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1. 发明授权

US08295075B2 Resistive memory and method for controlling operations of the same 有权
标题翻译：电阻记忆及其控制方法
公开(公告)号：US08295075B2
公开(公告)日：2012-10-23
申请号：US12753316
申请日：2010-04-02
申请人： Wei-Chih Chien , Yi-Chou Chen , Feng-Ming Lee
发明人： Wei-Chih Chien , Yi-Chou Chen , Feng-Ming Lee
IPC分类号： G11C11/00
CPC分类号： G11C13/004 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/51 , G11C2213/71 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance.
摘要翻译：提供了一种用于控制电阻性存储器的操作的电阻性存储器和方法。电阻性存储器具有第一存储器层，第二存储器层和介质层。第一存储器层和第二存储器层中的每一个用于存储数据。介质层形成在第一存储层和第二存储层之间。该方法至少包括测量第一存储层和第二存储层之间的电阻的步骤，以及根据测得的电阻确定第一状态，第二状态和第三状态中的哪一种是电阻性存储器的状态。

2. 发明申请

US20110180775A1 PROGRAMMABLE METALLIZATION CELL WITH ION BUFFER LAYER 有权
标题翻译：具有离子缓冲层的可编程金属化电池
公开(公告)号：US20110180775A1
公开(公告)日：2011-07-28
申请号：US12692861
申请日：2010-01-25
申请人： Yuyu LIN , Feng-Ming Lee , Yi-Chou Chen
发明人： Yuyu LIN , Feng-Ming Lee , Yi-Chou Chen
IPC分类号： H01L45/00 , H01L29/18 , H01L21/06
CPC分类号： H01L45/085 , H01L45/122 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough; an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer; a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and a second electrode electrically coupled to the ion-supplying layer. Circuitry is coupled to the device to apply bias voltages to the first and second electrodes to induce creation and destruction of conducting bridges including the first metal element in the memory layer. The ion buffer layer can improve retention of the conducting bridge by reducing the likelihood that the first metallic element will be absorbed into the ion supplying layer.
摘要翻译：可编程金属化器件，包括第一电极; 存储层，其电耦合到所述第一电极并适于通过其导电桥的电解形成和破坏; 离子供给层，其含有能够扩散到所述存储层中的第一金属元素的离子源; 在离子供给层和存储层之间的导电离子缓冲层，并且允许所述离子的扩散; 以及电耦合到所述离子供应层的第二电极。电路耦合到器件以向第一和第二电极施加偏置电压，以引起包括存储器层中的第一金属元件的导电桥的产生和破坏。离子缓冲层可以通过降低第一金属元素被吸收到离子供给层中的可能性来改善导电桥的保留。

3. 发明授权

US09437266B2 Unipolar programmable metallization cell 有权
标题翻译：单极可编程金属化电池
公开(公告)号：US09437266B2
公开(公告)日：2016-09-06
申请号：US13675923
申请日：2012-11-13
申请人： Feng-Ming Lee , Yu-Yu Lin , Ming-Hsiu Lee
发明人： Feng-Ming Lee , Yu-Yu Lin , Ming-Hsiu Lee
IPC分类号： H01L45/00 , G11C11/00 , H01L27/24
CPC分类号： G11C11/00 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： A programmable metallization device comprises a first electrode and a second electrode, and a dielectric layer, a conductive ion-barrier layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the dielectric layer to represent a data value using bias voltages having the same polarity, enabling the use of diode access devices. To form a conductive bridge, a bias is applied that is high enough to cause ions to penetrate the conductive ion-barrier layer into the dielectric layer, which then form filaments or bridges. To destruct the conductive bridge, a bias of the same polarity is applied that causes current to flow through the structure, while ion flow is blocked by the conductive ion-barrier layer. As a result of Joule heating, any bridge in the dielectric layer disintegrates.
摘要翻译：可编程金属化器件包括在第一和第二电极之间串联的第一电极和第二电极以及电介质层，导电离子阻挡层和离子供给层。在操作中，在电介质层中形成或破坏导电桥，以使用具有相同极性的偏置电压来表示数据值，从而能够使用二极管接入装置。为了形成导电桥，施加足够高的偏压，使得离子将导电离子阻挡层穿透到电介质层中，然后形成细丝或桥。为了破坏导电桥，施加相同极性的偏压，导致电流流过结构，同时离子流被导电离子阻挡层阻挡。作为焦耳加热的结果，介电层中的任何桥分解。

