
CPC分类号： H01L29/7371 , H01L27/0605 , H01L27/082
摘要： A vertical type construction transistor of this invention includes: a semiconductor substrate; a semiconductor multilayer formed on the semiconductor substrate, the semiconductor multilayer including at least an emitter layer, a collector layer, and a base layer; a first electrode electrically connected to the base layer; a second electrode electrically connected to one of the emitter layer and the collector layer; a third electrode formed on the semiconductor multilayer, and electrically connected to the other of the emitter layer and the collector layer, the third electrode being extended in a first direction; an insulating film formed substantially over the semiconductor multilayer; and an overlay electrode at least partially formed on the insulating film, the overlay electrode being electrically connected to the third electrode, at least partially formed on the insulating film, and extending out in a direction normal to the first direction so as to be in partial contact with the semiconductor substrate, the overlay electrode having a width substantially similar to the length of the third electrode in the first direction.
摘要翻译：本发明的垂直型结构晶体管包括：半导体衬底; 形成在所述半导体衬底上的所述半导体层，所述半导体层至少包括发射极层，集电极层和基极层; 电连接到所述基底层的第一电极; 电连接到发射极层和集电极层之一的第二电极; 形成在所述半导体多层上的第三电极，并且电连接到所述发射极层和所述集电极层中的另一个，所述第三电极沿第一方向延伸; 基本上形成在半导体多层上的绝缘膜; 以及至少部分地形成在所述绝缘膜上的覆盖电极，所述覆盖电极电连接到所述第三电极，至少部分地形成在所述绝缘膜上，并且沿着与所述第一方向正交的方向延伸以部分地与半导体衬底接触，覆盖电极具有与第一方向上的第三电极的长度基本相似的宽度。

4. 发明授权

US5252500A Method of fabricating a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5252500A
公开(公告)日：1993-10-12
申请号：US843346
申请日：1992-02-28
申请人： Hiroya Sato
发明人： Hiroya Sato
IPC分类号： H01L29/205 , H01L21/28 , H01L21/331 , H01L29/73 , H01L29/737 , H01L21/265
CPC分类号： H01L29/66318 , H01L21/28 , Y10S148/011 , Y10S148/072
摘要： There is provided a method of fabricating a semiconductor device. This method includes the steps of: forming a collector layer, a base layer, an emitter layer, and a dummy layer; patterning the dummy layer and the emitter layer into a mesa structure; forming a base electrode on the base layer in self-alignment to the mesa structure, and simultaneously forming a base electrode material on the dummy layer; forming a surface planarization film on the base layer to cover sides of the mesa structure; and removing the base electrode material and the dummy layer. The removal of the dummy layer is performed by subjecting the dummy layer to an etchant through an opening in the base electrode material.
摘要翻译：提供了制造半导体器件的方法。该方法包括以下步骤：形成集电极层，基极层，发射极层和虚设层; 将所述虚设层和所述发射极层图案化成台面结构; 在基底层上形成与台面结构自对准的基极，同时在虚设层上形成基极材料; 在所述基底层上形成表面平坦化膜以覆盖所述台面结构的侧面; 以及去除所述基极材料和所述虚设层。虚拟层的去除是通过使基底电极材料中的开口对虚设层进行蚀刻而进行的。

5. 发明授权

US06492973B1 Method of driving a flat display capable of wireless connection and device for driving the same 有权
标题翻译：驱动能够进行无线连接的平板显示器的驱动方法
公开(公告)号：US06492973B1
公开(公告)日：2002-12-10
申请号：US09407073
申请日：1999-09-28
申请人： Futoshi Kuroki , Tetsu Araki , Hiroya Sato , Tamotsu Aoki
发明人： Futoshi Kuroki , Tetsu Araki , Hiroya Sato , Tamotsu Aoki
IPC分类号： G09G336
CPC分类号： G09G5/006 , G09G3/3688 , G09G2310/0224 , G09G2310/027
摘要： A signal to be displayed that is output from a display signal source is upconverted and transmitted in the form of a millimeter-wave which is in turn downconverted and supplied to a flat display and displayed there.
摘要翻译：从显示信号源输出的要显示的信号被上变频并以毫米波的形式传送，该毫米波又被下变频并提供给平面显示器并在那里显示。

