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1. 发明申请

US20120049105A1 COMPOSITION WITH HEAT DISSIPATION PERFORMANCE OF CERAMICS 审中-公开
标题翻译：具有陶瓷散热性能的组合物
公开(公告)号：US20120049105A1
公开(公告)日：2012-03-01
申请号：US13214239
申请日：2011-08-22
申请人： CHUN-CHING HSIAO , Chiang-Chung Chang
发明人： CHUN-CHING HSIAO , Chiang-Chung Chang
IPC分类号： C09K5/00
CPC分类号： C09K5/14 , B22F2998/00 , C22C29/06 , C22C29/12 , C22C29/16 , C22C32/0015 , C22C32/0052 , C22C32/0068 , C22C1/1036
摘要： A composition with heat dissipation performance of ceramics includes ceramic particles that take a weight percentage of substantially 25%-90% of the composition, have a particle size substantially between 10-50 μm, and thermal conductivity λ≧25 W/m·K, the ceramic particles being subjected to surface activation treatment; and metal particles that take a weight percentage of substantially 75%-10% of the composition and have thermal conductivity λ≧50 W/m·K. The ceramic particles and the metal particles are subjected to heating under a non-oxidizing environment to a temperature greater than the melting point of the metal but below the melting point of the ceramic particles, so that the metal is molten to form a metal melt that surrounds and bonds the ceramic particles, and then pouring and casting are performed in a non-oxidizing environment. As such, the metal that possesses excellent thermal conduction capability is also imposed with excellent thermal radiation capability of the ceramics.
摘要翻译：具有陶瓷散热性能的组合物包括占组合物重量百分比大致为25％-90％的陶瓷颗粒，其粒径基本上在10-50μm之间，导热系数λ≥25W/ m·K，陶瓷颗粒进行表面活化处理; 和重量百分比为组合物基本上75％-10％并具有λ≥50W/ m·K的热导率的金属颗粒。将陶瓷颗粒和金属颗粒在非氧化环境下加热到大于金属的熔点但低于陶瓷颗粒的熔点的温度，使得金属熔融形成金属熔体，围绕并结合陶瓷颗粒，然后在非氧化环境中进行浇注和浇注。因此，具有优异的导热能力的金属也具有优异的陶瓷热辐射能力。

2. 发明申请

US20110140034A1 COMPOSITE FOR HEAT-DISSIPATING FILM 审中-公开
标题翻译：复合膜用于散热膜
公开(公告)号：US20110140034A1
公开(公告)日：2011-06-16
申请号：US13033567
申请日：2011-02-23
申请人： Chiang-Chung CHANG , Chun-Ching HSIAO
发明人： Chiang-Chung CHANG , Chun-Ching HSIAO
IPC分类号： C09K5/00
CPC分类号： C09K5/14
摘要： A composite for coating and sputtering a heat-dissipating film, wherein composite contains silicon carbide, resin, and dilute solvent which are mixed and blended to be capable of being coated, sputtered, and cured into a heat-dissipating film of a specific thickness. As such, the heat-dissipating performance could be conveniently enhanced. here is no need to rely on heat-sinking fins of large surface area. The production cost is reduced, recycling is easier, and the highly contaminating anodizing treatment could be avoided, while the robustness against erosion and harsh weather is still maintained.
摘要翻译：一种用于涂覆和溅射散热膜的复合材料，其中复合材料含有碳化硅，树脂和稀释溶剂，其混合并混合以能够被涂覆，溅射和固化成特定厚度的散热膜。因此，可以方便地提高散热性能。这里不用依赖大面积散热片。生产成本降低，回收更容易，可以避免高度污染的阳极氧化处理，同时保持对侵蚀和恶劣天气的鲁棒性。