4. 发明申请

US20140027706A1 SWITCHING DEVICE AND OPERATING METHOD FOR THE SAME AND MEMORY ARRAY 有权
标题翻译：切换设备及其操作方法和存储器阵列
公开(公告)号：US20140027706A1
公开(公告)日：2014-01-30
申请号：US13561558
申请日：2012-07-30
申请人： Wei-Chih Chien , Feng-Ming Lee , Ming-Hsiu Lee
发明人： Wei-Chih Chien , Feng-Ming Lee , Ming-Hsiu Lee
IPC分类号： H01L27/24 , H03K17/975
CPC分类号： G11C13/0002 , G11C13/003 , H01L27/2409 , H01L43/02 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145 , H01L45/146
摘要： A switching device and an operating method for the same and a memory array are provided. The switching device comprises a first solid electrolyte, a second solid electrolyte and a switching layer. The switching layer is adjoined between the first solid electrolyte and the second solid electrolyte.
摘要翻译：提供了一种切换装置及其操作方法及其存储器阵列。开关装置包括第一固体电解质，第二固体电解质和开关层。开关层与第一固体电解质和第二固体电解质相邻。

5. 发明授权

US08134139B2 Programmable metallization cell with ion buffer layer 有权
标题翻译：可编程金属化电池与离子缓冲层
公开(公告)号：US08134139B2
公开(公告)日：2012-03-13
申请号：US12692861
申请日：2010-01-25
申请人： Yu-Yu Lin , Feng-Ming Lee , Yi-Chou Chen
发明人： Yu-Yu Lin , Feng-Ming Lee , Yi-Chou Chen
IPC分类号： H01L29/18 , H01L21/06 , H01L45/00
CPC分类号： H01L45/085 , H01L45/122 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： A programmable metallization device, comprises a first electrode; a memory layer electrically coupled to the first electrode and adapted for electrolytic formation and destruction of a conducting bridge therethrough; an ion-supplying layer containing a source of ions of a first metal element capable of diffusion into and out of the memory layer; a conductive ion buffer layer between the ion-supplying layer and the memory layer, and which allows diffusion therethrough of said ions; and a second electrode electrically coupled to the ion-supplying layer. Circuitry is coupled to the device to apply bias voltages to the first and second electrodes to induce creation and destruction of conducting bridges including the first metal element in the memory layer. The ion buffer layer can improve retention of the conducting bridge by reducing the likelihood that the first metallic element will be absorbed into the ion supplying layer.
摘要翻译：可编程金属化器件，包括第一电极; 存储层，其电耦合到所述第一电极并适于通过其导电桥的电解形成和破坏; 离子供给层，其含有能够扩散到所述存储层中的第一金属元素的离子源; 在离子供给层和存储层之间的导电离子缓冲层，并且允许所述离子的扩散; 以及电耦合到所述离子供应层的第二电极。电路耦合到器件以向第一和第二电极施加偏置电压，以引起包括存储器层中的第一金属元件的导电桥的产生和破坏。离子缓冲层可以通过降低第一金属元素被吸收到离子供给层中的可能性来改善导电桥的保留。

