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    • 2. 发明授权
    • Yield improvement in silicon-germanium epitaxial growth
    • 硅锗外延生长的产量提高
    • US07118995B2
    • 2006-10-10
    • US10709644
    • 2004-05-19
    • Mark D. DupuisWade J. HodgeDaniel T. KellyRyan W. Wuthrich
    • Mark D. DupuisWade J. HodgeDaniel T. KellyRyan W. Wuthrich
    • H01L21/20
    • H01L21/02381H01L21/0245H01L21/02532H01L21/0262H01L21/02639
    • A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
    • 一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。 半导体结构的制造以单晶硅(Si)层开始。 然后,在单晶Si层中形成第一和第二浅沟槽隔离(STI)区域。 STI区域夹持并限定第一单晶Si区域。 接下来,硅锗(SiGe)混合物以SiGe沉积条件沉积在结构的顶部,以便生长(i)第二单晶硅区域从第一单晶硅区域的顶表面生长, (ii)分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。 通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内,可以确定满足SiGe沉积条件以进行大规模生产。
    • 3. 发明授权
    • Yield improvement in silicon-germanium epitaxial growth
    • 硅锗外延生长的产量提高
    • US07413967B2
    • 2008-08-19
    • US11468030
    • 2006-08-29
    • Mark D. DupuisWade J. HodgeDaniel T. KellyRyan W. Wuthrich
    • Mark D. DupuisWade J. HodgeDaniel T. KellyRyan W. Wuthrich
    • H01L21/20
    • H01L21/02381H01L21/0245H01L21/02532H01L21/0262H01L21/02639
    • A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
    • 一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。 半导体结构的制造以单晶硅(Si)层开始。 然后,在单晶Si层中形成第一和第二浅沟槽隔离(STI)区域。 STI区域夹持并限定第一单晶Si区域。 接下来,硅锗(SiGe)混合物以SiGe沉积条件沉积在结构的顶部,以便生长(i)第二单晶硅区域从第一单晶硅区域的顶表面生长, (ii)分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。 通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内,可以确定满足SiGe沉积条件以进行大规模生产。