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1. 发明授权

US09954051B2 Structure and method of fabricating three-dimensional (3D) metal-insulator-metal (MIM) capacitor and resistor in semi-additive plating metal wiring 有权
公开(公告)号：US09954051B2
公开(公告)日：2018-04-24
申请号：US15288594
申请日：2016-10-07
申请人： Guan Huei See , Chin Hock Toh , Glen T. Mori , Arvind Sundarrajan
发明人： Guan Huei See , Chin Hock Toh , Glen T. Mori , Arvind Sundarrajan
IPC分类号： H01L21/768 , H01L21/02 , H01L23/522 , H01L23/532 , H01L49/02 , H01L21/311 , H01L21/3213
CPC分类号： H01L28/60 , H01L21/0217 , H01L21/02181 , H01L21/02183 , H01L21/31105 , H01L21/31127 , H01L21/32133 , H01L21/76802 , H01L21/76831 , H01L21/76846 , H01L21/76877 , H01L23/5223 , H01L23/5228 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L28/20
摘要： Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a first metal layer formed atop the polymer dielectric layer; depositing a polymer layer atop the substrate; patterning the polymer layer to form a plurality of openings, wherein the plurality of openings comprises a first opening formed proximate the metal pad; depositing a first barrier layer atop the polymer layer; depositing a dielectric layer atop the first barrier layer; etching the dielectric layer and the first barrier layer from within the first opening and a field region of the polymer layer; depositing a second barrier layer atop the substrate; depositing a second metal layer atop the substrate wherein the second metal layer fills the plurality of openings; and etching the second metal layer from a portion of the field region of the polymer layer.

2. 发明授权

US06933025B2 Chamber having components with textured surfaces and method of manufacture 失效
标题翻译：具有纹理表面的部件和制造方法的腔室
公开(公告)号：US06933025B2
公开(公告)日：2005-08-23
申请号：US10807750
申请日：2004-03-24
申请人： Shyh-Nung Lin , Mark D. Menzie , Joe F. Sommers , Daniel Owen Clawson , Glen T. Mori , Lolita L. Sharp
发明人： Shyh-Nung Lin , Mark D. Menzie , Joe F. Sommers , Daniel Owen Clawson , Glen T. Mori , Lolita L. Sharp
IPC分类号： H05H1/46 , B01J19/08 , C04B41/87 , C23C16/44 , C23F4/00 , H01J37/32 , H01L21/3065 , H05H1/32 , H05H1/42 , B32B1/08 , B32B17/06 , C23C14/00 , C23C16/00 , H01L21/306
CPC分类号： H01J37/32871 , H01J37/32458 , Y10S156/914 , Y10S156/916 , Y10T428/131 , Y10T428/1317
摘要： A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.
摘要翻译：用于基板处理室的部件具有由氧化铝构成的结构。该结构具有粗糙度平均为约150至约450微英寸的粗糙表面。氧化铝的等离子喷涂陶瓷涂层沉积在结构的粗糙表面上。组件可以是室的圆顶形天花板。

3. 发明授权

US06428663B1 Preventing defect generation from targets through applying metal spray coatings on sidewalls 有权
标题翻译：通过在侧壁上施加金属喷涂来防止目标产生缺陷
公开(公告)号：US06428663B1
公开(公告)日：2002-08-06
申请号：US09609127
申请日：2000-07-03
申请人： Roman Mostovoy , Glen T. Mori
发明人： Roman Mostovoy , Glen T. Mori
IPC分类号： C23C1434
CPC分类号： C23C4/00 , C23C14/3414 , C23C14/564
摘要： A coating layer is applied to a semiconductor device fabrication equipment, specifically, to a sidesurface of an inventive target. Characteristics of the coating layer promote adhesion of sputtered particles which may accumulate on the deposition equipment surface. The coating layer therefore reduces the probability that sputtered particles will flake or crumble from the equipment and contaminate a substrate being processed therein.
摘要翻译：将涂层施加到半导体器件制造设备，具体地，应用于本发明目标的侧面。涂层的特征促进了可能积聚在沉积设备表面上的溅射颗粒的粘附。因此，涂层减少了溅射的颗粒将从设备中剥落或破碎并污染正在处理的基板的可能性。