6. 发明申请

US20110286258A1 NONVOLATILE MEMORY DEVICE HAVING A TRANSISTOR CONNECTED IN PARALLEL WITH A RESISTANCE SWITCHING DEVICE 有权
标题翻译：具有与电阻切换装置并联连接的晶体管的非易失性存储器件
公开(公告)号：US20110286258A1
公开(公告)日：2011-11-24
申请号：US12785978
申请日：2010-05-24
申请人： Yi-Chou Chen , Wei-Chih Chien , Feng-Ming Lee
发明人： Yi-Chou Chen , Wei-Chih Chien , Feng-Ming Lee
IPC分类号： G11C11/00 , G11C7/00 , G11C7/22
CPC分类号： G11C13/003 , G11C8/14 , G11C11/56 , G11C11/5678 , G11C11/5685 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2013/0076 , G11C2213/75 , G11C2213/79
摘要： A memory device comprises an array of memory cells each capable of storing multiple bits of data. The memory cells are arranged in memory strings that are connected to a common source line. Each memory cell includes a programmable transistor connected in parallel with a resistance switching device. The transistor is switchable between a plurality of different threshold voltages associated with respective memory states. The resistance switching device is configured to be switchable between a plurality of different resistances associated with respective memory states.
摘要翻译：存储器件包括每个能够存储多个数据位的存储器单元的阵列。存储单元被布置在连接到公共源极线的存储器串中。每个存储单元包括与电阻切换装置并联连接的可编程晶体管。晶体管可在与各个存储器状态相关联的多个不同阈值电压之间切换。电阻切换装置被配置为可在与各个存储器状态相关联的多个不同电阻之间切换。

7. 发明申请

US20140131653A1 UNIPOLAR PROGRAMMABLE METALLIZATION CELL 有权
标题翻译： UNIPOLAR可编程金属化细胞
公开(公告)号：US20140131653A1
公开(公告)日：2014-05-15
申请号：US13675923
申请日：2012-11-13
申请人： FENG-MING LEE , YU-YU LIN , MING-HSIU LEE
发明人： FENG-MING LEE , YU-YU LIN , MING-HSIU LEE
IPC分类号： H01L45/00 , G11C11/00
CPC分类号： G11C11/00 , H01L27/2409 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/145
摘要： A programmable metallization device comprises a first electrode and a second electrode, and a dielectric layer, a conductive ion-barrier layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the dielectric layer to represent a data value using bias voltages having the same polarity, enabling the use of diode access devices. To form a conductive bridge, a bias is applied that is high enough to cause ions to penetrate the conductive ion-barrier layer into the dielectric layer, which then form filaments or bridges. To destruct the conductive bridge, a bias of the same polarity is applied that causes current to flow through the structure, while ion flow is blocked by the conductive ion-barrier layer. As a result of Joule heating, any bridge in the dielectric layer disintegrates.
摘要翻译：可编程金属化器件包括在第一和第二电极之间串联的第一电极和第二电极以及电介质层，导电离子阻挡层和离子供给层。在操作中，在电介质层中形成或破坏导电桥，以使用具有相同极性的偏置电压来表示数据值，从而能够使用二极管接入装置。为了形成导电桥，施加足够高的偏压，使得离子将导电离子阻挡层穿透到电介质层中，然后形成细丝或桥。为了破坏导电桥，施加相同极性的偏压，导致电流流过结构，同时离子流被导电离子阻挡层阻挡。作为焦耳加热的结果，介电层中的任何桥分解。

8. 发明授权

US08331127B2 Nonvolatile memory device having a transistor connected in parallel with a resistance switching device 有权
标题翻译：具有与电阻切换装置并联连接的晶体管的非易失性存储装置
公开(公告)号：US08331127B2
公开(公告)日：2012-12-11
申请号：US12785978
申请日：2010-05-24
申请人： Yi-Chou Chen , Wei-Chih Chien , Feng-Ming Lee
发明人： Yi-Chou Chen , Wei-Chih Chien , Feng-Ming Lee
IPC分类号： G11C13/00
CPC分类号： G11C13/003 , G11C8/14 , G11C11/56 , G11C11/5678 , G11C11/5685 , G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/0009 , G11C13/004 , G11C13/0069 , G11C2013/0076 , G11C2213/75 , G11C2213/79
摘要： A memory device comprises an array of memory cells each capable of storing multiple bits of data. The memory cells are arranged in memory strings that are connected to a common source line. Each memory cell includes a programmable transistor connected in parallel with a resistance switching device. The transistor is switchable between a plurality of different threshold voltages associated with respective memory states. The resistance switching device is configured to be switchable between a plurality of different resistances associated with respective memory states.
摘要翻译：存储器件包括每个能够存储多个数据位的存储器单元的阵列。存储单元被布置在连接到公共源极线的存储器串中。每个存储单元包括与电阻切换装置并联连接的可编程晶体管。晶体管可在与各个存储器状态相关联的多个不同阈值电压之间切换。电阻切换装置被配置为可在与各个存储器状态相关联的多个不同电阻之间切换。

