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1. 发明申请

US20120019398A1 METHODS AND SYSTEMS FOR CERTIFYING PROVENANCE OF ALCOHOLIC BEVERAGES 有权
标题翻译：用于认证酒精饮料的方法和系统
公开(公告)号：US20120019398A1
公开(公告)日：2012-01-26
申请号：US13211137
申请日：2011-08-16
申请人： Eric E. Vogt , Ruth Churchill
发明人： Eric E. Vogt , Ruth Churchill
IPC分类号： H04Q9/00 , G01K1/02
CPC分类号： G06Q10/00 , G06Q10/087
摘要： A system for certifying provenance of an alcoholic beverage includes a radio-frequency identification tag and a server. The radio-frequency identification tag, associated with a bottle containing an alcoholic beverage, periodically measures a plurality of values of an environmental condition of the bottle. The radio-frequency identification tag stores the plurality of measured values. The server receives the plurality of measured values for analysis. The server provides, via a user interface, a description of a provenance of the alcoholic beverage, the description generated responsive to an analysis of the plurality of measured values.
摘要翻译：用于认证酒精来源的系统包括射频识别标签和服务器。与含有酒精饮料的瓶子相关联的射频识别标签周期性地测量瓶子的环境条件的多个值。射频识别标签存储多个测量值。服务器接收多个测量值进行分析。服务器通过用户界面提供酒精饮料的来源的描述，响应于对多个测量值的分析而产生的描述。

2. 发明授权

US08022832B2 Methods and systems for certifying provenance of alcoholic beverages 有权
标题翻译：认证酒精来源的方法和系统
公开(公告)号：US08022832B2
公开(公告)日：2011-09-20
申请号：US12022878
申请日：2008-01-30
申请人： Eric E. Vogt , Ruth Churchill
发明人： Eric E. Vogt , Ruth Churchill
IPC分类号： G08B17/00 , G08B13/14 , G08B21/00 , G01W1/00 , G06F7/00
CPC分类号： G06Q10/00 , G06Q10/087
摘要： A system for certifying provenance of an alcoholic beverage includes a radio-frequency identification tag and a server. The radio-frequency identification tag, associated with a bottle containing an alcoholic beverage, periodically measures a plurality of values of an environmental condition of the bottle. The radio-frequency identification tag stores the plurality of measured values. The server receives the plurality of measured values for analysis. The server provides, via a user interface, a description of a provenance of the alcoholic beverage, the description generated responsive to an analysis of the plurality of measured values.
摘要翻译：用于认证酒精来源的系统包括射频识别标签和服务器。与含有酒精饮料的瓶子相关联的射频识别标签周期性地测量瓶子的环境条件的多个值。射频识别标签存储多个测量值。服务器接收多个测量值进行分析。服务器通过用户界面提供酒精饮料的来源的描述，响应于对多个测量值的分析而产生的描述。

3. 发明授权

US07732287B2 Method of forming a body-tie 有权
标题翻译：形成身体的方法
公开(公告)号：US07732287B2
公开(公告)日：2010-06-08
申请号：US11415703
申请日：2006-05-02
申请人： Paul S. Fechner , Gordon A. Shaw , Eric E. Vogt
发明人： Paul S. Fechner , Gordon A. Shaw , Eric E. Vogt
IPC分类号： H01L21/336
CPC分类号： H01L29/78615 , H01L29/66772
摘要： A method of forming a body-tie. The method includes forming the body-tie during an STI scheme of an SOI process. During the STI scheme, a first trench is formed. The first trench stops before a buried oxide layer of the SOI substrate. The first trench may determine a height of body tie that is shared between at least two FETs. A second trench may also be formed within the first trench. The second trench stops in the SOI substrate. The second trench defines the location and shape of a body-tie. Once the location and shape of the body-tie are defined, an oxide is deposited above the body-tie. The deposited oxide prevents certain implants from entering the body tie. By preventing these implants, a source and a drain implant may be self-aligned to the source and drain areas without requiring the use of the photoresist mask to shield the body tie regions from the source and drain implant.
摘要翻译：一种形成身体的方法。该方法包括在SOI工艺的STI方案期间形成体系。在STI方案中，形成第一沟槽。第一沟槽在SOI衬底的掩埋氧化物层之前停止。第一沟槽可以确定在至少两个FET之间共享的身体连接的高度。也可以在第一沟槽内形成第二沟槽。第二沟槽在SOI衬底中停止。第二个沟槽定义了一个领带的位置和形状。一旦定义了身体领带的位置和形状，就会在身体绑带上方沉积氧化物。沉积的氧化物防止某些植入物进入身体束带。通过防止这些植入物，源极和漏极注入可以与源极和漏极区域自对准，而不需要使用光致抗蚀剂掩模来屏蔽源极和漏极植入物的主体连接区域。

