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1. 发明申请

US20120329686A1 NANOSTRUCTURES, THEIR USE AND PROCESS FOR THEIR PRODUCTION 有权
标题翻译： NANOSTRUCTURES，他们的使用和生产过程
公开(公告)号：US20120329686A1
公开(公告)日：2012-12-27
申请号：US13583760
申请日：2011-03-10
申请人： Reshef Tenne , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
发明人： Reshef Tenne , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
IPC分类号： C10M125/22 , H01B1/10 , C10M125/04 , H01B1/06 , C10M125/26 , B82Y40/00 , B82Y30/00
CPC分类号： H01B1/10 , B82Y30/00 , C01G1/00 , C01G39/06 , C01G41/00 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/34 , C01P2006/40
摘要： A lubricating and shock absorbing materials are described, which are based on nanoparticles having the formula A1-x-Bx-chalcogenide. Processes for their manufacture are also described.
摘要翻译：描述了基于具有式A1-x-Bx-硫族化物的纳米颗粒的润滑和减震材料。还描述了其制造方法。

2. 发明授权

US06720556B2 Electron spectroscopy employing controlled surface charging 失效
标题翻译：采用受控表面充电的电子光谱
公开(公告)号：US06720556B2
公开(公告)日：2004-04-13
申请号：US09847583
申请日：2001-05-03
申请人： Hagai Cohen , Israel Rubinstein
发明人： Hagai Cohen , Israel Rubinstein
IPC分类号： G01N23227
CPC分类号： G01N23/227 , B82Y15/00 , H01J2237/2522
摘要： A method of examining a sample, including: performing a first spectroscopic analysis of a surface portion of the sample when the sample surface portion is in a first electrical charge state; placing the sample surface portion in a second electrical charge state that is different from the first electrical charge state and performing a second spectroscopic analysis of the surface portion of the sample when the sample surface portion is in the second electrical charge state; and comparing the first spectroscopic analysis result with the second spectroscopic analysis result to obtain at least one of structural and electrical information about the sample.
摘要翻译：一种检查样品的方法，包括：当样品表面部分处于第一电荷状态时，对样品的表面部分进行第一光谱分析; 将样品表面部分置于不同于第一电荷状态的第二电荷状态，并且当样品表面部分处于第二电荷状态时，对样品的表面部分进行第二光谱分析; 以及将所述第一光谱分析结果与所述第二光谱分析结果进行比较，以获得关于所述样品的结构和电信息中的至少一个。

3. 发明授权

US07148478B2 Electrical measurements in samples 有权
标题翻译：样品电气测量
公开(公告)号：US07148478B2
公开(公告)日：2006-12-12
申请号：US10987192
申请日：2004-11-15
申请人： Hagai Cohen , Igor Lubomirsky
发明人： Hagai Cohen , Igor Lubomirsky
IPC分类号： H01J37/26 , G01R31/305
CPC分类号： G01N27/66 , G01N2223/076 , G01N2223/079 , G01N2223/081
摘要： A method and device are presented for measuring the electrical properties of a specimen. The specimen is excited with high energy radiation to cause emission of internal charged particles from the specimen. Electrical power is supplied to a circuit, that is formed by the specimen and any added component connected to a back contact of the specimen. The electric power supply includes at least one of the following: irradiating the circuit with low energy charged particles; subjecting the circuit to an external field of the kind affecting the flux of emitted internal charged particles, and supplying a bias voltage to the back contact of the specimen. During the power supply to the specimen, at least one of the following is carried out: an electric current through the specimen is measured, and the emitted charged particles are analyzed versus their energy (using a contactless voltmeter) which provides local potential values at chemical entities of the specimen. This technique enables determination of rich, chemically resolved, electrical properties of a specimen, such as I–V characteristic, and/or evaluation of a work function characteristic, and/or characterization of electric leakage or breakdown conditions of the sample, and/or characterization of accumulation of charge within at least one region of the sample, and/or chemically resolved photovoltaic characteristics (photovoltage and/or photocurrent) of the sample.
摘要翻译：提出了一种用于测量样品的电性能的方法和装置。样品被高能量辐射激发，从样品中发出内部带电粒子。电力被供给到由样本和连接到样品的背接触的任何附加组分形成的电路。电源包括以下至少之一：用低能量带电粒子照射电路; 对电路进行影响发射的内部带电粒子的通量的外部场，并向样品的背接触提供偏置电压。在向样品供电期间，进行以下至少一项：测量通过样品的电流，并分析发射的带电粒子与其能量（使用非接触式电压表）进行分析，其在化学品中提供局部电位值标本的实体。该技术能够测定样品的富集，化学拆分的电特性，例如IV特性，和/或功函数特征的评估，和/或样品的漏电或击穿条件的表征，和/或表征在样品的至少一个区域内的电荷积累和/或样品的化学分辨光伏特性（光电压和/或光电流）。

