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1. 发明授权

US07791142B2 Electrostatic discharge protection diode 有权
标题翻译：静电放电保护二极管
公开(公告)号：US07791142B2
公开(公告)日：2010-09-07
申请号：US12291087
申请日：2008-11-06
申请人： Dae-shik Kim , Kyoung-mok Son
发明人： Dae-shik Kim , Kyoung-mok Son
IPC分类号： H01L23/62
CPC分类号： H01L27/0255
摘要： Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.
摘要翻译：提供一种静电放电（ESD）保护二极管，包括：在半导体衬底中由第一导电性形成的阱; 在所述阱中由第二导电性形成的有源区，包括沿第一方向延伸的多个第一有源线; 所述第一导电性的子区域包括在所述第一方向上延伸的多个第一子线，所述第一子线形成在所述阱中，被布置为围绕所述第一有源线的外部区域，并且与所述第一子线交替布置第一条活动线分离有源区域和子区域的器件隔离区域; 在活动区域中排成行的多个有源触点; 以及在所述子区域中排列成一排的多个子接触。

2. 发明申请

US20090273869A1 Electrostatic discharge protection diode 有权
标题翻译：静电放电保护二极管
公开(公告)号：US20090273869A1
公开(公告)日：2009-11-05
申请号：US12291087
申请日：2008-11-06
申请人： Dae-shik Kim , Kyoung-mok Son
发明人： Dae-shik Kim , Kyoung-mok Son
IPC分类号： H02H9/00
CPC分类号： H01L27/0255
摘要： Provided is an electrostatic discharge (ESD) protection diode including: a well formed of a first conductivity in a semiconductor substrate; an active region that is formed of a second conductivity in the well and includes a plurality of first active lines extending in a first direction; a sub-region of the first conductivity including a plurality of first sub-lines extending in the first direction, the first sub lines being formed in the well, arranged to surround an outer region of the first active lines, and arranged in alternation with the first active lines; a device isolation region separating the active regions and the sub-regions; a plurality of active contacts arranged in a row in the active regions; and a plurality of sub-contacts arranged in a row in the sub-region.
摘要翻译：提供一种静电放电（ESD）保护二极管，包括：在半导体衬底中由第一导电性形成的阱; 在所述阱中由第二导电性形成的有源区，包括沿第一方向延伸的多个第一有源线; 所述第一导电性的子区域包括在所述第一方向上延伸的多个第一子线，所述第一子线形成在所述阱中，被布置为围绕所述第一有源线的外部区域，并且与所述第一子线交替布置第一条活动线分离有源区域和子区域的器件隔离区域; 在活动区域中排成行的多个有源触点; 以及在所述子区域中排列成一排的多个子接触。

3. 发明授权

US09691459B2 Semiconductor memory device including shorted variable resistor element of memory cell 有权
公开(公告)号：US09691459B2
公开(公告)日：2017-06-27
申请号：US15249845
申请日：2016-08-29
申请人： Bo-young Seo , Suk-soo Pyo , Gwan-hyeob Koh , Yong-kyu Lee , Dae-shik Kim
发明人： Bo-young Seo , Suk-soo Pyo , Gwan-hyeob Koh , Yong-kyu Lee , Dae-shik Kim
IPC分类号： G11C11/16
CPC分类号： G11C11/161 , G11C7/14 , G11C11/1673 , G11C13/004 , G11C29/028 , G11C29/50008 , G11C2013/0054 , G11C2029/4402
摘要： A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected.

4. 发明申请

US20160163254A1 Magnetic Random Access Memory (MRAM)-Based Frame Buffering Apparatus, Display Driving Apparatus and Display Apparatus Including the Same 有权
标题翻译：基于磁性随机存取存储器（MRAM）的帧缓冲设备，包括其的显示驱动装置和显示装置
公开(公告)号：US20160163254A1
公开(公告)日：2016-06-09
申请号：US14957970
申请日：2015-12-03
申请人： Choong-jae Lee , Gwan-hyeob Koh , Dae-shik Kim , Bo-young Seo
发明人： Choong-jae Lee , Gwan-hyeob Koh , Dae-shik Kim , Bo-young Seo
IPC分类号： G09G3/20 , G06T1/60
CPC分类号： G06T1/60 , G06F12/00 , G06F12/0238 , G09G2330/021 , G09G2340/0435 , G09G2360/12 , G09G2360/18 , G11C5/02 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1695
摘要： Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.
摘要翻译：提供了基于磁性随机存取存储器（MRAM）的帧缓冲装置，其可以通过使用像素自刷新（PSR）方法来减小其尺寸和功耗。基于MRAM的帧缓冲装置包括包括磁随机存取存储器（MRAM）的帧缓冲存储器。帧缓冲存储器存储至少一个帧数据。基于MRAM的帧缓冲装置还包括被配置为检测外部磁场的磁场传感器; 以及帧缓冲器控制器，被配置为根据所检测的外部磁场的强度来控制所述至少一帧帧数据的存储。

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