9. 发明申请

US20110242874A1 RESISTIVE MEMORY AND METHOD FOR CONTROLLING OPERATIONS OF THE SAME 有权
标题翻译：电阻记忆及其控制方法
公开(公告)号：US20110242874A1
公开(公告)日：2011-10-06
申请号：US12753316
申请日：2010-04-02
申请人： Wei-Chih Chien , Yi-Chou Chen , Feng-Ming Lee
发明人： Wei-Chih Chien , Yi-Chou Chen , Feng-Ming Lee
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/004 , G11C11/5614 , G11C11/5685 , G11C13/0007 , G11C13/0011 , G11C13/0069 , G11C2213/51 , G11C2213/71 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146
摘要： A resistive memory and a method for controlling operations of the resistive memory are provided. The resistive memory has a first memory layer, a second memory layer and a medium layer. Each of the first memory layer and the second memory layer is used to store data. The medium layer is formed between the first memory layer and the second memory layer. The method comprises at least a step of measuring a resistance between the first memory layer and the second memory layer, and determining which one of a first state, a second state and a third state is a state of the resistive memory according to the measured resistance.
摘要翻译：提供了一种用于控制电阻性存储器的操作的电阻性存储器和方法。电阻性存储器具有第一存储器层，第二存储器层和介质层。第一存储器层和第二存储器层中的每一个用于存储数据。介质层形成在第一存储层和第二存储层之间。该方法至少包括测量第一存储层和第二存储层之间的电阻的步骤，以及根据测得的电阻确定第一状态，第二状态和第三状态中的哪一种是电阻性存储器的状态。

10. 发明授权

US09117515B2 Programmable metallization cell with two dielectric layers 有权
标题翻译：具有两个电介质层的可编程金属化电池
公开(公告)号：US09117515B2
公开(公告)日：2015-08-25
申请号：US13352946
申请日：2012-01-18
申请人： Feng-Ming Lee , Yu-Yu Lin
发明人： Feng-Ming Lee , Yu-Yu Lin
IPC分类号： G11C11/00 , G11C13/00 , H01L45/00 , H01L27/24 , G11C8/10
CPC分类号： G11C13/0011 , G11C8/10 , G11C2213/54 , G11C2213/71 , H01L27/2463 , H01L45/085 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1675
摘要： A programmable metallization device comprises a first electrode and a second electrode, and a first dielectric layer, a second dielectric layer, and an ion-supplying layer in series between the first and second electrodes. In operation, a conductive bridge is formed or destructed in the first dielectric layer to represent a data value. During read, a read bias is applied that is sufficient to cause formation of a transient bridge in the second dielectric layer, and make a conductive path through the cell if the bridge is present in the first dielectric layer. If the bridge is not present in the first dielectric layer during the read, then the conductive path is not formed. Upon removal of the read bias voltage any the conductive bridge formed in the second dielectric layer is destructed while the conductive bridge in the corresponding other first dielectric layer, if any, remains.
摘要翻译：可编程金属化器件包括第一电极和第二电极，以及在第一和第二电极之间串联的第一电介质层，第二电介质层和离子供给层。在操作中，在第一电介质层中形成或破坏导电桥以表示数据值。在读取期间，施加足以在第二电介质层中形成瞬态电桥的读取偏压，并且如果桥存在于第一介电层中，则形成通过电池的导电路径。如果在读取期间桥不在第一电介质层中，则不形成导电路径。在去除读取的偏置电压时，形成在第二介电层中的任何导电桥被破坏，而相应的其它第一介电层（如果有的话）中的导电桥保留。

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