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    • 8. 发明授权
    • Semiconductor device having a plurality of stacked transistors and method of fabricating the same
    • 具有多个堆叠晶体管的半导体器件及其制造方法
    • US07927932B2
    • 2011-04-19
    • US12923471
    • 2010-09-23
    • Han-Byung ParkSoon-Moon JungHoon LimCha-Dong YeoByoung-Keun SonJae-Joo ShimChang-Min Hong
    • Han-Byung ParkSoon-Moon JungHoon LimCha-Dong YeoByoung-Keun SonJae-Joo ShimChang-Min Hong
    • H01L21/84
    • H01L21/8221H01L27/0688H01L27/1108H01L27/1207
    • A semiconductor device according to example embodiments may have a plurality of stacked transistors. The semiconductor device may have a lower insulating layer formed on a semiconductor substrate and an upper channel body pattern formed on the lower insulating layer. A source region and a drain region may be formed within the upper channel body pattern, and a non-metal transfer gate electrode may be disposed on the upper channel body pattern between the source and drain regions. The non-metal transfer gate electrode, the upper channel body pattern, and the lower insulating layer may be covered by an intermediate insulating layer. A metal word line may be disposed within the intermediate insulating layer to contact at least an upper surface of the non-metal transfer gate electrode. An insulating spacer may be disposed on a sidewall of the metal word line. A metal node plug may be disposed within the intermediate insulating layer and the lower insulating layer to contact the source region of the upper channel body pattern. Example embodiments also relate to a method of fabricating the above semiconductor device.
    • 根据示例性实施例的半导体器件可以具有多个堆叠的晶体管。 半导体器件可以具有形成在半导体衬底上的下绝缘层和形成在下绝缘层上的上沟道体图案。 源极区域和漏极区域可以形成在上部通道主体图案内,并且非金属转移栅极电极可以设置在源极和漏极区域之间的上部通道主体图案上。 非金属转移栅电极,上通道体图案和下绝缘层可以被中间绝缘层覆盖。 金属字线可以设置在中间绝缘层内以接触非金属转移栅电极的至少上表面。 绝缘间隔物可以设置在金属字线的侧壁上。 金属节点插头可以设置在中间绝缘层和下绝缘层内以接触上通道主体图案的源区域。 示例性实施例还涉及制造上述半导体器件的方法。