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1. 发明授权

US07192835B2 Method of forming a high-k film on a semiconductor device 有权
标题翻译：在半导体器件上形成高k膜的方法
公开(公告)号：US07192835B2
公开(公告)日：2007-03-20
申请号：US10854306
申请日：2004-05-27
申请人： Hiroaki Tomimori , Hidemitsu Aoki , Toshiyuki Iwamoto
发明人： Hiroaki Tomimori , Hidemitsu Aoki , Toshiyuki Iwamoto
IPC分类号： H01L21/302 , H01L21/336
CPC分类号： H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/31111 , H01L28/40 , H01L29/511 , H01L29/517 , H01L29/518
摘要： According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric constant insulating film 54 comprising HfSiOx is formed thereon. Thereafter, polycrystalline silicon layer 56 and high dielectric constant insulating film 54 are selectively removed in stages by a dry etching through a mask of the resist layer 58, and subsequently, the residual portion of the high dielectric constant insulating film 54 and the silicon oxide film 52 are selectively removed by wet etching through a mask of polycrystalline silicon layer 56. A liquid mixture of phosphoric acid and sulfuric acid is employed for the etchant solution. The temperature of the etchant solution is preferably equal to or lower than 200 degree C., and more preferably equal to or less than 180 degree C.
摘要翻译：根据本发明，可以蚀刻高k膜以提供期望的几何形状而不损坏硅基底材料。通过热氧化在硅衬底50上形成氧化硅膜52，并且在其上形成包括HfSiO x的高介电常数绝缘膜54。此后，通过干蚀刻通过抗蚀剂层58的掩模来分阶段地去除多晶硅层56和高介电常数绝缘膜54，随后，高介电常数绝缘膜54和氧化硅膜的残留部分 52通过湿蚀刻被选择性地通过多晶硅层56的掩模去除。对于蚀刻剂溶液使用磷酸和硫酸的液体混合物。蚀刻剂溶液的温度优选等于或低于200℃，更优选等于或小于180℃。

2. 发明申请

US20070015351A1 Process or making a semiconductor device having a roughened surface 有权
标题翻译：处理或制造具有粗糙表面的半导体器件
公开(公告)号：US20070015351A1
公开(公告)日：2007-01-18
申请号：US11525943
申请日：2006-09-25
申请人： Hiroaki Tomimori , Hidemitsu Aoki , Kaoru Mikagi , Akira Furuya , Tetsuya Tao
发明人： Hiroaki Tomimori , Hidemitsu Aoki , Kaoru Mikagi , Akira Furuya , Tetsuya Tao
IPC分类号： H01L21/44 , H01L21/302
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03019 , H01L2224/035 , H01L2224/0381 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05557 , H01L2224/05561 , H01L2224/05567 , H01L2224/05647 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2224/05552
摘要： An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.
摘要翻译：通过用有机酸处理表面，在铜膜的表面上形成凹凸后，用草酸清洗形成在电极焊盘的铜膜表面上的氧化膜。由此，通过使探针与电极焊盘接触进行特性检查时，获得稳定的电阻，并且通过用显微镜观察容易地识别出探针与电极焊盘接触。此外，相对于焊料的润湿性是令人满意的，并且可以有利地在电极焊盘上形成焊料凸块。

3. 发明授权

US07592266B2 Removing solution, cleaning method for semiconductor substrate, and process for production of semiconductor device 有权
标题翻译：去除溶液，半导体衬底的清洗方法以及半导体器件的制造方法
公开(公告)号：US07592266B2
公开(公告)日：2009-09-22
申请号：US11939575
申请日：2007-11-14
申请人： Hidemitsu Aoki , Hiroaki Tomimori
发明人： Hidemitsu Aoki , Hiroaki Tomimori
IPC分类号： H01L21/302
CPC分类号： H01L21/02074 , C11D3/3955 , C11D3/3956 , C11D7/105 , C11D11/0047 , C23F1/18 , C23F1/30 , H01L21/02087 , H01L21/0209 , H01L21/32134
摘要： The removing solution containing a cerium (IV) nitrate salt, periodic acid or a hypochlorite can be applied to metals containing copper, silver or palladium and also to metals containing other metals having a relatively large oxidation-reduction potential.
摘要翻译：含有硝酸铈（IV），高碘酸或次氯酸铈的去除溶液可以应用于含有铜，银或钯的金属，也可以用于含有其他具有较大氧化还原电位的金属的金属。

