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1. 发明授权

US4839588A Method for the examination of electrically active impurities of semiconductor materials or structures and measuring arrangement for carrying out the method 失效
公开(公告)号：US4839588A
公开(公告)日：1989-06-13
申请号：US138195
申请日：1987-11-25
申请人： Wolfgang Jantsch , Gyorgy Ferenczi
发明人： Wolfgang Jantsch , Gyorgy Ferenczi
IPC分类号： G01N25/00 , G01N22/00 , H01L21/66
CPC分类号： G01N22/00
摘要： A method for the examination of electrically active impurities of semiconductor materials or semiconductor structures is disclosed. The method comprises the steps of providing a junction in a sample taken from the semiconductor to be tested, inserting the sample in a microwave field, providing a space charge layer in the junction by applying a reverse bias thereto, filling the electrically active defects of the space charge layer, and examining the thermal emission process proceeding to reach a thermal equilibrium state that occurs following the filling step by measuring the change of the microwave field that takes place due to changes in microwave absorption in the sample during the thermal emission process. The microwave field should be present at least during the examination of the transient microwave absorption. In a measuring arrangement for carrying out the method a sample (24) of the semiconductor comprises a junction, the sample is provided with a pair of electrical contacts, and the measuring arrangement comprises a biasing means (26) coupled to the contacts for reverse biasing the junction to provide a space charge layer therein, a means (26) for filling the electrically active defects in the layer during a predetermined period or periods, and transient detecting means (27) for detecting transient changes in the junction after termination of said periods. The arrangement further comprises a microwave generator (21), a microwave means (23) coupled to the generator which defines a microwave field, and the sample is arranged in the field of the microwave means with a contact coupled to ground. The transient detecting means (27) is a microwave detector arranged to detect transient changes in microwave absorption due to the changes in the junction.

2. 发明授权

US5406214A Method and apparatus for measuring minority carrier lifetime in semiconductor materials 失效
标题翻译：测量半导体材料中少数载流子寿命的方法和装置
公开(公告)号：US5406214A
公开(公告)日：1995-04-11
申请号：US808671
申请日：1991-12-16
申请人： Janos Boda , Gyorgy Ferenczi , Peter Horvath , Zoltan Mirk , Tibor Pavelka
发明人： Janos Boda , Gyorgy Ferenczi , Peter Horvath , Zoltan Mirk , Tibor Pavelka
IPC分类号： G01N22/00 , G01R31/265 , G01R31/26 , G01R27/06
CPC分类号： G01N22/00 , G01R31/2656
摘要： A contactless apparatus for measuring contaminants in a semiconductor specimen (24) includes a tunable microwave generator (26) coupled by a coaxial cable (36) to a tuned narrowband microstrip antenna (38) that defines a through hole (72). The antenna is placed in near field relationship to the specimen to direct microwave energy toward a first specimen surface (44). This proximity provides a substantially more powerful microwave field than prior art systems, and the specimen comprises an impedance termination for the microwave path that includes the microwave generator and antenna, thereby rendering system measurements substantially immune to mechanical vibration of the specimen. A pulsed laser (42) directs optical energy through the antenna through hole toward the first specimen surface (44). The optical energy generates minority carriers within the specimen that begin to recombine upon cessation of each pulse. Minority lifetime decay affects microwave energy reflecting from freed holes and electrons in the specimen, which energy is coupled from the antenna to a detector (46) and preferably a computer system (48) that controls the system and provides signal processing of the detector output.
摘要翻译：用于测量半导体样品（24）中的污染物的非接触式设备包括可调谐微波发生器（26），其通过同轴电缆（36）耦合到限定通孔（72）的调谐窄带微带天线（38）。将天线放置成与样品的近场关系，以将微波能量引向第一样品表面（44）。该接近度提供了比现有技术系统更强大的微波场，并且样本包括用于包括微波发生器和天线的微波路径的阻抗终端，从而使得系统测量基本上不受样本的机械振动的影响。脉冲激光器（42）将光能通过天线通孔朝向第一样品表面（44）引导。光能在样品中产生少量载体，在每个脉冲停止时开始复合。少数生命周期衰减影响从样品中释放的空穴和电子反射的微波能量，该能量从天线耦合到检测器（46），优选地控制系统并提供检测器输出的信号处理的计算机系统（48）。

