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    • 1. 发明授权
    • Word line decoder circuit apparatus and method
    • 字线解码电路装置及方法
    • US08638636B2
    • 2014-01-28
    • US12816960
    • 2010-06-16
    • Shin-Jang ShenBo-Chang WuChuan Ying YuKen-Hui ChenKuen-Long ChangChun-Hsiung Hung
    • Shin-Jang ShenBo-Chang WuChuan Ying YuKen-Hui ChenKuen-Long ChangChun-Hsiung Hung
    • G11C8/00
    • G11C16/16
    • One embodiment of the technology is an apparatus, a memory integrated circuit. The memory integrated circuit has word line address decoding circuitry. The circuit allows selection of a single word line to have an erase voltage. A decoder circuit includes an inverter and logic. The inverter has an input, and an output controlling a word line to perform the erase operation. A voltage range of the input extends between a first voltage reference and a second voltage reference. Examples of voltages references are a voltage supply and a ground. In some embodiments, this wide voltage range results from the input being free of a threshold voltage drop from preceding circuitry limiting the voltage range of the input. The logic of the decoder is circuit is controlled by a word line address to determine a value of the input of the inverter during the erase operation.
    • 该技术的一个实施例是一种装置,存储器集成电路。 存储器集成电路具有字线地址解码电路。 该电路允许选择单个字线以具有擦除电压。 解码器电路包括反相器和逻辑。 逆变器具有输入和控制字线的输出以执行擦除操作。 输入的电压范围在第一参考电压和第二电压基准之间延伸。 电压基准的示例是电压源和地。 在一些实施例中,该宽电压范围来自于输入端没有来自限制输入的电压范围的前一电路的阈值电压降。 解码器的逻辑电路由字线地址控制,以在擦除操作期间确定反相器的输入值。
    • 7. 发明授权
    • Read source line compensation in a non-volatile memory
    • 在非易失性存储器中读取源极线补偿
    • US07180782B2
    • 2007-02-20
    • US11151168
    • 2005-06-10
    • Chuan-Ying YuNai-Ping KuoKen-Hui ChenHan-Sung ChenChun-Hsiung Hung
    • Chuan-Ying YuNai-Ping KuoKen-Hui ChenHan-Sung ChenChun-Hsiung Hung
    • G11C16/28
    • G11C29/02G11C16/04G11C29/025G11C29/028G11C2029/5002
    • Non-volatile memory circuits according to the present invention provide a reference memory having multiple reference cells that are shared among a group of sense amplifiers through an interconnect conductor line. The higher number of reference cells for each reference memory generates a greater amount of electrical current for charging multiple source lines. The multiple source lines are coupled to the interconnect conductor bar for capacitance matching with a source line coupled to a memory cell in a main memory array. After a silicon wafer out, measurements to the capacitance produced by the source line in the main memory array and the capacitance produced by the source line in the reference array are taken for an optional trimming. A further calibration in capacitance matching is achieved by trimming one of the source lines that is coupled to the interconnect conductor bar and the reference memory, either by cutting a portion of the source line or adding a portion to the source line.
    • 根据本发明的非易失性存储器电路提供具有通过互连导体线在一组读出放大器之间共享的多个参考单元的参考存储器。 每个参考存储器的较高数量的参考单元产生更大量的用于对多个源极线进行充电的电流。 多个源极线耦合到互连导体条,用于与耦合到主存储器阵列中的存储器单元的源极线的电容匹配。 在硅晶片出来之后,对由主存储器阵列中的源极线产生的电容的测量以及由参考阵列中的源极线产生的电容进行可选的修整。 电容匹配的另一校准是通过切割源极线的一部分或者将一部分添加到源极线来修剪耦合到互连导体条和参考存储器的源极线之一来实现的。