4. 发明授权

US06416634B1 Method and apparatus for reducing target arcing during sputter deposition 有权
标题翻译：用于在溅射沉积期间减少靶电弧的方法和装置
公开(公告)号：US06416634B1
公开(公告)日：2002-07-09
申请号：US09543770
申请日：2000-04-05
申请人： Roman Mostovoy , Glen T. Mori
发明人： Roman Mostovoy , Glen T. Mori
IPC分类号： C23C1434
CPC分类号： F16J15/062 , C23C14/34
摘要： A sealing surface of a sputter deposition chamber is provided with a groove adapted to receive a sealing member. The groove comprises an inner wall having a plurality of restrictive openings configured to restrict the flow of gas from the groove through the plurality of restrictive openings so as to reduce target arcing during a plasma process within the sputter deposition chamber. A method also is provided for reducing defect formation during plasma processing. The method comprises providing a sputter deposition chamber having at least one sealing surface; and restricting the flow of gas from the at least one sealing surface into the sputter deposition chamber so as to reduce target arcing during sputter deposition within the sputter deposition chamber.
摘要翻译：溅射沉积室的密封表面设置有适于容纳密封构件的凹槽。凹槽包括具有多个限制开口的内壁，所述多个限制开口被构造成限制来自槽的气体流通过多个限制开口，以便在溅射沉积室内的等离子体处理期间减少目标电弧。还提供了一种用于减少等离子体处理期间的缺陷形成的方法。该方法包括提供具有至少一个密封表面的溅射沉积室; 并且限制气体从至少一个密封表面流入溅射沉积室，以便在溅射沉积室内的溅射沉积期间减少目标电弧。

5. 发明授权

US06379428B1 Method for reducing particle concentration within a semiconductor device fabrication tool 失效
标题翻译：降低半导体器件制造工具内的粒子浓度的方法
公开(公告)号：US06379428B1
公开(公告)日：2002-04-30
申请号：US09501697
申请日：2000-02-10
申请人： Roman Mostovoy , Glen T. Mori
发明人： Roman Mostovoy , Glen T. Mori
IPC分类号： B03C382
CPC分类号： H01L21/67167 , B08B15/02 , H01L21/67017 , Y10S55/18
摘要： A method is provided for reducing the number of particles within a chamber of a fabrication tool located within a gray area of a clean room. A portable clean room station is provided that is capable of producing a white environment having fewer particles than the gray environment. The portable clean room station is positioned so that the chamber is exposed to the white environment of the portable clean room station rather than to the gray environment when the chamber is opened within the gray area. The white environment, which has fewer particles than the gray environment, is produced by employing the portable clean room station, and the chamber is then opened. Thereafter maintenance is performed on the opened chamber. Preferably the white environment is selected so as to have at least two orders of magnitude fewer particles per cubic foot than the gray environment.
摘要翻译：提供了一种用于减少位于洁净室的灰色区域内的制造工具的腔室内的颗粒数量的方法。提供了能够产生比灰色环境更少的颗粒的白色环境的便携式洁净室站。便携式洁净室站被定位成使得当室在灰色区域内打开时，室暴露于便携式洁净室站的白色环境而不是灰色环境。通过使用便携式洁净室站产生比灰色环境更少的颗粒的白色环境，然后打开室。此后，在打开的室上进行维护。优选地，白色环境被选择为与灰色环境相比，每立方英尺具有至少两个数量级的颗粒。

6. 发明申请

US20170104056A1 STRUCTURE AND METHOD OF FABRICATING THREE-DIMENSIONAL (3D) METAL-INSULATOR-METAL (MIM) CAPACITOR AND RESISTOR IN SEMI-ADDITIVE PLATING METAL WIRING 有权
公开(公告)号：US20170104056A1
公开(公告)日：2017-04-13
申请号：US15288594
申请日：2016-10-07
申请人： Guan Huei SEE , Chin Hock TOH , Glen T. MORI , Arvind SUNDARRAJAN
发明人： Guan Huei SEE , Chin Hock TOH , Glen T. MORI , Arvind SUNDARRAJAN
IPC分类号： H01L49/02 , H01L21/768 , H01L21/02 , H01L23/522 , H01L23/532 , H01L21/311 , H01L21/3213
CPC分类号： H01L28/60 , H01L21/0217 , H01L21/02181 , H01L21/02183 , H01L21/31105 , H01L21/31127 , H01L21/32133 , H01L21/76802 , H01L21/76831 , H01L21/76846 , H01L21/76877 , H01L23/5223 , H01L23/5228 , H01L23/53223 , H01L23/53238 , H01L23/5329 , H01L28/20
摘要： Methods of processing a substrate include: providing a substrate having a polymer dielectric layer, a metal pad formed within the polymer dielectric layer and a first metal layer formed atop the polymer dielectric layer; depositing a polymer layer atop the substrate; patterning the polymer layer to form a plurality of openings, wherein the plurality of openings comprises a first opening formed proximate the metal pad; depositing a first barrier layer atop the polymer layer; depositing a dielectric layer atop the first barrier layer; etching the dielectric layer and the first barrier layer from within the first opening and a field region of the polymer layer; depositing a second barrier layer atop the substrate; depositing a second metal layer atop the substrate wherein the second metal layer fills the plurality of openings; and etching the second metal layer from a portion of the field region of the polymer layer.

