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1. 发明授权

US08592304B2 Method for filling metal 有权
标题翻译：填充金属的方法
公开(公告)号：US08592304B2
公开(公告)日：2013-11-26
申请号：US12757017
申请日：2010-04-08
申请人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
发明人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/76804 , H01L21/02063 , H01L21/32139 , H01L21/76814
摘要： A method for filling a metal is disclosed. First, a substrate is provided. The substrate includes a metal material layer, a dielectric layer covering the metal material layer and a hard mask layer covering the dielectric layer. The hard mask layer has at least one opening to expose the underlying dielectric layer. Second, a dry etching step is performed to etch the dielectric layer through the opening to remove part of the dielectric layer to expose the metal material layer and to form a recess and leave some residues in the recess. Then a cleaning step is performed to remove the residues and to selectively remove part of the hard mask to substantially enlarge the opening. Later, a metal fills the recess through the enlarged opening.
摘要翻译：公开了一种填充金属的方法。首先，提供基板。基板包括金属材料层，覆盖金属材料层的电介质层和覆盖电介质层的硬掩模层。硬掩模层具有至少一个开口以暴露下面的介电层。第二，进行干蚀刻步骤以通过开口蚀刻介电层以去除介电层的一部分以暴露金属材料层并形成凹槽并在凹部中留下一些残留物。然后执行清洁步骤以去除残留物并选择性地去除硬掩模的一部分以基本上扩大开口。之后，金属通过扩大的开口填充凹槽。

2. 发明申请

US20120242622A1 TOUCH MODULE 审中-公开
标题翻译：触控模块
公开(公告)号：US20120242622A1
公开(公告)日：2012-09-27
申请号：US13253932
申请日：2011-10-05
申请人： Yu Tseng , Po-Fu Huang , Chang-Hsiao Lee
发明人： Yu Tseng , Po-Fu Huang , Chang-Hsiao Lee
IPC分类号： G06F3/042
CPC分类号： G06F3/0421 , G06F3/0425 , G06F3/0428
摘要： A touch module includes a panel device, an outer frame, and an optical sensor. The panel device includes an array substrate and a display panel having a touch surface. The array substrate is electrically connected to the display panel. The outer frame is disposed on the panel device. The optical sensor is disposed between the panel device and the outer frame, including a wire, at least one lens, a photosensitive chip, and a reflection mirror. The wire is formed on the array substrate. The lens is disposed between the display panel and the outer frame for guiding light transmitted from the touch surface. The photosensitive chip is electrically connected to one end of the wire. The reflection mirror is disposed above the photosensitive chip for reflecting the light guided by the lens to the photosensitive chip.
摘要翻译：触摸模块包括面板装置，外框架和光学传感器。面板装置包括阵列基板和具有触摸表面的显示面板。阵列基板电连接到显示面板。外框架设置在面板装置上。光学传感器设置在面板装置和外框架之间，包括线，至少一个透镜，感光芯片和反射镜。导线形成在阵列基板上。透镜设置在显示面板和外框之间，用于引导从触摸表面传输的光。感光芯片电连接到导线的一端。反射镜设置在感光芯片上方，用于将由透镜引导的光反射到感光芯片。

3. 发明申请

US20120156885A1 METHOD AND SYSTEM FOR PROCESSING SEMICONDUCTOR WAFER 审中-公开
标题翻译：用于处理半导体波形的方法和系统
公开(公告)号：US20120156885A1
公开(公告)日：2012-06-21
申请号：US12974714
申请日：2010-12-21
申请人： Chang-Hsiao LEE , Yu-Tsung Lai , Jiunn-Hsiung Liao
发明人： Chang-Hsiao LEE , Yu-Tsung Lai , Jiunn-Hsiung Liao
IPC分类号： H01L21/465
CPC分类号： H01L21/02063 , H01L21/67207 , H01L21/76814
摘要： In a method for processing a semiconductor wafer formed with a copper conductor, the semiconductor wafer is etched in an etching chamber to expose the copper conductor. The etched semiconductor wafer is transmitted from the etching chamber to a buffer zone, where a gas inert to the semiconductor wafer is introduced for a period of time. Then the semiconductor wafer is moved out of the buffer zone to a loading module. Nitrogen is one of the suitable options as the gas, and argon is another option.
摘要翻译：在用铜导体形成的半导体晶片的处理方法中，在蚀刻室中蚀刻半导体晶片以露出铜导体。蚀刻的半导体晶片从蚀刻室传输到缓冲区，其中对半导体晶片惰性的气体被引入一段时间。然后将半导体晶片从缓冲区移出到加载模块。氮气是气体的合适选择之一，氩气是另一种选择。

