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1. 发明授权

US08381964B2 Tin-silver bonding and method thereof 有权
标题翻译：锡 - 银键合及其方法
公开(公告)号：US08381964B2
公开(公告)日：2013-02-26
申请号：US13447973
申请日：2012-04-16
申请人： Cheng-Yi Liu , Ming-Chung Kuo
发明人： Cheng-Yi Liu , Ming-Chung Kuo
IPC分类号： B23K31/02
CPC分类号： B23K20/24 , B23K2101/40 , Y10T428/12715
摘要： A Sn—Ag bonding and a method thereof are revealed. By means of a bonding layer formed by tin and silver between wafers, the stress released by diffusion and bonding between tin(Sn) and silver(Ag) is larger than the stress released by diffusion and bonding of conventional gold-silver bonding. Moreover, a Sn—Ag bonding method of the present invention forms Sn—Ag bonding at low temperature and releases more stress so as to reduce thermal stress generated during wafer bonding effectively. And after wafer bonding, the high temperature processes can be performed.
摘要翻译：揭示了Sn-Ag键合及其方法。通过在晶片之间由锡和银形成的结合层，通过锡（Sn）和银（Ag）之间的扩散和结合释放的应力大于常规金 - 银键的扩散和结合释放的应力。此外，本发明的Sn-Ag键合方法在低温下形成Sn-Ag键合，并且释放更多的应力，从而有效地降低晶片接合期间产生的热应力。在晶片接合之后，可以进行高温工艺。

2. 发明授权

US08168455B2 Method for manufacturing light emitting diode 有权
标题翻译：制造发光二极管的方法
公开(公告)号：US08168455B2
公开(公告)日：2012-05-01
申请号：US12557023
申请日：2009-09-10
申请人： Cheng-yi Liu , Yung-Hsun Lin
发明人： Cheng-yi Liu , Yung-Hsun Lin
IPC分类号： H01L21/00
CPC分类号： H01L33/08 , H01L33/20 , H01L33/42 , H01L33/44
摘要： A method for manufacturing light emitting diode (LED) is revealed. By means of wet etching, a plurality of pyramids is formed on epitaxial structure. The depth of the pyramids is beyond a n-type semiconductor layer, reaching a p-type semiconductor layer. Thus light emitting directions of the LED made by the method of the present invention are increased. Therefore, the light emitting efficiency of LED is improved.
摘要翻译：揭示了一种制造发光二极管（LED）的方法。通过湿蚀刻，在外延结构上形成多个金字塔。金字塔的深度超过n型半导体层，到达p型半导体层。因此，通过本发明的方法制造的LED的发光方向增加。因此，LED的发光效率提高。

3. 发明申请

US20090146166A1 Structure Applying Optical Limit Guide Layer 审中-公开
标题翻译：结构应用光限制导向层
公开(公告)号：US20090146166A1
公开(公告)日：2009-06-11
申请号：US12060878
申请日：2008-04-02
申请人： Cheng-yi Liu , Yung-Hsun Lin , Ching-Liang Lin , Po-Han Chen , Chia-Lun Chang , Pen-Ko Chou , Yi-Ju Chen , You-Hsian Chang
发明人： Cheng-yi Liu , Yung-Hsun Lin , Ching-Liang Lin , Po-Han Chen , Chia-Lun Chang , Pen-Ko Chou , Yi-Ju Chen , You-Hsian Chang
IPC分类号： H01L33/00 , F21V8/00
CPC分类号： G02B6/122 , G02B6/13 , H01L33/0079 , H01L33/405
摘要： A structure applying an optical wave guide layer includes an incident light source and at least one optical wave guide layer. The structure can be in any geometric shape such as a planar, hemispherical or conical shape. The geometric structure is designed for collecting and guiding the incident light source in specific directions. The light can be guided by a combination of materials having different optical properties. The incident angle of the collected light is controlled and the materials are selected to effectively overcome a drawback of the prior art that a portion of the light of some optical components cannot be extracted by a light extraction method.
摘要翻译：应用光波导层的结构包括入射光源和至少一个光波导层。该结构可以是任何几何形状，例如平面，半球形或圆锥形。几何结构设计用于在特定方向上收集和引导入射光源。光可以由具有不同光学性质的材料的组合引导。控制所收集的光的入射角，并且选择材料以有效地克服现有技术的缺点，即一些光学部件的光的一部分不能通过光提取方法提取。

