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1. 发明授权

US07470591B2 Method of forming a gate stack containing a gate dielectric layer having reduced metal content 失效
标题翻译：形成包含具有降低的金属含量的栅极电介质层的栅极堆叠的方法
公开(公告)号：US07470591B2
公开(公告)日：2008-12-30
申请号：US11239321
申请日：2005-09-30
申请人： David L. O'Meara , YoungJong Lee , Cory Wajda
发明人： David L. O'Meara , YoungJong Lee , Cory Wajda
IPC分类号： H01L21/00
CPC分类号： H01L21/28194 , H01L21/3105 , H01L21/31116 , H01L21/31122 , H01L29/517 , H01L29/78
摘要： A method is provided for reducing the metal content and controlling the metal depth profile of a gate dielectric layer in a gate stack. The method includes providing a substrate in a process chamber, depositing a gate dielectric layer on the substrate, where the gate dielectric layer includes a metal element. The metal element is selectively etched from at least a portion of the gate dielectric layer to form an etched gate dielectric layer with reduced metal content, and a gate electrode layer is formed on the etched gate dielectric layer.
摘要翻译：提供了一种用于降低金属含量并控制栅叠层中的栅介质层的金属深度分布的方法。该方法包括在处理室中提供衬底，在衬底上沉积栅极电介质层，其中栅极电介质层包括金属元素。从栅介质层的至少一部分选择性地蚀刻金属元件，以形成具有降低的金属含量的蚀刻栅极电介质层，并且在蚀刻的栅极介电层上形成栅极电极层。

2. 发明授权

US06344403B1 Memory device and method for manufacture 有权
标题翻译：存储器件及其制造方法
公开(公告)号：US06344403B1
公开(公告)日：2002-02-05
申请号：US09595735
申请日：2000-06-16
申请人： Sucharita Madhukar , Ramachandran Muralidhar , David L. O'Meara , Kristen C. Smith , Bich-Yen Nguyen
发明人： Sucharita Madhukar , Ramachandran Muralidhar , David L. O'Meara , Kristen C. Smith , Bich-Yen Nguyen
IPC分类号： H01L2120
CPC分类号： H01L21/28273 , B82Y10/00 , H01L21/02381 , H01L21/02532 , H01L21/0259 , H01L21/0262 , H01L21/3105 , H01L21/3144 , H01L21/3145 , H01L29/42332 , H01L29/66825
摘要： A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device are presented. The device is formed by first providing a semiconductor substrate (12) upon which a tunnel dielectric layer (14) is formed. A plurality of nanoclusters (19) is then grown on the tunnel dielectric layer (14). The growth of the nanoclusters (19) may be accomplished using low pressure chemical vapor deposition (LPCVD) or ultra high vacuum chemical vapor deposition (UHCVD) processes. Such growth may be facilitated by formation of a nitrogen-containing layer (502) overlying the tunnel dielectric layer (14). After growth of the nanoclusters (21), a control dielectric layer (20) is formed over the nanoclusters (21). In order to prevent oxidation of the formed nanoclusters (21), the nanoclusters (21) may be encapsulated using various techniques prior to formation of the control dielectric layer (20). A gate electrode (24) is then formed over the control dielectric (20), and portions of the control dielectric, the plurality of nanoclusters, and the gate dielectric that do not underlie the gate electrode are selectively removed. After formation of spacers (35), source and drain regions (32, 34) are then formed by implantation in the semiconductor layer (12) such that a channel region is formed between the source and drain regions (32, 34) underlying the gate electrode (24).
摘要翻译：提出了一种具有浮动栅极的半导体存储器件，其包括多个纳米团簇（21）和用于制造这种器件的技术。该器件通过首先提供其上形成有隧道介电层（14）的半导体衬底（12）形成。然后在隧道介电层（14）上生长多个纳米团簇（19）。纳米团簇（19）的生长可以使用低压化学气相沉积（LPCVD）或超高真空化学气相沉积（UHCVD）工艺来实现。可以通过形成覆盖在隧道介电层（14）上的含氮层（502）来促进这种生长。在纳米团簇（21）生长之后，在纳米团簇（21）上形成控制电介质层（20）。为了防止形成的纳米团簇（21）的氧化，可以在形成控制电介质层（20）之前使用各种技术将纳米团簇（21）进行封装。然后在控制电介质（20）上形成栅极（24），并且选择性地去除不在栅电极下面的控制电介质，多个纳米团簇和栅极电介质的部分。在形成间隔物（35）之后，然后通过注入在半导体层（12）中形成源极和漏极区域（32,34），使得沟道区域形成在栅极下面的源极和漏极区域（32,34）之间电极（24）。

