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    • 2. 发明授权
    • Short laser pulse generation by gas breakdown switching and highly
selective spectral filtering
    • 通过气体击穿切换和高选择性光谱过滤产生短脉冲
    • US3979694A
    • 1976-09-07
    • US485361
    • 1974-07-03
    • Julius GoldharEli Yablonovitch
    • Julius GoldharEli Yablonovitch
    • G01J3/00G01J3/18H01S3/00H01S3/23H05H1/22H01S3/101
    • G01J3/18G21B1/23H01S3/0057H01S3/073G01J3/0229
    • In a laser pulse generator, short pulses adjustable in the range between about 0.1 and 0.5 nanoseconds are produced by improved spectral filtering of the output of a gas breakdown switch. The spectral filter in one embodiment is a hot, linearly absorbing gas cell that passes both sidebands of the radiation producing the gas breakdown in the switch and that linearly absorbs the center frequency. A second embodiment uses a tandem dual-slit monochromator as the spectral filter in order to pass both sidebands. The hot gas cell is simpler, cheaper and characterized by a higher rejection ratio than any other alternative to date. It yields very clean pulses with a steeper leading edge than prior techniques. The leading edge is highly reproducible, as needed for nuclear fusion work. The advantage over prior pulsed CO.sub.2 lasers for nuclear fusion work is substantial, since those prior lasers have not achieved pulse durations less than one nanosecond.
    • 在激光脉冲发生器中,通过对气体击穿开关的输出进行改进的频谱滤波来产生可在约0.1和0.5纳秒之间范围内调节的短脉冲。 一个实施例中的光谱滤波器是热的线性吸收气室,其通过辐射的两个边带,产生开关中的气体击穿并且线性吸收中心频率。 第二实施例使用串联双缝单色仪作为频谱滤波器,以通过两个边带。 热气单元比迄今为止任何其他替代方案更简单,便宜并且具有更高的抑制率。 它产生非常干净的脉冲,具有比现有技术更陡的前沿。 根据核聚变工作的需要,前沿是高度可重复的。 与现有的用于核聚变工作的脉冲二氧化碳激光器相比,优点在于现有的激光器未达到小于1纳秒的脉冲持续时间。
    • 5. 发明授权
    • Circuit and method for eliminating surface currents on metals
    • 消除金属表面电流的电路和方法
    • US06262495B1
    • 2001-07-17
    • US09255832
    • 1999-02-23
    • Eli YablonovitchDan Sievenpiper
    • Eli YablonovitchDan Sievenpiper
    • H01Q138
    • H01Q15/008H01Q1/48H01Q1/52
    • A two dimensional periodic pattern of capacitive and inductive elements defined in the surface of a metal sheet are provided by a plurality of conductive patches each connected to a conductive back plane sheet between which an insulating dielectric is disposed. The elements acts to suppress surface currents in the surface defined by them. In particular, the array forms a ground plane mesh for use in combination with an antenna. The performance of a ground plane mesh is characterized by a frequency band within which no substantial surface currents are able to propagate along the ground plane mesh. Use of such a ground plane in aircraft or other metallic vehicles thereby prevents radiation from the antenna from propagating along the metallic skin of the aircraft or vehicle. This eliminates surface currents between the antenna and the ground plane thereby reducing power loss and unwanted coupling between neighboring antennae. The surface also reflects electromagnetic waves without the phase shift that occurs on a normal metal surface. This allows antennas to be constructed that were previously impractical.
    • 限定在金属片表面的电容和感应元件的二维周期性图案由多个导电贴片提供,每个导电贴片均连接到导电背板片上,绝缘电介质设置在导电背板之间。 这些元件用于抑制由它们定义的表面中的表面电流。 特别地,该阵列形成与天线组合使用的接地平面网格。 地平面网格的性能的特征在于其中没有实质的表面电流能够沿着地平面网格传播的频带。 在飞机或其他金属车辆中使用这种接地平面,从而防止来自天线的辐射沿着飞机或车辆的金属皮肤传播。 这消除了天线和接地平面之间的表面电流,从而减少了相邻天线之间的功率损耗和不期望的耦合。 该表面也反映了在正常金属表面上发生的没有相移的电磁波。 这样就可以构建以前不可行的天线。
    • 6. 发明授权
    • Method of making a DH laser with strained layers by MBE
    • 通过MBE制作具有应变层的DH激光器的方法
    • US4804639A
    • 1989-02-14
    • US117289
    • 1987-11-04
    • Eli Yablonovitch
    • Eli Yablonovitch
    • H01S5/32H01S5/343H01L21/306
    • B82Y20/00H01S5/32H01S5/34313H01S5/34306Y10S148/072Y10S148/095Y10S148/097Y10S148/169Y10S438/938
    • A method of making a semiconductor laser from a gallium arsenide substrate of a first conductivity type by depositing a first layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As of first conductivity type on the substrate and a thin second layer of semiconductor material for quantum confinement having the composition In.sub.y Ga.sub.1-y As on the first layer. This layer experiences sufficient strain in the semiconductor structure so as to minimize the threshold current density. The device is completed by depositing a third layer of semiconductor material having the composition Al.sub.x Ga.sub.1-x As and of second conductivity type on the second layer, and depositing a fourth layer of semiconductor material having the composition GaAs and of second conductivity type on the third layer.
    • 一种通过在衬底上沉积具有第一导电类型的组成Al x Ga 1-x As的第一半导体材料层和用于量子限制的薄的第二半导体材料层来制造具有第一导电类型的砷化镓衬底的半导体激光器的方法, 组成InyGa1-yAs在第一层。 该层在半导体结构中经历足够的应变,以便使阈值电流密度最小化。 通过在第二层上沉积具有组成Al x Ga 1-x As和第二导电类型的第三层半导体材料并在第三层上沉积具有组成GaAs和第二导电类型的第四层半导体材料来完成该器件。