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1. 发明申请

US20120018722A1 ION-SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSITIVE REGION 有权
标题翻译：敏感区域的多层结构的敏感传感器
公开(公告)号：US20120018722A1
公开(公告)日：2012-01-26
申请号：US13260739
申请日：2010-03-15
申请人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
发明人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： G01N27/227
摘要： An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.
摘要翻译：具有EIS结构的离子敏感传感器包括：半导体衬底，其上制备衬底氧化物103的层; 在衬底氧化物上制备的适配或匹配层; 化学稳定的中间绝缘体，其沉积在适配层或匹配层上; 以及传感器层，其包括氧化钽或氮氧化钽，并且被施加在中间绝缘体上; 其中所述中间绝缘体包括氧化铪或氧化锆或氧化锆和氧化铪的混合物，并且其中所述适配或匹配层的化学组成和/或其结构与所述中间绝缘体和所述衬底氧化物不同。

2. 发明申请

US20100265553A1 METHOD AND DEVICE FOR PRODUCING COLORED INDIVIDUALIZED HOLOGRAMS 有权
标题翻译：用于生产有色个人化的方法和装置
公开(公告)号：US20100265553A1
公开(公告)日：2010-10-21
申请号：US12676406
申请日：2008-09-03
申请人： André Leopold , Christian Kunath , Jens Ehreke , Gerhard Hochenbleicher , Christian Klepzig , Michael Langgassner
发明人： André Leopold , Christian Kunath , Jens Ehreke , Gerhard Hochenbleicher , Christian Klepzig , Michael Langgassner
IPC分类号： G03H1/10
CPC分类号： G03H1/04 , G03H1/0011 , G03H1/202 , G03H2001/205 , G03H2001/2268 , G03H2001/2271 , G03H2210/54 , G03H2222/18 , G03H2222/34 , G03H2222/36 , G03H2225/35 , G03H2225/61
摘要： A method produces colored individualized holograms for use as security elements for documents, and to a device for producing individualized holograms. The method generates light formed of different colors, spatially modulates the light, color by color, in an individual manner, optically guides the modulated light such that the light is at least partially refracted and/or reflected on a holographic master and is superposed in a holographic recording material with the modulated non-refracted and/or reflected light, and records the hologram. The light is modulated, color by color and at the same time, by a plurality of spatial light modulators. Every color is associated with its own spatial light modulator and a plurality of monochrome modulated light beams of the plurality of colors is combined in a collinear manner prior to refraction and/or reflection on the holographic master and the superposition in the recording material to give a multicolor exposure light beam.
摘要翻译：一种方法产生用作文件的安全元件的彩色的个性化全息图，以及用于产生个性化全息图的装置。该方法产生由不同颜色形成的光，以单独的方式空间地调制光，颜色颜色，光学地引导调制的光，使得光在全息图母板上至少部分地折射和/或反射，并叠加在具有调制的非折射和/或反射光的全息记录材料，并记录全息图。通过多个空间光调制器对光进行颜色调制，并同时进行调制。每种颜色都与其自己的空间光调制器相关联，并且多个颜色的多个单色调制光束在折射和/或反射之前以共线的方式组合在全息图像母版上和在记录材料中叠加以产生多色曝光光束。

3. 发明申请

US20080111161A1 PROTECTIVE STRUCTURE FOR SEMICONDUCTOR SENSORS 有权
标题翻译：半导体传感器的保护结构
公开(公告)号：US20080111161A1
公开(公告)日：2008-05-15
申请号：US11936962
申请日：2007-11-08
申请人： Stephan SORGE , Christian KUNATH , Eberhard KURTH
发明人： Stephan SORGE , Christian KUNATH , Eberhard KURTH
IPC分类号： H01L29/78
CPC分类号： G01N27/414
摘要： A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.
摘要翻译：集成在与测量介质直接接触的状态的半导体衬底中的半导体传感器的保护结构具有施加到半导体衬底，金属层和绝缘层的半导体层。绝缘层设置在半导电层和金属层之间并且与其电绝缘。