3. 发明授权

US08673725B2 Multilayer sidewall spacer for seam protection of a patterned structure 有权
标题翻译：用于图案结构的接缝保护的多层侧壁间隔件
公开(公告)号：US08673725B2
公开(公告)日：2014-03-18
申请号：US12751926
申请日：2010-03-31
申请人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A Conti
发明人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A Conti
IPC分类号： H01L29/78
CPC分类号： H01L21/28247 , H01L29/6656
摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.
摘要翻译：描述了具有多层侧壁间隔件和形成方法的半导体器件。在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。

4. 发明授权

US07501352B2 Method and system for forming an oxynitride layer 失效
标题翻译：用于形成氧氮化物层的方法和系统
公开(公告)号：US07501352B2
公开(公告)日：2009-03-10
申请号：US11093260
申请日：2005-03-30
申请人： Masanobu Igeta , Cory Wajda , David L. O'Meara , Kristen Scheer , Toshihara Eurakawa
发明人： Masanobu Igeta , Cory Wajda , David L. O'Meara , Kristen Scheer , Toshihara Eurakawa
IPC分类号： H01L21/31
CPC分类号： C23C8/34 , C23C8/36 , H01J37/32192 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/3144 , H01L21/31662
摘要： The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molecular composition comprising oxygen to form an oxide film on the surface. The oxide film is exposed to nitrogen radicals formed by plasma induced dissociation of a second process gas comprising at least one molecular composition comprising nitrogen using plasma based on microwave irradiation via a plane antenna member having a plurality of slits to nitridate the oxide film and form the oxynitride film.
摘要翻译：本发明通常提供了在基板上制备氮氧化物膜的方法。衬底的表面暴露于通过紫外线（UV）辐射诱导的包含至少一种包含氧的分子组合物的第一工艺气体的解离形成的氧自由基，以在表面上形成氧化膜。氧化物膜暴露于通过等离子体诱导的包含至少一种包含氮的分子组合物的等离子体诱导的解离形成的氮自由基，所述分子组合物包含氮，使用基于微波照射的等离子体通过具有多个狭缝的平面天线构件来氮化氧化膜并形成氧氮化物膜。

