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    • 2. 发明授权
    • Method of making vertically stacked bipolar semiconductor structure
    • 制造垂直堆叠双极半导体结构的方法
    • US5426059A
    • 1995-06-20
    • US249757
    • 1994-05-26
    • Daniel G. Queyssac
    • Daniel G. Queyssac
    • H01L21/331H01L21/332H01L21/8222H01L29/732H01L49/00H01L21/265H01L21/302
    • H01L29/66303H01L21/8222H01L29/66363H01L29/732
    • A vertical bipolar structure is fabricated utilizing high energy implant techniques. An epitaxial substrate (10) is first formed of the first conductivity material. A deep implant is formed in the substrate to a first level to form a layer (12) of the first conductivity type. Thereafter, a second implant at a slightly lower energy level is made to provide a second conductivity type layer (14) on top of the layer (12). A third implant of a lower energy of the first conductivity type material is then made to form an even shallower depth layer (16). This is followed by a final lower energy implant to form a second conductivity type layer (18) above the layer (16). This therefore results in a vertical stack of alternating conductivity type layers. The substrate is then patterned and etched to form vertical structures (26) which are disposed in an array with trenches aligned along the columns and the rows. An insulating material is then disposed in the trenches and a portion of the insulating layer proximate to the sidewalls of one of the rows of trenches etched downward to expose the second layer proximate to the deepest layer and then a layer of polysilicon (36) disposed and etched to form buried contacts (32) to the layer (14).
    • 使用高能量植入技术制造垂直双极结构。 首先由第一导电材料形成外延衬底(10)。 在衬底中形成深度注入到第一层以形成第一导电类型的层(12)。 此后,制造稍低于能级的第二植入物以在层(12)的顶部上提供第二导电类型层(14)。 然后制造第一导电类型材料的较低能量的第三植入物以形成更浅的深度层(16)。 之后是最终的较低能量注入,以在层(16)上方形成第二导电类型层(18)。 因此,这导致交替导电型层的垂直堆叠。 然后对衬底进行构图和蚀刻以形成垂直结构(26),其被布置成具有沿着列和行排列的沟槽的阵列。 然后将绝缘材料设置在沟槽中,并且绝缘层的靠近其中一行沟槽的侧壁的一部分被向下蚀刻以暴露第二层,接近最深层,然后设置一层多晶硅(36) 蚀刻以形成到层(14)的掩埋触点(32)。