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    • 1. 发明授权
    • Method for fabricating semiconductor component with an optimized thickness
    • 制造具有优化厚度的半导体部件的方法
    • US06825110B2
    • 2004-11-30
    • US10312729
    • 2002-12-30
    • Stefan LinderHans Rudolf Zeller
    • Stefan LinderHans Rudolf Zeller
    • H01L214763
    • H01L29/66325H01L29/36H01L29/7395
    • In a method for fabricating a semiconductor component with a cathode and an anode from a wafer, the wafer is first provided with a stop zone, thereupon treated on the cathode side and only then reduced in its thickness, so that all that remains of the stop zone is a tail barrier zone. In this case, the stop zone is doped and reduced to the tail barrier zone in such a way that a quantitative optimization of the fabrication method and thus of a thinned semiconductor element is made possible. In said quantitative optimization, diverse parameters and their relation to one another are taken into account, in particular a dopant area density of a tail barrier zone, a dopant density at an anodal surface of the tail harrier zone, a dopant density of a base, a characteristic decay length or slope of the doping profile of the tail barrier zone, and also a thickness of a base—resulting from the wafer—from anode to cathode.
    • 在从晶片制造具有阴极和阳极的半导体部件的方法中,晶片首先设置有停止区域,然后在阴极侧进行处理,然后仅在其厚度上减小,使得所有剩下的停止 区域是尾部阻挡区域。 在这种情况下,停止区被掺杂并还原成尾部阻挡区,使得制造方法和减薄的半导体元件的定量优化成为可能。 在所述定量优化中,考虑了各种参数及其彼此之间的关系,特别是尾部阻挡区的掺杂剂区域密度,尾部区域的阳极表面处的掺杂剂密度,基底的掺杂剂密度, 尾阻挡区域的掺杂分布的特征衰减长度或斜率,以及从晶片从阳极到阴极的基底厚度。