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1. 发明申请

US20120223220A1 Calibration Method of UV Sensor for UV Curing 有权
标题翻译：紫外线固化紫外线传感器的校准方法
公开(公告)号：US20120223220A1
公开(公告)日：2012-09-06
申请号：US13040013
申请日：2011-03-03
申请人： Hirofumi Arai
发明人： Hirofumi Arai
IPC分类号： G01D18/00 , G01J1/42
CPC分类号： G01J1/429
摘要： A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval.
摘要翻译：一种用于在用UV光连续处理多个基板的过程中用于处理基板的UV照射的方法包括：以第一间隔将第一UV传感器暴露于UV光以测量UV光的照射强度，以便调节照明强度基于测量的照明强度达到期望的水平; 并且以第二间隔将第二UV传感器暴露于UV光以测量UV光的照射强度，以便通过将由第一UV传感器测量的照明强度基本上与由第二UV测量的照射强度相等来校准第一UV传感器传感器，其中每个第二间隔比每个第一间隔长。

2. 发明授权

US08466411B2 Calibration method of UV sensor for UV curing 有权
标题翻译： UV固化紫外线传感器的校准方法
公开(公告)号：US08466411B2
公开(公告)日：2013-06-18
申请号：US13040013
申请日：2011-03-03
申请人： Hirofumi Arai
发明人： Hirofumi Arai
IPC分类号： G01D18/00 , G01R31/26
CPC分类号： G01J1/429
摘要： A method for managing UV irradiation for treating substrates in the course of treating multiple substrates consecutively with UV light, includes: exposing a first UV sensor to the UV light at first intervals to measure illumination intensity of the UV light so as to adjust the illumination intensity to a desired level based on the measured illumination intensity; and exposing a second UV sensor to the UV light at second intervals to measure illumination intensity of the UV light so as to calibrate the first UV sensor by equalizing the illumination intensity measured by the first UV sensor substantially with the illumination intensity measured by the second UV sensor, wherein each second interval is longer than each first interval.
摘要翻译：一种用于在用UV光连续处理多个基板的过程中用于处理基板的UV照射的方法包括：以第一间隔将第一UV传感器暴露于UV光以测量UV光的照射强度，以便调节照明强度基于测量的照明强度达到期望的水平; 并且以第二间隔将第二UV传感器暴露于UV光以测量UV光的照射强度，以便通过将由第一UV传感器测量的照明强度基本上与由第二UV测量的照射强度相等来校准第一UV传感器传感器，其中每个第二间隔比每个第一间隔长。

3. 发明申请

US20080299747A1 METHOD FOR FORMING AMORPHOUSE SILICON FILM BY PLASMA CVD 审中-公开
标题翻译：通过等离子体CVD形成非晶硅膜的方法
公开(公告)号：US20080299747A1
公开(公告)日：2008-12-04
申请号：US11755432
申请日：2007-05-30
申请人： Hirofumi ARAI , Takashige WATANABE
发明人： Hirofumi ARAI , Takashige WATANABE
IPC分类号： H01L21/20
CPC分类号： C23C16/52 , C23C16/24 , H01L21/02532 , H01L21/02592 , H01L21/0262
摘要： A method includes introducing a silicon-containing source gas and a dilution gas to a reactor to deposit an amorphous silicon film on a substrate by plasma CVD; and adjusting a compressive film stress to 300 MPa or less and a uniformity of film thickness within the substrate surface to ±5% or less of the amorphous silicon film depositing on the substrate as a function of a flow rate of the source gas, a flow rate of the dilution gas, and a pressure of the reactor which are used as control parameters.
摘要翻译：一种方法包括将含硅源气体和稀释气体引入反应器，通过等离子体CVD将非晶硅膜沉积在衬底上; 并且将压缩膜应力调整至300MPa以下，将基板表面的膜厚均匀化为基板上沉积的非晶硅膜的±5％以下，作为源气体的流量的函数，流量稀释气体的速率和用作控制参数的反应器的压力。

4. 发明授权

US07234476B2 Method of cleaning CVD equipment processing chamber 有权
标题翻译：清洗CVD设备处理室的方法
公开(公告)号：US07234476B2
公开(公告)日：2007-06-26
申请号：US10385984
申请日：2003-03-10
申请人： Hirofumi Arai , Hideaki Fukuda
发明人： Hirofumi Arai , Hideaki Fukuda
IPC分类号： B08B9/093
CPC分类号： H01J37/32862 , B08B7/0035 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A method of remote plasma cleaning a processing chamber of CVD equipment, which has high cleaning rates, low cleaning operational cost and high efficiency, is provided. The method comprises supplying cleaning gas to the remote plasma-discharge device; activating the cleaning gas inside the remote plasma-discharge device; and bringing the activated cleaning gas into the processing chamber and which is characterized in that a mixed gas of F2 gas and an inert gas are used as the cleaning gas. A concentration of the F2 gas is 10% or higher. The F2 gas, which is a cleaning gas, is supplied to the remote plasma-discharge device from an F2 gas cylinder by diluting F2 gas at a given concentration by an inert gas.
摘要翻译：提供了一种远程等离子体清洁CVD设备的处理室，其具有高清洁率，低清洗操作成本和高效率。该方法包括向远程等离子体放电装置提供清洁气体; 激活远程等离子体放电装置内的清洁气体; 并将活化的清洁气体引入处理室中，其特征在于使用F 2气体和惰性气体的混合气体作为清洁气体。 F 2气体的浓度为10％以上。作为清洁气体的F 2气体从F 2气瓶通过稀释F 2 2 / SUB提供给远程等离子体放电装置通过惰性气体给出给定浓度的气体。

5. 发明授权

US6136104A Copper alloy for terminals and connectors and method for making same 失效
标题翻译：用于端子和连接器的铜合金及其制造方法
公开(公告)号：US6136104A
公开(公告)日：2000-10-24
申请号：US348290
申请日：1999-07-07
申请人： Motohisa Miyafuji , Hirofumi Arai , Koya Nomura
发明人： Motohisa Miyafuji , Hirofumi Arai , Koya Nomura
IPC分类号： C22C9/00 , C22C9/02 , C22C9/04
CPC分类号： C22C9/02 , C22C9/04
摘要： A copper alloy which is adapted for use as terminals and connectors, which comprises from 0.1 wt % to less than 0.5 wt % of Ni, from larger than 1.0 wt % to less than 2.5 wt % of Sn, from larger than 1.0 wt % to 15 wt % of Zn, and further comprises from at least one element selected between from 0.0001 wt % to less than 0.05 wt % of P and from 0.0001 wt % to 0.005 wt % of Si, and the balance being Cu and inevitable impurities The alloy has an electrical conductivity of 90% or below relative to a maximum electrical conductivity of an annealed copper alloy and an area ratio of insoluble matters such as precipitates is 5% or below.
摘要翻译：适合用作端子和连接器的铜合金，其包含0.1重量％至小于0.5重量％的Ni，大于1.0重量％至小于2.5重量％的Sn，大于1.0重量％至大于1.0重量％ 15重量％的Zn，还包含从0.0001重量％至小于0.05重量％的P和0.0001重量％至0.005重量％的Si中选择的至少一种元素，余量为Cu和不可避免的杂质合金相对于退火铜合金的最大导电率为90％以下的电导率，不溶物例如析出物的面积比为5％以下。

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