4. 发明申请

US20060103395A1 Electrical measurements in samples 有权
公开(公告)号：US20060103395A1
公开(公告)日：2006-05-18
申请号：US10987192
申请日：2004-11-15
申请人： Hagai Cohen , Igor Lubomirsky
发明人： Hagai Cohen , Igor Lubomirsky
IPC分类号： G01R31/302
CPC分类号： G01N27/66 , G01N2223/076 , G01N2223/079 , G01N2223/081
摘要： A method and device are presented for measuring the electrical properties of a specimen. The specimen is excited with high energy radiation to cause emission of internal charged particles from the specimen. Electrical power is supplied to a circuit, that is formed by the specimen and any added component connected to a back contact of the specimen. The electric power supply includes at least one of the following: irradiating the circuit with low energy charged particles; subjecting the circuit to an external field of the kind affecting the flux of emitted internal charged particles, and supplying a bias voltage to the back contact of the specimen. During the power supply to the specimen, at least one of the following is carried out: an electric current through the specimen is measured, and the emitted charged particles are analyzed versus their energy (using a contactless voltmeter) which provides local potential values at chemical entities of the specimen. This technique enables determination of rich, chemically resolved, electrical properties of a specimen, such as I-V characteristic, and/or evaluation of a work function characteristic, and/or characterization of electric leakage or breakdown conditions of the sample, and/or characterization of accumulation of charge within at least one region of the sample, and/or chemically resolved photovoltaic characteristics (photovoltage and/or photocurrent) of the sample.

5. 发明授权

US08507853B2 Method and system for determining depth profiling 失效
标题翻译：确定深度剖面的方法和系统
公开(公告)号：US08507853B2
公开(公告)日：2013-08-13
申请号：US13124224
申请日：2009-10-22
申请人： Hagai Cohen
发明人： Hagai Cohen
IPC分类号： H01J37/26
CPC分类号： H01J37/26 , G01N23/2273 , G01N23/2276
摘要： The present invention relates to a novel system and method for the determination of depth profiling with improved accuracy and reliability. The method comprises obtaining spectroscopic data from the sample while under at least two different electrical conditions of the sample, the spectroscopic data comprising a signal of charged particles emitted from the sample, and being indicative of a change in amplitude, spectral position and spectral shape of the signal from the sample while under different electrical conditions of the sample, the change being indicative of the compositional profile and spatial distribution for at least one chemical element in the sample along a direction through the sample.
摘要翻译：本发明涉及一种以提高的精度和可靠性确定深度剖面的新型系统和方法。该方法包括在样品的至少两个不同电气条件下从样品获得光谱数据，光谱数据包括从样品发射的带电粒子的信号，并且指示振幅，光谱位置和光谱形状的变化来自样品的信号在样品的不同电气条件下，该变化指示沿着穿过样品的方向的样品中至少一种化学元素的组成分布和空间分布。

6. 发明授权

US08329138B2 Fullerene-like nanostructures, their use and process for their production 有权
标题翻译：富勒烯样纳米结构，它们的使用和生产过程
公开(公告)号：US08329138B2
公开(公告)日：2012-12-11
申请号：US12721113
申请日：2010-03-10
申请人： Reshef Tenne , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
发明人： Reshef Tenne , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
IPC分类号： C01B19/04 , C01B17/00 , B01J19/00
CPC分类号： H01B1/10 , B82Y30/00 , C01G1/00 , C01G39/06 , C01G41/00 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/34 , C01P2006/40
摘要： A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1−x-Bx-chalcogenide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≦0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcogenide are described.
摘要翻译：描述了具有式A1-x-Bx-硫族化物的纳米结构，其为无机富勒烯样（IF）纳米结构或无机纳米管（INT））。 A是金属或过渡金属或金属和/或过渡金属的合金，B是不同于A的金属或过渡金属B，x是n。描述了其制造方法及其用于改变A-硫族化物的电子特性的用途。

