会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明申请
    • Drum type washing machine and drying method thereof
    • 滚筒式洗衣机及其干燥方法
    • US20070220683A1
    • 2007-09-27
    • US11723475
    • 2007-03-20
    • Chang Hoo Kim
    • Chang Hoo Kim
    • D06F33/00D06F29/00D06F35/00D06F39/00
    • D06F25/00D06F58/28Y02B40/72
    • A nonvolatile semiconductor memory device which is superior in writing and charge holding properties, including a semiconductor substrate in which a channel formation region is formed between a pair of impurity regions formed with an interval, and a first insulating layer, a floating gate, a second insulating layer, and a control gate over an upper layer portion of the semiconductor substrate. It is preferable that a band gap of a semiconductor material forming the floating gate be smaller than that of the semiconductor substrate. For example, it is preferable that the band gap of the semiconductor material forming the floating gate be smaller than that of the channel formation region in the semiconductor substrate by 0.1 eV or more. This is because, by decreasing the bottom energy level of a conduction band of the floating gate electrode to be lower than that of the channel formation region in the semiconductor substrate, carrier injecting and charge holding properties are improved.
    • 一种写入和电荷保持性能优异的非易失性半导体存储器件,包括其中在形成有间隔的一对杂质区之间形成沟道形成区域的半导体衬底和第一绝缘层,浮动栅极,第二 绝缘层和位于半导体衬底的上层部分上的控制栅极。 形成浮栅的半导体材料的带隙优选比半导体基板的带隙小。 例如,形成浮置栅极的半导体材料的带隙优选比半导体衬底中的沟道形成区域的带隙小0.1eV以上。 这是因为,通过将浮置栅电极的导带的底部能量水平降低到半导体衬底中的沟道形成区域的底部能级,能够提高载流子注入和电荷保持特性。