会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • MOTOR VEHICLE INTERIOR TRIM PART WITH AN AIRBAG DEVICE
    • 具有安全气囊装置的电动车内部装备部件
    • US20090256335A1
    • 2009-10-15
    • US12101536
    • 2008-04-11
    • Markus ReilWilli SchaludeGeorg KirchbaumerJean Christophe Girard
    • Markus ReilWilli SchaludeGeorg KirchbaumerJean Christophe Girard
    • B60R21/20
    • B60R21/2165B60R13/0256B60R2013/0287
    • An interior trim part with an airbag device has an airbag module (1) with a pot-shaped housing (11) for accommodating an airbag (12) which is attached at the protruding end of a firing passage (24) to a dimensionally stable support (2). An opening section (23) for the deployment of the airbag is predetermined in the support (2) by means of tear lines (21) and/or hinge lines. The problem arises of preventing, by means of a simple measure, the opening section (23) from tearing off during the deployment of the airbag (12). For this purpose, it is proposed that a first section (41) of a retaining band (4) is attached to the opening section (23), said retaining band running within the firing passage (24) as far as the base of the airbag module (1) and being fastened there. It is additionally proposed, in the sense of an even more substantial improvement, that the attachment of the retaining band (4) to the opening section (23) is placed in the vicinity of the hinge line and aligned therewith, and the retaining band (4) is guided approximately tautly through the firing passage (24).
    • 具有安全气囊装置的内饰件具有安全气囊模块(1),其具有用于容纳安全气囊(12)的盆形壳体(11),该安全气囊(12)在发射通道(24)的突出端处附接到尺寸稳定的支撑 (2)。 用于展开气囊的开口部分(23)通过撕裂线(21)和/或铰链线在支撑件(2)中预先确定。 出现的问题是通过简单的措施防止在展开气囊(12)期间开口部分(23)被撕裂。 为此,建议将保持带(4)的第一部分(41)安装在开口部分(23)上,所述保持带在燃烧通道(24)内延伸至气囊的底部 模块(1)并被固定在那里。 另外提出,在更加显着的改进意义上,保持带(4)与开口部分(23)的连接被放置在铰链线附近并与其对准,并且保持带( 4)被大致张紧地引导通过点火通道(24)。
    • 2. 发明授权
    • Method of forming first level of metallization in DRAM chips
    • 在DRAM芯片中形成第一级金属化的方法
    • US06716764B1
    • 2004-04-06
    • US09573379
    • 2000-05-18
    • Christophe GirardRenzo MaccagnanStephane Thioliere
    • Christophe GirardRenzo MaccagnanStephane Thioliere
    • H01L21302
    • H01L21/76808H01L21/76895H01L27/10882H01L27/10894
    • There is disclosed a method of forming contacts and metal lands onto a semiconductor structure at the first level of metallization (M0). The initial structure is a silicon substrate having diffusion regions formed therein and a plurality of gate conductor stacks formed thereon. The structure is passivated by an insulating layer. Contact holes of a first type are etched in the insulating layer to expose some diffusion regions, then filled with doped polysilicon to form conductive studs substantially coplanar with the insulating layer surface. A first mask (M0) is formed at the surface of the structure to expose M0 land recess locations including above said studs. The masked structure is anisotropically dry etched to create M0 land recesses. Next, the M0 mask is removed. A second mask (CS) is formed at the surface of the structure to expose desired contact hole locations of a second type. The masked structure is again anisotropically dry etched to expose the diffusion regions and the top of gate conductor stacks. The CS mask is removed. Finally, said M0 land recesses and contact holes are filled with a metal, so that the metal and the insulating material top surface are substantially coplanar.
    • 公开了一种在第一金属化层(M0)上在半导体结构上形成接触和金属焊盘的方法。 初始结构是在其中形成有扩散区域的硅衬底和在其上形成的多个栅极导体堆叠。 该结构被绝缘层钝化。 在绝缘层中蚀刻第一类型的接触孔以暴露一些扩散区,然后用掺杂的多晶硅填充以形成与绝缘层表面基本上共面的导电柱。 在结构的表面上形成第一掩模(M0)以暴露包括上述螺柱的M0焊盘凹部位置。 掩模结构被各向异性地干蚀刻以产生M0焊盘凹槽。 接下来,移除M0掩模。 第二掩模(CS)形成在结构的表面以暴露第二类型的期望的接触孔位置。 再次对所掩蔽的结构进行各向异性干蚀刻以暴露扩散区域和栅极导体叠层的顶部。 删除CS掩码。 最后,所述M0焊盘凹部和接触孔填充有金属,使得金属和绝缘材料顶表面基本上共面。