专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07427894B2 Dual-mode, dual-load high efficiency RF power amplifier 有权
公开(公告)号：US07427894B2
公开(公告)日：2008-09-23
申请号：US11634060
申请日：2006-12-06
申请人： Gee Samuel Dow , Chien-Lung Ho
发明人： Gee Samuel Dow , Chien-Lung Ho
IPC分类号： H03F1/14 , H03G3/20
CPC分类号： H03F3/193 , H03F1/0205 , H03F1/0277 , H03F1/56 , H03F3/72 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03F2203/7233 , H03F2203/7239 , H03H7/38
摘要： A radio frequency (RF) amplifier has a driver device, an output device, and first and second impedance transformation networks. In a first operating mode the output device is turned on and the first impedance transformation network presents a first load impedance to the output device. In a second operating mode, the output device is turned off and the second impedance transformation network connects an output of the driver device to the first impedance transformation network and presents a second load impedance to the driver device. The second load impedance is greater than the first load impedance.

2. 发明申请

US20080136512A1 Dual-mode, dual-load high efficiency RF power amplifier 有权
标题翻译：双模，双负载高效RF功率放大器
公开(公告)号：US20080136512A1
公开(公告)日：2008-06-12
申请号：US11634060
申请日：2006-12-06
申请人： Gee Samuel Dow , Chien-Lung Ho
发明人： Gee Samuel Dow , Chien-Lung Ho
IPC分类号： H03F1/14
CPC分类号： H03F3/193 , H03F1/0205 , H03F1/0277 , H03F1/56 , H03F3/72 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03F2203/7233 , H03F2203/7239 , H03H7/38
摘要： A radio frequency (RF) amplifier has a driver device, an output device, and first and second impedance transformation networks. In a first operating mode the output device is turned on and the first impedance transformation network presents a first load impedance to the output device. In a second operating mode, the output device is turned off and the second impedance transformation network connects an output of the driver device to the first impedance transformation network and presents a second load impedance to the driver device. The second load impedance is greater than the first load impedance.
摘要翻译：射频（RF）放大器具有驱动器装置，输出装置以及第一和第二阻抗变换网络。在第一操作模式中，输出装置被接通并且第一阻抗变换网络向输出装置呈现第一负载阻抗。在第二操作模式中，输出设备被关闭，第二阻抗变换网络将驱动器设备的输出连接到第一阻抗变换网络，并向驱动器设备呈现第二负载阻抗。第二个负载阻抗大于第一个负载阻抗。

3. 发明授权

US6052024A Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems 失效
标题翻译：用于无源微波/毫米波辐射成像系统的单片，低噪声，同步直接检测接收器
公开(公告)号：US6052024A
公开(公告)日：2000-04-18
申请号：US947525
申请日：1997-08-26
申请人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
发明人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
IPC分类号： H03F3/38 , H03D1/10 , H03F3/60 , H03F3/72 , H04B1/18 , H04B1/30 , H03F3/68
CPC分类号： H04B1/30 , H03D1/10 , H03F3/602 , H03F3/72 , H03F2200/198 , H03F2200/294 , H03F2200/372
摘要： A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.
摘要翻译：一种用于无源微波和毫米波辐射成像系统的直接检测接收器。接收机包括平衡开关低噪声放大器（BSLNA）。在BSLNA之前插入前端低噪声放大器（LNA），以实现低噪声系数，并提供足够的增益，以最大限度地减少输入噪声系数由于BSLNA的损耗而退化。高电子迁移率晶体管（HEMT）二极管用作功率检测器。前端放大器，BSLNA和二极管是工艺兼容的单片集成。

4. 发明授权

US07443236B2 CDMA power amplifier design for low and high power modes 有权
标题翻译： CDMA功率放大器设计用于低功耗和高功率模式
公开(公告)号：US07443236B2
公开(公告)日：2008-10-28
申请号：US11784541
申请日：2007-04-06
申请人： Gee Samuel Dow , Jianwen Bao , Chun-Wen Paul Huang
发明人： Gee Samuel Dow , Jianwen Bao , Chun-Wen Paul Huang
IPC分类号： H03F1/14
CPC分类号： H03F1/30 , H03F1/14 , H03F1/3241 , H03F1/56 , H03F3/189 , H03F3/191 , H03F3/60 , H03F2200/318 , H03F2200/411 , H03F2200/75
摘要： An amplifier circuit responsive to a power mode signal improves efficiency at low power levels without compromising efficiency at high power levels. At low power levels, high impedance is presented with suitable adjustment in the phase of the signal. Also, providing for predistortion linearization improves high power efficiency and switching the predistortion linearizer OFF at low power levels contributes little more than a small insertion loss. The power amplifier also uses a bias circuit incorporating a dual harmonic resonance filter to provide high impedance at a fundamental frequency and low impedance at a second harmonic. These properties are of particularly advantageous since amplifiers in cell-phones are used in low power modes most of the time although they are designed to be most efficient at primarily the highest power levels.
摘要翻译：响应于功率模式信号的放大器电路在低功率水平下提高效率，而不会在高功率水平下降低效率。在低功率电平下，在信号的相位中适当调整高阻抗。此外，提供预失真线性化提高了高功率效率，并且在低功率电平下切换预失真线性化器关闭仅仅贡献小于小的插入损耗。功率放大器还使用包含双谐波谐振滤波器的偏置电路，以在基频处提供高阻抗，在二次谐波下提供低阻抗。这些特性是特别有利的，因为手机中的放大器大部分时间都以低功率模式使用，尽管它们被设计为在主要最高功率水平下是最有效的。