4. 发明授权

US07560372B2 Process for making a semiconductor device having a roughened surface 有权
标题翻译：制造具有粗糙表面的半导体器件的工艺
公开(公告)号：US07560372B2
公开(公告)日：2009-07-14
申请号：US11525943
申请日：2006-09-25
申请人： Hiroaki Tomimori , Hidemitsu Aoki , Kaoru Mikagi , Akira Furuya , Tetsuya Tao
发明人： Hiroaki Tomimori , Hidemitsu Aoki , Kaoru Mikagi , Akira Furuya , Tetsuya Tao
IPC分类号： H01L23/485 , H01L23/488
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03019 , H01L2224/035 , H01L2224/0381 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05557 , H01L2224/05561 , H01L2224/05567 , H01L2224/05647 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2224/05552
摘要： An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.
摘要翻译：通过用有机酸处理表面，在铜膜的表面上形成凹凸后，用草酸清洗形成在电极焊盘的铜膜表面上的氧化膜。由此，通过使探针与电极焊盘接触进行特性检查时，获得稳定的电阻，并且通过用显微镜观察容易地识别出探针与电极焊盘接触。此外，相对于焊料的润湿性是令人满意的，并且可以有利地在电极焊盘上形成焊料凸块。

5. 发明授权

US07170172B2 Semiconductor device having a roughened surface 有权
标题翻译：具有粗糙表面的半导体器件
公开(公告)号：US07170172B2
公开(公告)日：2007-01-30
申请号：US10318199
申请日：2002-12-13
申请人： Hiroaki Tomimori , Hidemitsu Aoki , Kaoru Mikagi , Akira Furuya , Tetsuya Tao
发明人： Hiroaki Tomimori , Hidemitsu Aoki , Kaoru Mikagi , Akira Furuya , Tetsuya Tao
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L24/03 , H01L24/05 , H01L24/11 , H01L24/13 , H01L2224/03019 , H01L2224/035 , H01L2224/0381 , H01L2224/0401 , H01L2224/05073 , H01L2224/05082 , H01L2224/05155 , H01L2224/05166 , H01L2224/05557 , H01L2224/05561 , H01L2224/05567 , H01L2224/05647 , H01L2924/0002 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/14 , H01L2224/05552
摘要： An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.
摘要翻译：通过用有机酸处理表面，在铜膜的表面上形成凹凸后，用草酸清洗形成在电极焊盘的铜膜表面上的氧化膜。由此，通过使探针与电极焊盘接触进行特性检查时，获得稳定的电阻，并且通过用显微镜观察容易地识别出探针与电极焊盘接触。此外，相对于焊料的润湿性是令人满意的，并且可以有利地在电极焊盘上形成焊料凸块。

6. 发明授权

US06897150B1 Semiconductor wafer surface and method of treating a semiconductor wafer surface 有权
标题翻译：半导体晶片表面和处理半导体晶片表面的方法
公开(公告)号：US06897150B1
公开(公告)日：2005-05-24
申请号：US09715000
申请日：2000-11-20
申请人： Hidemitsu Aoki , Hiroaki Tomimori
发明人： Hidemitsu Aoki , Hiroaki Tomimori
IPC分类号： H01L21/3205 , H01L21/02 , H01L21/304 , H01L21/306 , H01L21/321 , H01L21/44 , H01L21/768 , H01L23/52
CPC分类号： H01L21/02074 , H01L21/76834 , H01L21/76883
摘要： The present invention provides a method of treating a surface of a semiconductor substrate, the surface of the semiconductor substrate including at least any one of a copper region, a copper based region and a copper alloy region, the method comprises the steps of: carrying out an anti-corrosion treatment by exposing the surface of the semiconductor substrate to a solution containing an anti-corrosive agent; and forming a copper-diffusion stopper insulating film over the surface of the semiconductor substrate.
摘要翻译：本发明提供一种处理半导体衬底的表面的方法，所述半导体衬底的表面包括铜区域，铜基区域和铜合金区域中的至少一个，所述方法包括以下步骤：执行通过将半导体衬底的表面暴露于含有抗腐蚀剂的溶液的防腐蚀处理; 以及在所述半导体衬底的表面上形成铜扩散阻挡绝缘膜。

7. 发明授权

US06890864B2 Semiconductor device fabricating method and treating liquid 有权
标题翻译：半导体器件制造方法和处理液体
公开(公告)号：US06890864B2
公开(公告)日：2005-05-10
申请号：US10339658
申请日：2003-01-10
申请人： Hidemitsu Aoki , Kenichi Nakabeppu , Hiroaki Tomimori , Toshiyuki Takewaki , Nobuo Hironaga , Hiroyuki Kunishima
发明人： Hidemitsu Aoki , Kenichi Nakabeppu , Hiroaki Tomimori , Toshiyuki Takewaki , Nobuo Hironaga , Hiroyuki Kunishima
IPC分类号： H01L21/306 , H01L21/311 , H01L21/768 , H01L23/532 , H01L21/302 , H01L21/31
CPC分类号： H01L21/76844 , H01L21/02052 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814 , H01L21/76838 , H01L23/53228 , H01L23/53242 , H01L2924/0002 , H01L2924/00
摘要： There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2 water and is dried.
摘要翻译：提供了一种半导体器件制造方法，用于在半导体衬底上形成布线层，然后进行清洁，这可以防止布线层的洗脱和氧化，以及制造方法中使用的处理液。在等离子体气氛中形成Cu布线，Cu布线上的中间膜和在Intereraer膜中的露出Cu布线的表面的开口。将IPA喷涂到半导体器件上，然后用胺溶剂对其进行有机释放处理以除去蚀刻残留物。再次用IPA冲洗半导体器件以除去剩余的胺，然后用碱性处理液清洗。然后用纯水或CO 2水漂洗并干燥。

