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1. 发明申请

US20130277660A1 THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME 审中-公开
标题翻译：薄膜晶体管和平板显示装置
公开(公告)号：US20130277660A1
公开(公告)日：2013-10-24
申请号：US13922785
申请日：2013-06-20
申请人： Jin-Seong Park , Yeon-Gon Mo , Jae-Kyeong Jeong , Min-Kyu Kim , Hyun-Joong Chung , Tae-Kyung Ahn , Eun-Hyun Kim
发明人： Jin-Seong Park , Yeon-Gon Mo , Jae-Kyeong Jeong , Min-Kyu Kim , Hyun-Joong Chung , Tae-Kyung Ahn , Eun-Hyun Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L27/3262 , H01L29/45
摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.
摘要翻译：一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

2. 发明授权

US08227804B2 Organic light-emitting display device 有权
标题翻译：有机发光显示装置
公开(公告)号：US08227804B2
公开(公告)日：2012-07-24
申请号：US13023686
申请日：2011-02-09
申请人： Huiwon Yang , Ki-Ju Im , Chaun-Gi Choi , Eun-Hyun Kim , Steve Y. G. Mo
发明人： Huiwon Yang , Ki-Ju Im , Chaun-Gi Choi , Eun-Hyun Kim , Steve Y. G. Mo
IPC分类号： H01L29/10
CPC分类号： H01L27/3262
摘要： An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer.
摘要翻译：一种有机发光显示装置，包括：形成在基板上的栅电极; 形成在栅电极上的第一绝缘层; 形成在所述第一绝缘层上的与所述栅电极相对的有源层; 形成在所述第一绝缘层上的第二绝缘层，具有用于暴露所述有源层的第一开口; 源极/漏电极，形成在第二绝缘层上，以便通过第一开口连接到有源层的暴露部分; 以及形成在所述有源层上并接触所述第二绝缘层的金属层。

3. 发明申请

US20110297948A1 ORGANIC LIGHT-EMITTING DISPLAY 有权
标题翻译：有机发光显示
公开(公告)号：US20110297948A1
公开(公告)日：2011-12-08
申请号：US13069740
申请日：2011-03-23
申请人： Jong-Han Jeong , Steve Y.G. Mo , Eun-Hyun Kim , Hyun-Sun Park
发明人： Jong-Han Jeong , Steve Y.G. Mo , Eun-Hyun Kim , Hyun-Sun Park
IPC分类号： H01L51/52
CPC分类号： H01L27/3272
摘要： An organic light-emitting display is disclosed. In one embodiment, the display includes i) a substrate, ii) a thin film transistor formed on the substrate, and comprising i) a gate electrode, ii) an active layer electrically insulated from the gate electrode, and iii) source and drain electrodes that are electrically connected to the active layer and iii) a first electrode electrically connected to the thin film transistor. The display further includes an intermediate layer formed on the first electrode and comprising an organic emission layer and a second electrode formed on the intermediate layer, wherein the source electrode or the drain electrode has an optical blocking portion extending in the direction of substrate thickness.
摘要翻译：公开了一种有机发光显示器。在一个实施例中，显示器包括i）衬底，ii）形成在衬底上的薄膜晶体管，并且包括i）栅电极，ii）与栅极电绝缘的有源层，以及iii）源极和漏极其电连接到有源层，以及iii）电连接到薄膜晶体管的第一电极。显示器还包括形成在第一电极上并包括有机发射层和形成在中间层上的第二电极的中间层，其中源电极或漏极具有在衬底厚度方向上延伸的光学阻挡部分。

4. 发明申请

US20110095274A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110095274A1
公开(公告)日：2011-04-28
申请号：US12829139
申请日：2010-07-01
申请人： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jae-Soon IM
发明人： Hyun-Joong CHUNG , Jin-Seong PARK , Jong-Han JEONG , Jae-Kyeong JEONG , Yeon-Gon MO , Min-Kyu KIM , Tae-Kyung AHN , Hui-Won YANG , Kwang-Suk KIM , Eun-Hyun KIM , Jae-Wook KANG , Jae-Soon IM
IPC分类号： H01L51/52 , H01L51/56 , H01L33/00
CPC分类号： H01L27/3248 , H01L27/1225 , H01L27/3258 , H01L27/3262 , H01L29/66969 , H01L29/7869 , H01L51/52 , H01L51/5237 , H01L51/56 , H01L2227/323 , H01L2251/5346
摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.
摘要翻译：公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。进一步公开了易于应用于大型显示装置和/或可容易地批量生产的有机发光显示装置。另外公开了一种制造有机发光显示装置的方法。有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。

