专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160086943A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造半导体器件的方法
公开(公告)号：US20160086943A1
公开(公告)日：2016-03-24
申请号：US14857135
申请日：2015-09-17
申请人： Sun Young LEE , Jae Young Park , Han Ki Lee , Bon Young Koo , Hong Bum Park , Young Su Chung , Jae Jong Han
发明人： Sun Young LEE , Jae Young Park , Han Ki Lee , Bon Young Koo , Hong Bum Park , Young Su Chung , Jae Jong Han
IPC分类号： H01L27/088 , H01L29/423 , H01L29/06
CPC分类号： H01L29/42368 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02238 , H01L21/02247 , H01L21/02252 , H01L21/02255 , H01L21/302 , H01L21/30604 , H01L21/3065 , H01L21/3086 , H01L29/165 , H01L29/66818 , H01L29/7848 , H01L29/7854
摘要： A semiconductor device includes a substrate, an isolation layer on the substrate, and at least one active fin on the substrate. The isolation layer includes a first surface opposite a second surface. The first surface is contiguous with the substrate. The at least one active fin protrudes from the substrate and includes a first region having a side wall above the second surface of the isolation layer and a second region on the first region. The second region has an upper surface. The first region has a first width contiguous with the second surface of the isolation layer and a second width contiguous with the second region. The second width is 60% or greater than the first width (e.g., 60% to 100%).
摘要翻译：半导体器件包括衬底，衬底上的隔离层以及衬底上的至少一个活性鳍。隔离层包括与第二表面相对的第一表面。第一表面与基底相邻。所述至少一个活性翅片从所述基底突出并且包括具有位于所述隔离层的第二表面上方的侧壁的第一区域和所述第一区域上的第二区域。第二区域具有上表面。第一区域具有与隔离层的第二表面邻接的第一宽度和与第二区域相邻的第二宽度。第二宽度为第一宽度（例如，60％至100％）的60％或更大。

2. 发明申请

US20150147861A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING SURFACE TREATMENT AND SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD 有权
标题翻译：使用表面处理制造半导体器件的方法和由该方法制造的半导体器件
公开(公告)号：US20150147861A1
公开(公告)日：2015-05-28
申请号：US14543820
申请日：2014-11-17
申请人： JAEYOUNG PARK , SUNGHO KANG , KICHUL KIM , Sunyoung LEE , HAN KI LEE , BONYOUNG KOO
发明人： JAEYOUNG PARK , SUNGHO KANG , KICHUL KIM , Sunyoung LEE , HAN KI LEE , BONYOUNG KOO
IPC分类号： H01L21/3065 , H01L21/762 , H01L29/66
CPC分类号： H01L27/0886 , H01L21/0206 , H01L21/302 , H01L21/306 , H01L21/32053 , H01L21/76224 , H01L21/76802 , H01L21/76877 , H01L21/823412 , H01L21/823418 , H01L21/823431 , H01L21/823437 , H01L21/823475 , H01L21/823481 , H01L29/0649 , H01L29/0657 , H01L29/0847 , H01L29/34 , H01L29/45 , H01L29/66545 , H01L29/66636 , H01L29/66795
摘要： A method of manufacturing a semiconductor device includes forming a first plurality of recessed regions in a substrate, the substrate having a protruded active region between the first plurality of recessed regions and the protruded active region having an upper surface and a sidewall, forming a device isolation film in the first plurality of recessed regions, the device isolation film exposing the upper surface and an upper portion of the sidewall of the protruded active region, and performing a first plasma treatment on the exposed surface of the protruded active region, wherein the plasma treatment is performed using a plasma gas containing at least one of an inert gas and a hydrogen gas in a temperature of less than or equal to about 700.
摘要翻译：一种制造半导体器件的方法包括在衬底中形成第一多个凹陷区域，所述衬底在所述第一多个凹陷区域之间具有突出的有源区域和所述突出的有源区域具有上表面和侧壁，形成器件隔离在所述第一多个凹陷区域中的膜，所述器件隔离膜暴露所述突出的有源区的所述上表面和所述侧壁的上部，并且对所述突出的有源区的所述暴露表面进行第一等离子体处理，其中所述等离子体处理使用包含惰性气体和氢气中的至少一种的等离子体气体在小于或等于约700℃的温度下进行。