7. 发明授权

US06777045B2 Chamber components having textured surfaces and method of manufacture 有权
标题翻译：具有纹理表面的腔室部件和制造方法
公开(公告)号：US06777045B2
公开(公告)日：2004-08-17
申请号：US09895862
申请日：2001-06-27
申请人： Shyh-Nung Lin , Mark D. Menzie , Joe F. Sommers , Daniel Owen Clawson , Glen T. Mori , Lolita L. Sharp
发明人： Shyh-Nung Lin , Mark D. Menzie , Joe F. Sommers , Daniel Owen Clawson , Glen T. Mori , Lolita L. Sharp
IPC分类号： B32B108
CPC分类号： H01J37/32871 , H01J37/32458 , Y10S156/914 , Y10S156/916 , Y10T428/131 , Y10T428/1317
摘要： A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.
摘要翻译：用于等离子体处理室的圆顶形外壳由具有粗糙度平均为约150至约450微英寸的粗糙表面的电介质材料制成。将等离子体喷涂的陶瓷涂层施加在电介质材料的粗糙表面上。等离子喷涂涂层包括具有平均偏度为负值的粗糙度的纹理表面。当在等离子体处理室中使用封闭壁时，由等离子体处理室中形成的等离子体产生的溅射材料对纹理化表面具有良好的粘附性。

8. 发明授权

US6116032A Method for reducing particulate generation from regeneration of cryogenic vacuum pumps 失效
标题翻译：减少低温真空泵再生产生颗粒物的方法
公开(公告)号：US6116032A
公开(公告)日：2000-09-12
申请号：US229143
申请日：1999-01-12
申请人： Glen T. Mori , Daniel O. Clawson
发明人： Glen T. Mori , Daniel O. Clawson
IPC分类号： F04B37/08 , B01D8/00
CPC分类号： F04B37/085
摘要： A method for reducing particulate generation from regeneration of cryogenic vacuum pumps. The method comprises controlling a pressure ramp rate inside the cryopump during an initial introduction of a regeneration gas into the cryopump. Preferably, the pressure ramp rate is controlled by maintaining a first pressure ramp rate, preferably between about 0.03 T/s and 0.15 T/s, until a first pressure of about 0.3 T is reached inside the cryopump and maintaining a second pressure ramp rate between about 1 T/s and 5 T/s until the surface in the cryopump reaches an intermediate temperature between about 40 K and 100 K. Preferably, the temperature ramp rate is also controlled by heating the surface at a temperature ramp rate between about 0.1 K/s and about 0.5 K/s until the intermediate temperature has been reached. Preferably, the temperature ramp rate is controlled by regulating the flow of an inert gas into the cryopump using a flow restriction device. Alternatively, the second stage cryoarray temperature is increased at the rate of between 0.1 K/s and 0.5 K/s using a PID controlled heater.
摘要翻译：一种减少低温真空泵再生产生颗粒的方法。该方法包括在将再生气体初始引入低温泵中时控制低温泵内的压力升高速率。优选地，通过保持第一压力升高速率，优选在约0.03T / s至0.15T / s之间，直到在低温泵内部达到约0.3T的第一压力并且保持第二压力升高速率约1T / s和5T / s，直到低温泵中的表面达到约40K和100K之间的中间温度。优选地，温度升高速率也通过在约0.1K / s和约0.5K / s，直到达到中间温度。优选地，通过使用流量限制装置调节惰性气体进入低温泵的流量来控制温度升高速率。或者，使用PID控制的加热器，以0.1K / s至0.5K / s的速率增加第二级冷冻套管温度。

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