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1. 发明授权

US09691459B2 Semiconductor memory device including shorted variable resistor element of memory cell 有权
公开(公告)号：US09691459B2
公开(公告)日：2017-06-27
申请号：US15249845
申请日：2016-08-29
申请人： Bo-young Seo , Suk-soo Pyo , Gwan-hyeob Koh , Yong-kyu Lee , Dae-shik Kim
发明人： Bo-young Seo , Suk-soo Pyo , Gwan-hyeob Koh , Yong-kyu Lee , Dae-shik Kim
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C7/14 , G11C11/1673 , G11C13/004 , G11C29/028 , G11C29/50008 , G11C2013/0054 , G11C2029/4402
摘要： A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected.

2. 发明申请

US20160163254A1 Magnetic Random Access Memory (MRAM)-Based Frame Buffering Apparatus, Display Driving Apparatus and Display Apparatus Including the Same 有权
标题翻译：基于磁性随机存取存储器（MRAM）的帧缓冲设备，包括其的显示驱动装置和显示装置
公开(公告)号：US20160163254A1
公开(公告)日：2016-06-09
申请号：US14957970
申请日：2015-12-03
申请人： Choong-jae Lee , Gwan-hyeob Koh , Dae-shik Kim , Bo-young Seo
发明人： Choong-jae Lee , Gwan-hyeob Koh , Dae-shik Kim , Bo-young Seo
IPC分类号： G09G3/20 , G06T1/60
CPC分类号： G06T1/60 , G06F12/00 , G06F12/0238 , G09G2330/021 , G09G2340/0435 , G09G2360/12 , G09G2360/18 , G11C5/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1695
摘要： Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.
摘要翻译：提供了基于磁性随机存取存储器（MRAM）的帧缓冲装置，其可以通过使用像素自刷新（PSR）方法来减小其尺寸和功耗。基于MRAM的帧缓冲装置包括包括磁随机存取存储器（MRAM）的帧缓冲存储器。帧缓冲存储器存储至少一个帧数据。基于MRAM的帧缓冲装置还包括被配置为检测外部磁场的磁场传感器; 以及帧缓冲器控制器，被配置为根据所检测的外部磁场的强度来控制所述至少一帧帧数据的存储。

3. 发明授权

US08871313B2 Optical sheet 有权
标题翻译：光学片
公开(公告)号：US08871313B2
公开(公告)日：2014-10-28
申请号：US12921079
申请日：2009-03-06
申请人： Kyoung Hwa Kim , Dae Shik Kim , Kyoung Jong Kim
发明人： Kyoung Hwa Kim , Dae Shik Kim , Kyoung Jong Kim
IPC分类号： C09K19/00 , B32B3/00 , G02B5/04 , G02B1/04 , F21V5/02
CPC分类号： G02B1/04 , F21V5/02 , G02B5/045 , Y10T428/1036 , Y10T428/24479 , Y10T428/24612
摘要： The present invention relates to an optical sheet for use in a liquid crystal display. The optical sheet of the present invention allows for ease of handling, reduces defective proportions and manufacturing costs, improves throughput, and prevents the deterioration of luminance attributable to the damage of the optical sheet.
摘要翻译：本发明涉及一种用于液晶显示器的光学片。本发明的光学片能够容易地处理，减少缺陷比例和制造成本，提高生产量，并且防止由于光学片的损坏引起的亮度的劣化。

4. 发明申请

US20120314401A1 LUMINANCE ENHANCEMENT FILM AND BACKLIGHT UNIT INCLUDING THE SAME 有权
标题翻译：发光增强膜和背光单元，包括它们
公开(公告)号：US20120314401A1
公开(公告)日：2012-12-13
申请号：US13578662
申请日：2011-12-29
申请人： A Reum Han , Dae Shik Kim , Deug Soo Ryu , Jeong Yeol Moon
发明人： A Reum Han , Dae Shik Kim , Deug Soo Ryu , Jeong Yeol Moon
IPC分类号： G02B5/02 , G09F13/04
CPC分类号： G02B1/04 , G02B5/0242 , G02B5/3083
摘要： Disclosed is a luminance enhancement film which is suitable for use in a display and includes a multilayered thin film and a uniaxially drawn film formed on one surface of the multilayered thin film.
摘要翻译：公开了一种适用于显示器的亮度增强膜，包括形成在多层薄膜的一个表面上的多层薄膜和单轴拉伸膜。

5. 发明申请

US20110008551A1 OPTICAL SHEET 有权
标题翻译：光学片
公开(公告)号：US20110008551A1
公开(公告)日：2011-01-13
申请号：US12921079
申请日：2009-03-06
申请人： Kyoung Hwa Kim , Dae Shik Kim , Kyoung Jong Kim
发明人： Kyoung Hwa Kim , Dae Shik Kim , Kyoung Jong Kim
IPC分类号： B32B3/00 , B32B27/00 , C09K19/02 , C08G77/00 , C08F18/20
CPC分类号： G02B1/04 , F21V5/02 , G02B5/045 , Y10T428/1036 , Y10T428/24479 , Y10T428/24612
摘要： The present invention relates to an optical sheet for use in a liquid crystal display. The optical sheet of the present invention allows for ease of handling, reduces defective proportions and manufacturing costs, improves throughput, and prevents the deterioration of luminance attributable to the damage of the optical sheet.
摘要翻译：本发明涉及一种用于液晶显示器的光学片。本发明的光学片能够容易地处理，减少缺陷比例和制造成本，提高生产量，并且防止由于光学片的损坏引起的亮度的劣化。