6. 发明申请

US20050177854A1 Milliwave transmitting device, milliwave receiving device and milliwave transmission and reception system capable of simplifying wiring of a receiving system of terrestrial broadcasting service and satellite broadcasting service 审中-公开
标题翻译：毫米波发射装置，毫秒波接收装置和毫微波发射和接收系统，能够简化地面广播业务和卫星广播业务接收系统的布线
公开(公告)号：US20050177854A1
公开(公告)日：2005-08-11
申请号：US11105458
申请日：2005-04-14
申请人： Eiji Suematsu , Hiroya Sato
发明人： Eiji Suematsu , Hiroya Sato
IPC分类号： H04B1/16 , H04B1/26 , H04B7/00 , H04H20/63 , H04H40/90 , H04H60/90 , H04N5/00 , H04N7/10 , H04N7/20 , H04N21/414 , H04N21/61 , H04N21/647 , H04N7/18 , G06F13/00 , H04N7/16 , H04N7/173
CPC分类号： H04H40/90 , H04H20/63 , H04H60/90 , H04N7/106 , H04N7/20
摘要： In conventionally receiving satellite broadcasting (BS, CS) and terrestrial broadcasting (VHF, UHF) services, transmitting the services to a plurality of TV receivers in an individual house results in complicated wiring and a community house is also limited in the number of installed TV receivers due to previously setting a distributor and thus requires an additional distributor to be installed when a TV receiver is additionally installed. The milliwave receiving and transmitting system of the present invention allows a broadcast signal to be transmitted and received indoors via indoor, wireless milliwave transmission without using any indoor wiring.
摘要翻译：在传统接收卫星广播（BS，CS）和地面广播（VHF，UHF）服务中，将服务发送到单独的房屋中的多个TV接收机导致复杂的布线，并且社区房屋的数量也受到限制接收机由于以前设置了分配器，因此在额外安装电视接收机时需要安装额外的分配器。本发明的微波接收和发送系统允许广播信号经由室内无线毫米波传输在室内发送和接收，而不使用任何室内布线。

7. 发明授权

US06188137B1 Ohmic electrode structure, semiconductor device including such ohmic electrode structure, and method for producing such semiconductor device 失效
标题翻译：欧姆电极结构，包括这种欧姆电极结构的半导体器件，以及用于制造这种半导体器件的方法
公开(公告)号：US06188137B1
公开(公告)日：2001-02-13
申请号：US08652303
申请日：1996-05-23
申请人： Motoji Yagura , Hiroya Sato
发明人： Motoji Yagura , Hiroya Sato
IPC分类号： H01L2348
CPC分类号： H01L29/452 , H01L29/7371 , H01L29/802 , H01L2924/0002 , H01L2924/00
摘要： An ohmic electrode structure includes an n-InxGa1−xAs layer where 0
摘要翻译：欧姆电极结构包括其中0

8. 发明授权

US5158897A Method for the production of a semiconductor device by implanting fluorocarbon ions 失效
标题翻译：通过注入氟碳离子制造半导体器件的方法
公开(公告)号：US5158897A
公开(公告)日：1992-10-27
申请号：US740197
申请日：1991-08-02
申请人： Hiroya Sato , Toshiaki Kinosada , Yasuhito Nakagawa
发明人： Hiroya Sato , Toshiaki Kinosada , Yasuhito Nakagawa
IPC分类号： H01L29/73 , H01L21/265 , H01L21/324 , H01L21/331 , H01L29/205 , H01L29/737
CPC分类号： H01L29/66318 , H01L21/26546 , H01L21/2658
摘要： There is provided a method for producing a semiconductor device having a semiconductor layer in which carbon is implanted as an impurity. The method includes the steps of: implanting fluorocarbon ions in a semiconductor layer; and annealing the semiconductor layer to activate the implanted ions.
摘要翻译：提供一种制造半导体器件的方法，该半导体器件具有其中作为杂质注入碳的半导体层。该方法包括以下步骤：在半导体层中注入碳氟离子; 并退火半导体层以激活注入的离子。

