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    • 7. 发明申请
    • ORGANIC LIGHT EMITTING DEVICE
    • 有机发光装置
    • US20100066242A1
    • 2010-03-18
    • US12463754
    • 2009-05-11
    • Sung-Soo LeeChang-Woong ChuSeong-Mn Kim
    • Sung-Soo LeeChang-Woong ChuSeong-Mn Kim
    • H01J1/46
    • H01L51/5265H01L27/3213H01L27/322H01L27/3244H01L51/5036H01L2251/558
    • An organic light emitting device includes a substrate including a first region, a second region, a third region, and a fourth region, a thin film structure formed on the substrate, first, second, and third color filters formed on the thin film structure, and respectively disposed in the first, second, and third regions, an insulating layer formed on the first to third color filters and the thin film structure, first, second, third, and fourth translucent members formed on the insulating layer, and respectively disposed in the first, second, third, and fourth regions, first, second, third, and fourth pixel electrodes respectively formed on the first, second, third, and fourth translucent members, an organic light emitting member for emitting white light formed on the first to fourth pixel electrodes; and a common electrode formed on the organic light emitting member.
    • 一种有机发光器件,包括:包括第一区域,第二区域,第三区域和第四区域的衬底;形成在衬底上的薄膜结构,形成在薄膜结构上的第一,第二和第三滤色器, 并且分别设置在第一,第二和第三区域中,形成在第一至第三滤色器上的绝缘层和形成在绝缘层上的薄膜结构,第一,第二,第三和第四半透明部件,并且分别设置在 分别形成在第一,第二,第三和第四半透明构件上的第一,第二,第三和第四区域,第一,第二,第三和第四像素电极,用于发射白光的有机发光部件, 第四像素电极; 以及形成在有机发光部件上的公共电极。
    • 10. 发明授权
    • Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method
    • 使用聚合物沉积的等离子体蚀刻方法和使用等离子体蚀刻方法形成接触孔的方法
    • US06617253B1
    • 2003-09-09
    • US09620022
    • 2000-07-20
    • Chang-Woong ChuTae-Hyuk AhnSang-Sup JeongJi-Soo Kim
    • Chang-Woong ChuTae-Hyuk AhnSang-Sup JeongJi-Soo Kim
    • H01L21302
    • H01L21/31144H01L21/31116H01L21/76802
    • A plasma etching method using selective polymer deposition, and a method of forming a contact hole using the plasma etching method are provided. The plasma etching method uses a method of reinforcing an etch mask by selectively depositing polymer on only a photoresist pattern, which is an etch mask. That is, a dielectric film is plasma etched for a predetermined period of time using the photoresist pattern as an etch mask, and polymer is selectively deposited on only the photoresist pattern which is thinned by plasma etching, thereby forming a polymer layer. Following this, the dielectric film is plasma etched using the photoresist pattern and the polymer layer as a mask. Thus, dielectric film etching providing high resolution and an excellent profile can be performed using the thinned photoresist pattern as a mask, and a contact hole and a self-aligned contact hole each having a very high aspect ratio, and a self-aligned contact hole having an excellent profile, can be formed.
    • 提供了使用选择性聚合物沉积的等离子体蚀刻方法,以及使用等离子体蚀刻方法形成接触孔的方法。 等离子体蚀刻方法使用通过仅在作为蚀刻掩模的光致抗蚀剂图案上选择性地沉积聚合物来增强蚀刻掩模的方法。 也就是说,使用光致抗蚀剂图案作为蚀刻掩模,将电介质膜等离子体蚀刻预定的时间段,并且仅通过等离子体蚀刻而减薄的光致抗蚀剂图案上选择性地沉积聚合物,从而形成聚合物层。 接下来,使用光致抗蚀剂图案和聚合物层作为掩模来等离子体蚀刻电介质膜。 因此,可以使用减薄的光致抗蚀剂图案作为掩模,以及具有非常高的纵横比的接触孔和自对准接触孔以及自对准的接触孔来实现提供高分辨率和优异的轮廓的电介质膜蚀刻 具有优异的外形,可以形成。