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    • 1. 发明授权
    • Electrostatic discharge device for integrated circuits
    • 集成电路用静电放电装置
    • US06713816B1
    • 2004-03-30
    • US09529942
    • 2000-06-27
    • Heinrich WolfWolfgang Wilkening
    • Heinrich WolfWolfgang Wilkening
    • H01L2362
    • H01L27/0248
    • An ESD protection device for an integrated circuit, which is integrated in a semiconductor substrate of the integrated circuit, has a heavily doped p-region provided with a first connection electrode, a heavily doped n-region provided with a second connection electrode, a lightly doped p-region bordering on the heavily doped p-region, and a lightly doped n-region bordering on the heavily doped n-region and the lightly doped p-region in such a way that the lightly doped regions are arranged at least between the heavily doped regions. The distance which exists between the lightly doped p-region and the heavily doped n-region and which is determined by the lightly doped n-region is dimensioned in such a way that the depletion zone in the lightly doped n-region, which becomes larger as the blocking voltage applied to the connection electrodes increases, reaches the heavily doped n-region before the breakthrough voltage between the lightly doped n-region and the lightly doped p-region has been reached.
    • 集成在集成电路的半导体衬底中的用于集成电路的ESD保护器件具有重掺杂p区域,该重掺杂p区域设置有第一连接电极,设置有第二连接电极的重掺杂n区域, 掺杂在重掺杂p区上的掺杂p区,以及在重掺杂的n区和轻掺杂的p区附近的轻掺杂的n区,使得轻掺杂区至少布置在 重掺杂区域。 存在于轻掺杂的p区域和重掺杂的n区域之间并且由轻掺杂的n区域确定的距离的尺寸设计成使得轻掺杂的n区域中的耗尽区变大 随着施加到连接电极的阻挡电压增加,在达到轻掺杂的n区和轻掺杂p区之前的穿透电压之前达到重掺杂的n区。
    • 2. 发明授权
    • Method for profile-kneading workplaces
    • 轮廓揉搓工件的方法
    • US6094962A
    • 2000-08-01
    • US263180
    • 1999-03-05
    • Holger EisentrautHeinrich Wolf
    • Holger EisentrautHeinrich Wolf
    • B21J7/16
    • B21J7/16
    • For the profile kneading of workpiece in strand from (semiproducts) which are transported along a central axis into a working station (profile kneading machine) at least two dies situated opposite one another in pairs for working on the surface of the workpiece are driven by rams at their extremity remote from the axis; the rams are driven radially toward the axis by rolls (cylinders, balls) moving on a circular path relative to outer guiding surfaces of the rams; at the same time at least two pairs of dies, whose radial driving directions are displaced from one another by a given angle (90.degree.), are driven successively by the rolls in a radial direction by means of the guiding surfaces of the rams; the edge length of the dies in each working step is greater than the targeted edge length of the workpiece (semiproduct) that is to be worked.
    • 为了将沿着中心轴线输送的工件(半成品)的工件的型材揉合到加工工位(型材捏合机)中,至少两个模具成对地相对设置,用于在工件表面上进行加工, 远离轴线; 通过相对于公柱的外部引导表面在圆形路径上移动的辊(圆柱体,滚珠)径向地向着轴移动, 同时,其径向驱动方向相互偏移给定角度(90°)的至少两对模具通过该公柱的引导表面在径向方向上由辊连续地驱动; 每个工作步骤中的模具的边缘长度大于待加工的工件(半成品)的目标边缘长度。
    • 3. 发明授权
    • Composite electrical contact and bonding material
    • 复合电接触和接合材料
    • US4342893A
    • 1982-08-03
    • US78930
    • 1979-09-26
    • Heinrich Wolf
    • Heinrich Wolf
    • H01H1/06H01H11/04H01H11/06H01H1/02
    • H01H11/045Y10S428/929Y10S428/94Y10T29/49211Y10T29/49213Y10T29/49222Y10T428/12264Y10T428/12896
    • To permit direct bonding of a composite electric contact-and-bonding material to a carrier, such as a reed, magnetic strip, or the like, by thermo-electric heating, the side of the contact-and-bonding material is formed with projections, preferably projecting ridges, ribs, or beads, and a bonding or solder material in wire form is adhered, by rolling on to the valley between the projecting ridges, the bonding or soldering material leaving space free between adjacent ridges or ribs and not filling the entire recess, but projecting outwardly at least as far as the projections or ridges, and preferably slightly therebeyond. The soldering or bonding wire may have round or polygonal, preferably triangular cross section with a pointed tip extending outwardly to provide for concentration of heat upon resistance heating the contact material against the carrier strip.