9. 发明授权

US5831337A Vertical-type transistor device, having a bump electrode that has a shape with no interior angle exceeding 270.degree. 失效
标题翻译：具有不具有内角超过270度的形状的凸块电极的垂直型晶体管器件
公开(公告)号：US5831337A
公开(公告)日：1998-11-03
申请号：US685671
申请日：1996-07-26
申请人： Hiroya Sato
发明人： Hiroya Sato
IPC分类号： H01L29/73 , H01L21/331 , H01L21/60 , H01L23/485 , H01L29/737 , H01L23/48 , H01L23/52 , H01L27/082 , H01L29/40
CPC分类号： H01L24/10 , H01L24/13 , H01L2224/13 , H01L2224/13099 , H01L2224/45144 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/12036 , H01L2924/1301 , H01L2924/1305 , H01L2924/13064 , H01L2924/1423 , H01L2924/30105 , H01L2924/30107 , H01L2924/3025
摘要： A vertical transistor is provided on and extends in a first direction along a surface of a substrate. A bump electrode is formed over the transistor and crosses the transistor in a second direction perpendicular to the first direction. The bump electrode is butterfly-shaped and has a first area overlapping the transistor and a second area that does not overlap with the transistor. The size of the second area in the first direction is greater than the size of the first area in the first direction. The bump electrode shape has no interior angle exceeding 270.degree..
摘要翻译：垂直晶体管设置在沿着基板的表面的第一方向上并沿其延伸。突起电极形成在晶体管上方，并且在垂直于第一方向的第二方向上与晶体管交叉。凸块电极是蝴蝶形的并且具有与晶体管重叠的第一区域和不与晶体管重叠的第二区域。第一方向上的第二区域的尺寸大于第一方向上的第一区域的尺寸。凸起电极形状的内角没有超过270°。

10. 发明授权

US5444300A Semiconductor apparatus with heat sink 失效
标题翻译：带散热片的半导体设备
公开(公告)号：US5444300A
公开(公告)日：1995-08-22
申请号：US925785
申请日：1992-08-07
申请人： Hiroya Sato , Masato Miyauchi
发明人： Hiroya Sato , Masato Miyauchi
IPC分类号： H01L21/52 , H01L21/338 , H01L21/60 , H01L23/12 , H01L23/367 , H01L23/485 , H01L29/778 , H01L29/812 , H01L23/48 , H01L29/44 , H01L29/52 , H01L29/60
CPC分类号： H01L24/10 , H01L23/367 , H01L24/13 , H01L24/48 , H01L2224/0401 , H01L2224/13 , H01L2224/13099 , H01L2224/16145 , H01L2224/451 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L24/45 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10329 , H01L2924/10336 , H01L2924/1301 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/1423 , H01L2924/30107
摘要： A semiconductor apparatus is provided which includes a semiconductor chip on its one plane with a plurality of terminal electrodes, which are divided into a plurality of bundles, a bump provided on one of the bundles of terminal electrodes, a connect member of heat conductivity having a plane connected with the plane of the bump, and other connect members for connecting the other bundles of terminal electrodes regardless of the connect member. As a result, the terminal resistance of the semiconductor apparatus is considerably reduced.
摘要翻译：提供了一种半导体装置，其在其一个平面上包括多个端子电极，分成多个束，设置在端子电极束中的一个上的凸块，具有导热性的连接构件与凸点平面连接的平面以及用于连接其他端子电极束的其它连接构件，而不管连接构件如何。结果，半导体装置的端子电阻显着降低。

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