4. 发明授权

US07321143B2 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和用于产生离子敏感场效应晶体管的方法
公开(公告)号：US07321143B2
公开(公告)日：2008-01-22
申请号：US11210420
申请日：2005-08-24
申请人： Christian Kunath , Eberhard Kurth
发明人： Christian Kunath , Eberhard Kurth
IPC分类号： H01L29/76
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.
摘要翻译：离子敏感场效应晶体管包括其上形成有源极区和漏极区的衬底。在沟道区域之上，离子敏感场效应晶体管具有栅极，其具有包括金属氧化物氮化物混合物和/或金属氧化物氮化物混合物化合物的敏感层。

5. 发明申请

US20060035420A1 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和离子敏感场效应晶体管的制造方法
公开(公告)号：US20060035420A1
公开(公告)日：2006-02-16
申请号：US11210420
申请日：2005-08-24
申请人： Christian Kunath , Eberhard Kurth
发明人： Christian Kunath , Eberhard Kurth
IPC分类号： H01L21/84
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.
摘要翻译：离子敏感场效应晶体管包括其上形成有源极区和漏极区的衬底。在沟道区域之上，离子敏感场效应晶体管具有栅极，其具有包括金属氧化物氮化物混合物和/或金属氧化物氮化物混合物化合物的敏感层。

6. 发明申请

US20050263798A1 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和用于产生离子敏感场效应晶体管的方法
公开(公告)号：US20050263798A1
公开(公告)日：2005-12-01
申请号：US11126846
申请日：2005-05-10
申请人： Eberhard Kurth , Christian Kunath , Heinrich Gruger
发明人： Eberhard Kurth , Christian Kunath , Heinrich Gruger
IPC分类号： G01N27/333 , G01N27/414 , H01L23/58
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.
摘要翻译：离子敏感场效应晶体管具有由金属硅酸盐组成的栅极。金属硅酸盐浇口对侵蚀性测量物质提供高抗性，并具有较高的长期稳定性。离子敏感场效应晶体管的栅极可以包括单层栅极，其中栅极直接布置在沟道区上。

7. 发明授权

US08760742B2 Method and device for individual holographic drum exposure 有权
标题翻译：单独全息鼓曝光的方法和装置
公开(公告)号：US08760742B2
公开(公告)日：2014-06-24
申请号：US12676408
申请日：2008-09-03
申请人： André Leopold , Christian Kunath , Jens Ehreke , Gerhard Hochenbleicher , Christian Klepzig , Michael Langgassner
发明人： André Leopold , Christian Kunath , Jens Ehreke , Gerhard Hochenbleicher , Christian Klepzig , Michael Langgassner
IPC分类号： G03H1/20 , G03H1/02
CPC分类号： G03H1/20 , G03H1/0011 , G03H1/04 , G03H1/202 , G03H2210/54 , G03H2222/36 , G03H2225/11 , G03H2225/12 , G03H2225/31 , G03H2227/04
摘要： A method and a device produce an individualized hologram from a generated light beam. According to the method, the light beam is individually modulated in a spatial light modulator, a holographic recording material is arranged relative to a holographic master, and the individually modulated light beam is guided in such a manner that at least part of the individually modulated light beam is refracted and/or reflected on the holographic master and an interference pattern representing the individualized hologram is produced in the holographic recording material. The individually modulated light beam is displaced relative to the holographic recording material and the holographic master to scan the entire holographic master. The recording material is arranged so as to rest on a cylindrical drum or a cylindrical drum segment and the drum is rotated about a drum axis of the drum or the drum segment during scanning of the holographic master.
摘要翻译：一种方法和装置从产生的光束产生单独的全息图。根据该方法，光束在空间光调制器中单独调制，全息记录材料相对于全息母版布置，并且单独调制的光束以这样的方式被引导，使得至少部分单独调制的光光束在全息原版上被折射和/或反射，并且在全息记录材料中产生表示个体化全息图的干涉图案。单独调制的光束相对于全息记录材料和全息主镜移位以扫描整个全息原稿。记录材料被布置成搁置在圆柱形鼓或圆柱形鼓部分上，并且在扫描全息主镜期间，鼓围绕鼓或鼓部分的鼓轴旋转。

