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1. 发明申请

US20150028417A1 HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：高压器件及其制造方法
公开(公告)号：US20150028417A1
公开(公告)日：2015-01-29
申请号：US14483520
申请日：2014-09-11
申请人： Tsung-Yi Huang , Chien-Hao Huang
发明人： Tsung-Yi Huang , Chien-Hao Huang
IPC分类号： H01L29/78 , H01L29/06 , H01L29/10 , H01L29/08
CPC分类号： H01L29/0878 , H01L21/266 , H01L29/0653 , H01L29/0692 , H01L29/0847 , H01L29/086 , H01L29/1095 , H01L29/42368 , H01L29/66659 , H01L29/7816 , H01L29/7835
摘要： The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a first conductive type substrate, wherein the substrate includes isolation regions defining a device region. The high voltage device includes: a drift region, located in the device region, doped with second conductive type impurities; a gate in the device region and on the surface of the substrate; and a second conductive type source and drain in the device region, at different sides of the gate respectively. From top view, the concentration of the second conductive type impurities of the drift region is distributed substantially periodically along horizontal and vertical directions.
摘要翻译：本发明公开了一种高压器件及其制造方法。高压器件形成在第一导电型衬底中，其中衬底包括限定器件区域的隔离区域。高电压装置包括：位于器件区域中的掺杂有第二导电类型杂质的漂移区; 在器件区域和衬底的表面上的栅极; 以及在栅极的不同侧的器件区域中的第二导电类型源极和漏极。从俯视图，漂移区域的第二导电型杂质的浓度沿水平方向和垂直方向大致周期性地分布。

2. 发明授权

US08685824B2 Hybrid high voltage device and manufacturing method thereof 有权
标题翻译：混合高压器件及其制造方法
公开(公告)号：US08685824B2
公开(公告)日：2014-04-01
申请号：US13529963
申请日：2012-06-21
申请人： Tsung-Yi Huang , Chien-Hao Huang
发明人： Tsung-Yi Huang , Chien-Hao Huang
IPC分类号： H01L21/336
CPC分类号： H01L29/7817 , H01L29/0653 , H01L29/0692 , H01L29/0696 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/66681 , H01L29/7816 , H01L29/7835
摘要： The present invention discloses a hybrid high voltage device and a manufacturing method thereof. The hybrid high voltage device is formed in a first conductive type substrate, and includes at least one lateral double diffused metal oxide semiconductor (LDMOS) device region and at least one vent device region, wherein the LDMOS device region and the vent device region are connected in a width direction and arranged in an alternating order. Besides, corresponding high voltage wells, sources, drains, body regions, and gates of the LDMOS device region and the vent device region are connected to each other respectively.
摘要翻译：本发明公开了一种混合式高压装置及其制造方法。混合高压器件形成在第一导电型衬底中，并且包括至少一个横向双扩散金属氧化物半导体（LDMOS）器件区域和至少一个通气器件区域，其中LDMOS器件区域和通气器件区域被连接在宽度方向上以交替的顺序布置。此外，LDMOS器件区域和通风装置区域的相应的高压井，源极，漏极，体区和栅极分别彼此连接。

3. 发明申请

US20130256846A1 Semiconductor Overlapped PN Structure and Manufacturing Method Thereof 有权
标题翻译：半导体重叠PN结构及其制造方法
公开(公告)号：US20130256846A1
公开(公告)日：2013-10-03
申请号：US13864196
申请日：2013-04-16
申请人： Tsung-Yi Huang , Chien-Hao Huang , Ying-Shiou Lin
发明人： Tsung-Yi Huang , Chien-Hao Huang , Ying-Shiou Lin
IPC分类号： H01L29/06
CPC分类号： H01L29/06 , H01L21/266 , H01L29/0688 , H01L29/36
摘要： The present invention discloses a semiconductor overlapped PN structure and manufacturing method thereof. The method includes: providing a substrate; providing a first mask to define a P (or N) type well and at least one overlapped region in the substrate; implanting P (or N) type impurities into the P (or N) type well and the at least one overlapped region; providing a second mask having at least one opening to define an N (or P) type well in the substrate, and to define at least one dual-implanted region in the at least one overlapped region; implanting N (or P) type impurities into the N (or P) type well and the at least one dual-implanted region such that the at least one dual-implanted region has P type and N type impurities.
摘要翻译：本发明公开了半导体重叠PN结构及其制造方法。该方法包括：提供衬底; 提供第一掩模以限定所述衬底中的P（或N）型阱和至少一个重叠区域; 将P（或N）型杂质注入P（或N）型阱和至少一个重叠区域; 提供具有至少一个开口的第二掩模，以在所述衬底中限定N（或P）型阱，并且在所述至少一个重叠区域中限定至少一个双注入区域; 将N（或P）型杂质注入N（或P）型阱和至少一个双注入区，使得至少一个双注入区具有P型和N型杂质。

