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1. 发明申请

US20100240211A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK 有权
标题翻译：半导体器件，其制造方法和相移片掩模
公开(公告)号：US20100240211A1
公开(公告)日：2010-09-23
申请号：US12764210
申请日：2010-04-21
申请人： Kenichi WATANABE , Michiari KAWANO , Hiroshi NAMBA , Kazuo SUKEGAWA , Takumi HASEGAWA , Toyoji SAWADA
发明人： Kenichi WATANABE , Michiari KAWANO , Hiroshi NAMBA , Kazuo SUKEGAWA , Takumi HASEGAWA , Toyoji SAWADA
IPC分类号： H01L21/768
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.
摘要翻译：一种制造半导体器件的方法，包括形成有集成电路的集成电路部分和包括围绕所述集成电路部分的金属膜的主壁部分的步骤包括以下步骤：在集成电路部分之间选择性地形成包括金属膜的副壁部分电路部分和主壁部分，并联形成集成电路部分和主壁部分。在主壁部的每个角部和所得到的半导体器件的集成电路部分之间设置有“L”形的副壁部。

2. 发明授权

US08507377B2 Semiconductor device, method of manufacturing the same, and phase shift mask 有权
标题翻译：半导体装置及其制造方法以及相移掩模
公开(公告)号：US08507377B2
公开(公告)日：2013-08-13
申请号：US12764210
申请日：2010-04-21
申请人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
发明人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
IPC分类号： H01L21/4763
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A method of manufacturing a semiconductor device including an integrated circuit part in which an integrated circuit is formed and a main wall part including metal films surrounding said integrated circuit part, includes the step of selectively forming a sub-wall part including metal films between the integrated circuit part and the main wall part, in parallel to formation of the integrated circuit part and the main wall part. A sub-wall part which is in an “L” shape is provided between each corner of the main wall part and the integrated circuit part of the resulting semiconductor device.
摘要翻译：一种制造半导体器件的方法，包括形成有集成电路的集成电路部分和包括围绕所述集成电路部分的金属膜的主壁部分的步骤包括以下步骤：在集成电路部分之间选择性地形成包括金属膜的副壁部分电路部分和主壁部分，并联形成集成电路部分和主壁部分。在主壁部的每个角部和所得到的半导体器件的集成电路部分之间设置有“L”形的副壁部。

3. 发明授权

US07755169B2 Semiconductor device, method of manufacturing the same, and phase shift mask 有权
标题翻译：半导体装置及其制造方法以及相移掩模
公开(公告)号：US07755169B2
公开(公告)日：2010-07-13
申请号：US12357919
申请日：2009-01-22
申请人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
发明人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
IPC分类号： H01L23/544
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.
摘要翻译：主壁部设置为围绕集成电路部。在主壁部的各个角部和集成电路部之间设置有“L”形的副壁部。因此，即使由于热处理等引起的应力集中，与常规的相比也不容易发生应力分散到主壁部和副壁部，因此层之间的剥离和裂纹不可能发生艺术。此外，即使在角部发生裂纹等，当主壁部和副壁部彼此结合时，来自外部的水分几乎不到达集成电路部。因此，可以确保极高的耐湿性。

4. 发明授权

US07498659B2 Semiconductor device, method of manufacturing the same, and phase shift mask 有权
标题翻译：半导体装置及其制造方法以及相移掩模
公开(公告)号：US07498659B2
公开(公告)日：2009-03-03
申请号：US11352273
申请日：2006-02-13
申请人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
发明人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
IPC分类号： H01L23/544
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.
摘要翻译：主壁部设置为围绕集成电路部。在主壁部的各个角部和集成电路部之间设置有“L”形的副壁部。因此，即使由于热处理等引起的应力集中，与常规的相比也不容易发生应力分散到主壁部和副壁部，因此层之间的剥离和裂纹不可能发生艺术。此外，即使在角部发生裂纹等，当主壁部和副壁部彼此结合时，来自外部的水分几乎不到达集成电路部。因此，可以确保极高的耐湿性。

5. 发明授权

US07129565B2 Semiconductor device, method of manufacturing the same, and phase shift mask 有权
公开(公告)号：US07129565B2
公开(公告)日：2006-10-31
申请号：US10349934
申请日：2003-01-24
申请人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
发明人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
IPC分类号： H01L23/544
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.

6. 发明申请

US20060194124A1 Semiconductor device, method of manufacturing the same, and phase shift mask 有权
公开(公告)号：US20060194124A1
公开(公告)日：2006-08-31
申请号：US11352273
申请日：2006-02-13
申请人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
发明人： Kenichi Watanabe , Michiari Kawano , Hiroshi Namba , Kazuo Sukegawa , Takumi Hasegawa , Toyoji Sawada
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.