4. 发明授权

US07322015B2 Simulating a dose rate event in a circuit design 有权
标题翻译：模拟电路设计中的剂量率事件
公开(公告)号：US07322015B2
公开(公告)日：2008-01-22
申请号：US11029308
申请日：2005-01-05
申请人： Harry H. L. Liu , Keith W. Golke , Eric E. Vogt , Michael S. Liu
发明人： Harry H. L. Liu , Keith W. Golke , Eric E. Vogt , Michael S. Liu
IPC分类号： G06F17/50 , G06G7/62
CPC分类号： G06F17/5036
摘要： Behaviors of a transistor during a dose rate event can be modeled using a circuit simulation software package. A subcircuit model replaces a transistor in a circuit design to be simulated. The subcircuit model can be in the form of a schematic-based representation or a netlist. The subcircuit model provides a model of a source junction and a drain junction in the transistor during the dose rate event. The subcircuit model also includes the size of the transistor being replaced and the dose rate of the dose rate event. Once the transistor is replaced with the subcircuit model, a dose rate simulation may be performed to determine the dose rate hardness of the circuit design.
摘要翻译：在剂量率事件期间晶体管的行为可以使用电路仿真软件包进行建模。子电路模型取代要仿真的电路设计中的晶体管。子电路模型可以是基于原理图的表示形式或网表。子电路模型在剂量率事件期间提供晶体管中的源极结和漏极结的模型。子电路模型还包括被替换的晶体管的尺寸和剂量率事件的剂量率。一旦晶体管被子电路模型替代，可以执行剂量率模拟来确定电路设计的剂量率硬度。

5. 发明授权

US06903429B2 Magnetic sensor integrated with CMOS 失效
标题翻译：磁性传感器与CMOS集成
公开(公告)号：US06903429B2
公开(公告)日：2005-06-07
申请号：US10413377
申请日：2003-04-15
申请人： Dale F. Berndt , Andrzej Peczalski , Eric E. Vogt , William F. Witcraft
发明人： Dale F. Berndt , Andrzej Peczalski , Eric E. Vogt , William F. Witcraft
IPC分类号： H01L27/12 , H01L43/06 , H01L27/14 , H01L29/82 , H01L29/84
CPC分类号： H01L27/1203 , H01L43/065
摘要： A magnetic sensor device formed using SOI CMOS techniques includes a substrate, a silicon oxide layer and in some cases a plurality of gated regions. A first terminal is located between two innermost gated regions and supplies a supply voltage. A second and a third terminal, each of which is located between two adjacent gated regions other than the two innermost gated regions, output positive and negative Hall voltages. By appropriately controlling a bias voltage to the gated regions, small changes in a magnetic field induces larger currents in channel regions under the gated regions, which, in turn, results in detectable Hall voltages.
摘要翻译：使用SOI CMOS技术形成的磁传感器装置包括衬底，氧化硅层，并且在一些情况下包括多个选通区域。第一端子位于两个最内部门控区域之间并提供电源电压。第二和第三端子，每个端子位于除两个最内部选通区域之外的两个相邻选通区域之间，输出正和负霍尔电压。通过适当地控制选通区域的偏置电压，磁场的小的变化在选通区域的沟道区域中产生较大的电流，这又导致可检测的霍尔电压。