3. 发明授权

US4995939A Method and apparatus for determining the layer thickness of semiconductor layer structures 失效
标题翻译：用于确定半导体层结构层厚度的方法和装置
公开(公告)号：US4995939A
公开(公告)日：1991-02-26
申请号：US301889
申请日：1989-02-08
申请人： Gyorgy Ferenczi , Katalin Erdelyi , Maria Somogyi , Janos Boda , Gyorgy Fule , Gabor Aszodi
发明人： Gyorgy Ferenczi , Katalin Erdelyi , Maria Somogyi , Janos Boda , Gyorgy Fule , Gabor Aszodi
IPC分类号： H01L21/306 , G01B7/06 , G01N27/42
CPC分类号： G01B7/06 , G01N27/42
摘要： In a process for determining the layer thickness of semiconductor layer structures, a sample of a multilayer semi-conductor (4) is placed in contact with an electrolyte (2) then subjected to anodic etching during which the depth of etching is determined by integration of the current. During etching, the sample (4) is also excited by an electric signal and the real component of the admittance and hence the conductance of the probe at the frequency of excitation is determined, the extreme values of this component are analyzed, and the values of the depth of etching corresponding to these extremes, which characterize the junctions between the layers of the sample (4) tested, are determined. The installation for implementing the procedure contains a cell (1) filled with electrolyte (2) in which is immersed a graphite electrode (5), a saturated calomel electrode (6), and a platinum electrode (7) surrounding the surface of the sample (4) subjected to etching, electrodes (8,9) neither of which touch the surface of the sample (4) subjected to etching, a potentiostat (13) which is connected to the calomel electrode (6) and the direct current source (12), the current integrator (14), which receives the etching current intensity signal, a generator (15) which emits a periodic signal between the sample (14) and the metal electrode, and the measurement element (16) for measuring the conductance of the sample (4).
摘要翻译： PCT No.PCT / HU88 / 00030 Sec。 371日期：1989年2月8日 102（e）日期1989年2月8日PCT提交1988年5月4日PCT公布。第WO88 / 09053号公报日期：1988年11月17日。在确定半导体层结构的层厚度的方法中，将多层半导体（4）的样品放置成与电解质（2）接触，然后进行阳极蚀刻，的蚀刻由电流的积分确定。在蚀刻期间，样品（4）也被电信号激发，确定激励频率下的导纳的实际分量，从而确定探针的电导，分析该分量的极值，确定对应于这些极限的蚀刻深度，其表征测试的样品（4）的层之间的结。用于实施该方法的装置包含一个填充有电解质（2）的电池（1），其中浸入石墨电极（5），饱和甘汞电极（6）和围绕该样品表面的铂电极（7）（4）进行蚀刻，两者都不接触经受蚀刻的样品（4）的表面的电极（8,9），与甘汞电极（6）和直流电源（6）连接的恒电位仪（13） 12），接收蚀刻电流强度信号的电流积分器（14），在样品（14）和金属电极之间发射周期性信号的发生器（15）和用于测量电导率的测量元件（16）的样品（4）。

4. 发明授权

US5580828A Method for chemical surface passivation for in-situ bulk lifetime measurement of silicon semiconductor material 失效
标题翻译：硅半导体材料的原位体寿命测量的化学表面钝化方法
公开(公告)号：US5580828A
公开(公告)日：1996-12-03
申请号：US991126
申请日：1992-12-16
申请人： Gyorgy Ferenczi , Tamas Horanyi
发明人： Gyorgy Ferenczi , Tamas Horanyi
IPC分类号： G01N22/00 , H01L21/314 , H01L21/66 , H01L21/302
CPC分类号： H01L21/314 , G01N22/00 , H01L22/14
摘要： Minority carrier bulk lifetime maps are accomplished using in-situ .mu.-PCD measurement techniques on a non-oxidized Si specimen of either polarity. Surface passivation of the specimen is accomplished chemically, preferably using a solution of iodine in ethanol with a concentration in the range of about 0.02 mol.multidot.dm.sup.-3 to about 0.2 mol.multidot.dm.sup.-3. For n-type specimens, a solution of concentrated alkaline such as ammonia, sodium- and potassium-hydroxide is especially effective. For either type specimens, a solution of HF at about 40% m/m is also effective. Surface passivation according to the present invention reduces surface recombination velocities to 10 cm/second or less. The specimen to be measured is placed in a container of passivation solution such that the specimen surfaces are covered with a solution film of about 1 mm or less. The container preferably is transparent to microwave and laser optical energy, and passivation and measurement can occur simultaneously. A method and apparatus are disclosed.
摘要翻译：少数载体体积寿命图是使用任意极性的非氧化Si样品上的原位μ-PCD测量技术完成的。样品的表面钝化是化学完成的，优选使用浓度在约0.02mol / dm 3至约0.2mol / dm 3范围内的碘在乙醇中的溶液。对于n型样品，浓缩碱如氨，氢氧化钠和氢氧化钾的溶液是特别有效的。对于任一种类型的试样，约40％m / m 2的HF溶液也是有效的。根据本发明的表面钝化将表面复合速度降低到10cm /秒以下。将待测量的样品放置在钝化溶液的容器中，使得样品表面被约1mm或更小的溶液膜覆盖。容器优选对微波和激光光能是透明的，并且钝化和测量可以同时发生。公开了一种方法和装置。