4. 发明申请

US20080153209A1 THINNED DIE INTEGRATED CIRCUIT PACKAGE 有权
标题翻译：薄膜集成电路封装
公开(公告)号：US20080153209A1
公开(公告)日：2008-06-26
申请号：US12042392
申请日：2008-03-05
申请人： Cheng-Yi Liu , Johanna Swan , Steven Towle , Anna George , Chuan Hu
发明人： Cheng-Yi Liu , Johanna Swan , Steven Towle , Anna George , Chuan Hu
IPC分类号： H01L21/58
CPC分类号： H01L24/97 , H01L21/4871 , H01L23/142 , H01L23/36 , H01L23/367 , H01L23/49816 , H01L23/5389 , H01L24/11 , H01L24/19 , H01L2224/0401 , H01L2224/04026 , H01L2224/04105 , H01L2224/05124 , H01L2224/05147 , H01L2224/13099 , H01L2224/16225 , H01L2224/16227 , H01L2224/20 , H01L2224/211 , H01L2224/32245 , H01L2224/73253 , H01L2224/73267 , H01L2224/82039 , H01L2224/92244 , H01L2224/97 , H01L2924/01004 , H01L2924/01005 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/01051 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12042 , H01L2924/14 , H01L2924/1433 , H01L2924/15174 , H01L2924/15311 , H01L2924/3011 , H01L2224/83 , H01L2224/82 , H01L2924/00 , H01L2924/00014 , H01L2924/013
摘要： A method and apparatus provide an integrated circuit package with improved heat dissipation and easier fabrication. The integrated circuit package includes a thinned semiconductor die attached to a heat spreader using a thermally conductive material. The thinned die reduces the thermal resistance of the die/heat spreader combination to improve heat extraction from the die as well as eliminating processing steps in fabrication. Additionally, the thinned die becomes more compliant as it takes on the thermal/mechanical properties of the heat spreader to reduce stress-induced cracking of the die.
摘要翻译：一种方法和装置提供具有改进的散热和更容易制造的集成电路封装。集成电路封装包括使用导热材料附着到散热器的薄化半导体管芯。减薄的模头降低了模具/散热器组合的热阻，以改善从模具的热提取以及消除制造中的加工步骤。此外，薄型模具变得更加柔顺，因为它承受散热器的热/机械性能，以减少模具的应力引起的开裂。

5. 发明申请

US20080014664A1 MANUFACTURING METHOD OF LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管的制造方法
公开(公告)号：US20080014664A1
公开(公告)日：2008-01-17
申请号：US11862193
申请日：2007-09-27
申请人： Cheng-Yi Liu , Shih-Chieh Hsu
发明人： Cheng-Yi Liu , Shih-Chieh Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method for fabricating a light emitting diode (LED) is provided. A first-type doped semiconductor layer, a light emitting layer and a second-type doped semiconductor layer are formed on an epitaxy substrate sequentially. Then, a gold layer is formed on the second-type doped semiconductor layer. Next, a bonding substrate is provided. The bonding substrate includes a silicon substrate and a germanium-contained layer disposed on the silicon substrate. Then, a bonding process is performed on the bonding substrate and the gold layer. Next, the epitaxy substrate is removed. Accordingly, a LED with better reliability and light-emitting efficiency can be made. Moreover, a LED is also provided.
摘要翻译：提供一种制造发光二极管（LED）的方法。依次在外延基板上形成第一掺杂半导体层，发光层和第二掺杂半导体层。然后，在第二掺杂半导体层上形成金层。接下来，提供接合基板。接合基板包括硅基板和设置在硅基板上的含锗层。然后，对接合基板和金层进行接合处理。接下来，除去外延基板。因此，可以实现具有更好的可靠性和发光效率的LED。此外，还提供了LED。

