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1. 发明授权

US5336323A Apparatus for preparing wallpaper for application 失效
标题翻译：用于制作应用壁纸的装置
公开(公告)号：US5336323A
公开(公告)日：1994-08-09
申请号：US894589
申请日：1992-06-05
申请人： David Cotton , Adelbert H. Richards, III , James E. Harris
发明人： David Cotton , Adelbert H. Richards, III , James E. Harris
IPC分类号： B44C7/04 , B05C3/02
CPC分类号： B44C7/04 , Y10S118/17
摘要： Wallpaper dispenser for automatically hydrating a film of glue pre-applied to one side of a roll of wallpaper. The dispenser includes a reservoir having a roll of wallpaper rotatably supported thereover and a roller for guiding the wallpaper within a quantity of water contained within the reservoir. A ramp is provided for cutting the wallpaper and includes a cutting ridge along which a cutting member is drawn to cut the wallpaper perpendicular to the length thereof. A tape measure and means for securing the tape measure adjacent the ridge are provided to indicate the point, forwardly of the ridge, adjacent which the forward margin of the wallpaper should be positioned. A slidable member is provided to automatically align the pattern on one strip of wallpaper with the same pattern on a previously cut strip when the strips are positioned in laterally adjacent relation and with the top margins thereof in alignment.
摘要翻译：壁纸分配器，用于自动水化预先施加到一卷壁纸一侧的胶水胶片。分配器包括具有可旋转地支撑在其上的壁纸卷的储存器和用于在包含在储存器内的一定量的水中引导壁纸的辊。提供了用于切割壁纸的斜面，并且包括切割脊，沿着该切割脊，绘制切割构件以垂直于其长度切割壁纸。提供了用于固定邻近脊的卷尺的卷尺和装置，以指示相对于壁的前边缘应该定位的相邻的脊的向前的点。提供了一种可滑动构件，用于当条被定位成横向相邻的关系并且其顶部边缘对准时，在先前切割的条带上自动将一个壁纸条上的图案与相同的图案对准。

2. 外观设计

USD335985S Tray for soaking, measuring and cutting wallpaper 失效
公开(公告)号：USD335985S
公开(公告)日：1993-06-01
申请号：US519568
申请日：1990-05-07
申请人： David Cotton
设计人： David Cotton

3. 发明授权

US11377852B1 Embed apparatus 有权
公开(公告)号：US11377852B1
公开(公告)日：2022-07-05
申请号：US16684306
申请日：2019-11-14
申请人： David Cotton
发明人： David Cotton
IPC分类号： E04C5/08 , E04C3/293 , G09F23/00 , E04C5/01
摘要： The present disclosure is directed to an apparatus embeddable in a surface. Such surfaces may be formed from any material known in the art of construction, such as, but not limited to, concrete, asphalt, composite rubber, or mud. The apparatus may include a graphical element for display. The apparatus may include frames supporting the graphical element. The frames may include trusses disposed between and upper and a lower surface of the frames. The frame may further include one or more tabs at the upper surface to provide clearance between the upper surface and the graphic element.

4. 发明授权

US06177829B1 Device for improving the switching efficiency of an integrated circuit charge pump 有权
标题翻译：用于提高集成电路电荷泵的开关效率的装置
公开(公告)号：US06177829B1
公开(公告)日：2001-01-23
申请号：US09196335
申请日：1998-11-19
申请人： Roy Clifton Jones, III , Wayne T. Chen , David Cotton , Baoson Nguyen
发明人： Roy Clifton Jones, III , Wayne T. Chen , David Cotton , Baoson Nguyen
IPC分类号： G05F302
CPC分类号： H02M3/073
摘要： A charge pump uses switching transistors including a PMOS transistor (P1), a first transistor (N1), and a second transistor (N2) instead of diodes (D1, D2) to control the transfer of charge from a pump capacitor (14) to a storage capacitor (20). The voltage (60) at the storage capacitor (20) is applied to a level shifter (13) and to the source of the PMOS transistor (P1) which, in turn, biases the first transistor (N1) during low state of an oscillating waveform (30B). A supply rail (140) charges the pump capacitor (14) when the first transistor (N1) is in its active region during the low state of the oscillating waveform (30B) and turns OFF during the high state of the waveform (30B) causing the charge on the pump capacitor (14) to be transferred to the storage capacitor (20). The level shifter (13) is used to synchronize the oscillating waveform (30B) so that no charge is lost from the pump capacitor (14) back to the supply and minimal charge is conducted through a parasitic diode (55).
摘要翻译：电荷泵使用包括PMOS晶体管（P1），第一晶体管（N1）和第二晶体管（N2）的开关晶体管代替二极管（D1，D2），以控制从泵浦电容器（14）到存储电容器（20）。在存储电容器（20）处的电压（60）被施加到电平移位器（13）和PMOS晶体管（P1）的源极，PMOS晶体管（P1）进而在低振荡状态期间偏置第一晶体管（N1）波形（30B）。当振荡波形（30B）的低状态期间第一晶体管（N1）处于其有源区域时，供电轨（140）对泵电容器（14）充电，并且在波形（30B）的高状态期间断开泵电容器（14）上的电荷被传送到存储电容器（20）。电平移位器（13）用于使振荡波形（30B）同步，使得没有电荷从泵浦电容器（14）流回电源，并且最小电荷通过寄生二极管（55）传导。