3. 发明申请

US20160049312A1 PLASMA TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：等离子体处理装置，基板处理方法和制造半导体器件的方法
公开(公告)号：US20160049312A1
公开(公告)日：2016-02-18
申请号：US14693873
申请日：2015-04-23
申请人： SUNGHO KANG , Sunyoung LEE , Jaehee LEE , HAN KI LEE , GEUNKYU CHOI
发明人： SUNGHO KANG , Sunyoung LEE , Jaehee LEE , HAN KI LEE , GEUNKYU CHOI
IPC分类号： H01L21/324 , H01L21/285 , H01L21/3105 , H01L21/3213 , H01L21/311 , H01L21/02 , H01L21/3065
CPC分类号： H01J37/32192 , H01J37/3244 , H01J37/32853 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/0262 , H01L21/302 , H01L21/31058 , H01L21/324 , H01L21/3247
摘要： A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.
摘要翻译：基板处理方法可以通过等离子体处理装置进行。基板处理方法可以包括：在处理室的内部空间的下部的平台上提供基板; 将第一工艺气体从形成在处理室的内壁处的第一喷嘴向上引导到内部空间的上部，第一处理气体是惰性气体，并且其中第一喷嘴是倾斜向上取向的喷嘴，其被构造成将第一工艺气体向上引导; 将第二工艺气体从形成在所述处理室的内壁处的第二喷嘴向下引导到所述内部空间的下部，所述第二工艺气体是氢气，并且其中所述第二喷嘴是倾斜向下定向的喷嘴，第二工序向下气; 以及将微波施加到所述内部空间的上部以将所述第一处理气体和所述第二处理气体激发成等离子体，然后处理所述基板。

4. 发明申请

US20160293705A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160293705A1
公开(公告)日：2016-10-06
申请号：US14977865
申请日：2015-12-22
申请人： Han-ki Lee , Jae-Young Park , Dong-Hun Lee , Bon-Young Koo , Sun-Young Lee , Jae-Jong Han
发明人： Han-ki Lee , Jae-Young Park , Dong-Hun Lee , Bon-Young Koo , Sun-Young Lee , Jae-Jong Han
IPC分类号： H01L29/10 , H01L29/786 , H01L29/423 , H01L29/78
CPC分类号： H01L29/1054 , H01L29/0673 , H01L29/068 , H01L29/42392 , H01L29/66795 , H01L29/775 , H01L29/785 , H01L29/78696
摘要： A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a multi-channel active pattern including germanium and an inner region and an outer region, the outer region formed along a profile of the inner region, and a germanium fraction of the outer region being smaller than a germanium fraction of the inner region. A gate electrode intersects the multi-channel active pattern.
摘要翻译：提供半导体器件及其制造方法。半导体器件包括包括锗和内部区域以及外部区域的多通道活性图案，沿着内部区域的轮廓形成外部区域，并且外部区域的锗部分小于内部区域的锗部分地区。栅电极与多通道有源图案相交。

5. 发明授权

US09362137B2 Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device 有权
标题翻译：等离子体处理装置，基板处理方法以及半导体装置的制造方法
公开(公告)号：US09362137B2
公开(公告)日：2016-06-07
申请号：US14693873
申请日：2015-04-23
申请人： Sungho Kang , Sunyoung Lee , Jaehee Lee , Han Ki Lee , Geunkyu Choi
发明人： Sungho Kang , Sunyoung Lee , Jaehee Lee , Han Ki Lee , Geunkyu Choi
IPC分类号： H05H1/00 , H01L21/324 , H01L21/02 , H01L21/285 , H01L21/3065 , H01L21/3213 , H01L21/311 , H01L21/3105
CPC分类号： H01J37/32192 , H01J37/3244 , H01J37/32853 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/0262 , H01L21/302 , H01L21/31058 , H01L21/324 , H01L21/3247
摘要： A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.
摘要翻译：基板处理方法可以通过等离子体处理装置进行。基板处理方法可以包括：在处理室的内部空间的下部的平台上提供基板; 将第一工艺气体从形成在处理室的内壁处的第一喷嘴向上引导到内部空间的上部，第一处理气体是惰性气体，并且其中第一喷嘴是倾斜向上取向的喷嘴，其被构造成将第一工艺气体向上引导; 将第二工艺气体从形成在所述处理室的内壁处的第二喷嘴向下引导到所述内部空间的下部，所述第二工艺气体是氢气，并且其中所述第二喷嘴是倾斜向下定向的喷嘴，第二工序向下气; 以及将微波施加到所述内部空间的上部以将所述第一处理气体和所述第二处理气体激发成等离子体，然后处理所述基板。

