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1. 发明授权

US08513073B1 Silicon germanium channel with silicon buffer regions for fin field effect transistor device 有权
标题翻译：具有硅缓冲区的硅锗通道用于鳍式场效应晶体管器件
公开(公告)号：US08513073B1
公开(公告)日：2013-08-20
申请号：US13600625
申请日：2012-08-31
申请人： Veeraraghavan S. Basker , Tenko Yamashita , Chun-Chun Yeh
发明人： Veeraraghavan S. Basker , Tenko Yamashita , Chun-Chun Yeh
IPC分类号： H01L21/336
CPC分类号： H01L29/66795 , H01L29/66545
摘要： A method of forming a fin field effect transistor (finFET) device includes forming a silicon fin on a substrate; forming an inner spacer adjacent to a first portion of the silicon fin; forming silicon germanium regions adjacent to a second portion of the silicon fin and the inner spacer; and oxidizing the silicon germanium regions, such that the second portion of the silicon fin that is located adjacent to the silicon germanium regions is converted to a silicon germanium channel region during oxidizing of the silicon germanium regions, and such that the first portion of the silicon fin is protected by the inner spacer during oxidation of the silicon germanium regions, wherein the first portion of the silicon fin comprises a silicon buffer region located between the silicon germanium channel region and a source/drain region of the finFET device.
摘要翻译：形成鳍状场效应晶体管（finFET）器件的方法包括在衬底上形成硅鳍片; 形成与所述硅片的第一部分相邻的内隔片; 形成与所述硅鳍片和所述内部间隔物的第二部分相邻的硅锗区域; 以及氧化硅锗区域，使得位于硅锗区附近的硅鳍片的第二部分在氧化硅锗区域期间被转换成硅锗沟道区，并且使硅的第一部分在硅锗区域的氧化期间，鳍片由内部间隔物保护，其中硅片的第一部分包括位于硅锗沟道区域和finFET器件的源极/漏极区域之间的硅缓冲区域。

2. 发明授权

US06784077B1 Shallow trench isolation process 有权
标题翻译：浅沟槽隔离工艺
公开(公告)号：US06784077B1
公开(公告)日：2004-08-31
申请号：US10270973
申请日：2002-10-15
申请人： Shih-Chi Lin , Chih Chung Lee , Guey Bao Huang , Szu-An Wu , Ying Lang Wang , Chun Chun Yeh
发明人： Shih-Chi Lin , Chih Chung Lee , Guey Bao Huang , Szu-An Wu , Ying Lang Wang , Chun Chun Yeh
IPC分类号： H01L2176
CPC分类号： H01L21/76224
摘要： A method of forming a silicon oxide, shallow trench isolation (STI) region, featuring a silicon rich, silicon oxide layer used to protect the STI region from a subsequent wet etch procedure, has been developed. The method features depositing a silicon oxide layer via PECVD procedures, without RF bias, using a high silane to oxygen ratio, resulting in a silicon rich, silicon oxide layer, located surrounding the STI region. The low etch rate of the silicon rich, silicon oxide layer, protect the silicon oxide STI region from buffered hydrofluoric wet etch procedures, used for removal of a dioxide pad layer.
摘要翻译：已经开发了一种形成氧化硅，浅沟槽隔离（STI）区域的方法，其特征在于用于保护STI区域免受后续湿蚀刻过程的富硅氧化硅层。该方法的特征是通过PECVD方法沉积氧化硅层，无需RF偏压，使用高硅烷与氧气比，导致位于STI区周围的富含硅的氧化硅层。富硅氧化硅层的低蚀刻速率保护硅氧化物STI区域免受用于去除二氧化物焊盘层的缓冲氢氟酸湿蚀刻工艺。

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