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1. 发明授权

US08052789B2 Polycrystalline silicon and crystallization method thereof 有权
标题翻译：多晶硅及其结晶方法
公开(公告)号：US08052789B2
公开(公告)日：2011-11-08
申请号：US11594135
申请日：2006-11-08
申请人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
发明人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
IPC分类号： C30B1/04
CPC分类号： B23K26/0738 , B23K26/082 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L27/1281
摘要： Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.
摘要翻译：公开了根据本发明的示例性实施方案的多晶硅及其结晶方法。多晶硅包括：绝缘基板; 以及形成在绝缘基板上的光学部分，用于接收CW激光束，并且在一个维度上按强度弱点，强度 - 弱度和强度 - 弱度的顺序改变光束的强度，使得非晶硅薄膜结晶。因此，当设置在诸如玻璃基板的绝缘膜上的非晶硅薄膜结晶到多晶硅薄膜时，本发明可以通过以恒定的方向和尺寸生长晶粒来形成良好的多晶硅薄膜。

2. 发明申请

US20070117286A1 Polycrystalline silicon and crystallization method thereof 有权
标题翻译：多晶硅及其结晶方法
公开(公告)号：US20070117286A1
公开(公告)日：2007-05-24
申请号：US11594135
申请日：2006-11-08
申请人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
发明人： Jin Jang , Jae-Hwan Oh , Eun-Hyun Kim , Ki-Hyoung Kim
IPC分类号： H01L21/84 , H01L31/062 , H01L21/00
CPC分类号： B23K26/0738 , B23K26/082 , H01L21/0237 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L21/02678 , H01L21/02683 , H01L27/1281
摘要： Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.
摘要翻译：公开了根据本发明的示例性实施方案的多晶硅及其结晶方法。多晶硅包括：绝缘基板; 以及形成在绝缘基板上的光学部分，用于接收CW激光束，并且在一个维度上按强度弱点，强度 - 弱度和强度 - 弱度的顺序改变光束的强度，使得非晶硅薄膜结晶。因此，当设置在诸如玻璃基板的绝缘膜上的非晶硅薄膜结晶到多晶硅薄膜时，本发明可以通过以恒定的方向和尺寸生长晶粒来形成良好的多晶硅薄膜。

3. 发明申请

US20060286780A1 Method for forming silicon thin-film on flexible metal substrate 失效
标题翻译：在柔性金属基板上形成硅薄膜的方法
公开(公告)号：US20060286780A1
公开(公告)日：2006-12-21
申请号：US10570285
申请日：2004-09-02
申请人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
发明人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02425 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。形成在金属基板（110）上的绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

4. 发明授权

US07659185B2 Method for forming silicon thin-film on flexible metal substrate 失效
标题翻译：在柔性金属基板上形成硅薄膜的方法
公开(公告)号：US07659185B2
公开(公告)日：2010-02-09
申请号：US10570285
申请日：2004-09-02
申请人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
发明人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02425 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。在金属基板（110）上形成绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

5. 发明申请

US20110223748A1 METHOD FOR PHASE TRANSITION OF AMORPHOUS MATERIAL 审中-公开
标题翻译：非晶材料相转移方法
公开(公告)号：US20110223748A1
公开(公告)日：2011-09-15
申请号：US13063182
申请日：2009-05-19
申请人： Jin Jang , Jae-Hwan Oh , Dong-Han Kang , Jun-Hyuk Cheon
发明人： Jin Jang , Jae-Hwan Oh , Dong-Han Kang , Jun-Hyuk Cheon
IPC分类号： H01L21/20
CPC分类号： H01L21/02672 , H01L21/02532 , H01L27/1277
摘要： Disclosed herein is a method of crystallizing an amorphous material for use in fabrication of thin film transistors. The method includes forming an amorphous silicon layer on a substrate, depositing a Ni metal layer on part of the amorphous silicon layer, and heat-treating the amorphous silicon layer to cause phase transition of the amorphous silicon, wherein the Ni metal layer is deposited to an average thickness of 0.79 Å or less. The method can crystallize an amorphous material for use in thin film transistors using the metal induced lateral crystallization while restricting thickness and density of Ni, thereby minimizing current leakage in the thin film transistor.
摘要翻译：本文公开了一种使用于制造薄膜晶体管的非晶材料的结晶方法。该方法包括在衬底上形成非晶硅层，在非晶硅层的一部分上沉积Ni金属层，并对非晶硅层进行热处理以引起非晶硅的相变，其中Ni金属层被沉积到平均厚度为0.79以下。该方法可以使用金属诱导横向结晶在薄膜晶体管中使用非晶材料，同时限制Ni的厚度和密度，从而最小化薄膜晶体管中的电流泄漏。