7. 发明申请

US20110210246A1 METHOD AND SYSTEM FOR DETERMINING DEPTH PROFILING 失效
标题翻译：用于确定深度分布的方法和系统
公开(公告)号：US20110210246A1
公开(公告)日：2011-09-01
申请号：US13124224
申请日：2009-10-22
申请人： Hagai COHEN
发明人： Hagai COHEN
IPC分类号： H01J40/00
CPC分类号： H01J37/26 , G01N23/2273 , G01N23/2276
摘要： The present invention relates to a novel system and method for the determination of depth profiling with improved accuracy and reliability. The method comprises obtaining spectroscopic data from the sample while under at least two different electrical conditions of the sample, the spectroscopic data comprising a signal of charged particles emitted from the sample, and being indicative of a change in amplitude, spectral position and spectral shape of the signal from the sample while under different electrical conditions of the sample, the change being indicative of the compositional profile and spatial distribution for at least one chemical element in the sample along a direction through the sample.
摘要翻译：本发明涉及一种以提高的精度和可靠性确定深度剖面的新型系统和方法。该方法包括在样品的至少两个不同电气条件下从样品获得光谱数据，光谱数据包括从样品发射的带电粒子的信号，并且指示振幅，光谱位置和光谱形状的变化来自样品的信号在样品的不同电气条件下，该变化指示沿着穿过样品的方向的样品中至少一种化学元素的组成分布和空间分布。

8. 发明申请

US20100227782A1 FULLERENE-LIKE NANOSTRUCTURES, THEIR USE AND PROCESS FOR THEIR PRODUCTION 有权
标题翻译：丰富的纳米结构，他们的使用和生产过程
公开(公告)号：US20100227782A1
公开(公告)日：2010-09-09
申请号：US12721113
申请日：2010-03-10
申请人： Reshef TENNE , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
发明人： Reshef TENNE , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
IPC分类号： H01B1/02 , H01F1/00 , C10M125/04
CPC分类号： H01B1/10 , B82Y30/00 , C01G1/00 , C01G39/06 , C01G41/00 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/34 , C01P2006/40
摘要： A nanostructure, being either an Inorganic Fullerene-like (IF) nanostructure or an Inorganic Nanotube (INT), having the formula A1−x-Bx-chalcognide are described. A being a metal or transition metal or an alloy of metals and/or transition metals, B being a metal or transition metal B different from that of A and x being ≦0.3. A process for their manufacture and their use for modifying the electronic character of A-chalcognide are described.
摘要翻译：描述了具有式A1-x-Bx-硫族化合物的无机富勒烯样（IF）纳米结构或无机纳米管（INT））的纳米结构。 A是金属或过渡金属或金属和/或过渡金属的合金，B是不同于A的金属或过渡金属B，x是n。描述了其制造方法及其用于改变A-硫族的电子特性的用途。

9. 发明授权

US09496067B2 Nanostructures, their use and process for their production 有权
标题翻译：纳米结构，其使用和生产过程
公开(公告)号：US09496067B2
公开(公告)日：2016-11-15
申请号：US13583760
申请日：2011-03-10
申请人： Reshef Tenne , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
发明人： Reshef Tenne , Francis Leonard Deepak , Hagai Cohen , Sidney R. Cohen , Rita Rosentsveig , Lena Yadgarov
IPC分类号： H01B1/10 , B82Y30/00 , C01G1/00 , C01G39/06 , C01G41/00 , C10M125/22
CPC分类号： H01B1/10 , B82Y30/00 , C01G1/00 , C01G39/06 , C01G41/00 , C01P2002/52 , C01P2002/54 , C01P2002/72 , C01P2002/77 , C01P2002/85 , C01P2004/03 , C01P2004/04 , C01P2004/13 , C01P2004/34 , C01P2006/40
摘要： A lubricating and shock absorbing materials are described, which are based on nanoparticles having the formula A1-x-Bx-chalcogenide. Processes for their manufacture are also described.
摘要翻译：描述了基于具有式A1-x-Bx-硫族化物的纳米颗粒的润滑和减震材料。还描述了其制造方法。

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