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    • 1. 发明授权
    • Method for high-resolution processing of thin layers using electron beams
    • 使用电子束对薄层进行高分辨率处理的方法
    • US07786403B2
    • 2010-08-31
    • US10927956
    • 2004-08-27
    • Hans KoopsKlaus EdingerSergey BabinThorsten HofmannPetra Spies
    • Hans KoopsKlaus EdingerSergey BabinThorsten HofmannPetra Spies
    • B23K15/00H01L21/302H01L21/461
    • G03F1/74C23F1/12H01J2237/31744H01L21/32135
    • A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.
    • 一种用于在真空室中蚀刻铬层的方法,其可以包括将卤素化合物引入真空室,将电子束引导到要蚀刻的铬层的区域和/或将含氧化合物引入真空室中。 用于高分辨率地去除可以布置在具有差热导率的隔离器或基板上的金属和/或金属氧化物层的另外的方法可以包括将层布置在真空室内,用聚焦的方式轰击该层 电子束的能量为3-30keV,其中电子束可被引导,使得每时间和面积的能量传递导致该层在其熔化和/或蒸发点之上的局部加热,并且其中该层的去除可以 在没有将反应气体供应到真空室中的情况下进行。
    • 4. 发明申请
    • Material processing system and method
    • 材料加工系统及方法
    • US20050103272A1
    • 2005-05-19
    • US10923814
    • 2004-08-24
    • Hans KoopsPeter Hoffrogge
    • Hans KoopsPeter Hoffrogge
    • C23C16/00
    • H01J37/3056H01J2237/006H01J2237/162H01J2237/166H01J2237/31732H01J2237/31744
    • A material processing system for processing a work piece is provided. The material processing is effected by supplying a reactive gas and energetic radiation for activation of the reactive gas to a surrounding of a location of the work piece to be processed. The radiation is preferably provided by an electron microscope. An objective lens of the electron microscope is preferably disposed between a detector of the electron microscope and the work piece. A gas supply arrangement of the material processing system comprises a valve disposed spaced apart from the processing location, a gas volume between the valve and a location of emergence of the reaction gas being small. The gas supply arrangement further comprises a temperature-adjusted, especially cooled reservoir for accommodating a starting material for the reactive gas.
    • 提供了一种用于处理工件的材料处理系统。 材料处理通过提供反应气体和能量辐射来激活反应气体到待处理工件的位置的周围。 辐射优选由电子显微镜提供。 电子显微镜的物镜优选设置在电子显微镜的检测器和工件之间。 材料处理系统的气体供应装置包括与处理位置间隔开的阀,阀之间的气体体积和反应气体的出现位置较小。 气体供应装置还包括温度调节的特别冷却的储存器,用于容纳用于反应气体的起始材料。