3. 发明申请

US20120061661A1 SEMICONDUCTOR STRUCTURE AND FABRICATING METHOD THEREOF 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20120061661A1
公开(公告)日：2012-03-15
申请号：US13089282
申请日：2011-04-18
申请人： Po-Tsun Liu , Yi-Teh Chou , Li-Feng Teng , Fu-Hai Li , Han-Ping D. Shieh , Wei-Ting Lin , Ming-Chin Hung , Chun-Ching Hsiao , Jiun-Jye Chang , Po-Lun Chen
发明人： Po-Tsun Liu , Yi-Teh Chou , Li-Feng Teng , Fu-Hai Li , Han-Ping D. Shieh , Wei-Ting Lin , Ming-Chin Hung , Chun-Ching Hsiao , Jiun-Jye Chang , Po-Lun Chen
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.
摘要翻译：提供半导体结构及其制造方法。制造方法包括在衬底上形成栅极，源极和漏极，并在栅极和源极和漏极之间形成氧化物半导体材料。通过进行沉积工艺形成氧化物半导体材料，并且在完成沉积工艺之前引入氮气，以在氧化物半导体材料上形成氧化物半导体氮化物。

4. 发明授权

US08609460B2 Semiconductor structure and fabricating method thereof 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US08609460B2
公开(公告)日：2013-12-17
申请号：US13089282
申请日：2011-04-18
申请人： Po-Tsun Liu , Yi-Teh Chou , Li-Feng Teng , Fu-Hai Li , Han-Ping D. Shieh , Wei-Ting Lin , Ming-Chin Hung , Chun-Ching Hsiao , Jiun-Jye Chang , Po-Lun Chen
发明人： Po-Tsun Liu , Yi-Teh Chou , Li-Feng Teng , Fu-Hai Li , Han-Ping D. Shieh , Wei-Ting Lin , Ming-Chin Hung , Chun-Ching Hsiao , Jiun-Jye Chang , Po-Lun Chen
IPC分类号： H01L21/00 , H01L21/16 , H01L29/10 , H01L29/12 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78606 , H01L29/78696
摘要： A semiconductor structure and a fabricating method thereof are provided. The fabricating method includes forming a gate, a source, and a drain on a substrate and forming an oxide semiconductor material between the gate and the source and drain. The oxide semiconductor material is formed by performing a deposition process, and nitrogen gas is introduced before the deposition process is completely performed, so as to form oxide semiconductor nitride on the oxide semiconductor material.
摘要翻译：提供半导体结构及其制造方法。制造方法包括在衬底上形成栅极，源极和漏极，并在栅极和源极和漏极之间形成氧化物半导体材料。通过进行沉积工艺形成氧化物半导体材料，并且在完成沉积工艺之前引入氮气，以在氧化物半导体材料上形成氧化物半导体氮化物。

5. 发明申请

US20110054104A1 COMPOSITE FOR HEAT-DISSIPATING FILM 审中-公开
标题翻译：复合膜用于散热膜
公开(公告)号：US20110054104A1
公开(公告)日：2011-03-03
申请号：US12547510
申请日：2009-08-26
申请人： CHIANG-CHUNG CHANG , Chun-Ching Hsiao
发明人： CHIANG-CHUNG CHANG , Chun-Ching Hsiao
IPC分类号： C08K3/34
CPC分类号： C08K5/07 , C08K3/14 , C08L27/12
摘要： The invention provides a composite for coating and sputtering a heat-dissipating film. The composite contains silicon carbide of 25˜30 wt. % (weight percentage), teflon-based resin of 9-11 wt. %, and diluted ketones/alcohols-group material of 60˜65 wt. %. These components are mixed and blended to be capable of being coated, sputtered, and cured into a heat-dissipating film of a specific thickness. As such, the heat-dissipating performance could be conveniently enhanced. There is no need to rely on heat-sinking fins of large surface area. The production cost is reduced, recycling is easier, and the highly contaminating anodizing treatment could be avoided, while the robustness against erosion and harsh weather is still maintained.
摘要翻译：本发明提供了一种用于涂覆和溅射散热膜的复合材料。该复合材料含有25〜30重量％的碳化硅。％（重量百分比），特氟隆基树脂9-11重量％％，稀释酮/醇类物质为60〜65wt。％。将这些组分混合并混合以能够被涂覆，溅射和固化成特定厚度的散热膜。因此，可以方便地提高散热性能。没有必要依靠大面积散热鳍片。生产成本降低，回收更容易，可以避免高度污染的阳极氧化处理，同时保持对侵蚀和恶劣天气的鲁棒性。

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