6. 发明授权

US07882452B2 Modeling silicon-on-insulator stress effects 有权
标题翻译：建模绝缘体上的硅应力效应
公开(公告)号：US07882452B2
公开(公告)日：2011-02-01
申请号：US11847999
申请日：2007-08-30
申请人： Eric E. Vogt , Greg A. Michaelson
发明人： Eric E. Vogt , Greg A. Michaelson
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5022
摘要： A method and system for modeling silicon-on-insulator shallow trench isolation stress effect is described. The method includes creating instance parameters that define dimensions of a body-tie enclosure of gate and gate-end. The instance parameters are added to a netlist. The netlist and a lookup table are used to generate a mobility multiplier. The mobility multiplier is added to the netlist and a circuit simulation program runs the netlist having the instance parameters and the mobility multiplier.
摘要翻译：描述了一种用于建模绝缘体上硅浅沟槽隔离应力效应的方法和系统。该方法包括创建实例参数，该实例参数定义门和门端的机身连接外壳的尺寸。实例参数被添加到网表。网表和查找表用于生成移动乘数。移动乘法器被添加到网表中，并且电路仿真程序运行具有实例参数和移动乘数的网表。

7. 发明申请

US20080254590A1 Fabrication process for silicon-on-insulator field effect transistors using high temperature nitrogen annealing 审中-公开
标题翻译：使用高温氮退火的绝缘体上硅场效应晶体管的制造工艺
公开(公告)号：US20080254590A1
公开(公告)日：2008-10-16
申请号：US11783598
申请日：2007-04-10
申请人： Eric E. Vogt , Paul S. Fechner
发明人： Eric E. Vogt , Paul S. Fechner
IPC分类号： H01L21/76
CPC分类号： H01L21/76283 , H01L21/84 , H01L27/1203
摘要： Disclosed is a method of fabricating a silicon-on-insulator (SOI) device that enables high device densities and mitigates variances in carrier mobility and saturation drain current (Idsat). The fabrication method incorporates one or more high temperature nitrogen anneal processes. The high temperature nitrogen anneal nitridizes the interfaces between the n-well and p-well silicon islands and the buried oxide layer. The high temperature nitrogen anneal also nitridizes the interfaces between the n-well and p-well silicon islands and the shallow trench isolation structure. The presence of diffused nitrogen at these interfaces substantially prevents compressive stresses on the n-well and p-well silicon islands, and substantially prevents upward bending of the n-well and p-well silicon islands, which cause variances in carrier mobility and Idsat.
摘要翻译：公开了一种制造绝缘体上硅（SOI）器件的方法，其能够实现高器件密度并减轻载流子迁移率和饱和漏极电流的变化（Id）。该制造方法包括一个或多个高温氮退火工艺。高温氮退火使n阱和p阱硅岛和掩埋氧化物层之间的界面氮化。高温氮退火还使n阱和p阱硅岛与浅沟槽隔离结构之间的界面氮化。在这些界面处扩散氮的存在基本上防止了n阱和p阱硅岛上的压缩应力，并且基本上防止了n阱和p阱硅岛的向上弯曲，这导致载流子迁移率的变化， SUB> sat 。

