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1. 发明申请

US20120329246A1 ETCHING A LASER-CUT SEMICONDUCTOR BEFORE DICING A DIE ATTACH FILM (DAF) OR OTHER MATERIAL LAYER 失效
标题翻译：在DIE连接膜（DAF）或其他材料层之前刻蚀激光切割半导体
公开(公告)号：US20120329246A1
公开(公告)日：2012-12-27
申请号：US13168020
申请日：2011-06-24
申请人： Daragh S. Finn
发明人： Daragh S. Finn
IPC分类号： H01L21/78
CPC分类号： H01L21/67207 , H01L21/78
摘要： Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.
摘要翻译：通过激光切割和蚀刻的组合来改善半导体芯片断裂强度和屈服强度，随后将下层材料（例如芯片附着膜（DAF）或金属）切割）。可以使用第二激光工艺或第二蚀刻工艺来切割下面的材料层。在切割下层材料之前执行侧壁蚀刻在侧壁蚀刻过程中减少或防止切口侧壁上的碎屑。薄晶片切割激光系统可以包括单个激光处理头解决方案或双激光处理头解决方案以满足生产量要求。

2. 发明授权

US08598490B2 Methods and systems for laser processing a workpiece using a plurality of tailored laser pulse shapes 失效
标题翻译：使用多个定制的激光脉冲形状激光加工工件的方法和系统
公开(公告)号：US08598490B2
公开(公告)日：2013-12-03
申请号：US13076810
申请日：2011-03-31
申请人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
发明人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
IPC分类号： H01L21/78
CPC分类号： H01S3/102 , B23K26/0622 , B23K26/064 , B23K26/389 , B23K26/40 , B23K26/705 , B23K2103/172 , B23K2103/50 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/27436 , H01L2224/2919 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01S3/0057 , H01S3/1305 , H01L2924/00 , H01L2924/3512
摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.
摘要翻译：定制的激光脉冲形状用于加工工件。例如，半导体器件晶片在芯片附着膜（DAF）上的激光切割可以使用不同的定制的激光脉冲形状，用于将器件层划分到半导体衬底，切割半导体衬底，切割下面的DAF和/或后处理的上模边缘以增加冲模强度。不同的单形激光脉冲序列可以用于激光束在划线上的相应配方步骤或通过。在另一个实施例中，使用包括彼此不同的至少两个激光脉冲的混合形状的激光脉冲串，划线半导体器件晶片仅包括激光束沿着划线的单次通过。另外，或者在其他实施例中，可以选择一个或多个定制的脉冲形状并将其提供给工件。选择可以基于传感器反馈。

3. 发明申请

US20120158169A1 CLOSED-LOOP SILICON ETCHING CONTROL METHOD AND SYSTEM 失效
标题翻译：闭环硅蚀刻控制方法与系统
公开(公告)号：US20120158169A1
公开(公告)日：2012-06-21
申请号：US12970483
申请日：2010-12-16
申请人： Daragh S. Finn , Andrew E. Hooper , A. Grey Lerner
发明人： Daragh S. Finn , Andrew E. Hooper , A. Grey Lerner
IPC分类号： G06F19/00
CPC分类号： H01L21/67253 , H01L22/12 , H01L22/26
摘要： A closed-loop etching control system controls exposure of a silicon workpiece to a spontaneous etchant. The system determines an amount of material to be removed from the silicon workpiece, based on metrology information corresponding to the silicon workpiece. The mass of the material to be removed is calculated, and the silicon workpiece is exposed to the spontaneous etchant to remove the material. The system monitors a change in mass of the silicon workpiece caused by exposure of the silicon workpiece to the spontaneous etchant to determine when the amount of the material has been removed from the silicon workpiece. Exposure of the silicon workpiece to the spontaneous etchant is stopped when the change in the mass of the silicon workpiece indicates that the amount of the material has been removed.
摘要翻译：闭环蚀刻控制系统控制硅工件对自发蚀刻剂的曝光。该系统基于与硅工件相对应的计量信息来确定要从硅工件移除的材料的量。计算要去除的材料的质量，并将硅工件暴露于自发蚀刻剂以除去材料。该系统监测由硅工件暴露于自发蚀刻剂引起的硅工件的质量变化，以确定何时材料的量已经从硅工件移除。当硅工件的质量变化表明材料的量已经被去除时，硅工件暴露于自发蚀刻剂被停止。