4. 发明申请

US20110139750A1 METHOD OF REMOVING POST-ETCH RESIDUES 有权
标题翻译：去除后残留物的方法
公开(公告)号：US20110139750A1
公开(公告)日：2011-06-16
申请号：US12637762
申请日：2009-12-15
申请人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
发明人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
IPC分类号： C23F1/00
CPC分类号： H01L21/31144 , H01L21/02071 , H01L21/32138
摘要： A method of removing post-etch residues is provided. First, a substrate is provided. An isolation layer covers the substrate and a conductive layer is embedded in the isolation layer. A dielectric layer and a hard mask cover the isolation layer. Then, an etching process is performed, and a patterned hard mask is formed by etching the hard mask by ions or atoms. After that, a charge-removing process is performed by using a conductive solution to cleaning the patterned hard mask and the dielectric layer so as to remove the charges accumulated on the patterned hard mask and the dielectric layer during the etch process. Finally, the post-etch residues on the patterned hard mask and the dielectric layer is removed.
摘要翻译：提供了去除蚀刻后残留物的方法。首先，提供基板。隔离层覆盖基板，并且导电层嵌入在隔离层中。介电层和硬掩模覆盖隔离层。然后，进行蚀刻处理，通过用离子或原子蚀刻硬掩模来形成图案化的硬掩模。之后，通过使用导电溶液来清洁图案化的硬掩模和电介质层，从而去除在刻蚀过程中累积在图案化的硬掩模和电介质层上的电荷，进行电荷去除处理。最后，去除图案化硬掩模和电介质层上的蚀刻后残留物。

5. 发明申请

US20100105205A1 CLEANING SOLUTION AND SEMICONDCUTOR PROCESS USING THE SAME 审中-公开
标题翻译：使用相同的清洁溶液和半导体工艺
公开(公告)号：US20100105205A1
公开(公告)日：2010-04-29
申请号：US12259033
申请日：2008-10-27
申请人： Chang-Hsiao Lee , Shih-Fang Tzou , Ming-Da Hsieh , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
发明人： Chang-Hsiao Lee , Shih-Fang Tzou , Ming-Da Hsieh , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
IPC分类号： H01L21/44 , C11D3/28
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/3281 , H01L21/02063 , H01L21/76811 , H01L21/76813 , H01L21/76814
摘要： A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water.
摘要翻译：提供半导体工艺。首先，在基板上依次形成金属层，电介质层和图案化的硬掩模层。此后，去除介电层的一部分以形成露出金属层的开口。之后，使用清洁溶液清洁开口。清洗液含有含量为0.00275〜3重量％的三唑化合物，含量为1〜10重量％的硫酸，含量为1〜200ppm的氢氟酸和水。

6. 发明授权

US08735295B2 Method of manufacturing dual damascene structure 有权
标题翻译：双镶嵌结构的制造方法
公开(公告)号：US08735295B2
公开(公告)日：2014-05-27
申请号：US13526554
申请日：2012-06-19
申请人： Chang-Hsiao Lee , Hsin-Yu Chen , Yu-Tsung Lai , Jiunn-Hsiung Liao , Shih-Chun Tsai
发明人： Chang-Hsiao Lee , Hsin-Yu Chen , Yu-Tsung Lai , Jiunn-Hsiung Liao , Shih-Chun Tsai
IPC分类号： H01L21/311
CPC分类号： H01L21/302 , H01L21/76811 , H01L21/76813
摘要： A method for fabricating a dual damascene structure includes the following steps. At first, a dielectric layer, a dielectric mask layer and a metal mask layer are sequentially formed on a substrate. A plurality of trench openings is formed in the metal mask layer, and a part of the metal mask layer is exposed in the bottom of each of the trench openings. Subsequently, a plurality of via openings are formed in the dielectric mask layer, and a part of the dielectric mask layer is exposed in a bottom of each of the via openings. Furthermore, the trench openings and the via openings are transferred to the dielectric layer to form a plurality of dual damascene openings.
摘要翻译：一种用于制造双镶嵌结构的方法包括以下步骤。首先，在基板上依次形成电介质层，电介质掩模层和金属掩模层。在金属掩模层中形成多个沟槽开口，并且金属掩模层的一部分露出在每个沟槽开口的底部。随后，在介电掩模层中形成多个通路孔，并且电介质掩模层的一部分暴露在每个通路孔的底部。此外，沟槽开口和通孔开口被转移到电介质层以形成多个双镶嵌开口。

7. 发明申请

US20130337650A1 METHOD OF MANUFACTURING DUAL DAMASCENE STRUCTURE 有权
标题翻译：制造双重大气结构的方法
公开(公告)号：US20130337650A1
公开(公告)日：2013-12-19
申请号：US13526554
申请日：2012-06-19
申请人： Chang-Hsiao Lee , Hsin-Yu Chen , Yu-Tsung Lai , Jiunn-Hsiung Liao , Shih-Chun Tsai
发明人： Chang-Hsiao Lee , Hsin-Yu Chen , Yu-Tsung Lai , Jiunn-Hsiung Liao , Shih-Chun Tsai
IPC分类号： H01L21/302
CPC分类号： H01L21/302 , H01L21/76811 , H01L21/76813
摘要： A method for fabricating a dual damascene structure includes the following steps. At first, a dielectric layer, a dielectric mask layer and a metal mask layer are sequentially formed on a substrate. A plurality of trench openings is formed in the metal mask layer, and a part of the metal mask layer is exposed in the bottom of each of the trench openings. Subsequently, a plurality of via openings are formed in the dielectric mask layer, and a part of the dielectric mask layer is exposed in a bottom of each of the via openings. Furthermore, the trench openings and the via openings are transferred to the dielectric layer to form a plurality of dual damascene openings.
摘要翻译：一种用于制造双镶嵌结构的方法包括以下步骤。首先，在基板上依次形成电介质层，电介质掩模层和金属掩模层。在金属掩模层中形成多个沟槽开口，并且金属掩模层的一部分露出在每个沟槽开口的底部。随后，在介电掩模层中形成多个通路孔，并且电介质掩模层的一部分暴露在每个通路孔的底部。此外，沟槽开口和通孔开口被转移到电介质层以形成多个双镶嵌开口。

