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1. 发明授权

US08716731B2 Tunable phosphor for luminescent 有权
标题翻译：可调谐荧光粉发光
公开(公告)号：US08716731B2
公开(公告)日：2014-05-06
申请号：US13084135
申请日：2011-04-11
申请人： Chiao-Wen Yeh , Ru-Shi Liu
发明人： Chiao-Wen Yeh , Ru-Shi Liu
IPC分类号： H01L33/44
CPC分类号： H05B33/14 , C09K11/0883 , C09K11/7728 , H01L33/502
摘要： The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6−pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.
摘要翻译：本公开提供了一种包括发光二极管（LED）的照明系统; 以及配置在发光二极管附近的可调发光材料，其中可调谐发光材料包括由稀土元素（RE）掺杂的碱土金属（AE）和氮化硅铝，其被配制为（AE）Si6-pAlpN8，其中p 是定义重量相对铝含量的参数，p大于零。

2. 发明授权

US08324743B2 Semiconductor device with a structure to protect alignment marks from damage in a planarization process 有权
标题翻译：具有用于保护对准标记免受平坦化处理中的损伤的结构的半导体器件
公开(公告)号：US08324743B2
公开(公告)日：2012-12-04
申请号：US12814228
申请日：2010-06-11
申请人： Chiao-Wen Yeh , Chih-Hao Huang
发明人： Chiao-Wen Yeh , Chih-Hao Huang
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method of protecting alignment marks from damage in a planarization process includes providing a substrate including a surface, forming trenches in the substrate from the surface, forming a first dielectric layer on the substrate, forming a second dielectric layer on the first dielectric layer, forming a patterned second dielectric layer by removing second dielectric over the trenches, resulting in openings defined by the trenches and the patterned second dielectric layer, forming a third dielectric layer on the patterned second dielectric layer, the third dielectric layer filling the openings, and planarizing the third dielectric layer by using the patterned second dielectric layer as a stop layer, resulting in residual third dielectric in the openings that includes a first portion in the substrate and a second portion above the surface of the substrate.
摘要翻译：在平坦化工艺中保护对准标记免受损伤的方法包括提供包括表面的衬底，从表面在衬底中形成沟槽，在衬底上形成第一介电层，在第一介电层上形成第二介电层，形成图案化的第二介电层，通过在沟槽上去除第二电介质，导致由沟槽和图案化的第二介电层限定的开口，在图案化的第二介电层上形成第三电介质层，填充开口的第三电介质层，通过使用图案化的第二介电层作为阻挡层，在开口中产生残留的第三电介质，其包括衬底中的第一部分和衬底表面上的第二部分。

3. 发明申请

US20110304006A1 METHOD OF ALIGNMENT MARK PROTECTION AND SEMICONDUCTOR DEVICE FORMED THEREBY 有权
标题翻译：对准标记保护和形成的半导体器件的方法
公开(公告)号：US20110304006A1
公开(公告)日：2011-12-15
申请号：US12814228
申请日：2010-06-11
申请人： Chiao-Wen Yeh , Chih-Hao Huang
发明人： Chiao-Wen Yeh , Chih-Hao Huang
IPC分类号： H01L23/544 , H01L21/71
CPC分类号： H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method of protecting alignment marks from damage in a planarization process includes providing a substrate including a surface, forming trenches in the substrate from the surface, forming a first dielectric layer on the substrate, forming a second dielectric layer on the first dielectric layer, forming a patterned second dielectric layer by removing second dielectric over the trenches, resulting in openings defined by the trenches and the patterned second dielectric layer, forming a third dielectric layer on the patterned second dielectric layer, the third dielectric layer filling the openings, and planarizing the third dielectric layer by using the patterned second dielectric layer as a stop layer, resulting in residual third dielectric in the openings that includes a first portion in the substrate and a second portion above the surface of the substrate.
摘要翻译：在平坦化工艺中保护对准标记免受损伤的方法包括提供包括表面的衬底，从表面在衬底中形成沟槽，在衬底上形成第一介电层，在第一介电层上形成第二介电层，形成图案化的第二介电层，通过在沟槽上去除第二电介质，导致由沟槽和图案化的第二介电层限定的开口，在图案化的第二介电层上形成第三电介质层，填充开口的第三电介质层，通过使用图案化的第二介电层作为阻挡层，在开口中产生残留的第三电介质，其包括衬底中的第一部分和衬底表面上的第二部分。