4. 发明申请

US20110298156A1 METHODS AND SYSTEMS FOR LASER PROCESSING A WORKPIECE USING A PLURALITY OF TAILORED LASER PULSE SHAPES 失效
标题翻译：激光加工工艺的方法和系统使用多种激光激光脉冲形状
公开(公告)号：US20110298156A1
公开(公告)日：2011-12-08
申请号：US13076810
申请日：2011-03-31
申请人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
发明人： Andrew Hooper , David Barsic , Kelly J. Bruland , Daragh S. Finn , Lynn Sheehan , Xiaoyuan Peng , Yasu Osako , Jim Dumestre , William J. Jordens
IPC分类号： B29C35/08
CPC分类号： H01S3/102 , B23K26/0622 , B23K26/064 , B23K26/389 , B23K26/40 , B23K26/705 , B23K2103/172 , B23K2103/50 , H01L21/6836 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2224/27436 , H01L2224/2919 , H01L2224/83191 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01055 , H01L2924/01056 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/0665 , H01L2924/12043 , H01L2924/13091 , H01L2924/14 , H01S3/0057 , H01S3/1305 , H01L2924/00 , H01L2924/3512
摘要： Tailored laser pulse shapes are used for processing workpieces. Laser dicing of semiconductor device wafers on die-attach film (DAF), for example, may use different tailored laser pulse shapes for scribing device layers down to a semiconductor substrate, dicing the semiconductor substrate, cutting the underlying DAF, and/or post processing of the upper die edges to increase die break strength. Different mono-shape laser pulse trains may be used for respective recipe steps or passes of a laser beam over a scribe line. In another embodiment, scribing a semiconductor device wafer includes only a single pass of a laser beam along a scribe line using a mixed-shape laser pulse train that includes at least two laser pulses that are different than one another. In addition, or in other embodiments, one or more tailored pulse shapes may be selected and provided to the workpiece on-the-fly. The selection may be based on sensor feedback.
摘要翻译：定制的激光脉冲形状用于加工工件。例如，半导体器件晶片在芯片附着膜（DAF）上的激光切割可以使用不同的定制的激光脉冲形状，用于将器件层划分到半导体衬底，切割半导体衬底，切割下面的DAF和/或后处理的上模边缘以增加冲模强度。不同的单形激光脉冲序列可以用于激光束在划线上的相应配方步骤或通过。在另一个实施例中，划线半导体器件晶片仅使用包括彼此不同的至少两个激光脉冲的混合形激光脉冲串沿着划线的激光束的单次通过。另外，或者在其他实施例中，可以选择一个或多个定制的脉冲形状并将其提供给工件。选择可以基于传感器反馈。

5. 发明授权

US08673741B2 Etching a laser-cut semiconductor before dicing a die attach film (DAF) or other material layer 失效
公开(公告)号：US08673741B2
公开(公告)日：2014-03-18
申请号：US13168020
申请日：2011-06-24
申请人： Daragh S. Finn
发明人： Daragh S. Finn
IPC分类号： H01L21/00
CPC分类号： H01L21/67207 , H01L21/78
摘要： Semiconductor die break strength and yield are improved with a combination of laser dicing and etching, which are followed by dicing an underlying layer of material, such as die attach film (DAF) or metal. A second laser process or a second etch process may be used for dicing of the underlying layer of material. Performing sidewall etching before cutting the underlying layer of material reduces or prevents debris on the kerf sidewalls during the sidewall etching process. A thin wafer dicing laser system may include either a single laser process head solution or a dual laser process head solution to meet throughput requirements.

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