5. 发明授权

US08785922B2 Thin film transistor, organic luminescence display including the same, and method of manufacturing the organic luminescence display 有权
标题翻译：薄膜晶体管，包括其的有机发光显示器以及制造有机发光显示器的方法
公开(公告)号：US08785922B2
公开(公告)日：2014-07-22
申请号：US13415776
申请日：2012-03-08
申请人： Hui-Won Yang , Eun-Hyun Kim
发明人： Hui-Won Yang , Eun-Hyun Kim
IPC分类号： H01L29/10 , H01L21/00 , H01L29/786
CPC分类号： H01L29/7869 , H01L27/3262 , H01L29/41733 , H01L29/42384
摘要： A thin film transistor (TFT) including a substrate; a gate electrode formed over the substrate, an active layer insulated from the gate electrode by using a gate insulation film; an etch stop layer which is formed over the active layer and includes first and second holes for exposing the active layer; a first electrode; and a second electrode including a first part and a second part. The first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer. At least one portion of the first part of the second electrode overlaps with the gate electrode. The second part of the second electrode does not overlap with and is separated from the gate electrode.
摘要翻译：一种薄膜晶体管（TFT），包括基板; 形成在所述基板上的栅电极，通过使用栅极绝缘膜与所述栅电极绝缘的有源层; 蚀刻停止层，其形成在有源层上并且包括用于暴露有源层的第一和第二孔; 第一电极; 以及包括第一部分和第二部分的第二电极。第一部分形成在蚀刻停止层上，第二部分被接收在第二孔中，直接接触有源层，并将第一部分连接到有源层。第二电极的第一部分的至少一部分与栅电极重叠。第二电极的第二部分不与栅电极重叠并与栅电极分离。

6. 发明授权

US08283671B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the same 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08283671B2
公开(公告)日：2012-10-09
申请号：US12453724
申请日：2009-05-20
申请人： Eun-Hyun Kim , Jae-Seob Lee , Dong-Un Jin
发明人： Eun-Hyun Kim , Jae-Seob Lee , Dong-Un Jin
IPC分类号： H01L27/14 , H01L29/04 , H01L29/15 , H01L31/036
CPC分类号： H01L29/66765 , H01L27/1281 , H01L27/3262 , H01L29/78618 , H01L29/78669 , H01L29/78678
摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same, which allow a size of a grain of a channel region to be increased, can effectively protect the channel region of a semiconductor layer at the time of etching process, and can reduce processing cost. The thin film transistor includes a substrate, a gate electrode disposed on the substrate, a gate insulating layer disposed on the gate electrode, a semiconductor layer pattern disposed on the gate insulating layer and including a channel region, a source region and a drain region, an etch stop layer pattern disposed on the channel region of the semiconductor layer pattern and having a thickness of 20 to 60 nm, and source and drain electrodes disposed on the source and drain regions of the semiconductor layer pattern, respectively.
摘要翻译：一种薄膜晶体管及其制造方法，以及包含该薄膜晶体管的有机发光二极管显示装置，其能够增加沟道区域的尺寸，可以有效地保护半导体层的沟道区域蚀刻过程的时间，并可以降低加工成本。薄膜晶体管包括基板，设置在基板上的栅极电极，设置在栅电极上的栅极绝缘层，设置在栅极绝缘层上并包括沟道区域，源极区域和漏极区域的半导体层图案，设置在半导体层图案的沟道区上并具有20至60nm厚度的蚀刻停止层图案，以及设置在半导体层图案的源极和漏极区上的源极和漏极。

