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1. 发明授权

US07864614B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US07864614B2
公开(公告)日：2011-01-04
申请号：US12338041
申请日：2008-12-18
申请人： Tatsuro Midorikawa , Yasuhiko Honda , Gyosho Chin
发明人： Tatsuro Midorikawa , Yasuhiko Honda , Gyosho Chin
IPC分类号： G11C7/04
CPC分类号： G11C7/04 , G11C5/147 , G11C8/08 , G11C11/5642 , G11C16/28 , G11C16/30 , G11C2211/5621
摘要： A semiconductor memory device includes a memory cell array which includes a plurality of memory cells which are arrayed in a matrix at intersections between a plurality of word lines and a plurality of bit lines and a power supply circuit which includes a first band gap reference circuit which outputs a first output voltage, and a second band gap reference circuit which outputs a second output voltage having lower temperature characteristics than the first output voltage on a low temperature side, and generates a power supply voltage on the basis of the second output voltage at a time of a data write operation of the memory cells.
摘要翻译：半导体存储器件包括存储单元阵列，其包括在多个字线和多个位线之间的交叉处以矩阵排列的多个存储器单元，以及包括第一带隙基准电路的电源电路，输出第一输出电压和第二带隙基准电路，其在低温侧输出具有比第一输出电压低的温度特性的第二输出电压，并且基于第二输出电压在第二输出电压存储单元的数据写入操作的时间。

2. 发明申请

US20100109627A1 POWER CIRCUIT INCLUDING STEP-UP CIRCUIT AND STABILIZING METHOD THEREOF 有权
标题翻译：包括升压电路的电源电路及其稳定方法
公开(公告)号：US20100109627A1
公开(公告)日：2010-05-06
申请号：US12608417
申请日：2009-10-29
申请人： Akira UMEZAWA , Masaaki KUWAGATA , Yasuhiko HONDA , Gyosho CHIN
发明人： Akira UMEZAWA , Masaaki KUWAGATA , Yasuhiko HONDA , Gyosho CHIN
IPC分类号： G05F1/00
CPC分类号： H02M3/073 , G11C5/145 , H02M2001/0032 , Y02B70/16
摘要： A power circuit includes a reference potential circuit, a step-up circuit, and a conversion circuit. The reference potential circuit generates a reference potential. The step-up circuit generates a desired internal potential by stepping up a power supply potential. The step-up circuit includes a comparison circuit, a differential amplifier circuit, and a switch element. The comparison circuit outputs the result of comparison between a potential and the reference potential. The differential amplifier circuit is turned on or off by the operation control signal. The switch element performs on/off control according to the operation control signal and resets the output potential of the differential amplifier circuit. The conversion circuit converts the of the operation control signal so as to make longer the on period of the differential amplifier circuit and the off period of switch element.
摘要翻译：电源电路包括参考电位电路，升压电路和转换电路。参考电位电路产生参考电位。升压电路通过增加电源电位来产生所需的内部电位。升压电路包括比较电路，差分放大器电路和开关元件。比较电路输出电位和参考电位之间的比较结果。差分放大器电路由操作控制信号导通或关断。开关元件根据操作控制信号执行开/关控制，并且复位差分放大器电路的输出电位。转换电路将操作控制信号转换成使差分放大器电路的导通周期和开关元件的关闭周期变长。

3. 发明授权

US08169253B2 Power circuit including step-up circuit and stabilizing method thereof 有权
标题翻译：电源电路包括升压电路及其稳定方法
公开(公告)号：US08169253B2
公开(公告)日：2012-05-01
申请号：US12608417
申请日：2009-10-29
申请人： Akira Umezawa , Masaaki Kuwagata , Yasuhiko Honda , Gyosho Chin
发明人： Akira Umezawa , Masaaki Kuwagata , Yasuhiko Honda , Gyosho Chin
IPC分类号： H03K3/01
CPC分类号： H02M3/073 , G11C5/145 , H02M2001/0032 , Y02B70/16
摘要： A power circuit includes a reference potential circuit, a step-up circuit, and a conversion circuit. The reference potential circuit generates a reference potential. The step-up circuit generates a desired internal potential by stepping up a power supply potential. The step-up circuit includes a comparison circuit, a differential amplifier circuit, and a switch element. The comparison circuit outputs the result of comparison between a potential and the reference potential. The differential amplifier circuit is turned on or off by the operation control signal. The switch element performs on/off control according to the operation control signal and resets the output potential of the differential amplifier circuit. The conversion circuit converts the of the operation control signal so as to make longer the on period of the differential amplifier circuit and the off period of switch element.
摘要翻译：电源电路包括参考电位电路，升压电路和转换电路。参考电位电路产生参考电位。升压电路通过增加电源电位来产生所需的内部电位。升压电路包括比较电路，差分放大器电路和开关元件。比较电路输出电位和参考电位之间的比较结果。差分放大器电路由操作控制信号导通或关断。开关元件根据操作控制信号执行开/关控制，并且复位差分放大器电路的输出电位。转换电路将操作控制信号转换成使差分放大器电路的导通周期和开关元件的关闭周期变长。