5. 发明授权

US06297095B1 Memory device that includes passivated nanoclusters and method for manufacture 有权
标题翻译：包含钝化纳米簇的记忆体装置及其制造方法
公开(公告)号：US06297095B1
公开(公告)日：2001-10-02
申请号：US09596399
申请日：2000-06-16
申请人： Ramachandran Muralidhar , Chitra K. Subramanian , Sucharita Madhukar , Bruce E. White , Michael A. Sadd , Sufi Zafar , David L. O'Meara , Bich-Yen Nguyen
发明人： Ramachandran Muralidhar , Chitra K. Subramanian , Sucharita Madhukar , Bruce E. White , Michael A. Sadd , Sufi Zafar , David L. O'Meara , Bich-Yen Nguyen
IPC分类号： H01L21336
CPC分类号： H01L21/28282 , B82Y10/00 , H01L21/28273 , H01L29/66439 , H01L29/7888
摘要： A semiconductor memory device with a floating gate that includes a plurality of nanoclusters (21) and techniques useful in the manufacturing of such a device are presented. The device is formed by first providing a semiconductor substrate (12) upon which a tunnel dielectric layer (14) is formed. A plurality of nanoclusters (19) is then grown on the tunnel dielectric layer (14). After growth of the nanoclusters (21), a control dielectric layer (20) is formed over the nanoclusters (21). In order to prevent oxidation of the formed nanoclusters (21), the nanoclusters (21) may be encapsulated using various techniques prior to formation of the control dielectric layer (20). A gate electrode (24) is then formed over the control dielectric (20), and portions of the control dielectric, the plurality of nanoclusters, and the gate dielectric that do not underlie the gate electrode are selectively removed. After formation of spacers (35), source and drain regions (32, 34) are then formed by implantation in the semiconductor layer (12) such that a channel region is formed between the source and drain regions (32, 34) underlying the gate electrode (24).
摘要翻译：提出了一种具有浮动栅极的半导体存储器件，其包括多个纳米团簇（21）和用于制造这种器件的技术。该器件通过首先提供其上形成有隧道介电层（14）的半导体衬底（12）形成。然后在隧道介电层（14）上生长多个纳米团簇（19）。在纳米团簇（21）生长之后，在纳米团簇（21）上形成控制电介质层（20）。为了防止形成的纳米团簇（21）的氧化，可以在形成控制电介质层（20）之前使用各种技术将纳米团簇（21）进行封装。然后在控制电介质（20）上形成栅极（24），并且选择性地去除不在栅电极下面的控制电介质，多个纳米团簇和栅极电介质的部分。在形成间隔物（35）之后，然后通过注入在半导体层（12）中形成源极和漏极区域（32,34），使得沟道区域形成在栅极下面的源极和漏极区域（32,34）之间电极（24）。

6. 发明授权

US08809169B2 Multi-layer pattern for alternate ALD processes 有权
标题翻译：用于替代ALD过程的多层模式
公开(公告)号：US08809169B2
公开(公告)日：2014-08-19
申请号：US13250937
申请日：2011-09-30
申请人： David L. O'Meara , Aelan Mosden
发明人： David L. O'Meara , Aelan Mosden
IPC分类号： H01L21/20 , H01L21/033
CPC分类号： H01L21/0337 , H01L21/0338
摘要： A method of patterning a substrate. A sacrificial film is formed over a substrate and a pattern created therein. A first spacer layer is conformally deposited over the patterned sacrificial film and at least one horizontal portion of the first spacer layer is removed while vertical portions of the first spacer layer remain. A second spacer layer is conformally deposited over the patterned sacrificial film and the remaining portions of the first spacer layer. At least one horizontal portion of the second spacer layer is removed while vertical portions of the second spacer layer remain. Conformal deposition of the first and second spacer layers is optionally repeated one or more times. Conformal deposition of the first layer is optionally repeated. Then, one of the first or second spacer layers is removed while substantially leaving the vertical portions of the remaining one of the first or second spacer layers.
摘要翻译：图案化衬底的方法。在衬底上形成牺牲膜，并在其中形成图案。第一间隔层被共形沉积在图案化的牺牲膜上，并且除去第一间隔层的垂直部分的第一间隔层的至少一个水平部分。在图案化的牺牲膜和第一间隔层的剩余部分上共形沉积第二间隔层。除去第二间隔层的至少一个水平部分，同时保留第二间隔层的垂直部分。第一和第二间隔层的共形沉积可选地重复一次或多次。任选地重复第一层的共形沉积。然后，去除第一或第二间隔层中的一个，同时基本上留下第一或第二间隔层中剩余的一个的垂直部分。