5. 发明授权

US4437060A Method for deep level transient spectroscopy scanning and apparatus for carrying out the method 失效
标题翻译：深层瞬态光谱扫描方法及其实施方法
公开(公告)号：US4437060A
公开(公告)日：1984-03-13
申请号：US269903
申请日：1981-06-03
申请人： Gyorgy Ferenczi , Peter Horvath , Ferenc Toth , Jozsef Kiss , Janos Boda
发明人： Gyorgy Ferenczi , Peter Horvath , Ferenc Toth , Jozsef Kiss , Janos Boda
IPC分类号： G01R31/26 , H01L21/66
CPC分类号： G01R31/2637 , G01R31/2632
摘要： A Deep Level Transient Spectroscopy (DLTS) method in which a high frequency measuring signal is applied continuously on a semiconductor junction, and exciting pulses are generated which are coupled through fast semiconductor switching elements to the junction to alternatively bias the junction in reverse and forward (or slightly reverse) directions. The high frequency measuring signal passed through the junction is evaluated by means of a lock-in amplifier phase-locked with a constant phase angle, independent of the repetition rate of the exciting pulses.The evaluation circuits of the apparatus including the lock-in amplifier are controlled by switching elements driven by control signals generated from the exciting pulses.
摘要翻译：深度级瞬态光谱（DLTS）方法，其中高频测量信号连续地施加在半导体结上，并且产生激发脉冲，其通过快速半导体开关元件耦合到该结以交替地反向和向前偏置接合或稍微反向）方向。通过结的高频测量信号通过锁相放大器进行评估，锁相放大器以恒定的相位角，与激励脉冲的重复频率无关。包括锁定放大器的装置的评估电路由通过从激励脉冲产生的控制信号驱动的开关元件来控制。

6. 发明授权

US4571541A Method for determining charged energy states of semiconductor or insulator materials by using deep level transient spectroscopy, and an apparatus for carrying out the method 失效
标题翻译：通过使用深层瞬态光谱法确定半导体或绝缘体材料的带电能态的方法，以及用于执行该方法的装置
公开(公告)号：US4571541A
公开(公告)日：1986-02-18
申请号：US439226
申请日：1982-11-04
申请人： Gyorgy Ferenczi , Janos Boda , Ferenc Toth , Peter Horvath , Laszlo Benkovics , Laszlo Dozsa
发明人： Gyorgy Ferenczi , Janos Boda , Ferenc Toth , Peter Horvath , Laszlo Benkovics , Laszlo Dozsa
IPC分类号： G01N27/00 , G01R31/26 , G01R31/28 , H01L21/66
CPC分类号： G01R31/2831
摘要： A method for determining charged energy states of a sample of a semiconductor or insulator material by using deep level transient spectroscopy. The method includes the steps of exciting the sample by application of periodical exciting pulses to change the initial charge state, detecting the transient response of the sample when it returns to the thermodynamical balance condition following the termination of each of the excitation pulses, blocking the detection during a blocking period defined as the combined existence of the exciting pulses and of a dead period including the recovery period of the means used for the detection, performing a weighted integration operation on a detected response signal by the application of a symmetrical square wave synchronizing pulse as a weighting function synchronized to the frequency of said exciting pulses, blocking the detection in each of said detecting periods for the duration of a further blocking period which begins in a moment defined between the starting moments of the two exciting pulses immediately preceding and following said detecting period and synchronizing the synchronizing pulses to terminating moments of said dead periods to have a period time which is equal to the period time of said periodical exciting pulses. Apparatus for carrying out the method is also disclosed.
摘要翻译：一种通过使用深层瞬态光谱法确定半导体或绝缘体材料样品的带电能态的方法。该方法包括以下步骤：通过施加周期激励脉冲来激发样品以改变初始电荷状态，当样品在每个激发脉冲终止后返回到热力学平衡条件时检测样品的瞬态响应，阻止检测在被定义为激励脉冲的组合存在和包括用于检测的装置的恢复周期的死区的阻塞期间中，通过应用对称的方波同步脉冲对检测到的响应信号执行加权积分运算作为与所述激励脉冲的频率同步的加权函数，在每个所述检测周期内阻止在另一阻塞周期的持续时间内的检测，该进一步的阻塞周期从紧接在所述激励脉冲之前和之后的两个激励脉冲的起始时刻之间限定的时刻开始检测周期并同步同步pu 导致所述死区的终止时刻具有等于所述周期激励脉冲的周期时间的周期时间。还公开了用于执行该方法的装置。

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