6. 发明申请

US20120299154A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEBICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20120299154A1
公开(公告)日：2012-11-29
申请号：US13459740
申请日：2012-04-30
申请人： Hyun-Jun Sim , Jae-Young Park , Hyun-Seung Kim , Sang-Bom Kang , Sun-Ghil Lee , Hyun-Deok Yang , Kang-Hun Moon , Han-Ki Lee , Sang-Mi Choi
发明人： Hyun-Jun Sim , Jae-Young Park , Hyun-Seung Kim , Sang-Bom Kang , Sun-Ghil Lee , Hyun-Deok Yang , Kang-Hun Moon , Han-Ki Lee , Sang-Mi Choi
IPC分类号： H01L29/00 , H01L21/336 , H01L21/04
CPC分类号： H01L29/6659 , H01L21/28185 , H01L21/28202 , H01L29/513 , H01L29/517 , H01L29/7833
摘要： A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal.
摘要翻译：通过在基板上形成第一绝缘层，在第一绝缘层上进行第一次氮化，形成第二绝缘层，依次进行第一和第二退火，制造具有改善的负偏压温度不稳定寿命特性的半导体器件第二绝缘层以形成第三绝缘层，其中所述第二退火在比所述第一退火更高的温度和不同的气体下进行。在第三绝缘层上进行第二次氮化，以形成第四绝缘层，并且在第四绝缘层上顺序的第三和第四退火形成第五绝缘层。第三退火在比第一退火更高的温度下进行，第四退火在比第二退火更高的温度下进行，并且具有比第三退火不同的气体。

7. 发明申请

US20120269498A1 UNIT FOR SUPPORTING A SUBSTRATE AND APPARATUS FOR TREATING A SUBSTRATE WITH THE UNIT 审中-公开
标题翻译：用于支持基板的装置和用于处理单元的基板的装置
公开(公告)号：US20120269498A1
公开(公告)日：2012-10-25
申请号：US13452052
申请日：2012-04-20
申请人： Gonsu KANG , Sangbom KANG , Jaeyoung PARK , Sungho KANG , Taegon KIM , Hyunsub EARM , Jong-hoon KANG , Kang Hun MOON , Han Ki LEE
发明人： Gonsu KANG , Sangbom KANG , Jaeyoung PARK , Sungho KANG , Taegon KIM , Hyunsub EARM , Jong-hoon KANG , Kang Hun MOON , Han Ki LEE
IPC分类号： F27D5/00 , F26B3/30
CPC分类号： F27B17/0025 , H01L21/67115 , H01L21/6875
摘要： A substrate treatment apparatus and a supporting unit are provided. The substrate treatment apparatus includes a chamber in which a substrate is processed; a supporting unit that is disposed in the chamber and is configured to support the substrate; and a heating member that is configured to apply heat to the substrate supported by the supporting unit. The supporting unit includes a plate; a plurality of supporting pins upwardly protruding from the plate; and at least one auxiliary pin upwardly protruding from the plate. A distance between a central point of the plate and the at least one auxiliary pin is different from a distance between the central point of the plate and the supporting pins.
摘要翻译：提供了基板处理装置和支撑单元。基板处理装置包括：处理基板的室; 支撑单元，其设置在所述室中并且构造成支撑所述基板; 以及加热构件，其构造成对由所述支撑单元支撑的所述基板施加热量。支撑单元包括板; 从所述板向上突出的多个支撑销; 以及从板向上突出的至少一个辅助销。板的中心点和至少一个辅助销之间的距离不同于板的中心点和支撑销之间的距离。