8. 发明授权

US06797648B2 Cleaning water for cleaning a wafer and method of cleaning a wafer 失效
标题翻译：用于清洁晶片的清洁水和清洁晶片的方法
公开(公告)号：US06797648B2
公开(公告)日：2004-09-28
申请号：US10167442
申请日：2002-06-13
申请人： Hidemitsu Aoki , Hiroaki Tomimori
发明人： Hidemitsu Aoki , Hiroaki Tomimori
IPC分类号： H01L2131
CPC分类号： H01L21/02074 , B08B3/04 , C02F2103/346 , G03F7/422 , H01L21/02052 , H01L21/0206 , H01L21/02071 , H01L21/0209 , H01L21/31133
摘要： A wafer is rotated while cleaning water is sprayed from a nozzle to the surface of this wafer. The cleaning water is an aqueous solution in which 1 to 2.5 ppm of hydrogen gas is dissolved in water with an additional, small amount of ammonium hydroxide. The cleaning water has a pH of 7.5 to 8.0, an oxidation-reduction potential of −0.6 to −0.45 V, and a resistivity of not greater than 1 M&OHgr;·cm. And the cleaning water is reducing water.
摘要翻译：旋转晶片，同时清洁水从喷嘴喷射到该晶片的表面。清洗水是其中1〜2.5ppm氢气与另外少量氢氧化铵溶解在水中的水溶液。清洗水的pH值为7.5〜8.0，氧化还原电位为-0.6〜-0.45V，电阻率为1Moga.cm以下。清洁水正在减少水分。

9. 发明授权

US07138362B2 Washing liquid composition for semiconductor substrate 有权
公开(公告)号：US07138362B2
公开(公告)日：2006-11-21
申请号：US10369877
申请日：2003-02-19
申请人： Yumiko Abe , Norio Ishikawa , Hidemitsu Aoki , Hiroaki Tomimori , Yoshiko Kasama
发明人： Yumiko Abe , Norio Ishikawa , Hidemitsu Aoki , Hiroaki Tomimori , Yoshiko Kasama
IPC分类号： C11D7/50
CPC分类号： C11D3/2082 , C11D1/004 , C11D1/22 , C11D1/24 , C11D1/345 , C11D1/72 , C11D3/2086 , C11D11/0047
摘要： There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

10. 发明授权

US06787480B2 Manufacturing method of semicondcutor device 失效
标题翻译：半切割装置的制造方法
公开(公告)号：US06787480B2
公开(公告)日：2004-09-07
申请号：US10071184
申请日：2002-02-11
申请人： Hidemitsu Aoki , Hiroaki Tomimori , Norio Okada , Tatsuya Usami , Koichi Ohto , Takamasa Tanikuni
发明人： Hidemitsu Aoki , Hiroaki Tomimori , Norio Okada , Tatsuya Usami , Koichi Ohto , Takamasa Tanikuni
IPC分类号： H01L21324
CPC分类号： H01L21/02074 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/3143 , H01L21/3144 , H01L21/3148 , H01L21/31633 , H01L21/3185 , H01L21/321 , H01L21/3212 , H01L21/76802 , H01L21/76834 , H01L21/7684 , H01L21/76846 , H01L21/76849 , H01L21/76864 , H01L21/76867 , H01L21/76883
摘要： In order to provide a manufacturing method of a semiconductor device which can improve the interconnection lifetime, while controlling the increase in resistance thereof, and, in addition, can raise the manufacturing stability; by applying a plasma treatment to the surface of a copper interconnection 17 with a source gas comprising a nitrogen element being used, a copper nitride layer 24 is formed, and thereafter a silicon nitride film 18 is formed. Hereat, under the copper nitride layer 24, a thin copper silicide layer 25 is formed.
摘要翻译：为了提供能够提高互连寿命的半导体器件的制造方法，同时控制其电阻的增加，并且还可以提高制造稳定性; 通过使用包含氮元素的源气体在铜互连17的表面上施加等离子体处理，形成氮化铜层24，然后形成氮化硅膜18。此时，在氮化铜层24的下方形成有薄的硅化铜层25。

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