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1. 发明申请

US20080150637A1 Electronics parts for high frequency power amplifier 有权
公开(公告)号：US20080150637A1
公开(公告)日：2008-06-26
申请号：US12071203
申请日：2008-02-19
申请人： Kyoichi Takahashi , Takayuki Tsutsui , Hitoshi Akamine , Fuminori Morisawa , Nobuhiro Matsudaira
发明人： Kyoichi Takahashi , Takayuki Tsutsui , Hitoshi Akamine , Fuminori Morisawa , Nobuhiro Matsudaira
IPC分类号： H03G3/20 , H03G3/10
CPC分类号： H03F1/0261 , H03F1/0205 , H03F3/24 , H03F3/60 , H03F2200/105 , H03G3/3047
摘要： This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.

2. 发明授权

US06967535B2 High frequency power amplifier circuit 有权
标题翻译：高频功放电路
公开(公告)号：US06967535B2
公开(公告)日：2005-11-22
申请号：US11079113
申请日：2005-03-15
申请人： Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
发明人： Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
IPC分类号： H03F3/68 , H03F1/30 , H03F3/24 , H03G3/30 , H03G3/10
CPC分类号： H03G3/3042 , H03F1/301
摘要： A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.
摘要翻译：包括通过电阻分配器产生栅极偏置电压的偏置电路的模块产生一个问题，即构成偏置电路的电阻的值必须被微调，因此需要额外的修整任务。本发明提供电流发生器，其响应于控制电压而产生电流变化，而不管晶体管阈值电压的变化，将输出电阻连接到各级的并联晶体管，以形成电流镜电路，并将电流从电流发生器提供给驱动它们，而不是提供分压。

3. 发明授权

US07595694B2 Electronics parts for high frequency power amplifier 有权
标题翻译：电子部件用于高频功率放大器
公开(公告)号：US07595694B2
公开(公告)日：2009-09-29
申请号：US12071203
申请日：2008-02-19
申请人： Kyoichi Takahashi , Takayuki Tsutsui , Hitoshi Akamine , Fuminori Morisawa , Nobuhiro Matsudaira
发明人： Kyoichi Takahashi , Takayuki Tsutsui , Hitoshi Akamine , Fuminori Morisawa , Nobuhiro Matsudaira
IPC分类号： H03G3/30
CPC分类号： H03F1/0261 , H03F1/0205 , H03F3/24 , H03F3/60 , H03F2200/105 , H03G3/3047
摘要： This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.
摘要翻译：本发明提供了一种用于高频功率放大的电子部件（RF功率模块），其将在开始传输时自动执行预充电电平设置以用于正确的输出功率，而不需要预充电的软件处理在基带IC上运行，这可以减少用户负担，即手机厂商。配置为放大RF发射信号的这种电子部件包括：输出功率控制电路，其基于输出功率电平指令信号将输出功率控制电压提供给高频功率放大器电路中的偏置控制电路。该电子部件配备有预充电电路，其提高输出功率控制电压以产生预定水平的输出功率，同时检测流过最后级功率放大元件的电流，由传输开始时的电源电压上升触发。

4. 发明申请

US20060192616A1 Electronics parts for high frequency power amplifier 有权
公开(公告)号：US20060192616A1
公开(公告)日：2006-08-31
申请号：US11360437
申请日：2006-02-24
申请人： Kyoichi Takahashi , Takayuki Tsutsui , Hitoshi Akamine , Fuminori Morisawa , Nobuhiro Matsudaira
发明人： Kyoichi Takahashi , Takayuki Tsutsui , Hitoshi Akamine , Fuminori Morisawa , Nobuhiro Matsudaira
IPC分类号： H03G3/20
CPC分类号： H03F1/0261 , H03F1/0205 , H03F3/24 , H03F3/60 , H03F2200/105 , H03G3/3047
摘要： This invention provides an electronic part for high frequency power amplification (RF power module) which will automatically perform the precharge level setting for proper output power at start of transmission without requiring the software process for precharging to run on the baseband IC, which can reduce the burden on users, namely, mobile phone manufacturers. Such electronic part configured to amplify RF transmit signals includes an output power control circuit which supplies an output power control voltage to a bias control circuit in a high frequency power amplifier circuit, based on an output power level directive signal. This electronic part is equipped with a precharge circuit which raises the output power control voltage to produce a predetermined level of output power, while detecting a current flowing through a final-stage power amplifying element, triggered by rise of a supply voltage at start of transmission.