4. 发明申请

US20100085114A1 HIGH-VOLTAGE GENERATION CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE PROVIDED THEREWITH AND SEMICONDUCTOR INTEGRATED DEVICE 审中-公开
标题翻译：高电压生成电路和半导体存储器件及其半导体集成器件
公开(公告)号：US20100085114A1
公开(公告)日：2010-04-08
申请号：US12564359
申请日：2009-09-22
申请人： Mario SAKO , Masaaki Kuwagata , Gyosho Chin
发明人： Mario SAKO , Masaaki Kuwagata , Gyosho Chin
IPC分类号： G05F1/10
CPC分类号： G11C5/145 , G11C8/08
摘要： A voltage generation circuit includes a pump circuit, a first unit, a first switch, and a first capacitor. The pump circuit generates a first voltage and outputs the first voltage to a first node. The first unit includes a first resistance unit to output a second voltage at a second node. The first switch connects the second node and an output terminal. A resistance value of a parasitic resistance formed in an interconnection from the second node to the output terminal is smaller than a resistance value of the first resistance unit. The first capacitor includes one of electrodes and the other electrodes. The one of electrodes is connected to an interconnection connecting the second node and the first switch element. The other of the electrodes is grounded. A capacitance of the first capacitor element is larger than a capacitance connected to the output terminal.
摘要翻译：电压产生电路包括泵电路，第一单元，第一开关和第一电容器。泵电路产生第一电压并将第一电压输出到第一节点。第一单元包括用于在第二节点处输出第二电压的第一电阻单元。第一个开关连接第二个节点和一个输出端子。在从第二节点到输出端子的互连中形成的寄生电阻的电阻值小于第一电阻单元的电阻值。第一电容器包括一个电极和另一个电极。电极中的一个连接到连接第二节点和第一开关元件的互连。另一个电极接地。第一电容器元件的电容大于连接到输出端子的电容。

5. 发明申请

US20090161464A1 SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：半导体存储器件
公开(公告)号：US20090161464A1
公开(公告)日：2009-06-25
申请号：US12338041
申请日：2008-12-18
申请人： Tatsuro MIDORIKAWA , Yasuhiko Honda , Gyosho Chin
发明人： Tatsuro MIDORIKAWA , Yasuhiko Honda , Gyosho Chin
IPC分类号： G11C7/04
CPC分类号： G11C7/04 , G11C5/147 , G11C8/08 , G11C11/5642 , G11C16/28 , G11C16/30 , G11C2211/5621
摘要： A semiconductor memory device includes a memory cell array which includes a plurality of memory cells which are arrayed in a matrix at intersections between a plurality of word lines and a plurality of bit lines and a power supply circuit which includes a first band gap reference circuit which outputs a first output voltage, and a second band gap reference circuit which outputs a second output voltage having lower temperature characteristics than the first output voltage on a low temperature side, and generates a power supply voltage on the basis of the second output voltage at a time of a data write operation of the memory cells.
摘要翻译：半导体存储器件包括存储单元阵列，其包括在多个字线和多个位线之间的交叉处以矩阵排列的多个存储器单元，以及包括第一带隙基准电路的电源电路，输出第一输出电压和第二带隙基准电路，其在低温侧输出具有比第一输出电压低的温度特性的第二输出电压，并且基于第二输出电压在第二输出电压存储单元的数据写入操作的时间。

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