8. 发明授权

US07169679B2 Varactor with improved tuning range 失效
标题翻译： Varactor具有改进的调谐范围
公开(公告)号：US07169679B2
公开(公告)日：2007-01-30
申请号：US10040395
申请日：2002-01-07
申请人： Cheisan J. Yue , Mohammed A. Fathimulla , Eric E. Vogt , William L. Larson
发明人： Cheisan J. Yue , Mohammed A. Fathimulla , Eric E. Vogt , William L. Larson
IPC分类号： H01L21/20 , H01L21/36 , H01L21/336
CPC分类号： H01L27/0808 , H01L29/94
摘要： A varactor has a plurality of alternating P− wells and N+ regions formed in a silicon layer. Each of the P− wells forms a first N+/P− junction with the N+ region on one of its side and a second N+/P− junction with the N+ region on the other of its sides. A gate oxide is provided over each of the P− wells, and a gate silicon is provided over each of the gate oxides. The potential across the gate silicons and the N+ regions controls the capacitance of the varactor.
摘要翻译：变容二极管具有形成在硅层中的多个交替的P阱和N +区。每个P-阱与其一侧上的N +区形成第一N + / P-结，并且在其另一侧与N +区形成第二N + / P-结。在每个P-阱上提供栅极氧化物，并且在每个栅极氧化物上提供栅极硅。栅极硅和N +区域的电位控制变容二极管的电容。

9. 发明申请

US20090064062A1 Modeling Silicon-On-Insulator Stress Effects 有权
标题翻译：建模绝缘体上的应力影响
公开(公告)号：US20090064062A1
公开(公告)日：2009-03-05
申请号：US11847999
申请日：2007-08-30
申请人： Eric E. Vogt , Greg A. Michaelson
发明人： Eric E. Vogt , Greg A. Michaelson
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F17/5022
摘要： A method and system for modeling silicon-on-insulator shallow trench isolation stress effect is described. The method includes creating instance parameters that define dimensions of a body-tie enclosure of gate and gate-end. The instance parameters are added to a netlist. The netlist and a lookup table are used to generate a mobility multiplier. The mobility multiplier is added to the netlist and a circuit simulation program runs the netlist having the instance parameters and the mobility multiplier.
摘要翻译：描述了一种用于建模绝缘体上硅浅沟槽隔离应力效应的方法和系统。该方法包括创建实例参数，该实例参数定义门和门端的机身连接外壳的尺寸。实例参数被添加到网表。网表和查找表用于生成移动乘数。移动乘法器被添加到网表中，并且电路仿真程序运行具有实例参数和移动乘数的网表。

10. 发明申请

US20080198013A1 METHODS AND SYSTEMS FOR PROVIDING MECHANISMS FOR AUTHENTICATING CONTENTS OF A BOTTLE DURING ITS PROGRESS THROUGH A DISTRIBUTION CHANNEL 审中-公开
标题翻译：用于在通过分配通道进行过程中提供瓶子内容的机构的方法和系统
公开(公告)号：US20080198013A1
公开(公告)日：2008-08-21
申请号：US12022887
申请日：2008-01-30
申请人： Eric E. Vogt , Ruth Churchill
发明人： Eric E. Vogt , Ruth Churchill
IPC分类号： G08B13/14
CPC分类号： G06Q10/00 , G06Q10/087
摘要： A system for providing mechanisms for authenticating contents of a bottle containing an alcoholic beverage includes a neck seal applicator module, a bottle tag attachment module, and a storage element. The neck seal applicator module attaches, to the bottle containing an alcoholic beverage, a neck seal including a neck seal identification number and an invisible security taggant. The bottle tag attachment module attaches, to the bottle containing the alcoholic beverage, a radio-frequency identification tag storing a bottle tag number. The storage element stores an association between the bottle tag number and the neck seal identification number.
摘要翻译：用于提供用于认证含有酒精饮料的瓶子的内容物的机构的系统包括颈部密封施加器模块，瓶子标签附接模块和存储元件。颈部密封施加器模块附接到包含酒精饮料的瓶子，包括颈部密封识别号的颈部密封件和不可见的安全标签剂。瓶标签附件模块附着在含有酒精饮料的瓶子上，存储一个瓶标签号的射频识别标签。存储元件存储瓶标签号和颈部密封识别号之间的关联。

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