5. 发明授权

US08471631B2 Bias circuit, power amplifier, and current mirror circuit 有权
标题翻译：偏置电路，功率放大器和电流镜电路
公开(公告)号：US08471631B2
公开(公告)日：2013-06-25
申请号：US13089454
申请日：2011-04-19
申请人： Satoshi Tanaka , Fuminori Morisawa , Makoto Tabei
发明人： Satoshi Tanaka , Fuminori Morisawa , Makoto Tabei
IPC分类号： H03F3/68
CPC分类号： H03F1/301 , G05F3/262 , H03F3/193 , H03F2200/18
摘要： There is provided a bias circuit that can operate even at low voltage and control a current reflecting a change in drain voltage. A first current mirror circuit for feeding back a drain terminal current of an FET which receives an output of an operational amplifier at a gate terminal to an input terminal of the operational amplifier and a second current mirror circuit are coupled in parallel. A variable voltage is coupled to the first current mirror circuit, and a fixed voltage is coupled to the second current mirror circuit. Even if the variable voltage becomes lower than the threshold voltage of FETs configuring the first current mirror circuit, the second current mirror circuit feeds back the current to the input terminal of the operational amplifier with reliability.
摘要翻译：提供了即使在低电压下也能够工作并且控制反映漏极电压变化的电流的偏置电路。用于将接收栅极端的运算放大器的输出的FET的漏极端子电流反馈到运算放大器的输入端的第一电流镜电路和第二电流镜电路并联。可变电压耦合到第一电流镜电路，并且固定电压耦合到第二电流镜电路。即使可变电压变得低于构成第一电流镜电路的FET的阈值电压，第二电流镜电路可靠地将电流反馈到运算放大器的输入端。

6. 发明授权

US08183925B2 High frequency power amplifier and operating method thereof 失效
标题翻译：高频功率放大器及其操作方法
公开(公告)号：US08183925B2
公开(公告)日：2012-05-22
申请号：US13029184
申请日：2011-02-17
申请人： Ikuma Ohta , Norio Hayashi , Takayuki Tsutsui , Fuminori Morisawa , Masatoshi Hase
发明人： Ikuma Ohta , Norio Hayashi , Takayuki Tsutsui , Fuminori Morisawa , Masatoshi Hase
IPC分类号： H03G3/10
CPC分类号： H03F3/45475 , H03F1/0266 , H03F1/301 , H03F1/56 , H03F3/195 , H03F3/245 , H03F2200/222 , H03F2200/27 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/447 , H03F2200/451 , H03F2200/453 , H03F2203/45528 , H03F2203/45594 , H03F2203/45604
摘要： A high-frequency power amplifier which can reduce a variation of power gain due to the dependence on gate length of a power amplification field effect transistor is provided. The high-frequency power amplifier comprises, over a semiconductor chip, a bias control circuit, a bias transistor and an amplification transistor which are coupled so as to configure a current mirror circuit, and a gate length monitor circuit comprising a replicating transistor. The amplification transistor amplifies an RF signal and a bias current of the bias control circuit is supplied to the bias transistor. The transistors are fabricated by the same semiconductor manufacturing process, and have the same variation of gate length. The gate length monitor circuit generates a detection voltage depending on the gate length. According to the detection voltage, the bias control circuit controls the bias current, thereby compensating the gate length dependence of transconductance of the amplification transistor.
摘要翻译：提供了一种能够减小由于与功率放大场效应晶体管的栅极长度相关的功率增益变化的高频功率放大器。高频功率放大器包括半导体芯片上的偏置控制电路，偏置晶体管和放大晶体管，这些偏置晶体管和放大晶体管被耦合以配置电流镜电路，以及包括复制晶体管的栅极长度监视电路。放大晶体管放大RF信号，偏置控制电路的偏置电流被提供给偏置晶体管。晶体管通过相同的半导体制造工艺制造，并且具有相同的栅极长度变化。栅极长度监视电路根据栅极长度产生检测电压。根据检测电压，偏置控制电路控制偏置电流，从而补偿放大晶体管的跨导的栅极长度依赖性。

7. 发明申请

US20060006944A1 High frequency power amplifier circuit 有权
公开(公告)号：US20060006944A1
公开(公告)日：2006-01-12
申请号：US11227160
申请日：2005-09-16
申请人： Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
发明人： Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
IPC分类号： H03G3/10
CPC分类号： H03G3/3042 , H03F1/301
摘要： A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.