5. 发明授权

US07439806B2 Bias control circuit and method of controlling bias of RF power amplifier 失效
标题翻译：偏置控制电路和RF功率放大器偏置控制方法
公开(公告)号：US07439806B2
公开(公告)日：2008-10-21
申请号：US11710942
申请日：2007-02-27
申请人： Gee Samuel Dow
发明人： Gee Samuel Dow
IPC分类号： H03G3/10
CPC分类号： H03F1/0261 , H03F1/0277 , H03F3/19 , H03F2200/108 , H03F2200/18 , H03F2200/181 , H03F2200/27 , H03F2200/318 , H03F2200/408 , H03F2200/451
摘要： A bias control circuit for an RF amplifier having an output device for providing an output signal to a load and a driver device for driving the output device includes a current mirror circuit for providing a driver device bias current to the driver device and an output device bias current to the output device. When the amplifier operates in a high power mode, the current mirror circuit supplies the driver device bias current at a level to turn on the driver device at a high current level and an output device bias current to turn on the output device. When the amplifier operates in a low power mode, the current mirror circuit supplies a driver device bias current to turn on the driver device at a reduced current level and an output device bias current to turn off the output device.
摘要翻译：一种用于具有用于向负载提供输出信号的输出装置和用于驱动输出装置的驱动装置的RF放大器的偏置控制电路包括用于向驱动器装置提供驱动器装置偏置电流的电流镜电路和输出装置偏置电流到输出设备。当放大器工作在高功率模式时，电流镜像电路将驱动器器件的偏置电流提供在一个电平上，使驱动器器件处于高电流电平，并输出器件偏置电流以使输出器件导通。当放大器工作在低功率模式时，电流镜电路提供驱动器器件偏置电流，以降低电流电平打开驱动器器件，并输出器件偏置电流以关闭输出器件。

6. 发明授权

US06806767B2 Power amplifier with load switching circuit 有权
标题翻译：功率放大器，负载开关电路
公开(公告)号：US06806767B2
公开(公告)日：2004-10-19
申请号：US10190567
申请日：2002-07-09
申请人： Gee Samuel Dow
发明人： Gee Samuel Dow
IPC分类号： H03F114
CPC分类号： H03F1/30 , H03F1/14 , H03F1/3241 , H03F1/56 , H03F3/189 , H03F3/191 , H03F3/60 , H03F2200/318 , H03F2200/411 , H03F2200/75
摘要： A power amplifier circuit includes a power amplifier responsive to a power mode signal, the power amplifier having a power amplifier output node, and a power amplifier load circuit also responsive to the power mode signal, the power amplifier load circuit having a load circuit input node connected to the power amplifier output node. The power amplifier load circuit has a first transmission line coupled between the load circuit input node and a first node, a harmonic filter coupled between the load circuit input node and a common node, a first capacitor coupled between the first node and the common node, and a first switch coupled between the common node and ground, where the first switch is responsive to the power mode signal.
摘要翻译：功率放大器电路包括响应于功率模式信号的功率放大器，具有功率放大器输出节点的功率放大器和还响应于功率模式信号的功率放大器负载电路，功率放大器负载电路具有负载电路输入节点连接到功率放大器输出节点。功率放大器负载电路具有耦合在负载电路输入节点和第一节点之间的第一传输线，耦合在负载电路输入节点和公共节点之间的谐波滤波器，耦合在第一节点和公共节点之间的第一电容器，以及耦合在公共节点和地之间的第一开关，其中第一开关响应于功率模式信号。