    • 为了通过热电加热将复合电接触接合材料直接接合到诸如簧片,磁条等的载体上,接触接合材料的侧面形成有突起 优选突出的脊,肋或珠,并且通过滚动到突出脊之间的谷部,粘合或焊接材料在相邻的脊或肋之间离开空间而不会填充线状的粘合或焊接材料 整个凹部,但是向外突出至少与突起或脊部一样远,并且优选地稍微延伸。 焊接或接合线可以具有圆形或多边形,优选三角形横截面,其中尖端向外延伸,以便在将接触材料抵抗载体带的电阻加热时提供热量浓度。
    • 4. 发明授权
    • Manufacture of electrical contacts
    • 制造电气触点
    • US5421084A
    • 1995-06-06
    • US62298
    • 1993-05-14
    • Heinrich WolfDieter Feldmer
    • Heinrich WolfDieter Feldmer
    • H01H1/023B23K11/16H01H11/04H01H11/06H01R43/16
    • B23K11/163H01H11/045Y10T29/49204Y10T29/49208Y10T29/49224
    • To manufacture a starting material for electrical contacts, such as relay contacts, a contact sandwich in the form of a metal strip made of a material of good electrical conductivity is bonded to a contact support strip consisting essentially of copper by resistance welding. The bonding surface of the metal strip has wales or ridges running lengthwise, the crests of the ridges being tapered in cross section and being provided with a coating consisting essentially of silver. To produce an electrical contact, the ridges are pressed against a copper contact support and a high heat is produced at the crests of the ridges by a welding circuit. This results in the melting of the silver coating, which is forced between the ridges by the pressure applied through the electrodes of the welding circuit, where it forms a silver-copper alloy with a melting point close to the eutectic. The surface of the strip which is to be the working contact is disposed on the side of the strip opposite the side provided with the ridges.
    • 为了制造诸如继电器触点之类的电触点的起始材料,由导电性良好的材料形成的金属带形式的接触夹层结合到通过电阻焊接主要由铜组成的触点支撑条上。 金属带的接合表面具有纵向延伸的纵行或脊,脊的顶部在横截面上呈锥形并且设置有基本上由银组成的涂层。 为了产生电接触,脊被压在铜接触支架上,并且通过焊接电路在脊的顶部产生高热。 这导致银涂层的熔化,其通过焊接回路的电极施加的压力而被迫在脊之间,其中它形成熔点接近共晶的银 - 铜合金。 作为工作触点的条带的表面设置在与设置有脊的一侧相对的带的侧面上。
    • 5. 发明授权
    • ESD protective transistor
    • ESD保护晶体管
    • US06680493B1
    • 2004-01-20
    • US09889336
    • 2001-10-20
    • Heinrich WolfWolfgang WilkeningStephan Mettler
    • Heinrich WolfWolfgang WilkeningStephan Mettler
    • H01L2974
    • H01L27/0259
    • An ESD protective transistor comprises a heavily doped p-type base region which is arranged in a lightly doped p-well and which is provided with a first terminal. Furthermore, a heavily doped n-type emitter region is arranged in the lightly doped p-well. A heavily doped n-type collector region is separated from the lightly doped p-well through a lightly doped n-type region and is provided with a second terminal. The heavily doped n-type emitter region is not short-circuited with the heavily doped base region viy a common electrode and is of floating design. The doping types of the respective regions may be reversed.
    • ESD保护晶体管包括重掺杂的p型基区,其布置在轻掺杂的p阱中并且设置有第一端。 此外,重掺杂的n型发射极区域布置在轻掺杂的p阱中。 通过轻掺杂的n型区域将重掺杂的n型集电极区域与轻掺杂的p阱分离,并且设置有第二端子。 重掺杂的n型发射极区域不会与重掺杂的基极区域短路,并且具有浮动设计。 各个区域的掺杂类型可以相反。
    • 7. 发明授权
    • Welding process
    • 焊接工艺
    • US5883352A
    • 1999-03-16
    • US593930
    • 1996-01-30
    • Heinrich WolfDieter FeldmerRudolf Schnabl
    • Heinrich WolfDieter FeldmerRudolf Schnabl
    • H01R4/02H01R43/02B23K11/18
    • H01R43/0214H01R4/029
    • Intermediate material in the form of a metal strip with a contact area is provided with a projection on the bottom surface of its core area, i.e., on the surface to be joined to a contact carrier strip of copper or a copper alloy. The bottom surface of the strip facing the contact carrier strip is plated with a material which consists essentially of silver, and the melting point of the core area of the metal strip is above the melting point of silver. For the production of a semifinished product for electrical contacts, the metal strip is welded by its silver-coated bottom surface to the contact carrier strip, consisting essentially of copper. The silver from the coating on the core area of the metal strip and the copper from the contact carrier strip mix with each other and thus form an alloy which corresponds or is very close to the eutectic alloy with 28 wt. % of copper and the remainder of silver.
    • 具有接触区域的金属带形式的中间材料在其芯部区域的底表面上,即在与铜或铜合金的接触载体带接合的表面上设置有突起。 面向接触载体带的条的底表面镀有基本上由银组成的材料,并且金属带的芯部区域的熔点高于银的熔点。 为了生产用于电接触的半成品,金属带通过其银涂底面焊接到基本上由铜组成的接触载体带。 来自金属带的核心区域上的涂层的银和来自接触载体条的铜彼此混合,从而形成与28重量份的共晶合金对应或非常接近的合金。 铜的百分比和其余的银。