专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5518951A Method for making thin film piezoresistive sensor 失效
标题翻译：制造薄膜压阻传感器的方法
公开(公告)号：US5518951A
公开(公告)日：1996-05-21
申请号：US427846
申请日：1995-04-26
申请人： Bruce Paynter , Henry J. McCarrick , Joseph W. Adamic, Jr.
发明人： Bruce Paynter , Henry J. McCarrick , Joseph W. Adamic, Jr.
IPC分类号： G01L9/04 , G01L1/22 , G01L9/00 , H01L29/84 , H01L41/00 , H04R17/00 , H01L21/302
CPC分类号： G01L1/2293 , G01L9/0055
摘要： Semiconductor piezoresistive sensors are fabricated by a process that includes plasma enhanced chemical vapor deposition and selective laser recrystallization. An insulating dielectric layer is first vapor deposited on a flexible substrate. A layer of highly resistive, doped semiconductor material is then deposited over the insulating layer. Metal contacts for the as yet to be formed piezoresistive sensor are deposited at selected locations on the semiconductor layer. Optionally, a passivating layer is then deposited over the semiconductor layer. Through selective laser annealing, portions of the semiconductor layer between selected metal contacts are recrystallized to a preselected resistance to form piezoresistive sensor elements. The non-annealed portions of the semiconductor layer remain to act as insulators between adjacent formed sensor elements.
摘要翻译：半导体压阻传感器通过包括等离子体增强化学气相沉积和选择性激光再结晶的工艺制造。绝缘电介质层首先蒸镀在柔性基板上。然后在绝缘层上沉积一层高电阻掺杂的半导体材料。用于尚未形成的压阻传感器的金属触点沉积在半导体层上的选定位置处。可选地，钝化层然后沉积在半导体层上。通过选择性激光退火，所选择的金属触点之间的半导体层的部分被再结晶到预选的电阻以形成压阻传感器元件。半导体层的未退火部分保持作为相邻形成的传感器元件之间的绝缘体。

IPRDB

热门服务

关于我们

友情链接

联系方式