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1. 发明授权

US10984993B2 Plasma processing apparatus 有权
公开(公告)号：US10984993B2
公开(公告)日：2021-04-20
申请号：US13876133
申请日：2010-12-22
申请人： Peng Chen , Mengxin Zhao , Gang Wei , Liang Zhang , Bai Yang , Guilong Wu , Peijun Ding
发明人： Peng Chen , Mengxin Zhao , Gang Wei , Liang Zhang , Bai Yang , Guilong Wu , Peijun Ding
IPC分类号： H01J37/34 , H01J37/32 , C23C14/50 , C23C14/35
摘要： A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

2. 发明申请

US20130256129A1 PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：等离子体加工设备
公开(公告)号：US20130256129A1
公开(公告)日：2013-10-03
申请号：US13876133
申请日：2010-12-22
申请人： Peng Chen , Mengxin Zhao , Gang Wei , Liang Zhang , Bai Yang , Guilong Wu , Peijun Ding
发明人： Peng Chen , Mengxin Zhao , Gang Wei , Liang Zhang , Bai Yang , Guilong Wu , Peijun Ding
IPC分类号： C23C14/35
摘要： A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.
摘要翻译：等离子体处理装置包括在室（20）上方的室（20）和目标（25）。靶（25）的表面与腔室（20）的处理区域接触。所述腔室（20）包括叠置的绝缘子室（21）和第一导电子室（22）。第一导电子室（22）设置在绝缘子室（21）的下方。绝缘子室（21）由绝缘材料制成，第一导电子室（22）由金属材料制成。在绝缘子室（21）中设置由金属材料制成的法拉第屏蔽部件（10）或电镀有导电涂层并且包括至少一个狭缝的绝缘材料。电感线圈（13）围绕绝缘子室（21）的外部。通过使用等离子体处理装置可以解决由于在溅射过程中在线圈表面上形成的颗粒导致的晶片污染的问题。

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