6. 发明授权

US07688370B2 Active pixel sensor array 有权
标题翻译：有源像素传感器阵列
公开(公告)号：US07688370B2
公开(公告)日：2010-03-30
申请号：US11295373
申请日：2005-12-06
申请人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
发明人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
IPC分类号： H04N3/14
CPC分类号： H04N5/37452 , H04N5/3559
摘要： Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.
摘要翻译：公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

7. 发明授权

US07662681B2 Method for fabricating reverse-staggered thin film transistor 失效
标题翻译：逆交错薄膜晶体管的制造方法
公开(公告)号：US07662681B2
公开(公告)日：2010-02-16
申请号：US11609374
申请日：2006-12-12
申请人： Jin Jang , Jun-Hyuk Cheon
发明人： Jin Jang , Jun-Hyuk Cheon
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78678 , H01L27/1296 , H01L29/04 , H01L29/66765
摘要： Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.
摘要翻译：本文公开了一种用于制造反向交错多晶硅薄膜晶体管的方法，更具体地说，一种用于制造反向交错多晶硅薄膜晶体管的方法，其中磷硅酸盐旋涂玻璃（P-SOG）用于栅极绝缘膜。该方法包括以下步骤：在绝缘基板上形成缓冲层; 在缓冲层上形成栅极金属图案; 在栅极金属图案上形成平坦化的栅极绝缘膜; 在栅极绝缘膜上沉积非晶硅层; 将所述非晶硅层结晶成多晶硅层; 在多晶硅层上形成n +或p +层; 在n +或p +层上形成源极/漏极金属层; 以及在源极/漏极金属层上形成钝化层。

8. 发明申请

US20090032873A1 Ultra thin single crystalline semiconductor TFT and process for making same 审中-公开
标题翻译：超薄单晶半导体TFT及其制造方法
公开(公告)号：US20090032873A1
公开(公告)日：2009-02-05
申请号：US11895125
申请日：2007-08-23
申请人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
发明人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78603 , H01L21/2007 , H01L29/78654
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

9. 发明申请

US20090021287A1 Circuit and method for driving organic light emitting diode 有权
标题翻译：用于驱动有机发光二极管的电路和方法
公开(公告)号：US20090021287A1
公开(公告)日：2009-01-22
申请号：US11662605
申请日：2004-09-15
申请人： Jin Jang , Joon-Chul Goh
发明人： Jin Jang , Joon-Chul Goh
IPC分类号： H03K3/00
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.
摘要翻译：用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管和向OLED输出驱动电流，用于将数据电压传输到第一晶体管的第二晶体管，用于连接栅极和第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。

10. 发明申请

US20070069637A1 Polymer light emitting diode having interinsulation layer and method for fabricating the same 审中-公开
标题翻译：具有隔离层的聚合物发光二极管及其制造方法
公开(公告)号：US20070069637A1
公开(公告)日：2007-03-29
申请号：US11321703
申请日：2005-12-29
申请人： Jin Jang , Yong-Kyun Lee
发明人： Jin Jang , Yong-Kyun Lee
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L51/50 , B82Y30/00 , H01L51/5088
摘要： A polymer light emitting diode having an interinsulation layer between a hole injecting layer (or a hole transporting layer) and a light emitting polymer layer, and a method for fabricating the polymer light emitting diode. The polymer light emitting diode having the interinsulation layer includes a hole injecting layer formed on an anode layer, formed on a glass substrate, by coating or printing; the interinsulation layer having a designated thickness formed on the hole injecting layer; a light emitting polymer layer formed on the interinsulation layer by coating or printing; and an electron injecting layer formed on the light emitting polymer layer, and a cathode layer formed on the electron injecting layer.
摘要翻译：具有空穴注入层（或空穴传输层）和发光聚合物层之间的绝缘层的聚合物发光二极管及其制造方法。具有绝缘层的聚合物发光二极管包括通过涂布或印刷形成在玻璃基板上的阳极层上形成的空穴注入层; 所述绝缘层具有形成在所述空穴注入层上的指定厚度; 通过涂布或印刷在绝缘层上形成的发光聚合物层; 以及形成在发光聚合物层上的电子注入层和形成在电子注入层上的阴极层。

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