8. 发明申请

US20050012115A1 Ion sensitive field effect transistor and method for producing an ion sensitive field effect transistor 审中-公开
标题翻译：离子敏感场效应晶体管及其制造方法
公开(公告)号：US20050012115A1
公开(公告)日：2005-01-20
申请号：US10917049
申请日：2004-08-11
申请人： Heinrich Grueger , Christian Kunath
发明人： Heinrich Grueger , Christian Kunath
IPC分类号： A61K9/20 , A61K31/415 , A61K31/495 , A61K31/54 , A61K31/635 , G01N27/414 , H01L31/0328
CPC分类号： G01N27/414
摘要： The invention relates to an ion-sensitive field effect transistor, comprising a gate (36) consisting of carbon nitride. The carbon nitride gate (36) is highly resistant to aggressive substances to be measured and also exhibits good adhesive properties. In addition, the ion-sensitive field effect transistor has high long-term stability and negligible drift. Said ion-sensitive field effect transistor can be produced in a method that uses CMOS-compatible planar technology.
摘要翻译：本发明涉及离子敏感场效应晶体管，其包括由氮化碳组成的栅极（36）。氮化物栅极（36）对待测量的侵蚀性物质具有高度的抗性，并且还表现出良好的粘合性能。此外，离子敏感场效应晶体管具有高长期稳定性和漂移可忽略不计。所述离子敏感场效应晶体管可以以采用CMOS兼容平面技术的方法制造。

9. 发明授权

US08461587B2 Ion-sensitive sensor with multilayer construction in the sensitive region 有权
标题翻译：离子敏感传感器在敏感区域具有多层结构
公开(公告)号：US08461587B2
公开(公告)日：2013-06-11
申请号：US13260739
申请日：2010-03-15
申请人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
发明人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： G01N27/227
摘要： An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.
摘要翻译：具有EIS结构的离子敏感传感器包括：半导体衬底，其上制备衬底氧化物103的层; 在衬底氧化物上制备的适配或匹配层; 化学稳定的中间绝缘体，其沉积在适配层或匹配层上; 以及传感器层，其包括氧化钽或氮氧化钽，并且被施加在中间绝缘体上; 其中所述中间绝缘体包括氧化铪或氧化锆或氧化锆和氧化铪的混合物，并且其中所述适配或匹配层的化学组成和/或其结构与所述中间绝缘体和所述衬底氧化物不同。

10. 发明申请

US20100253987A1 Method and Device for Individual Holographic Drum Exposure 有权
标题翻译：单独全息鼓曝光的方法和装置
公开(公告)号：US20100253987A1
公开(公告)日：2010-10-07
申请号：US12676408
申请日：2008-09-03
申请人： André Leopold , Christian Kunath , Jens Ehreke , Gerhard Hochenbleicher , Christian Klepzig , Michael Langgassner
发明人： André Leopold , Christian Kunath , Jens Ehreke , Gerhard Hochenbleicher , Christian Klepzig , Michael Langgassner
IPC分类号： G03H1/12
CPC分类号： G03H1/20 , G03H1/0011 , G03H1/04 , G03H1/202 , G03H2210/54 , G03H2222/36 , G03H2225/11 , G03H2225/12 , G03H2225/31 , G03H2227/04
摘要： A method and a device produce an individualized hologram from a generated light beam. According to the method, the light beam is individually modulated in a spatial light modulator, a holographic recording material is arranged relative to a holographic master, and the individually modulated light beam is guided in such a manner that at least part of the individually modulated light beam is refracted and/or reflected on the holographic master and an interference pattern representing the individualized hologram is produced in the holographic recording material. The individually modulated light beam is displaced relative to the holographic recording material and the holographic master to scan the entire holographic master. The recording material is arranged so as to rest on a cylindrical drum or a cylindrical drum segment and the drum is rotated about a drum axis of the drum or the drum segment during scanning of the holographic master.
摘要翻译：一种方法和装置从产生的光束产生单独的全息图。根据该方法，光束在空间光调制器中单独调制，全息记录材料相对于全息母版布置，并且单独调制的光束以这样的方式被引导，使得至少部分单独调制的光光束在全息原版上被折射和/或反射，并且在全息记录材料中产生表示个体化全息图的干涉图案。单独调制的光束相对于全息记录材料和全息主镜移位以扫描整个全息原稿。记录材料被布置成搁置在圆柱形鼓或圆柱形鼓部分上，并且在扫描全息主镜期间，鼓围绕鼓或鼓部分的鼓轴旋转。

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