4. 发明申请

US20110191728A1 INTEGRATED CIRCUIT HAVING LINE END CREATED THROUGH USE OF MASK THAT CONTROLS LINE END SHORTENING AND CORNER ROUNDING ARISING FROM PROXIMITY EFFECTS 审中-公开
标题翻译：通过使用面板进行线路端接的集成电路，控制线路端接和来自接近效应的拐角环绕
公开(公告)号：US20110191728A1
公开(公告)日：2011-08-04
申请号：US13087384
申请日：2011-04-15
申请人： Chin-Cheng Yang , Chiao-Wen Yeh , Chih-Hao Huang
发明人： Chin-Cheng Yang , Chiao-Wen Yeh , Chih-Hao Huang
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , Y10T428/24802
摘要： An integrated circuit that includes a line end created through use of a mask that controls line end shortening and corner rounding arising from proximity effects is provided. The mask includes a main feature having opaque and transmissive areas arranged to reflect a patterned feature of the line end, at least one of an opaque edge or a transmissive edge located at each end of the main feature, wherein the opaque edge has a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge has a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.
摘要翻译：提供了一种集成电路，其包括通过使用控制线端缩短和由邻近效应产生的角圆舍入的掩模创建的线端。掩模包括具有不透明区域和透射区域的主要特征，其布置成反映线端的图案化特征，位于主要特征的每个端部处的不透明边缘或透射边缘中的至少一个，其中不透明边缘具有一组透射辅助特征被布置在其中，使得该组透射辅助特征与主要特征的透射区域交替地对准，并且透射边缘具有布置在其中的一组不透明辅助特征，使得该组不透明辅助特征与不透明的辅助特征交替地对准区域的主要特点。

5. 发明申请

US20100053616A1 ALIGNMENT MARK AND METHOD OF GETTING POSITION REFERENCE FOR WAFER 有权
标题翻译：对准标记和获取位置参考的方法
公开(公告)号：US20100053616A1
公开(公告)日：2010-03-04
申请号：US12203310
申请日：2008-09-03
申请人： Chiao-Wen Yeh , Chih-Hao Huang
发明人： Chiao-Wen Yeh , Chih-Hao Huang
IPC分类号： H01L23/544 , G01B11/00
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L2223/54426 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a wafer is described, including at least one dense pattern and at least one block-like pattern adjacent thereto and shown as at least one dark image and at least one bright image adjacent thereto. A method of getting a position reference for a wafer is also described. An above alignment mark is formed. The alignment mark, which is shown as at least one dark image and at least one bright image adjacent thereto that are formed by the at least one dense pattern and the at least one block-like pattern, is then detected.
摘要翻译：描述晶片上的对准标记，其包括至少一个致密图案和与其相邻的至少一个块状图案，并且示出为至少一个暗图像和与其相邻的至少一个亮像。还描述了获得晶片的位置参考的方法。形成上述对准标记。然后检测作为至少一个暗图像和与其相邻的至少一个亮图像的对准标记，其由至少一个密集图案和至少一个块状图案形成。

6. 发明授权

US08585929B2 Phosphor and method for preparing the same 有权
标题翻译：荧光体及其制备方法
公开(公告)号：US08585929B2
公开(公告)日：2013-11-19
申请号：US13243672
申请日：2011-09-23
申请人： Chiao-Wen Yeh , Ru-Shi Liu
发明人： Chiao-Wen Yeh , Ru-Shi Liu
IPC分类号： C09K11/08 , C09K11/66
CPC分类号： C09K11/59 , C09K11/0883
摘要： Disclosed is a phosphor and a method for preparing the same. The phosphor comprises a material having a general composition formula expressed by M1Si6N8-XOX (satisfying 0≦x≦1), where M is alkaline earth metal.
摘要翻译：公开了一种磷光体及其制备方法。荧光体包括具有由M1Si6N8-XOX（满足0 @ x @）表示的总体组成式的材料，其中M是碱土金属。

7. 发明申请

US20120104929A1 PHOSPHOR WITH Ce3+/Ce3+, Li+ DOPED LUMINESCENT MATERIALS 有权
标题翻译：具有Ce3 + / Ce3 +，Li + DOPED发光材料的磷光体
公开(公告)号：US20120104929A1
公开(公告)日：2012-05-03
申请号：US12938221
申请日：2010-11-02
申请人： Chiao-Wen Yeh , Ru-Shi Liu
发明人： Chiao-Wen Yeh , Ru-Shi Liu
IPC分类号： H01J1/62 , C09K11/79 , H01L33/00
CPC分类号： C09K11/7721 , C09K11/0883 , H01L33/502
摘要： The present disclosure provides an illuminating system including a light emitting device and a luminescent material disposed approximate the light-emitting device. The luminescent material includes a strontium silicon nitride (SrSi6N8) doped by one of cerium (Ce3+) and cerium (Ce3+) and lithium (Li+).
摘要翻译：本公开提供一种照明系统，包括发光装置和近似于发光装置的发光材料。发光材料包括由铈（Ce 3+）和铈（Ce 3+）中的一种和锂（Li +）之一掺杂的氮化硅锶（SrSi 6 N 8）。