6. 发明授权

US07791142B2 Electrostatic discharge protection diode 有权
标题翻译：静电放电保护二极管
公开(公告)号：US07791142B2
公开(公告)日：2010-09-07
申请号：US12291087
申请日：2008-11-06
申请人： Dae-shik Kim , Kyoung-mok Son
发明人： Dae-shik Kim , Kyoung-mok Son
IPC分类号： H01L23/62
CPC分类号： H01L27/0255
摘要： Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.
摘要翻译：提供一种静电放电（ESD）保护二极管，包括：在半导体衬底中由第一导电性形成的阱; 在所述阱中由第二导电性形成的有源区，包括沿第一方向延伸的多个第一有源线; 所述第一导电性的子区域包括在所述第一方向上延伸的多个第一子线，所述第一子线形成在所述阱中，被布置为围绕所述第一有源线的外部区域，并且与所述第一子线交替布置第一条活动线分离有源区域和子区域的器件隔离区域; 在活动区域中排成行的多个有源触点; 以及在所述子区域中排列成一排的多个子接触。

7. 发明申请

US20090273869A1 Electrostatic discharge protection diode 有权
标题翻译：静电放电保护二极管
公开(公告)号：US20090273869A1
公开(公告)日：2009-11-05
申请号：US12291087
申请日：2008-11-06
申请人： Dae-shik Kim , Kyoung-mok Son
发明人： Dae-shik Kim , Kyoung-mok Son
IPC分类号： H02H9/00
CPC分类号： H01L27/0255
摘要： Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.
摘要翻译：提供一种静电放电（ESD）保护二极管，包括：在半导体衬底中由第一导电性形成的阱; 在所述阱中由第二导电性形成的有源区，包括沿第一方向延伸的多个第一有源线; 所述第一导电性的子区域包括在所述第一方向上延伸的多个第一子线，所述第一子线形成在所述阱中，被布置为围绕所述第一有源线的外部区域，并且与所述第一子线交替布置第一条活动线分离有源区域和子区域的器件隔离区域; 在活动区域中排成行的多个有源触点; 以及在所述子区域中排列成一排的多个子接触。

8. 发明申请

US20180342669A1 METHOD OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR CHIP INCLUDING THE SAME 审中-公开
公开(公告)号：US20180342669A1
公开(公告)日：2018-11-29
申请号：US15856256
申请日：2017-12-28
申请人： Dae-Shik KIM , Jeong-Heon PARK , Gwan-Hyeob KOH
发明人： Dae-Shik KIM , Jeong-Heon PARK , Gwan-Hyeob KOH
IPC分类号： H01L43/12 , H01L43/08 , H01L43/02 , H01L27/22 , G11C11/16
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L29/41791 , H01L43/02 , H01L43/08
摘要： In a method of manufacturing an MRAM device, first and second lower electrodes may be formed on first and second regions, respectively, of a substrate. First and second MTJ structures having different switching current densities from each other may be formed on the first and second lower electrodes, respectively. First and second upper electrodes may be formed on the first and second MTJ structures, respectively.

9. 发明授权

US08426584B2 Methods and compounds useful in the synthesis of fused aminodihydrothiazine derivatives 有权
公开(公告)号：US08426584B2
公开(公告)日：2013-04-23
申请号：US13355030
申请日：2012-01-20
申请人： Branko Mitasev , Dae-Shik Kim , Kazuhiro Yoshizawa
发明人： Branko Mitasev , Dae-Shik Kim , Kazuhiro Yoshizawa
IPC分类号： C07D513/04 , C07D307/22 , C07D498/04
CPC分类号： C07D307/22 , C07D498/04 , C07D513/04
摘要： Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.

10. 发明申请

US20120190848A1 METHODS AND COMPOUNDS USEFUL IN THE SYNTHESIS OF FUSED AMINODIHYDROTHIAZINE DERIVATIVES 有权
标题翻译：合成氨基二氢卟吩衍生物的方法和化合物
公开(公告)号：US20120190848A1
公开(公告)日：2012-07-26
申请号：US13355030
申请日：2012-01-20
申请人： Branko Mitasev , Dae-Shik Kim , Huiming Zhang , Matthew J. Schnaderbeck , Christopher N. Farthing , Kazuhiro Yoshizawa
发明人： Branko Mitasev , Dae-Shik Kim , Huiming Zhang , Matthew J. Schnaderbeck , Christopher N. Farthing , Kazuhiro Yoshizawa
IPC分类号： C07D513/04 , C07D307/22 , C07D498/04
CPC分类号： C07D307/22 , C07D498/04 , C07D513/04
摘要： Provided are compounds and methods useful for the preparation of compounds useful as inhibitors of beta-site amyloid precursor protein (APP)-cleaving enzyme.
摘要翻译：提供了可用于制备可用作β-位淀粉样蛋白前体蛋白（APP）消除酶抑制剂的化合物的化合物和方法。

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