会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • IC standard cell designed with embedded capacitors
    • IC标配电池设计嵌入式电容器
    • US5656834A
    • 1997-08-12
    • US662742
    • 1996-06-10
    • Claus D. GrzybOri K. Mizrahi-Shalom
    • Claus D. GrzybOri K. Mizrahi-Shalom
    • H01L27/02H01L29/78H01L27/10
    • H01L27/0207H01L27/0218
    • Integrated circuits running with high frequencies are a potential source for RFI (Radio Frequency Interference). To reduce RFI, on-chip dedoupling capacitors are included in the design. To gain maximum advantage of these decoupling capacitors, they should be placed close to drivers and flip-flops. In a standard cell design approach for fabrication of the ICs, capacitors are embedded below the power supply lines. These capacitors are put in special cells, called cap-cells, which are placed by the place and route software on either side of each row of standard cells. Thin oxide capacitors are preferred because they offer the largest capacitance per area. In addition, first and second metal above the capacitor are increased to form thick oxide capacitors that give additional capacitance.
    • 高频运行的集成电路是RFI(射频干扰)的潜在来源。 为了减少RFI,设计中包括片上去耦电容。 为了获得这些去耦电容器的最大优势,它们应放置在靠近驱动器和触发器的位置。 在用于制造IC的标准电池设计方法中,电容器嵌入在电源线之下。 这些电容器被放入被称为cap-cell的特殊单元格中,这些单元被放置在每一行标准单元两侧的位置和路径软件中。 薄氧化物电容器是优选的,因为它们提供每面积最大的电容。 此外,电容器上方的第一和第二金属增加以形成赋予额外电容的厚氧化物电容器。