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    • 2. 发明授权
    • Interchangeable load cell assemblies
    • 可互换称重传感器组件
    • US08277745B2
    • 2012-10-02
    • US11799692
    • 2007-05-02
    • Richard J. MehusHenry J. McCarrickBruce W. WeberBen J. Wiltsie
    • Richard J. MehusHenry J. McCarrickBruce W. WeberBen J. Wiltsie
    • B01D11/02G01G19/00
    • G01G21/23
    • A mass-based dispensing system includes a set of interchangeable load cell assemblies. The load cell assemblies are sized to be interchangeably received into a mass-based product dispenser. Each of the interchangeable load cell assemblies has a maximum rated load that is different from the maximum rated load of the other load cell assemblies. The interchangeable load cell assemblies are substantially modular (i.e., have substantially similar external geometries), thus enabling the product dispenser to interchangeably receive the load cells. The interchangeable load cell assemblies enable a single product dispenser to accommodate a broad range of differently weighted products and/or product containers.
    • 基于质量的分配系统包括一组可互换的称重传感器组件。 称重传感器组件的尺寸可互换地接收到基于质量的产品分配器中。 每个可互换的称重传感器组件具有不同于其他称重传感器组件的最大额定负载的最大额定负载。 可互换的称重传感器组件基本上是模块化的(即,具有基本相似的外部几何形状),从而使产品分配器可互换地接收称重传感器。 可互换的称重传感器组件使得单个产品分配器能够容纳宽范围的不同重量的产品和/或产品容器。
    • 3. 发明授权
    • Method for making thin film piezoresistive sensor
    • 制造薄膜压阻传感器的方法
    • US5518951A
    • 1996-05-21
    • US427846
    • 1995-04-26
    • Bruce PaynterHenry J. McCarrickJoseph W. Adamic, Jr.
    • Bruce PaynterHenry J. McCarrickJoseph W. Adamic, Jr.
    • G01L9/04G01L1/22G01L9/00H01L29/84H01L41/00H04R17/00H01L21/302
    • G01L1/2293G01L9/0055
    • Semiconductor piezoresistive sensors are fabricated by a process that includes plasma enhanced chemical vapor deposition and selective laser recrystallization. An insulating dielectric layer is first vapor deposited on a flexible substrate. A layer of highly resistive, doped semiconductor material is then deposited over the insulating layer. Metal contacts for the as yet to be formed piezoresistive sensor are deposited at selected locations on the semiconductor layer. Optionally, a passivating layer is then deposited over the semiconductor layer. Through selective laser annealing, portions of the semiconductor layer between selected metal contacts are recrystallized to a preselected resistance to form piezoresistive sensor elements. The non-annealed portions of the semiconductor layer remain to act as insulators between adjacent formed sensor elements.
    • 半导体压阻传感器通过包括等离子体增强化学气相沉积和选择性激光再结晶的工艺制造。 绝缘电介质层首先蒸镀在柔性基板上。 然后在绝缘层上沉积一层高电阻掺杂的半导体材料。 用于尚未形成的压阻传感器的金属触点沉积在半导体层上的选定位置处。 可选地,钝化层然后沉积在半导体层上。 通过选择性激光退火,所选择的金属触点之间的半导体层的部分被再结晶到预选的电阻以形成压阻传感器元件。 半导体层的未退火部分保持作为相邻形成的传感器元件之间的绝缘体。