7. 发明申请

US20110198584A1 ORGANIC LIGHT-EMITTING DISPLAY DEVICE 有权
标题翻译：有机发光显示装置
公开(公告)号：US20110198584A1
公开(公告)日：2011-08-18
申请号：US13023686
申请日：2011-02-09
申请人： Huiwon YANG , Ki-Ju Im , Chaun-Gi Choi , Eun-Hyun Kim , Steve Y.G. Mo
发明人： Huiwon YANG , Ki-Ju Im , Chaun-Gi Choi , Eun-Hyun Kim , Steve Y.G. Mo
IPC分类号： H01L33/26
CPC分类号： H01L27/3262
摘要： An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer.
摘要翻译：一种有机发光显示装置，包括：形成在基板上的栅电极; 形成在栅电极上的第一绝缘层; 形成在所述第一绝缘层上的与所述栅电极相对的有源层; 形成在所述第一绝缘层上的第二绝缘层，具有用于暴露所述有源层的第一开口; 源极/漏电极，形成在第二绝缘层上，以便通过第一开口连接到有源层的暴露部分; 以及形成在所述有源层上并接触所述第二绝缘层的金属层。

8. 发明授权

US08052789B2 Polycrystalline silicon and crystallization method thereof 有权
标题翻译：多晶硅及其结晶方法
公开(公告)号：US08052789B2
公开(公告)日：2011-11-08
申请号：US11594135
申请日：2006-11-08
申请人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
发明人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
IPC分类号： C30B1/04
CPC分类号： B23K26/0738 , B23K26/082 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L27/1281
摘要： Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.
摘要翻译：公开了根据本发明的示例性实施方案的多晶硅及其结晶方法。多晶硅包括：绝缘基板; 以及形成在绝缘基板上的光学部分，用于接收CW激光束，并且在一个维度上按强度弱点，强度 - 弱度和强度 - 弱度的顺序改变光束的强度，使得非晶硅薄膜结晶。因此，当设置在诸如玻璃基板的绝缘膜上的非晶硅薄膜结晶到多晶硅薄膜时，本发明可以通过以恒定的方向和尺寸生长晶粒来形成良好的多晶硅薄膜。

9. 发明申请

US20110108831A1 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：有机发光显示装置及其制造方法
公开(公告)号：US20110108831A1
公开(公告)日：2011-05-12
申请号：US12848919
申请日：2010-08-02
申请人： Jong-Han Jeong , Eun-Hyun Kim , Jae-Wook Kang , Min-Kyu Kim , Yeon-Gon Mo
发明人： Jong-Han Jeong , Eun-Hyun Kim , Jae-Wook Kang , Min-Kyu Kim , Yeon-Gon Mo
IPC分类号： H01L33/28 , H01L21/44
CPC分类号： H01L27/3248 , H01L27/3246 , H01L27/3262 , H01L27/3265 , H01L51/5215
摘要： An organic light emitting display device and a method of manufacturing the device are disclosed. The method includes forming a layer over an oxide semiconductor layer to protect the oxide semiconductor layer from damage as further layers are formed and etched.
摘要翻译：公开了一种有机发光显示装置及其制造方法。该方法包括在氧化物半导体层上形成一层以保护氧化物半导体层免受损害，因为形成和蚀刻另外的层。

10. 发明申请

US20070117286A1 Polycrystalline silicon and crystallization method thereof 有权
标题翻译：多晶硅及其结晶方法
公开(公告)号：US20070117286A1
公开(公告)日：2007-05-24
申请号：US11594135
申请日：2006-11-08
申请人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
发明人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
IPC分类号： H01L21/84 , H01L31/062 , H01L21/00
CPC分类号： B23K26/0738 , B23K26/082 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L27/1281
摘要： Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.
摘要翻译：公开了根据本发明的示例性实施方案的多晶硅及其结晶方法。多晶硅包括：绝缘基板; 以及形成在绝缘基板上的光学部分，用于接收CW激光束，并且在一个维度上按强度弱点，强度 - 弱度和强度 - 弱度的顺序改变光束的强度，使得非晶硅薄膜结晶。因此，当设置在诸如玻璃基板的绝缘膜上的非晶硅薄膜结晶到多晶硅薄膜时，本发明可以通过以恒定的方向和尺寸生长晶粒来形成良好的多晶硅薄膜。

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