6. 发明授权

US07295707B2 Method for aligning gesture features of image 有权
标题翻译：用于对准图像的手势特征的方法
公开(公告)号：US07295707B2
公开(公告)日：2007-11-13
申请号：US10628511
申请日：2003-07-29
申请人： Chin-Chen Chang , Cheng-Yi Liu , I-Yen Chen
发明人： Chin-Chen Chang , Cheng-Yi Liu , I-Yen Chen
IPC分类号： G06K9/00 , G06K9/46
CPC分类号： G06K9/00389 , E05F15/00 , E05Y2400/852 , E05Y2400/86 , G06K9/00375 , G06K9/48 , G06K9/6204
摘要： A method for aligning gesture features of image is disclosed. An input gesture image is captured, and then a closed curve formed by a binary contour image of the gesture image is determined by processing the gesture image. A curvature scale space (CSS) image of the gesture image is drawn based on the closed curve. A convolution operation is performed with respect to the sequence of a coordinate-peak set formed by the CSS image and a predefined function to designate the coordinate with maximal value of integration as a basis point for obtaining a feature parameter of the gesture image. Finally, comparing the feature parameter of the gesture image with each feature parameter of a plurality of reference gesture shapes, thereby determining a gesture shape corresponding to the gesture image.
摘要翻译：公开了一种用于对准图像的姿势特征的方法。捕获输入手势图像，然后通过处理手势图像来确定由手势图像的二进制轮廓图像形成的闭合曲线。基于闭合曲线绘制手势图像的曲率缩放空间（CSS）图像。相对于由CSS图像形成的坐标 - 峰值集合的序列和预定义函数来执行卷积运算，以将具有最大积分值的坐标指定为用于获得手势图像的特征参数的基点。最后，将手势图像的特征参数与多个参考手势形状的每个特征参数进行比较，从而确定与手势图像相对应的手势形状。

7. 发明申请

US20060243991A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060243991A1
公开(公告)日：2006-11-02
申请号：US11306418
申请日：2005-12-28
申请人： Cheng-Yi Liu , Shih-Chien Hsu
发明人： Cheng-Yi Liu , Shih-Chien Hsu
IPC分类号： H01L33/00
CPC分类号： H01L33/0079
摘要： A method for fabricating a light emitting diode (LED) is provided. First, a first type doped semiconductor layer, an emitting layer and a second type doped semiconductor layer are sequentially formed on an epitaxy substrate. Then, a gold layer is formed on the second type doped semiconductor layer. Next, a silicon substrate is provided, and a wafer bonding process is performed between the silicon substrate and the gold layer. Finally, the epitaxy substrate is removed. As mentioned above, a LED with better reliability and efficiency of light-emitting is fabricated according to the method provided by the present invention. Moreover, the present invention further provides a LED.
摘要翻译：提供一种制造发光二极管（LED）的方法。首先，在外延衬底上依次形成第一掺杂半导体层，发光层和第二掺杂半导体层。然后，在第二型掺杂半导体层上形成金层。接下来，提供硅衬底，并且在硅衬底和金层之间执行晶片接合工艺。最后，除去外延衬底。如上所述，根据本发明提供的方法制造具有更好的发光可靠性和效率的LED。此外，本发明还提供一种LED。