4. 发明申请

US20130069153A1 High Voltage Device and Manufacturing Method Thereof 有权
标题翻译：高压器件及其制造方法
公开(公告)号：US20130069153A1
公开(公告)日：2013-03-21
申请号：US13235366
申请日：2011-09-17
申请人： Tsung-Yi Huang , Chien-Hao Huang
发明人： Tsung-Yi Huang , Chien-Hao Huang
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7816 , H01L21/823418 , H01L29/0634 , H01L29/0692 , H01L29/0886 , H01L29/1045 , H01L29/41758 , H01L29/423 , H01L29/66659 , H01L29/7835
摘要： The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one another but are electrically connected with one another; a source and a drain in the device region; and a gate on the surface of the substrate and between the source and drain in the device region.
摘要翻译：本发明公开了一种高压器件及其制造方法。高电压装置包括：具有用于限定器件区域的隔离结构的衬底; 位于所述器件区域中的漂移区域，其中，从顶视图，所述漂移区域包括彼此分离但彼此电连接的多个子区域; 设备区域中的源极和漏极; 以及在衬底的表面上以及器件区域中的源极和漏极之间的栅极。

5. 发明授权

US08258546B2 High-k metal gate device 有权
标题翻译：高k金属门装置
公开(公告)号：US08258546B2
公开(公告)日：2012-09-04
申请号：US13186656
申请日：2011-07-20
申请人： Cheng-Lung Hung , Yong-Tian Hou , Keh-Chiang Ku , Chien-Hao Huang
发明人： Cheng-Lung Hung , Yong-Tian Hou , Keh-Chiang Ku , Chien-Hao Huang
IPC分类号： H01L27/118
CPC分类号： H01L21/28088 , H01L21/265 , H01L21/268 , H01L21/32155 , H01L21/324 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.
摘要翻译：半导体器件包括半导体衬底和形成在衬底中的晶体管，晶体管具有栅极堆叠，其具有形成在衬底上的界面层，形成在界面层上的高k电介质层，在高层上形成的金属层 - 介电层，在界面层和高k电介质层之间形成的覆盖层; 以及形成在所述金属层上的掺杂层，所述掺杂层至少包括F.

6. 发明申请

US20110272766A1 High-K Metal Gate Device 有权
标题翻译：高K金属门装置
公开(公告)号：US20110272766A1
公开(公告)日：2011-11-10
申请号：US13186656
申请日：2011-07-20
申请人： Cheng-Lung Hung , Yong-Tian Hou , Keh-Chiang Ku , Chien-Hao Huang
发明人： Cheng-Lung Hung , Yong-Tian Hou , Keh-Chiang Ku , Chien-Hao Huang
IPC分类号： H01L29/78
CPC分类号： H01L21/28088 , H01L21/265 , H01L21/268 , H01L21/32155 , H01L21/324 , H01L29/4966 , H01L29/513 , H01L29/517
摘要： A semiconductor device includes a semiconductor substrate and a transistor formed in the substrate, the transistor having a gate stack that has an interfacial layer formed on the substrate, a high-k dielectric layer formed over the interfacial layer, a metal layer formed over the high-dielectric layer, a capping layer formed between the interfacial layer and high-k dielectric layer; and a doped layer formed on the metal layer, the doped layer including at least F.
摘要翻译：半导体器件包括半导体衬底和形成在衬底中的晶体管，晶体管具有栅极堆叠，其具有形成在衬底上的界面层，形成在界面层上的高k电介质层，在高层上形成的金属层 - 介电层，在界面层和高k电介质层之间形成的覆盖层; 以及形成在所述金属层上的掺杂层，所述掺杂层至少包括F.

7. 发明申请

US20100045979A1 PHOTOCATALYSIS TESTING DEVICE 有权
标题翻译：光电测试设备
公开(公告)号：US20100045979A1
公开(公告)日：2010-02-25
申请号：US12436141
申请日：2009-05-06
申请人： CHIEN-HAO HUANG
发明人： CHIEN-HAO HUANG
IPC分类号： G01J3/42
CPC分类号： G01N21/255 , G01N21/272 , G01N21/78 , G01N2021/634 , G01N2201/084
摘要： A photocatalysis testing device includes a reaction chamber, a light source, and a spectrophotometer. Reactants including a methylene blue (MB) solution and a photocatalyst can be added to the reaction chamber and illuminated by the light source. Color vanishing rate of the MB solution can be measured by the spectrophotometer. Further, the photocatalysis testing device also includes a light-tight chamber and a temperature stabilizer. The reaction chamber and the light source are received in the light-tight chamber to avoid ambient light effecting on the photocatalysis test. The spectrophotometer is positioned outside the light-tight chamber and optically coupled to the reaction chamber. The temperature stabilizer is configured for stabilizing temperature of the MB solution.
摘要翻译：光催化测试装置包括反应室，光源和分光光度计。可以将包含亚甲基蓝（MB）溶液和光催化剂的反应物加入到反应室中并被光源照射。 MB溶液的颜色消失速率可以通过分光光度计测量。此外，光催化测试装置还包括不透光室和温度稳定器。反应室和光源被接收在不透光室中，以避免环境光影响光催化测试。分光光度计位于不透光室的外部并且光学耦合到反应室。温度稳定器配置用于稳定MB溶液的温度。