5. 外观设计

USD902005S1 Door locking device 有权
公开(公告)号：USD902005S1
公开(公告)日：2020-11-17
申请号：US29660713
申请日：2018-08-22
申请人： David Cotton
设计人： David Cotton
摘要： FIG. 1 is a perspective view of the first embodiment of the door locking device;
FIG. 2 is a top plan view of the first embodiment of the door locking device;
FIG. 3 is a bottom plan view of the first embodiment of the door locking device;
FIG. 4 is a side elevation of the first embodiment of the door locking device;
FIG. 5 is a second side elevation of the first embodiment of the door locking device;
FIG. 6 is a front elevation of the first embodiment of the door locking device;
FIG. 7 is a rear elevation of the first embodiment of the door locking device;
FIG. 8 is a perspective view of the second embodiment of the door locking device;
FIG. 9 is a top plan of the second embodiment of the door locking device;
FIG. 10 is a bottom plan of the second embodiment of the door locking device;
FIG. 11 is a side elevation of the second embodiment of the door locking device;
FIG. 12 is a second side elevation of the second embodiment of the door locking device;
FIG. 13 is a front elevation of the second embodiment of the door locking device;
FIG. 14 is a rear elevation of the second embodiment of the door locking device;
FIG. 15 is a perspective view of the first embodiment of the door locking device in implementation and in an open state;
FIG. 16 is a perspective view of the first embodiment of the door locking device in implementation and in a closed state;
FIG. 17 is a perspective view of the second embodiment of the door locking device in implementation and in an open state; and,
FIG. 18 is a perspective view of the second embodiment of the door locking device in implementation and in a closed state.
The broken-lines shown in the figures depict portions of the door locking device that form no part of the claimed design.

6. 发明申请

US20190381376A1 MAINTENANCE GOLF DEVICES 审中-公开
公开(公告)号：US20190381376A1
公开(公告)日：2019-12-19
申请号：US16415387
申请日：2019-05-17
申请人： David Cotton
发明人： David Cotton
IPC分类号： A63B57/10 , A63B47/04 , A63B57/20 , A63B57/00
摘要： A golf tee, golf ball marker holder, golf ball brush, and golf ball positioning tool are provided. The tee includes first, second and third legs extending from a body to form a tripod base. The golf ball brush includes a body in the form of a golf ball having a dimpled surface. An attachment member and a plurality of bristles extend outwardly from the dimpled surface. The marker holder includes an S-shaped flat body having a first side and a second side. The first side includes a receiving slot configured to removably receive a golf ball marker. The golf ball positioning tool includes an elongated body and first and second cupping or gripping members extending from the elongated body. The first and second cupping members may be configured to simultaneously contact and grasp a golf ball and a tee when in a closed configuration.