8. 发明申请

US20060141644A1 LIGHT EMITTING DIODE AND FABRICATING METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060141644A1
公开(公告)日：2006-06-29
申请号：US11163314
申请日：2005-10-14
申请人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
发明人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
IPC分类号： H01L21/00 , H01L21/44
CPC分类号： H01L33/0079 , H01L25/0753 , H01L2224/48091 , H01L2924/00014
摘要： A method for fabricating a light emitting diode (LED) is provided. Successively forming a first type doped semiconductor layer, a light emitting layer and a second type doped semiconductor layer on an epitaxy substrate; forming a bonding layer thereon; bonding a transferring substrate with the bonding layer; removing the epitaxy substrate; removing a part of the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer for exposing a part of the bonding layer; patterning the bonding layer to form a first and a second bonding portion isolated from each other, wherein the first type doped semiconductor layer, the light emitting layer and the second type doped semiconductor layer are disposed on the first bonding portion; forming a pad on the first type doped semiconductor layer; and forming a conducting wire for electrically connecting the pad and the second bonding portion.
摘要翻译：提供一种制造发光二极管（LED）的方法。在外延衬底上连续形成第一掺杂半导体层，发光层和第二掺杂半导体层; 在其上形成结合层; 用转移衬底与接合层接合; 去除外延衬底; 去除所述第一类型掺杂半导体层的一部分，所述发光层和所述第二类型掺杂半导体层，用于暴露所述结合层的一部分; 图案化所述接合层以形成彼此隔离的第一和第二接合部分，其中所述第一掺杂半导体层，所述发光层和所述第二掺杂半导体层设置在所述第一接合部分上; 在所述第一掺杂半导体层上形成焊盘; 以及形成用于电连接所述焊盘和所述第二接合部的导线。

9. 发明申请

US20060102925A1 LIGHT EMITTING DIODE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管结构及其制造方法
公开(公告)号：US20060102925A1
公开(公告)日：2006-05-18
申请号：US11163220
申请日：2005-10-11
申请人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
发明人： Cheng-Yi Liu , Yuan-Tai Lai , Shen-Jie Wang
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L27/153 , H01L33/0079
摘要： A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer includes a first type doped semiconductor layer, a light-emitting layer and a second type doped semiconductor layer. The first type doped semiconductor layer is disposed on the epitaxy substrate, while the light-emitting layer is disposed between the first type and second type doped semiconductor layers. The first bonding pad is disposed in the through hole and electrically connected to the first type doped semiconductor layer, while the second bonding pad is disposed on the second type doped semiconductor layer.
摘要翻译：提供了包括外延基板，半导体层，第一接合焊盘和第二接合焊盘的LED结构。外延衬底具有通孔，并且半导体层设置在外延衬底上。半导体层包括第一掺杂半导体层，发光层和第二掺杂半导体层。第一类型掺杂半导体层设置在外延衬底上，而发光层设置在第一类型和第二类型掺杂半导体层之间。第一接合焊盘设置在通孔中并电连接到第一掺杂半导体层，而第二接合焊盘设置在第二掺杂半导体层上。

10. 发明授权

US08017962B2 Light-emitting diode apparatus and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US08017962B2
公开(公告)日：2011-09-13
申请号：US12193271
申请日：2008-08-18
申请人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
发明人： Shih-Peng Chen , Chia-Hua Chan , Horng-Jou Wang , Ching-Liang Lin , Chii-Chang Chen , Cheng-Yi Liu , Huang-Kun Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/22 , H01L33/405 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes a thermoconductive substrate, a thermoconductive adhesive layer, an epitaxial layer, a current spreading layer and a micro- or nano-roughing structure. The thermoconductive adhesive layer is disposed on the thermoconductive substrate. The epitaxial layer is disposed opposite to the thermoconductive adhesive layer and has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed between the second semiconductor layer of the epitaxial layer and the thermoconductive adhesive layer. The micro- or nano-roughing structure is disposed on the first semiconductor layer of the epitaxial layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译：发光二极管（LED）装置包括导热基板，导热粘合剂层，外延层，电流扩散层和微型或纳米粗糙结构。导热粘合剂层设置在导热基板上。外延层与导电粘合剂层相对设置，并具有第一半导体层，有源层和第二半导体层。电流扩散层设置在外延层的第二半导体层和导热粘合剂层之间。微结构或纳米粗糙结构设置在外延层的第一半导体层上。此外，还公开了一种LED装置的制造方法。

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