7. 发明授权

US07202736B1 CDMA power amplifier design for low and high power modes 有权
标题翻译： CDMA功率放大器设计用于低功耗和高功率模式
公开(公告)号：US07202736B1
公开(公告)日：2007-04-10
申请号：US10807764
申请日：2004-03-23
申请人： Gee Samuel Dow , Jianwen Bao , Chun-Wen Paul Huang
发明人： Gee Samuel Dow , Jianwen Bao , Chun-Wen Paul Huang
IPC分类号： H03G3/20 , H03F1/14
CPC分类号： H03F1/30 , H03F1/14 , H03F1/3241 , H03F1/56 , H03F3/189 , H03F3/191 , H03F3/60 , H03F2200/318 , H03F2200/411 , H03F2200/75
摘要： An amplifier circuit responsive to a power mode signal improves efficiency at low power levels without compromising efficiency at high power levels. At low power levels, high impedance is presented with suitable adjustment in the phase of the signal. Also, providing for predistortion linearization improves high power efficiency and switching the predistortion linearizer OFF at low power levels contributes little more than a small insertion loss. The power amplifier also uses a bias circuit incorporating a dual harmonic resonance filter to provide high impedance at a fundamental frequency and low impedance at a second harmonic. These properties are of particularly advantageous since amplifiers in cell-phones are used in low power modes most of the time although they are designed to be most efficient at primarily the highest power levels.
摘要翻译：响应于功率模式信号的放大器电路在低功率水平下提高效率，而不会在高功率水平下降低效率。在低功率电平下，在信号的相位中适当调整高阻抗。此外，提供预失真线性化提高了高功率效率，并且在低功率电平下切换预失真线性化器关闭仅仅贡献小于小的插入损耗。功率放大器还使用包含双谐波谐振滤波器的偏置电路，以在基频处提供高阻抗，在二次谐波下提供低阻抗。这些特性是特别有利的，因为手机中的放大器大部分时间都以低功率模式使用，尽管它们被设计为在主要最高功率水平下是最有效的。

8. 发明申请

US20080204145A1 BIAS CONTROL CIRCUIT AND METHOD OF CONTROLLING BIAS OF RF POWER AMPLIFIER 失效
标题翻译：偏置控制电路和控制RF功率放大器偏置的方法
公开(公告)号：US20080204145A1
公开(公告)日：2008-08-28
申请号：US11710942
申请日：2007-02-27
申请人： Gee Samuel Dow
发明人： Gee Samuel Dow
IPC分类号： H03G3/10
CPC分类号： H03F1/0261 , H03F1/0277 , H03F3/19 , H03F2200/108 , H03F2200/18 , H03F2200/181 , H03F2200/27 , H03F2200/318 , H03F2200/408 , H03F2200/451
摘要： A bias control circuit for an RF amplifier having an output device for providing an output signal to a load and a driver device for driving the output device includes a current mirror circuit for providing a driver device bias current to the driver device and an output device bias current to the output device. When the amplifier operates in a high power mode, the current mirror circuit supplies the driver device bias current at a level to turn on the driver device at a high current level and an output device bias current to turn on the output device. When the amplifier operates in a low power mode, the current mirror circuit supplies a driver device bias current to turn on the driver device at a reduced current level and an output device bias current to turn off the output device.
摘要翻译：一种用于具有用于向负载提供输出信号的输出装置和用于驱动输出装置的驱动装置的RF放大器的偏置控制电路包括用于向驱动器装置提供驱动器装置偏置电流的电流镜电路和输出装置偏置电流到输出设备。当放大器工作在高功率模式时，电流镜像电路将驱动器器件的偏置电流提供在一个电平上，使驱动器器件处于高电流电平，并输出器件偏置电流以使输出器件导通。当放大器工作在低功率模式时，电流镜电路提供驱动器器件偏置电流，以降低电流电平打开驱动器器件，并输出器件偏置电流以关闭输出器件。

9. 发明授权

US5815113A Monolithic, low-noise, synchronous direct detection receiver for passive microwave/millimeter-wave radiometric imaging systems 失效
公开(公告)号：US5815113A
公开(公告)日：1998-09-29
申请号：US696451
申请日：1996-08-13
申请人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
发明人： Chung-Wen Dennis Lo , Barry R. Allen , Eric W. Lin , Gee Samuel Dow , Paul Shu Chung Lee
IPC分类号： H03F3/38 , H03D1/10 , H03F3/60 , H03F3/72 , H04B1/18 , H04B1/30 , G01S3/02
CPC分类号： H04B1/30 , H03D1/10 , H03F3/602 , H03F3/72 , H03F2200/198 , H03F2200/294 , H03F2200/372
摘要： A direct detection receiver for a passive microwave and millimeter wave radiometric imaging system. The receiver includes a balanced switch low-noise amplifier (BSLNA). A front-end, low-noise amplifier (LNA) is inserted before the BSLNA to achieve a low-noise figure, as well as provide sufficient gain to minimize the input noise figure degradation due to loss of the BSLNA. A high-electron mobility transistor (HEMT) diode is used as a power detector. The front-end amplifier, BSLNA and diode are process compatible for monolithic integration.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式