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    • 6. 发明申请
    • Microfabrication of Carbon-based Devices Such as Gate-Controlled Graphene Devices
    • 诸如门控石墨烯器件的碳基器件的微加工
    • US20110089404A1
    • 2011-04-21
    • US12936768
    • 2009-04-23
    • Charles M. MarcusJames R. WilliamsHugh Olen Hill Churchill
    • Charles M. MarcusJames R. WilliamsHugh Olen Hill Churchill
    • H01L29/12H01L21/36
    • B82Y30/00B82Y40/00C01B32/174C01B32/194H01L29/1606
    • A graphene device includes a graphene layer and a back gate electrode connected to apply a global electrical bias to the graphene from a first surface of the graphene. At least two graphene device electrodes are each connected to a corresponding and distinct region of the graphene at a second graphene surface. A dielectric layer blanket-coats the second graphene surface and the device electrodes. At least one top gate electrode is disposed on the dielectric layer and extends over a distinct one of the device electrodes and at least a portion of a corresponding graphene region. Each top gate electrode is connected to apply an electrical charge carrier bias to the graphene region over which that top gate electrode extends to produce a selected charge carrier type in that graphene region. Such a carbon structure can be exposed to a beam of electrons to compensate for extrinsic doping of the carbon.
    • 石墨烯装置包括石墨烯层和背栅极电极,其连接以从石墨烯的第一表面向石墨烯施加全局电偏压。 在第二石墨烯表面处,至少两个石墨烯器件电极各自连接到石墨烯的对应且不同的区域。 电介质层覆盖 - 涂覆第二石墨烯表面和器件电极。 至少一个顶栅电极设置在电介质层上并在不同的一个器件电极和对应的石墨烯区域的至少一部分上延伸。 每个顶栅电极被连接以将电荷载流子偏压施加到石墨烯区域,在该石墨烯区域上顶栅电极延伸以在该石墨烯区域中产生选定的电荷载体类型。 这样的碳结构可以暴露于电子束以补偿碳的外在掺杂。