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    • 2. 发明授权
    • Method of etching sendust and method of pattern-etching sendust and
chromium films
    • 蚀刻铁硅铝粉的方法和图案蚀刻硅铝铁和铬膜的方法
    • US5413672A
    • 1995-05-09
    • US90939
    • 1993-07-14
    • Eigo HirotsujiNaoya Fukuda
    • Eigo HirotsujiNaoya Fukuda
    • C23F1/28G11B5/187H01F10/14H01F41/30B44C1/22
    • B82Y25/00B82Y40/00C23F1/28G11B5/1878H01F10/145H01F41/308
    • An etching method for etching a sendust film formed on a substrate is disclosed. In this method, a mixture of acid solutions of nitric acid and hydrochloric acid is used as an etching liquid. The etching is desirably effected while the sendust film is directly or indirectly held in electrical connection with a ferrite member, with an area of a portion of the ferrite member which contacts the etching liquid being twice to twelve times a total area of etched portions of the sendust film. Also disclosed is a method for pattern-etching a sendust film, and a chromium base film formed between the sendust film and a substrate, which includes the steps of: (a) etching the sendust film to form a predetermined sendust pattern; and (b) etching the chromium base film to form a chromium pattern which conforms to the predetermined sendust pattern, such that the chromium base film is directly or indirectly held in electrical connection with a chromium bulk.
    • 公开了一种用于蚀刻形成在基板上的硅铝薄膜的蚀刻方法。 在该方法中,使用硝酸和盐酸的酸溶液的混合物作为蚀刻液。 希望在硅酸盐膜直接或间接地保持与铁氧体构件电连接时进行蚀刻,铁氧体构件与蚀刻液接触的部分的面积是蚀刻液的蚀刻部分的总面积的两倍至十二倍 sendust电影。 还公开了一种用于图案蚀刻铁硅铝膜和在硅铝硅膜与基板之间形成的铬基膜的方法,其包括以下步骤:(a)蚀刻铁硅铝膜以形成预定的铁硅铝磁铁图案; 和(b)蚀刻铬基膜以形成符合预定的硅铝片图案的铬图案,使得铬基膜直接或间接地保持与铬体电连接。