8. 发明授权

US07939225B2 Mask for controlling line end shortening and corner rounding arising from proximity effects 有权
标题翻译：用于控制线端缩短和由邻近效应产生的角圆角的面具
公开(公告)号：US07939225B2
公开(公告)日：2011-05-10
申请号：US11971900
申请日：2008-01-09
申请人： Chin-Cheng Yang , Chiao-Wen Yeh , Chih-Haw Huang
发明人： Chin-Cheng Yang , Chiao-Wen Yeh , Chih-Haw Huang
IPC分类号： G03F1/00 , G03C5/00
CPC分类号： G03F1/36 , Y10T428/24802
摘要： A mask for producing an image feature on an image surface during a semiconductor fabrication process is provided, the mask comprising a main feature having opaque areas and transmissive areas arranged in the form of the image feature, wherein each end of the main feature includes at least one of an opaque edge and a transmissive edge, wherein the opaque edge includes a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge includes a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.
摘要翻译：提供了一种用于在半导体制造工艺期间在图像表面上产生图像特征的掩模，所述掩模包括具有以图像特征形式布置的不透明区域和透射区域的主要特征，其中主要特征的每个端部至少包括不透明边缘和透射边缘之一，其中不透明边缘包括布置在其中的一组透射辅助特征，使得该组透射辅助特征与主要特征的透射区域交替地对准，并且透射边缘包括一组不透明辅助特征被布置在其中，使得该组不透明辅助特征与主要特征的不透明区域交替地对准。

9. 发明授权

US07916295B2 Alignment mark and method of getting position reference for wafer 有权
标题翻译：对准标记和获取晶片位置参考的方法
公开(公告)号：US07916295B2
公开(公告)日：2011-03-29
申请号：US12203310
申请日：2008-09-03
申请人： Chiao-Wen Yeh , Chih-Hao Huang
发明人： Chiao-Wen Yeh , Chih-Hao Huang
IPC分类号： G01B11/00 , H01L23/544
CPC分类号： H01L23/544 , G03F9/7076 , G03F9/7084 , H01L2223/54426 , H01L2223/54466 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark on a wafer is described, including at least one dense pattern and at least one block-like pattern adjacent thereto and shown as at least one dark image and at least one bright image adjacent thereto. A method of getting a position reference for a wafer is also described. An above alignment mark is formed. The alignment mark, which is shown as at least one dark image and at least one bright image adjacent thereto that are formed by the at least one dense pattern and the at least one block-like pattern, is then detected.
摘要翻译：描述晶片上的对准标记，其包括至少一个致密图案和与其相邻的至少一个块状图案，并且示出为至少一个暗图像和与其相邻的至少一个亮像。还描述了获得晶片的位置参考的方法。形成上述对准标记。然后检测作为至少一个暗图像和与其相邻的至少一个亮图像的对准标记，其由至少一个密集图案和至少一个块状图案形成。

10. 发明申请

US20120256212A1 TUNABLE PHOSPHOR FOR LUMINESCENT 有权
标题翻译：用于发光的TUNABLE磷光体
公开(公告)号：US20120256212A1
公开(公告)日：2012-10-11
申请号：US13084135
申请日：2011-04-11
申请人： Chiao-Wen Yeh , Ru-Shi Liu
发明人： Chiao-Wen Yeh , Ru-Shi Liu
IPC分类号： H01L33/44 , C01B33/00 , C09K11/80
CPC分类号： H05B33/14 , C09K11/0883 , C09K11/7728 , H01L33/502
摘要： The present disclosure provides an illuminating system including a light emitting diode (LED); and a tunable luminescent material disposed approximate the light-emitting diode, wherein the tunable luminescent material includes alkaline earth metal (AE) and silicon aluminum nitride doped by a rare earth element (RE), formulated as (AE)Si6−pAlpN8, wherein p is a parameter defining a relative aluminum content in weight and p is greater than zero.
摘要翻译：本公开提供了一种包括发光二极管（LED）的照明系统; 以及配置在发光二极管附近的可调发光材料，其中可调谐发光材料包括由稀土元素（RE）掺杂的碱土金属（AE）和氮化硅铝，其被配制为（AE）Si6-pAlpN8，其中p 是定义重量相对铝含量的参数，p大于零。

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