8. 发明授权

US08277674B2 Method of removing post-etch residues 有权
标题翻译：去除蚀刻后残留物的方法
公开(公告)号：US08277674B2
公开(公告)日：2012-10-02
申请号：US12637762
申请日：2009-12-15
申请人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
发明人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
IPC分类号： C23F1/00
CPC分类号： H01L21/31144 , H01L21/02071 , H01L21/32138
摘要： A method of removing post-etch residues is provided. First, a substrate is provided. An isolation layer covers the substrate and a conductive layer is embedded in the isolation layer. A dielectric layer and a hard mask cover the isolation layer. Then, an etching process is performed, and a patterned hard mask is formed by etching the hard mask by ions or atoms. After that, a charge-removing process is performed by using a conductive solution to cleaning the patterned hard mask and the dielectric layer so as to remove the charges accumulated on the patterned hard mask and the dielectric layer during the etch process. Finally, the post-etch residues on the patterned hard mask and the dielectric layer is removed.
摘要翻译：提供了去除蚀刻后残留物的方法。首先，提供基板。隔离层覆盖基板，并且导电层嵌入在隔离层中。介电层和硬掩模覆盖隔离层。然后，进行蚀刻处理，通过用离子或原子蚀刻硬掩模来形成图案化的硬掩模。之后，通过使用导电溶液来清洁图案化的硬掩模和电介质层，从而去除在刻蚀过程中累积在图案化的硬掩模和电介质层上的电荷，进行电荷去除处理。最后，去除图案化硬掩模和电介质层上的蚀刻后残留物。

9. 发明授权

US08137472B2 Semiconductor process 有权
标题翻译：半导体工艺
公开(公告)号：US08137472B2
公开(公告)日：2012-03-20
申请号：US13161659
申请日：2011-06-16
申请人： Chang-Hsiao Lee , Shih-Fang Tzou , Ming-Da Hsieh , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
发明人： Chang-Hsiao Lee , Shih-Fang Tzou , Ming-Da Hsieh , Yu-Tsung Lai , Jyh-Cherng Yau , Jiunn-Hsiung Liao
IPC分类号： H01L21/302
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/3281 , H01L21/02063 , H01L21/76811 , H01L21/76813 , H01L21/76814
摘要： A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water. The semiconductor process can reduce the possibility of having an incomplete turning on, a leakage or a short, so that the yield of the product is increased.
摘要翻译：提供半导体工艺。首先，在基板上依次形成金属层，电介质层和图案化的硬掩模层。此后，去除介电层的一部分以形成露出金属层的开口。之后，使用清洁溶液清洁开口。清洗液含有含量为0.00275〜3重量％的三唑化合物，含量为1〜10重量％的硫酸，含量为1〜200ppm的氢氟酸和水。半导体工艺可以降低不完全打开，泄漏或短路的可能性，从而提高产品的产量。

10. 发明申请

US20110250751A1 METHOD FOR FILLING METAL 有权
标题翻译：填充金属的方法
公开(公告)号：US20110250751A1
公开(公告)日：2011-10-13
申请号：US12757017
申请日：2010-04-08
申请人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
发明人： Chang-Hsiao Lee , Yu-Tsung Lai , Jiunn-Hsiung Liao
IPC分类号： H01L21/768
CPC分类号： H01L21/76804 , H01L21/02063 , H01L21/32139 , H01L21/76814
摘要： A method for filling a metal is disclosed. First, a substrate is provided. The substrate includes a metal material layer, a dielectric layer covering the metal material layer and a hard mask layer covering the dielectric layer. The hard mask layer has at least one opening to expose the underlying dielectric layer. Second, a dry etching step is performed to etch the dielectric layer through the opening to remove part of the dielectric layer to expose the metal material layer and to form a recess and leave some residues in the recess. Then a cleaning step is performed to remove the residues and to selectively remove part of the hard mask to substantially enlarge the opening. Later, a metal fills the recess through the enlarged opening.
摘要翻译：公开了一种填充金属的方法。首先，提供基板。基板包括金属材料层，覆盖金属材料层的电介质层和覆盖电介质层的硬掩模层。硬掩模层具有至少一个开口以暴露下面的介电层。第二，进行干蚀刻步骤以通过开口蚀刻介电层以去除介电层的一部分以暴露金属材料层并形成凹槽并在凹部中留下一些残留物。然后执行清洁步骤以去除残留物并选择性地去除硬掩模的一部分以基本上扩大开口。之后，金属通过扩大的开口填充凹槽。

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