7. 发明授权

US08460945B2 Method for monitoring status of system components 有权
标题翻译：监控系统组件状态的方法
公开(公告)号：US08460945B2
公开(公告)日：2013-06-11
申请号：US10673513
申请日：2003-09-30
申请人： David L. O'Meara , Daniel Craig Burdett , Stephen H. Cabral , Gert Leusink , John William Kostenko , Cory Wajda
发明人： David L. O'Meara , Daniel Craig Burdett , Stephen H. Cabral , Gert Leusink , John William Kostenko , Cory Wajda
IPC分类号： H01L21/00
CPC分类号： H01J37/32935 , G01N21/55 , G01N21/59
摘要： A method and system are provided for monitoring status of a system component in a process chamber of a batch type processing system. The method includes exposing a system component to light from a light source and monitoring interaction of the light with the system component to determine status of the system component. The method can detect light transmission and/or light reflection from a system component during a process that can include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component can be a consumable system part such as a process tube, a shield, a ring, a baffle, and a liner, and can further contain a protective coating.
摘要翻译：提供了一种用于监视批处理系统的处理室中的系统组件的状态的方法和系统。该方法包括将系统组件暴露于来自光源的光并监测光与系统组件的相互作用以确定系统组件的状态。该方法可以在可以包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺的过程中检测来自系统部件的光透射和/或光反射。系统组件可以是消耗系统部件，例如处理管，屏蔽，环，挡板和衬垫，并且还可以包含保护涂层。

8. 发明申请

US20110241085A1 DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE 有权
标题翻译：用于保护图案结构的双面隔板
公开(公告)号：US20110241085A1
公开(公告)日：2011-10-06
申请号：US12751891
申请日：2010-03-31
申请人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A. Conti
发明人： David L. O'Meara , Anthony Dip , Aelan Mosden , Pao-Hwa Chou , Richard A. Conti
IPC分类号： H01L29/78 , H01L21/311
CPC分类号： H01L29/4983 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.
摘要翻译：提供了具有双侧壁间隔件和成形方法的半导体器件。该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层，所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

9. 发明授权

US07509962B2 Method and control system for treating a hafnium-based dielectric processing system 失效
标题翻译：用于处理铪介质处理系统的方法和控制系统
公开(公告)号：US07509962B2
公开(公告)日：2009-03-31
申请号：US11038129
申请日：2005-01-21
申请人： David L. O'Meara , Shingo Maku
发明人： David L. O'Meara , Shingo Maku
IPC分类号： B08B6/00
CPC分类号： C03C17/001 , C03C17/22 , C03C17/23 , C03C2217/228 , C03C2217/258 , C03C2218/31 , C03C2218/33 , C23C16/4405 , Y10S438/905
摘要： A method and control system for treating a hafnium-based dielectric processing system in which a system component of the processing system is exposed to a chlorine-containing gas. A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine-containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system. The control system can utilize a computer readable medium to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process, and to exhaust a chlorinated hafnium product from the processing system.
摘要翻译：一种用于处理其中处理系统的系统组件暴露于含氯气体的铪基介质处理系统的方法和控制系统。在除去铪之后残留在处理系统中的残余铪副产物与来自含氯气体的含氯蚀刻剂反应。氯化铪产品从处理系统中挥发以用尽。控制系统可利用计算机可读介质向处理系统引入含氯气体，以调节处理系统中的温度和压力中的至少一个，以从含氯气体中产生含氯气体的含氯蚀刻剂在硅酸铪，氧化铪或氮氧化铪去除工艺之后残留在处理系统中的残余铪副产物的溶解，并从处理系统中排出氯化铪产物。

10. 发明授权

US07202186B2 Method of forming uniform ultra-thin oxynitride layers 有权
标题翻译：形成均匀的超薄氧氮化物层的方法
公开(公告)号：US07202186B2
公开(公告)日：2007-04-10
申请号：US10630970
申请日：2003-07-31
申请人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
发明人： David L O'Meara , Cory Wajda , Anthony Dip , Michael Toeller , Toshihara Furukawa , Kristen Scheer , Alessandro Callegari , Fred Buehrer , Sufi Zafar , Evgeni Gousev , Anthony Chou , Paul Higgins
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , C23C16/308 , H01L21/0214 , H01L21/02238 , H01L21/02249 , H01L21/02255 , H01L21/28202 , H01L21/3144 , H01L21/31604 , H01L21/31616 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31662 , H01L21/67098 , H01L29/513 , H01L29/517 , H01L29/518
摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.
摘要翻译：使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。处理可以使用间歇式处理室或单晶片处理室进行。

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