7. 发明授权

US07484262B2 Device for cleaning golf club heads and golf balls 有权
标题翻译：用于清洁高尔夫球杆头和高尔夫球的装置
公开(公告)号：US07484262B2
公开(公告)日：2009-02-03
申请号：US10856875
申请日：2004-06-01
申请人： David Cotton
发明人： David Cotton
IPC分类号： A63B47/04 , A63B57/00
CPC分类号： A63B47/04 , A63B57/60
摘要： A device for cleaning golf balls and golf club heads, said device able to be releasably attached to a golf cart or worn or carried by a person playing golf. The device includes a generally rectangular sack having first and second opposed shorter edges and first and second opposed longer edges, the sack further comprised of first and second flexible panels joined along the outer edges thereof and enclosing an interior compartment located proximate to a shorter second edge thereof. An opening with fastener is located on the first panel over the interior compartment. A liquid impervious container is located within the interior compartment and includes an opening with surrounding fastener on a middle wall thereof. The opening of the container is co-aligned with the opening of the first panel. A flexible absorbent panel and flexible mesh panel are stored within the container, the flexible mash panel folded inside the absorbent panel. The absorbent panel contains a quantity of cleaning solution that dissolves dirt and debris adhered to the exterior surface of a golf ball and golf club head. The mesh panel is further comprised of a network of elongate arms and intervening spaces, the elongate arms providing a cutting edge, which in conjunction with the cleaning solution remove dirt and debris from a golf ball or golf club head when said ball or head are inserted through the co-aligned openings and into the folded mesh panel stored within the container.
摘要翻译：一种用于清洁高尔夫球和高尔夫球杆头的装置，所述装置能够可释放地附接到高尔夫球车，或由打高尔夫球的人穿着或携带。该装置包括具有第一和第二相对的较短边缘以及第一和第二相对较长边缘的大致矩形袋，该袋还包括沿着其外边缘连接的第一和第二柔性板，并且包围位于较短第二边缘附近的内部隔室其中。具有紧固件的开口位于内部隔室上的第一面板上。液体不可渗透的容器位于内部隔室内，并且包括在其中间壁上具有周围紧固件的开口。容器的开口与第一面板的开口共同对准。柔性吸收性面板和柔性网眼面板被储存在容器内，柔性的捣碎面板折叠在吸收性面板的内部。吸收性面板包含一定数量的清洁溶液，其可溶解附着到高尔夫球和高尔夫球杆头的外表面上的污垢和碎屑。网格面板还包括细长臂和中间空间的网络，细长臂提供切割边缘，该切割边缘与清洁溶液结合，当所述球体或头部被插入时，从高尔夫球或高尔夫球杆头移除灰尘和碎屑通过共同对齐的开口并进入存储在容器内的折叠的网状面板。

8. 发明授权

US5859456A Multiple transistor integrated circuit with thick copper interconnect 失效
标题翻译：具有厚铜互连的多晶体管集成电路
公开(公告)号：US5859456A
公开(公告)日：1999-01-12
申请号：US711138
申请日：1996-09-09
申请人： Taylor R. Efland , David Cotton , Dale J. Skelton
发明人： Taylor R. Efland , David Cotton , Dale J. Skelton
IPC分类号： H01L21/822 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/088 , H01L29/417 , H01L29/78 , H01L29/866 , H01L27/08
CPC分类号： H01L29/7835 , H01L29/41758 , H01L29/7801
摘要： An interconnection structure and method for a multiple transistor integrated circuit power device is disclosed. A power integrated circuit is formed of a plurality of source and drain diffusion regions to be coupled together to form the source and drain of multiple LDMOS transistors. Each diffusion region has a first metal layer stripe formed over it and in electrical contact with it. A second metal layer conductor is formed over a plurality of the first metal layer stripes, and selectively contacts the first metal layer stripes to form source and drain busses. Polysilicon gate busses are provided as well. A thick third metal layer is then formed over each second metal layer bus, either physically contacting it or selectively electrically contacting it. The thick third level metal is fabricated of a highly conductive material, such as copper. The resulting on resistance for the transistors on the integrated circuit is substantially reduced by the use of the thick third metal layer. Current debiasing and electromigration problems of the prior art are reduced or eliminated. A seven transistor integrated circuit formed from power transistors and incorporating the invention is described. Other devices, systems and methods are also disclosed.
摘要翻译：公开了一种用于多晶体管集成电路功率器件的互连结构和方法。功率集成电路由多个源极和漏极扩散区域形成以耦合在一起以形成多个LDMOS晶体管的源极和漏极。每个扩散区具有形成在其上并与其电接触的第一金属层条纹。第二金属层导体形成在多个第一金属层条纹上，并且选择性地接触第一金属层条纹以形成源极和漏极总线。也提供多晶硅栅母线总线。然后在每个第二金属层母线上形成厚的第三金属层，或者物理地接触它或选择性地电接触它。厚的第三级金属由诸如铜的高导电材料制成。通过使用厚的第三金属层，集成电路上的晶体管的导通电阻大大降低。减少或消除了现有技术的当前的去噪和电迁移问题。描述了由功率晶体管形成并结合本发明的七晶体管集成电路。还公开了其他装置，系统和方法。