8. 发明申请

US20090026477A1 NOVEL PHOSPHOR AND FABRICATION OF THE SAME 审中-公开
标题翻译：新型磷化氢及其制备方法
公开(公告)号：US20090026477A1
公开(公告)日：2009-01-29
申请号：US12172483
申请日：2008-07-14
申请人： Teng-Ming CHEN , Yi-Chen Chiu , Chien Hao Huang
发明人： Teng-Ming CHEN , Yi-Chen Chiu , Chien Hao Huang
IPC分类号： H01L33/00 , C01F17/00
CPC分类号： C09K11/7775 , C01G17/006 , C01P2002/50 , C01P2002/52 , C01P2002/72 , C01P2006/60 , Y02B20/181
摘要： The present invention provides a novel phosphor represent by the following general formula: Am(B1-xCex)nGeyOz wherein A is at least one element selected from Mg and Zn; B is at least one element selected from the group consisting of La, Y and Gd; each of m, n, y and z is the number larger than 0 provided that 2m+3n+4y=2z; and x is in the range 0.0001≦x≦0.8.
摘要翻译：本发明提供一种由以下通式表示的新型荧光体：<？in-line-formula description =“In-line formula”end =“lead”？> Am（B1-xCex）nGeyOz <？in-line-formula description =“In-line Formulas”end =“tail”？>其中A是选自Mg和Zn中的至少一种元素; B是选自La，Y和Gd中的至少一种元素; 如果2m + 3n + 4y = 2z，则m，n，y和z分别为大于0的数。 x在0.0001 <= x <= 0.8的范围内。

9. 发明授权

US09117901B2 High voltage device and manufacturing method thereof 有权
公开(公告)号：US09117901B2
公开(公告)日：2015-08-25
申请号：US14592306
申请日：2015-01-08
申请人： Tsung-Yi Huang , Chien-Hao Huang
发明人： Tsung-Yi Huang , Chien-Hao Huang
IPC分类号： H01L29/78 , H01L21/8234 , H01L29/66 , H01L29/06 , H01L29/08 , H01L29/417 , H01L29/423 , H01L29/10
CPC分类号： H01L29/7816 , H01L21/823418 , H01L29/0634 , H01L29/0692 , H01L29/0886 , H01L29/1045 , H01L29/41758 , H01L29/423 , H01L29/66659 , H01L29/7835
摘要： The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one another but are electrically connected with one another; a source and a drain in the device region; and a gate on the surface of the substrate and between the source and drain in the device region.

10. 发明授权

US08963237B2 High voltage device and manufacturing method thereof 有权
标题翻译：高压器件及其制造方法
公开(公告)号：US08963237B2
公开(公告)日：2015-02-24
申请号：US13235366
申请日：2011-09-17
申请人： Tsung-Yi Huang , Chien-Hao Huang
发明人： Tsung-Yi Huang , Chien-Hao Huang
IPC分类号： H01L29/66 , H01L29/08 , H01L29/06 , H01L29/78 , H01L21/8234 , H01L29/10 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7816 , H01L21/823418 , H01L29/0634 , H01L29/0692 , H01L29/0886 , H01L29/1045 , H01L29/41758 , H01L29/423 , H01L29/66659 , H01L29/7835
摘要： The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device includes: a substrate, having an isolation structure for defining a device region; a drift region located in the device region, wherein from top view, the drift region includes multiple sub-regions separated from one another but are electrically connected with one another; a source and a drain in the device region; and a gate on the surface of the substrate and between the source and drain in the device region.
摘要翻译：本发明公开了一种高压器件及其制造方法。高电压装置包括：具有用于限定器件区域的隔离结构的衬底; 位于所述器件区域中的漂移区域，其中，从顶视图，所述漂移区域包括彼此分离但彼此电连接的多个子区域; 设备区域中的源极和漏极; 以及在衬底的表面上以及器件区域中的源极和漏极之间的栅极。

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