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1. 发明授权

US5340981A Rear field reflection microscopy process and apparatus 失效
标题翻译：后场反射显微镜工艺及仪器
公开(公告)号：US5340981A
公开(公告)日：1994-08-23
申请号：US835980
申请日：1992-04-27
申请人： Frederique De Fornel , Jean-Pierre Goudonnet , Nathalie Cerre
发明人： Frederique De Fornel , Jean-Pierre Goudonnet , Nathalie Cerre
IPC分类号： G02B21/00 , G01Q60/18 , G03F7/20 , H01J5/16
CPC分类号： G01Q60/22 , B82Y20/00 , B82Y35/00 , G03F7/70383 , B82Y10/00 , Y10S977/862
摘要： Reflection microscopy process and apparatus for examining a surface which enable the injection of highly coherent electromagnetic wave, such as produced by a laser, in a waveguide whose outlet surface is flat and transparent, at least in the zone where propagation mode of the waveguide is emitted. The outlet surface is positioned above the surface to be examined at a chosen distance so that the coupling coefficient between the particular mode of propagation of waveguide and the propagation mode of the electric field of the wave reflected by the surface and guided in return by the waveguide, depends in an essentially exponential way on the distance or can be compared, at least locally, with an exponential variation function, or is rapidly decreasing, depending on the distance, and the surface is scanned with the waveguide. In particular, the field of the invention concerns scanning microscopy, by purely optical elements and with nanometric resolution. The invention can also be used for optical control of the distance between a given surface and an instrument to be moved above this surface, and, in particular, any instrument of the type used for microlithography of integrated circuits.
摘要翻译： PCT No.PCT / FR90 / 00632 Sec。 371日期：1992年4月27日 102（e）日期1992年4月27日PCT提交1990年8月27日PCT公布。公开号WO91 / 03757 日期1991年3月21日。用于检查表面的反射显微镜方法和装置，其使得能够在出口表面是平坦和透明的波导中注射高激光等高度相干的电磁波，至少在发射波导的传播模式。出口表面以选定的距离定位在要检查的表面上方，使得波导的特定传播模式与由表面反射并由波导反射引导的波的电场的传播模式之间的耦合系数取决于距离上的基本指数方式，或者可以至少局部地用指数变化函数进行比较，或者根据距离而快速地减小，并且用波导扫描表面。特别地，本发明的领域涉及扫描显微镜，纯粹的光学元件和纳米分辨率。本发明还可以用于光学控制给定表面和待移动到该表面之上的仪器之间的距离，特别是用于集成电路的微光刻的类型的任何仪器。

2. 发明授权

US5384464A Process and apparatus for optical near field microlithography 失效
标题翻译：用于光学近场微光刻的工艺和装置
公开(公告)号：US5384464A
公开(公告)日：1995-01-24
申请号：US842184
申请日：1992-05-07
申请人： Frederique De Fornel , Jean-Pierre Goudonnet , James Mantovani
发明人： Frederique De Fornel , Jean-Pierre Goudonnet , James Mantovani
IPC分类号： G03F7/20 , H01J37/304 , H01L21/027
CPC分类号： G03F7/70375 , H01J37/304
摘要： Direct scanning microlithography process of a substrate such as a wafer, by means of an optical and/or electronic beam, for obtaining photomechanical or electromechanical lithography of submicrometric structures at the surface of the substrate, wherein the source of the optical and/or electronic beam used for lithography is kept at an appropriate distance from the substrate by means of a waveguide proximity probe, such as a fiber optic proximity probe capable of measuring rapid variation, depending on the distance, of the intensity of an electromagnetic wave reflected by the substrate within the near field area located at the end of the probe. The invention also concerns microlithography devices using this process.
摘要翻译： PCT No.PCT / FR90 / 00682 Sec。 371日期：1992年5月7日 102（e）日期1992年5月7日PCT提交1990年9月21日PCT公布。出版物WO91 / 04513 日期1991年4月4日。通过光学和/或电子束直接扫描诸如晶片的衬底的微光刻工艺，用于在衬底的表面处获得亚微米结构的光机械或机电光刻，其中源用于光刻的光学和/或电子束通过波导邻近探针（例如光纤接近探测器）保持在离基板适当的距离，光纤接近探头能够根据距离来测量快速变化由位于探头末端的近场区域内的衬底反射的电磁波。本发明还涉及使用该方法的微光刻设备。

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