7. 发明授权

US4300556A Facial beauty device 失效
标题翻译：面部美容仪
公开(公告)号：US4300556A
公开(公告)日：1981-11-17
申请号：US172706
申请日：1980-07-25
申请人： Shuhei Ochi , Fumiya Ueda , Nobuyuki Morihara , Hiroshi Namba , Motohisa Nishino , Shigeo Yamamoto
发明人： Shuhei Ochi , Fumiya Ueda , Nobuyuki Morihara , Hiroshi Namba , Motohisa Nishino , Shigeo Yamamoto
IPC分类号： A61H33/12 , A61H35/00 , A61F7/00
CPC分类号： A61H33/12 , A61H35/008
摘要： A facial beauty device attainable, in addition to facial sauna effect with a heated and highly moistened atmosphere, a facial skin washing effect by means of water spray and simultaneously both facial skin tightening and massaging effects accompanying inherent cooling and spray pressure, respectively. The device is provided with a moistening means oscillating water in a reservoir within a body case at a frequency of an ultrasonic band and delivering generated mist into a hood on the case to provide a highly moistened atmosphere within the hood, means for heating the mist by passing it through an electric resistive heater or carrying it onto the hood with hot air stream heated by the heater, and means for spraying water in the reservoir or from a tank capable of automatically supplying water responsive to falling water level in the reservoir toward a face contacting opening of the hood through nozzles opened in the hood by means of a pump. Preferably further provided is a spray rocking mechanism for providing sprays of a pattern elongated in the width direction of the user's face and blown while being moved between jaw and forehead through nozzles positioned on the forehead side. As desired, the heating means is arranged so that only a hot air stream can be fed into the hood after water is sprayed.
摘要翻译：面部美容装置除了具有加热和高度润湿的气氛的面部桑拿效果外，还可以通过喷水进行面部皮肤清洁效果，同时兼顾伴随固有冷却和喷雾压力的面部皮肤收紧和按摩效果。该装置设置有在超声带的频率下在主体壳体内的储存器中振荡水的润湿装置，并且将产生的雾输送到壳体上的罩中，以在罩内提供高度湿润的气氛，用于通过将其通过电阻加热器或将其运送到具有由加热器加热的热空气流引导到发动机罩上的装置，以及用于将储存器中的水或从能够自动地向储存器中的下降水位自动供应水的罐喷向面部的装置通过泵通过在罩中打开的喷嘴使发动机罩的开口接触。进一步提供一种喷雾摇摆机构，用于提供在用户面部的宽度方向上细长的图案的喷雾，并且在通过位于前额侧的喷嘴在夹爪和前额之间移动时被吹送。根据需要，加热装置被布置成使得在喷水之后只有热空气流可以被供给到罩中。

8. 发明申请

US20090127666A1 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND PHASE SHIFT MASK 有权
标题翻译：半导体器件，其制造方法和相移片掩模
公开(公告)号：US20090127666A1
公开(公告)日：2009-05-21
申请号：US12357919
申请日：2009-01-22
申请人： Kenichi WATANABE , Michiari KAWANO , Hiroshi NAMBA , Kazuo SUKEGAWA , Takumi HASEGAWA , Toyoji SAWADA , Junichi Mitani
发明人： Kenichi WATANABE , Michiari KAWANO , Hiroshi NAMBA , Kazuo SUKEGAWA , Takumi HASEGAWA , Toyoji SAWADA , Junichi Mitani
IPC分类号： H01L23/00
CPC分类号： G03F1/26 , G03F1/32 , H01L21/76811 , H01L21/76813 , H01L23/562 , H01L23/564 , H01L23/585 , H01L2221/1036 , H01L2924/0002 , H01L2924/01078 , H01L2924/3025 , H01L2924/00
摘要： A main wall part is provided so as to surround an integrated circuit part. A sub-wall part which is in “L” shape is provided between each corner of the main wall part and the integrated circuit part. Therefore, even if the stress is concentrated due to heat treatment or the like, the stress is dispersed to the main wall part and the sub-wall part, and hence peeling between layers and a crack are unlikely to occur, as compared with the conventional art. Further, even if the crack and the like occur at the corner, moisture from the outside hardly reaches the integrated circuit part when the main wall part and the sub-wall part are coupled to each other. For this reason, it is possible to ensure an extremely high moisture resistance.
摘要翻译：主壁部设置为围绕集成电路部。在主壁部的各个角部和集成电路部之间设置有“L”形的副壁部。因此，即使由于热处理等引起的应力集中，与常规的相比也不容易发生应力分散到主壁部和副壁部，因此层之间的剥离和裂纹不可能发生艺术。此外，即使在角部发生裂纹等，当主壁部和副壁部彼此结合时，来自外部的水分几乎不到达集成电路部。因此，可以确保极高的耐湿性。

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