8. 发明授权

US06756850B2 High frequency power amplifier circuit 有权
公开(公告)号：US06756850B2
公开(公告)日：2004-06-29
申请号：US10147065
申请日：2002-05-17
申请人： Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
发明人： Kouichi Matsushita , Tomio Furuya , Fuminori Morisawa , Takayuki Tsutsui , Nobuhiro Matsudaira
IPC分类号： H03G310
CPC分类号： H03G3/3042 , H03F1/301
摘要： A module including a bias circuit that generates gate bias voltages by resistance dividers creates a problem in that the values of the resistances constituting the bias circuit must be finely adjusted, and accordingly extra trimming tasks are required. The present invention provides current generators that generate currents varying with desired characteristics responsive to a control voltage, independent of variations in transistor threshold voltages, connects output resistors to parallel transistors in respective stages to form current mirror circuits, and supplies currents from the current generators thereto to drive them, instead of supplying dividing voltages.

9. 发明授权

US08519796B2 Bias generation circuit, power amplifier module, and semiconductor device 有权
标题翻译：偏置电路，功率放大器模块和半导体器件
公开(公告)号：US08519796B2
公开(公告)日：2013-08-27
申请号：US13383976
申请日：2009-09-30
申请人： Satoshi Tanaka , Fuminori Morisawa , Makoto Tabei
发明人： Satoshi Tanaka , Fuminori Morisawa , Makoto Tabei
IPC分类号： H03F3/04
CPC分类号： H03F1/301 , G05F3/262 , H03F3/345 , H03F2200/18
摘要： There is provided a bias circuit including a power amplifier in which influence of variation of a gate length L is reduced and variation of a gain among products is low. Two NPN- and PNP-type current mirror circuits 101 (NPN type) and 102 (PNP type) are inserted on an input side of a bias circuit 103. It is designed that a gate length of a transistor Q1 on an output side of the current mirror circuit 101 is longer than that of the other transistor. In this manner, even when an error is generated, influence of the error can be suppressed to be small.
摘要翻译：提供了一种偏置电路，包括功率放大器，其中栅极长度L的变化的影响减小，并且产品之间的增益的变化较低。在偏置电路103的输入侧插入两个NPN-和PNP型电流镜电路101（NPN型）和102（PNP型）。它被设计成：在输出侧的晶体管Q1的栅极长度电流镜电路101比另一晶体管长。以这种方式，即使产生错误，也可以将误差的影响抑制得较小。

10. 发明申请

US20120176198A1 BIAS GENERATION CIRCUIT, POWER AMPLIFIER MODULE, AND SEMICONDUCTOR DEVICE 有权
标题翻译：偏差电路，功率放大器模块和半导体器件
公开(公告)号：US20120176198A1
公开(公告)日：2012-07-12
申请号：US13383976
申请日：2009-09-30
申请人： Satoshi Tanaka , Fuminori Morisawa , Makoto Tabei
发明人： Satoshi Tanaka , Fuminori Morisawa , Makoto Tabei
IPC分类号： H03F3/21
CPC分类号： H03F1/301 , G05F3/262 , H03F3/345 , H03F2200/18
摘要： There is provided a bias circuit including a power amplifier in which influence of variation of a gate length L is reduced and variation of a gain among products is low. Two NPN- and PNP-type current mirror circuits 101 (NPN type) and 102 (PNP type) are inserted on an input side of a bias circuit 103. It is designed that a gate length of a transistor Q1 on an output side of the current mirror circuit 101 is longer than that of the other transistor. In this manner, even when an error is generated, influence of the error can be suppressed to be small.
摘要翻译：提供了一种偏置电路，包括功率放大器，其中栅极长度L的变化的影响减小，并且产品之间的增益的变化较低。在偏置电路103的输入侧插入两个NPN-和PNP型电流镜电路101（NPN型）和102（PNP型）。它被设计成：在输出侧的晶体管Q1的栅极长度电流镜电路101比另一晶体管长。以这种方式，即使产生错误，也可以将误差的影响抑制得较小。

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