9. 发明授权

US5728594A Method of making a multiple transistor integrated circuit with thick copper interconnect 失效
标题翻译：制造具有厚铜互连的多晶体管集成电路的方法
公开(公告)号：US5728594A
公开(公告)日：1998-03-17
申请号：US474621
申请日：1995-06-07
申请人： Taylor R. Efland , David Cotton , Dale J. Skelton
发明人： Taylor R. Efland , David Cotton , Dale J. Skelton
IPC分类号： H01L21/822 , H01L21/336 , H01L21/8234 , H01L27/04 , H01L27/088 , H01L29/417 , H01L29/78 , H01L29/866 , H01L21/265
CPC分类号： H01L29/7835 , H01L29/41758 , H01L29/7801
摘要： An interconnection structure and method for a multiple transistor integrated circuit power device is disclosed. A power integrated circuit is formed of a plurality of source and drain diffusion regions to be coupled together to form the source and drain of multiple LDMOS transistors. Each diffusion region has a first metal layer stripe formed over it and in electrical contact with it. A second metal layer conductor is formed over a plurality of the first metal layer stripes, and selectively contacts the first metal layer stripes to form source and drain busses. Polysilicon gate busses are provided as well. A thick third metal layer is then formed over each second metal layer bus, either physically contacting it or selectively electrically contacting it. The thick third level metal is fabricated of a highly conductive material, such as copper. The resulting on resistance for the transistors on the integrated circuit is substantially reduced by the use of the thick third metal layer. Current debiasing and electromigration problems of the prior art are reduced or eliminated. A seven transistor integrated circuit formed from power transistors and incorporating the invention is described. Other devices, systems and methods are also disclosed.
摘要翻译：公开了一种用于多晶体管集成电路功率器件的互连结构和方法。功率集成电路由多个源极和漏极扩散区域形成以耦合在一起以形成多个LDMOS晶体管的源极和漏极。每个扩散区具有形成在其上并与其电接触的第一金属层条纹。第二金属层导体形成在多个第一金属层条纹上，并且选择性地接触第一金属层条纹以形成源极和漏极总线。也提供多晶硅栅母线总线。然后在每个第二金属层母线上形成厚的第三金属层，或者物理地接触它或选择性地电接触它。厚的第三级金属由诸如铜的高导电材料制成。通过使用厚的第三金属层，集成电路上的晶体管的导通电阻大大降低。减少或消除了现有技术的当前的去噪和电迁移问题。描述了由功率晶体管形成并结合本发明的七晶体管集成电路。还公开了其他装置，系统和方法。

10. 发明授权

US5719423A Isolated power transistor 失效
标题翻译：隔离功率晶体管
公开(公告)号：US5719423A
公开(公告)日：1998-02-17
申请号：US697661
申请日：1996-08-28
申请人： James R. Todd , David Cotton , Roy Clifton Jones, III
发明人： James R. Todd , David Cotton , Roy Clifton Jones, III
IPC分类号： H01L21/336 , H01L21/761 , H01L29/08 , H01L29/10 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7816 , H01L21/761 , H01L29/1079 , H01L29/66659 , H01L29/66674 , H01L29/7801 , H01L29/0847 , H01L29/086 , H01L29/0878
摘要： A high current power transistor is provided that comprises a drain region that includes a highly-doped drain region (54) and a lightly-doped drain region (50). The channel region (52) is activated by a gate conductor (32). The channel region separates the lightly-doped drain region (50) from a D-well region (40). A sidewall insulator body (44) is used to form the lightly-doped drain region (50) and the lightly-doped drain region (54). The transistor is formed in an active region (20) which comprises a portion of an n-type epitaxial layer (12) formed outwardly from a p-type substrate (10). The isolation structures (14) and (16) as well as the epitaxial layer (12) provides for a transistor that can be used in both source follower and common source configurations.
摘要翻译：提供了一种高电流功率晶体管，其包括包括高掺杂漏极区（54）和轻掺杂漏极区（50）的漏极区。通道区域（52）由栅极导体（32）激活。沟道区域将轻掺杂漏区（50）与D阱区（40）分离。侧壁绝缘体（44）用于形成轻掺杂漏极区（50）和轻掺杂漏极区（54）。晶体管形成在有源区（20）中，该有源区（20）包括从p型衬底（10）向外形成的n型外延层（12）的一部分。隔离结构（14）和（16）以及外延层（12）提供可用于源极跟随器和公共源配置的晶体管。

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