8. 发明申请

US20120086261A1 Round Toothbrush Bristles and Processing Method Thereof 有权
标题翻译：圆形牙刷刷毛及其加工方法
公开(公告)号：US20120086261A1
公开(公告)日：2012-04-12
申请号：US13377443
申请日：2009-08-26
申请人： Han-Ki Lee
发明人： Han-Ki Lee
IPC分类号： A46D1/00
CPC分类号： A46D1/04
摘要： Disclosed herein is a method of processing rounded toothbrush bristles using synthetic bristles. The method includes cutting one end of a filament bundle of synthetic bristles, mechanically polishing the cut end of the filament bundle of synthetic bristles, heat treating the polished end of the filament bundle of synthetic bristles, and caustisizing the heat-treated end of the filament bundle of synthetic bristles into a round shape. In this method, at least one end of the toothbrush bristle is softly rounded to protect gum damage due to irritation of the one end of the toothbrush bristle and to provide a gum massaging effect for healthy gum with the rounded end of the toothbrush bristle.
摘要翻译：本文公开了一种使用合成刷毛处理圆形牙刷刷毛的方法。该方法包括切割合成刷毛的丝束的一端，机械抛光合成刷毛的丝束的切割端，热处理合成刷毛的丝束的抛光端，并将丝的经热处理的末端烧焦合成刷毛束成圆形。在这种方法中，牙刷刷毛的至少一端是柔软的圆形，以保护由于牙刷刷毛的一端的刺激引起的牙龈损伤，并且为牙刷刷毛的圆形端提供用于健康牙龈的牙龈按摩效果。

9. 发明申请

US20160225586A1 PLASMA TREATING APPARATUS, SUBSTRATE TREATING METHOD, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20160225586A1
公开(公告)日：2016-08-04
申请号：US15095338
申请日：2016-04-11
申请人： SUNGHO KANG , Sunyoung LEE , Jaehee LEE , HAN KI LEE , GEUNKYU CHOI
发明人： SUNGHO KANG , Sunyoung LEE , Jaehee LEE , HAN KI LEE , GEUNKYU CHOI
IPC分类号： H01J37/32
CPC分类号： H01J37/32192 , H01J37/3244 , H01J37/32853 , H01J2237/332 , H01J2237/334 , H01J2237/335 , H01L21/0262 , H01L21/302 , H01L21/31058 , H01L21/324 , H01L21/3247
摘要： A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

10. 发明申请

US20120142159A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20120142159A1
公开(公告)日：2012-06-07
申请号：US13242302
申请日：2011-09-23
申请人： Tae-Gon Kim , Sang-Bom Kang , Jae-Young Park , Kang-Hun Moon , Hyun-Jun Sim , Seung-Hun Lee , Han-Ki Lee , Hyun-Seung Kim
发明人： Tae-Gon Kim , Sang-Bom Kang , Jae-Young Park , Kang-Hun Moon , Hyun-Jun Sim , Seung-Hun Lee , Han-Ki Lee , Hyun-Seung Kim
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/26586 , H01L21/2257 , H01L21/26513 , H01L29/6659 , H01L29/66628 , H01L29/66636 , H01L29/7834
摘要： Methods for fabricating a semiconductor device are provided wherein, in an embodiment, the method includes the steps of forming a gate electrode on a semiconductor substrate, forming a trench by recessing the semiconductor substrate in the vicinity of the gate electrode, doping an anti-diffusion ion into a portion of the semiconductor substrate in the trench, and growing an impurity-doped epitaxial layer on the semiconductor substrate doped with the anti-diffusion ion.
摘要翻译：提供了制造半导体器件的方法，其中在一个实施例中，该方法包括以下步骤：在半导体衬底上形成栅电极，通过在栅极附近凹入半导体衬底形成沟槽，掺杂抗扩散离子进入沟槽中的半导体衬底的一部分，并且在掺杂有抗扩散离子的半导体衬底上生长杂质掺杂的外延层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式